Abstract: A non-volatile memory device with multiple latency tiers includes at least two crossbar memory arrays, each crossbar memory array comprising a number of memory cells, each memory cell connected to a word line and a bit line at a cross point. The crossbar memory arrays each have a different latency. The crossbar memory arrays are formed on a single die.

Abstract: A method to access two memory cells include determining a first cell current flowing through a first memory cell by subtracting a sneak current associated with the first memory cell from a first access current of the first bitline and determining a second cell current flowing through a second memory cell in the first bitline or a second bitline by subtracting the sneak current associated with the first memory cell from a second access current of the first bitline or the second bitline.

Abstract: This disclosure generally relates to therapeutic antibodies for treating Bacillus anthracis (B. anthracis) infection, to specific variants thereof, pharmaceutical composition comprising them and to methods for their use.

Abstract: A device includes a cross-point array and an access circuit to access subsets of memory elements respectively corresponding to encoded blocks of data. For each of the subsets of memory elements, a row or a column of the cross-point array that includes a first memory element in the subset and a second memory element in the subset further includes a third memory element that is between the first and second memory elements along the row or column and is in one of the subsets corresponding to another of the encoded blocks.

Abstract: According to an example, in a method for determining a resistance state of a cell in a crossbar memory array, a first read voltage may be applied across a cell to sense a first cell current. In addition, a second read voltage may be applied across the cell to sense a second cell current. A difference value between the first cell current and the second cell current may be identified and a resistance state of the cell may be determined based on the difference value.

Abstract: This disclosure provides a circuit that includes a ramp generator to apply a voltage ramp to a resistive memory cell. A sensing circuit can enable the ramp generator and monitor a current output received from the resistive memory cell in response to the applied voltage ramp, wherein the sensing circuit compares the current output to a predetermined current threshold to determine the state of the resistive memory cell.

Abstract: According to an example, a method for assigning redundancy in encoding data onto crossbar memory arrays is provided wherein each of said crossbar memory arrays include cells. The data may be allocated to a subset of the cells in multiple crossbar memory arrays. The redundancy for the data may then be assigned based on coordinates of the subset of cells within the multiple crossbar memory arrays onto which the data is allocated.

Abstract: In an example, in a method for encoding data within a crossbar memory array containing cells, bits of input data may be received. The received bits of data may be mapped to the cells in a row of the memory array, in which the cells are to be assigned to one of a low resistance state and a high resistance state. A subset of the mapped bits in the row may be grouped into a word pattern. The word pattern may be arranged such that more low resistance states are mapped to cells that are located closer to a voltage source of the row of the memory array than to cells that are located farther away from the voltage source.

Abstract: The invention provides a pharmaceutical composition comprising as an active ingredient a combination of three isolated monoclonal antibodies or any antigen-binding fragment thereof which bind ricin toxin and neutralize its toxic effects, and a pharmaceutically acceptable carrier, excipient or diluent. The invention also provides a method of prophylaxis, treatment or amelioration of ricin toxin poisoning including administering to a subject in need thereof a therapeutically effective amount of the pharmaceutical composition.

Abstract: A memristor memory is disclosed. In an example, the memristor memory comprises a memristor component having a plurality of memristor cells. Each memristor cell is configured to change state based on application of an electric potential. The memristor memory also comprises a controller to read the state of the plurality of memristor cells and identify a subset of the plurality of memristor cells to rewrite. The controller writes the subset of the plurality of memristor cells, and the controller reads an updated state of the plurality of memristor cells to validate the subset was written correctly.

Abstract: Methods and systems for storing data in memory arrays are described. In one implementation, input bits are encoded into an intermediate binary array having multiple sub-arrays iteratively appended row-wise to the intermediate binary array. First sub-array is generated based on the input bits such that each row of the first sub-array has a number of 1's equal to a fraction of number of columns in the first sub-array, and based on a column balance coding such that the columns of the first sub-array have an equal number of 1's. At least one subsequent sub-array is generated based on a set of bits obtained from balancing termination indices for a previous sub-array and from diagonal bits of the intermediate binary array that are a part of the previous appended sub-array. The intermediate binary array is transformed to an encoded bit pattern. The encoded bit pattern is stored in the memory array.

