Patents by Inventor Osamu Inoue

Osamu Inoue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5709811
    Abstract: A magnetic material for microwave, comprising a phase having garnet structure, said phase comprising a component represented by Formula I(A.sub.3-a Bi.sub.a)B.sub.x O.sub.y Formula Iwhere A represents a component comprising at least one element selected from yttrium (Y) and rare earth elements, B represents a component comprising Fe, a represents a number in the range of 0 to less than 2.00, x represents a number in the range of 4.76 to less than 5.00, and y represents a number satisfying an inequality 1.5(3+x).ltoreq.y.ltoreq.12.
    Type: Grant
    Filed: April 8, 1996
    Date of Patent: January 20, 1998
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Toshifumi Satoh, Hirotaka Furukawa, Osamu Inoue, Takayuki Takeuchi, Kenji Iijima, Koichi Kugimiya
  • Patent number: 5627589
    Abstract: An imaging apparatus comprising imaging devices for converting the light of a subject into electric signals, an image forming device for forming an image of the light of the subject on the imaging devices and a connecting device for connecting the image forming device to the imaging devices. In the imaging apparatus, the connecting device has at least three pins so inserted in holes bored in either the imaging devices or the image forming device as to be vertically movable and a biasing device for making the pins contact with a confronting surface of the image device or the image forming device. Heads of the pins are formed in configuration adaptive to point-contact with the confronting surface. The hole is bonded to the pin, and the pin is bonded to the confronting surface, respectively.
    Type: Grant
    Filed: February 20, 1996
    Date of Patent: May 6, 1997
    Assignee: Nikon Corporation
    Inventors: Satoshi Ejima, Osamu Inoue
  • Patent number: 5589221
    Abstract: A magnetic thin film having excellent soft magnetic properties formed by alternately laminating a main magnetic layer and an intermediate layer, in which the main magnetic layer includes magnetic crystal grains substantially having a columnar structure which have an average height dl and an average diameter ds forming a shape ratio of 0.3.ltoreq.ds/dl.ltoreq.0.9, and the intermediate layer has saturation magnetic flux density of at least 0.1 tesla less than the main magnetic layer. The main magnetic layer and the intermediate layer having saturation magnetic flux density of at least 0.1 tesla less than the main magnetic layer are alternately laminated. It is preferable that the main magnetic layer has a thickness of 3 to 100 nm, and the intermediate layer has a thickness of 0.1 to 10 nm. In addition, it is preferable that a thickness of the entire laminated structure is in the range of about 100 nm to 10 nm.
    Type: Grant
    Filed: May 11, 1995
    Date of Patent: December 31, 1996
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Masayoshi Hiramoto, Osamu Inoue, Koichi Kugimiya, Kenji Iijima
  • Patent number: 5562986
    Abstract: Cotton-like polytetrafluoroethylene materials are obtained by opening a uniaxially stretched article of molded polytetrafluoroethylene by a mechanical force. Those cotton-like materials comprise the 5 to 150 mm long fibers having branches and crimps and non-uniform section. The cotton-like materials are excellent in intermingling property and can be easily made into non-woven fabrics.
    Type: Grant
    Filed: January 5, 1995
    Date of Patent: October 8, 1996
    Assignee: Daikin Industries, Ltd.
    Inventors: Katsutoshi Yamamoto, Osamu Tanaka, Osamu Inoue, Toshio Kusumi, Shinichi Chaen, Jun Asano, Nobuki Uraoka
  • Patent number: 5555522
    Abstract: A semiconductor memory comprising a flip-flop circuit, a redundant memory cell row and column, a specific address detecting gate, a transistor, a sense amplifier and a data output buffer. The receipt of a supply potential causes the flip-flop circuit to generate previously stored output status representing the use or the nonuse of the redundant memory cell row and column. Upon detection of a specific address by the specific address detecting gate, the transistor effects a switching operation causing the output status generated by the flip-flop circuit to be output to the outside via the transistor, sense amplifier and data output buffer. This allows the use or the nonuse of the redundant bits to be verified efficiently.