Abstract: Encoding or decoding can operate a processing system to apply one or more recursive relations to a known parameter associated with a length m and a Hamming weight l to produce a computed parameter associated with length m?1. An encoding process can thus assign values to bits of a code based on comparison of the data value being encoded and the computed parameter. A decoding process can use the computed parameters in a calculation of a decoded data value.

Abstract: Bit-flip coding uses a bit-flip encoder to flip bits in a redundancy-intersecting vector of a binary array having n rows and n columns until Hamming weights of the binary array are within a predetermined range ? of n divided by two. Information bits of an input data word to the bit-flip coding apparatus are stored in locations within the binary array that are not occupied by n redundancy bits of a redundancy vector.

Abstract: A device includes a cross-point array and an access circuit to access subsets of memory elements respectively corresponding to encoded blocks of data. For each of the subsets of memory elements, a row or a column of the cross-point array that includes a first memory element in the subset and a second memory element in the subset further includes a third memory element that is between the first and second memory elements along the row or column and is in one of the subsets corresponding to another of the encoded blocks.

Abstract: A non-volatile memory device with multiple latency tiers includes at least two crossbar memory arrays, each crossbar memory array comprising a number of memory cells, each memory cell connected to a word line and a bit line at a cross point. The crossbar memory arrays each have a different latency. The crossbar memory arrays are formed on a single die.

Abstract: Methods and systems for storing data in memory arrays are described. In one implementation, a data storage system includes a memory array having memory devices in a crossbar configuration, and a memory controller for controlling data storage in the memory array. The memory controller includes an encoder to generate a 2-dimensional encoded bit pattern that encodes the input data. Each run-length of 0's and each run-length of 1's in each row or each column of the encoded bit pattern are at least of a predefined lower limit. The predefined lower limit is at least two. The memory controller includes a write controller to write the encoded bit pattern into the memory devices of the memory array, such that a number of consecutive memory devices in each row or each column of the memory array having a same state is based on the encoded bit pattern.

Abstract: A distinguished node is dynamically selected from a subset of nodes in a wireless network. Data samples from the subset of nodes are received in view of the distinguished node status. At least one estimate is generated from the data samples and the data samples are compressed conditioned on the estimate.

Abstract: One example disclosed in the application is an electronic data-storage device comprising one or more arrays of memory elements. The data-storage device also includes an error-control-coding encoder that encodes received data and a READ/WRITE controller that writes encoded data received from the error-control-coding encoder to a number of memory elements by applying the switching-inducing force or gradient to the one or more arrays of memory elements until more than a maximum-allowed number of WRITE requests have been queued to the WRITE-request buffer, until feedback signals indicate that the WRITE operation has completed, or until the switching-inducing force or gradient has been applied for a maximum application time.

Abstract: An isolated monoclonal antibody or any antigen-binding fragment thereof which binds to ricin toxin, an expression vector including the isolated nucleic acid molecule and a host cell transfected with said isolated nucleic acid molecule or with the expression vector, a pharmaceutical composition including as an active ingredient the isolated monoclonal antibody or any antigen-binding fragment thereof, the bispecific molecule or the immunoconjugate and a pharmaceutically acceptable carrier, excipient or diluent, and a method of prophylaxis, treatment or amelioration of ricin toxin poisoning including administering to a subject in need thereof a therapeutically effective amount of the isolated monoclonal antibody or any antigen-binding fragment thereof, the bispecific molecule, the immunoconjugate or the pharmaceutical composition.

Abstract: A method for operating a memory unit is disclosed. The method includes encoding data from a cache line divided in a plurality of groups and generating a plurality of codewords. The method further includes storing the LED data for the cache line combined with the data of the cache line retrieved from a first portion of the codewords across a plurality of chips in the memory unit to create a first tier of protection. The method also includes storing the GEC data for the cache line retrieved from a second portion of the codewords across the plurality of chips to create a second tier of protection for the cache line. The method also includes receiving information corresponding to the first tier of protection, determining whether an error exists in the data of the cache line, decoding the data of the cache line, and outputting the data of the cache line at the controller.