    Type: Grant
    Filed: May 3, 1995
    Date of Patent: September 10, 1996
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kenji Anami, Shigeki Ohbayashi, Osamu Inoue
  • Patent number: 5518642
    Abstract: An oxide magnetic material provided by the present invention contains, as main components, 55 to 59 mol % of Fe.sub.2 O.sub.3 ; 35 to 42 mol % of MnO; and 6 mol % or less of ZnO, and further contains, as sub-components, 0.05 to 0.3 wt % of CaO; and 0.005 to 0.05 wt % of SiO.sub.2. The other oxide magnetic material provided by the present invention contains, as main components, 61 to 67 mol % of Fe.sub.2 O.sub.3 ; 3 to 36 mol % of MnO; and 30 mol % or less of ZnO, and further contains, as sub-components, 0.05 to 0.5 wt % of CaO; and 0.005 to 0.2 wt % of SiO.sub.2. Such materials can further contain one or more kinds of oxides selected from the group consisting of ZrO.sub.2, HfO.sub.2, Ta.sub.2 O.sub.5, Cr.sub.2 O.sub.3, MoO.sub.3, WO.sub.3, Al.sub.2 O.sub.3, Ga.sub.2 O.sub.3, In.sub.2 O.sub.3, GeO.sub.2, SnO.sub.2, Sb.sub.2 O.sub.3 and Bi.sub.2 O.sub.3.
    Type: Grant
    Filed: September 28, 1994
    Date of Patent: May 21, 1996
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Osamu Inoue, Nobuya Matsutani, Koichi Kugimiya, Osamu Ishii, Yasuyuki Aono
  • Patent number: 5443913
    Abstract: In a magnetic recording medium comprising on a non-magnetic substrate a magnetic layer obtained by dispersing ferromagnetic powder in an electron beam-curable resin followed by electron beam curing or a backcoat layer obtained by curing an electron beam-curable resin with electron beams, a combination of an electron beam-curable vinyl chloride resin having a sulfur-containing polar group and an electron beam-curable urethane resin having a phosphorus-containing polar group is used as the electron beam-curable resin. This results in improvements in dispersibility, surface smoothness, and electromagnetic characteristics, as well as a lowering of error rate in high density digital recording. Storage property is good.
    Type: Grant
    Filed: October 15, 1993
    Date of Patent: August 22, 1995
    Assignee: TDK Corporation
    Inventors: Masahide Kohno, Kazuhiro Kuroda, Yasushi Ishikawa, Hideki Sasaki, Yasufumi Takasugi, Tsunehiko Ikarashi, Osamu Inoue
  • Patent number: 5409515
    Abstract: A filter apparatus that is compact and that provides a large filtration area includes filter elements each constructed in cylindrical form by spirally winding a filter medium. Such medium includes a porous membrane of a polytetrafluoroethylene having a pore diameter of 0.1 to 5 .mu.m and low pressure loss and one or a pair of sheets composed of fibers made of a thermally melting synthetic resin. One end of the cylindrical filter element is connected to a respective through hole in a rigid support plate, and the opposite end is blocked.
    Type: Grant
    Filed: September 14, 1993
    Date of Patent: April 25, 1995
    Assignee: Daikin Industries, Ltd.
    Inventors: Katsutoshi Yamamoto, Osamu Tanaka, Osamu Inoue, Toshio Kusumi, Shinichi Chaen, Jun Asano, Nobuki Uraoka
  • Patent number: 5352522
    Abstract: A composite material is provided which includes a discrete phase including grains made of a first substance; and a continuous phase including a thin coating film made of a second substance and formed on the surface of each of the grains. The thin coating film has a mean thickness smaller than the mean particle size of the grains. The grains are separated substantially from each other by the thin coating film. The porosity of the composite material is 5% or less.
    Type: Grant
    Filed: September 16, 1992
    Date of Patent: October 4, 1994
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Koichi Kugimiya, Yasuhiro Sugaya, Osamu Inoue, Mitsuo Satomi, Ken Hirota
  • Patent number: 5350628
    Abstract: A magnetic material is provided which includes a discrete phase including grains made of a first substance which comprises a magnetic metal; and a continuous phase including a thin coating film made of a second substance which comprises a dielectric or insulating substance. The thin coating film is formed on the surface of the grains and has a mean thickness smaller than the mean particle size of the grains. The grains are separated substantially from each other by the thin coating film.
    Type: Grant
    Filed: November 19, 1992
    Date of Patent: September 27, 1994
    Assignee: Matsushita Electric Industrial Company, Inc.
    Inventors: Koichi Kugimiya, Yasuhiro Sugaya, Osamu Inoue, Ken Hirota, Mitsuo Satomi
  • Patent number: 5238507
    Abstract: A magnetic material is provided which includes a discrete phase including grains made of a first substance which comprises a magnetic metal; and a continuous phase including a thin coating film made of a second substance which comprises a dielectric or insulating substance. The thin coating film is formed on the surface of the grains and has a mean thickness smaller than the mean particle size of the grains. The grains are separated substantially from each other by the thin coating film.
    Type: Grant
    Filed: June 8, 1990
    Date of Patent: August 24, 1993
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Koichi Kugimiya, Yasuhiro Sugaya, Osamu Inoue, Ken Hirota, Mitsuo Satomi
  • Patent number: 5234739
    Abstract: A polytetrafluoroethylene porous film, which is prepared by stretching a semisintered polytetrafluoroethylene material and heating the stretched material at a temperature higher than the melting point of sintered polytetrafluoroethylene, has an area ratio of fibrils to nodes of from 99:1 to 75:25, an average fibril diameter of from 0.05 to 0.2 .mu.m, a largest node area of not larger than 2 .mu.m.sup.2 and an average pore size of from 0.2 to 0.5 .mu.m and achieves low pressure loss.
    Type: Grant
    Filed: July 22, 1992
    Date of Patent: August 10, 1993
    Assignee: Daikin Industries Ltd.
    Inventors: Shinji Tanaru, Osamu Tanaka, Hirofumi Nishibayashi, Osamu Inoue, Katsutoshi Yamamoto, Toshio Kusumi
  • Patent number: 5225131
    Abstract: A process for producing a multilayer polytetrafluoroethylene porous membrane is disclosed, which process comprises at least two layers having different average pore diameters, the process comprising the steps of: filling the inside of a cylinder of an extruding mold distinctively with at least two kinds of polytetrafluoroethylene fine powders with each of which a liquid lubricant has been mixed; paste-extruding the powders to obtain a multilayer extrudate, which is then optionally rolled; removing the liquid lubricant from the multilayer extrudate or the rolled multilayer extrudate to obtain an unsintered multilayer structure; subsequently heating the unsintered multilayer structure at a temperature not lower than the melting point of sintered polytetrafluoroethylene to obtain a semisintered multilayer structure; and then stretching the semisintered multilayer structure at least monoaxially.
    Type: Grant
    Filed: June 5, 1992
    Date of Patent: July 6, 1993
    Assignee: Daikin Industries, Ltd.
    Inventors: Shinji Tamaru, Katsutoshi Yamamoto, Osamu Tanaka, Hirofumi Nishibayashi, Osamu Inoue
  • Patent number: 5217666
    Abstract: A porous PTFE film having a thin thickness and good permeability is produced by coating an emulsion of polytetrafluoroethylene on a substrate surface, in particular, a porous polytetrafluoroethylene substrate which has not been heated at a melting point of unsintered polytetrafluoroethylene or higher, heating the coated substrate at a temperature not lower than a melting point of sintered polytetrafluoroethylene to semi-sinter polytetrafluoroethylene, optionally removing the semi-sintered polytetrafluoroethylene film from the substrate, and then stretching the semi-sintered film at least in one direction.
    Type: Grant
    Filed: May 28, 1992
    Date of Patent: June 8, 1993
    Assignee: Daikin Industries Ltd.
    Inventors: Shinji Tamaru, Hirofumi Nishibayashi, Katsutoshi Yamamoto, Osamu Tanaka, Osamu Inoue
  • Patent number: 5183631
    Abstract: A composite material is provided which includes a discrete phase including grains made of a first substance; and a continuous phase including a thin coating film made of a second substance and formed on the surface of each of the grains. The thin coating film has a mean thickness smaller than the mean particle size of the grains. The grains are separated substantially from each other by the thin coating film. The porosity of the composite material is 5% or less.
    Type: Grant
    Filed: June 8, 1990
    Date of Patent: February 2, 1993
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Koichi Kugimiya, Yasuhiro Sugaya, Osamu Inoue, Mitsuo Satomi, Ken Hirota
  • Patent number: 5079215
    Abstract: An oxide superconductive material comprising constituent elements mainly composed of ABiCuO in which A comprises at least one element of alkaline earth metals, and having a C-plane orientation, and a method of orienting such superconductive materials by hot extrusion from a rectangular nozzle.
    Type: Grant
    Filed: August 14, 1990
    Date of Patent: January 7, 1992
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kouichi Kugimiya, Seiji Adachi, Osamu Inoue, Syunichiro Kawashima
  • Patent number: 5064593
    Abstract: A process for producing a multilayer polytetrafluoroethylene porous membrane comprising at least two layers having different average pore diameters is disclosed, the process comprising the steps of: filling the inside of a cylinder of an extruding mold distinctively with at least two kinds of polytetrafluoroethylene fine powders with each of which a liquid lubricant has been mixed; subsequently paste-extruding the powders to obtain a multilayer extrudate, which is then optionally rolled; and then stretching the extrudate or the rolled extrudate at least monoaxially after the liquid lubricant is removed therefrom or without removing the liquid lubricant.
    Type: Grant
    Filed: December 6, 1990
    Date of Patent: November 12, 1991
    Assignee: Daikin Industries Ltd.
    Inventors: Shinji Tamaru, Katsutoshi Yamamoto, Osamu Tanaka, Hirofumi Nishibayashi, Osamu Inoue
  • Patent number: 5034285
    Abstract: A magnetic head has substrate(s) having a thermal expansion coefficient nearly equal to that of a soft magnetic film formed thereon, and the substrate has a composition consisting of .alpha.-Fe.sub.2 O.sub.3, or a ceramic composition containing 57-96 mol % of MgO, 2-41 mol % of NiO and 2-41 mol % of TiO.sub.2, and the soft magnetic film is an amorphous alloy film.
    Type: Grant
    Filed: August 22, 1988
    Date of Patent: July 23, 1991
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Mitsuo Satomi, Ken Hirota, Osamu Inoue
  • Patent number: 4918035
    Abstract: The present invention provides a process for producing powder of complex perovskite type compounds by using metal alkoxides. In the prior art, methods were known for synthesizing crystalline powder of simple perovskite type compounds such as BaTiO.sub.3. According to the conventional methods, however, when synthesizing a complex perovskite type compound having two atoms of different valences at the B site of perovskite structure by hydrolyzing metal alkoxides, there could be obtained only amorphous powder, and for crystallizing it, heating to a temperature of around 600.degree. to 800.degree. C. was necessary.According to the process of this invention, it is possible to synthesize the crystalline complex perovskite type compounds at a low temperature of around 100.degree. C., which is 500.degree. to 700.degree. C.
    Type: Grant
    Filed: June 30, 1989
    Date of Patent: April 17, 1990
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Osamu Inoue, Syunichiro Kawashima
  • Patent number: D366106
    Type: Grant
    Filed: September 20, 1993
    Date of Patent: January 9, 1996
    Assignee: Daikin Industries Ltd.
    Inventors: Katsutoshi Yamamoto, Osamu Tanaka, Osamu Inoue, Toshio Kusumi, Shinichi Chaen, Jun Asano, Nobuki Uraoka