Abstract: An enclosure of an electronic computing apparatus allows two electronic computing modules, each having a built-in fan, to be mounted in a perpendicular direction, when the two electronic computing modules are inserted, a shutter is at an intermediate position due to an elastic force of pushing a spring cover in a front surface direction, from push rods corresponding to the two electronic computing modules, and when one of the electronic computing modules is removed, the elastic force of pushing the cover from the push rod on the removal is lost, and the shutter moves, around a rotating mechanism, to a side of a housing space on the removal side and shuts off a flow path in the housing space.

Abstract: A booster lever unit includes a first lever pivotably supported by an object via a first pivotal shaft, a second lever pivotably supported by the object via a second pivotal shaft, and a linkage member that links the first lever to the second lever. The pivotal plane of the first lever is parallel to the pivotal plane of the second lever. The first lever has one end provided with an operation section, and another end provided with the first pivotal shaft, and the first lever further includes a first linker, the first linker being provided between the operation section and the first pivotal shaft and linked to the linkage member. The second lever has one end provided with an action section, and another end provided with a second linker linked to the linkage member, and the second pivotal shaft is provided between the action section and the second linker.

Abstract: An enclosure of an electronic computing apparatus allows two electronic computing modules, each having a built-in fan, to be mounted in a perpendicular direction, when the two electronic computing modules are inserted, a shutter is at an intermediate position due to an elastic force of pushing a spring cover in a front surface direction, from push rods corresponding to the two electronic computing modules, and when one of the electronic computing modules is removed, the elastic force of pushing the cover from the push rod on the removal is lost, and the shutter moves, around a rotating mechanism, to a side of a housing space on the removal side and shuts off a flow path in the housing space.

Abstract: There is provided a system including: a control device mounted on an aircraft and configured to control the aircraft, the aircraft having a battery, and a wireless device configured to use power stored in the battery to provide a wireless communication service to a user terminal; and a module that is physically attachable to and detachable from the control device, in which the control device has a housing that includes a module attachment and detachment unit, and an electrical connection unit configured to electrically connect the module to the battery when the module is attached to the module attachment and detachment unit, and the module has, a power receiving unit configured to receive power from the battery, and a communication processing unit configured to use the power received by the power receiving unit to communicate with the wireless device.

Abstract: There is provided a system including: a control device mounted on an aircraft and configured to control the aircraft, the aircraft having a battery, and a wireless device configured to use power stored in the battery to provide a wireless communication service to a user terminal; and a module that is physically attachable to and detachable from the control device, in which the control device has a housing that includes a module attachment and detachment unit, and an electrical connection unit configured to electrically connect the module to the battery when the module is attached to the module attachment and detachment unit, and the module has, a power receiving unit configured to receive power from the battery, and a communication processing unit configured to use the power received by the power receiving unit to communicate with the wireless device.

Abstract: With a multi-beam type charged particle beam apparatus, and a projection charged particle beam apparatus, in the case of off-axial aberration corrector, there is the need for preparing a multitude of multipoles, and power supply sources in numbers corresponding to the number of the multipoles need be prepared. In order to solve this problem as described, a charged particle beam apparatus is provided with at least one aberration corrector wherein the number of the multipoles required in the past is decreased by about a half by disposing an electrostatic mirror in an electron optical system.

Abstract: In an electron microscope to which a phase retrieval method is applied, an image size determined by a pixel size p of a diffraction pattern, a camera length L, and a wavelength ? of an illumination beam is allowed to have a certain relation with an illumination area on a specimen. Further, a beam illumination area or a scanning area of a deflector when a magnified image is observed is set by an illumination adjustment system, so that an image size when the magnified image is used for the phase retrieval method is allowed to have a certain relation with the image size determined by the pixel size of the diffraction pattern, the camera length, and the wavelength of the illumination beam. Accordingly, the information of the diffraction pattern is substantially equal to an object image to be reconstructed.

Abstract: A charged particle beam microscope device of the present invention is configured such that in a diffraction pattern obtained by radiating a parallel charged particle beam onto a sample (22) having a known structure, a distance (r) between spots of a diffraction pattern, which reflects the structure of the sample, is measured, and the variation of a distance (L) between the sample and a detector, which depends on a diffraction angle (?), is corrected. This enables the correction of distortion that varies with an off-axis distance from the optical axis in a diffraction pattern, and a high precision structural analysis by performing accurately analyzing the spot positions of the diffraction pattern.

Abstract: With a multi-beam type charged particle beam apparatus, and a projection charged particle beam apparatus, in the case of off-axial aberration corrector, there is the need for preparing a multitude of multipoles, and power supply sources in numbers corresponding to the number of the multipoles need be prepared. In order to solve this problem as described, a charged particle beam apparatus is provided with at least one aberration corrector wherein the number of the multipoles required in the past is decreased by about a half by disposing an electrostatic mirror in an electron optical system.

Abstract: An lithography apparatus for manufacturing an organic transistor that is capable of aligning accurately in self-alignment fashion relative positions of a gate electrode and a pair of source and drain electrodes and has high productivity. In an lithography apparatus for radiating a light to a photosensitive self-assembled film and exposing the same in self-aligning fashion using a gate electrode as a mask, by transporting a flexible translucent substrate from roller to roller and forming a gate electrode, an insulating layer, and the photosensitive self-assembled film on the flexible substrate when an organic transistor is formed on the flexible substrate, a reflection preventing film is provided on an inner wall of the apparatus that is on the opposite side of the flexible substrate as seen from an exposure light source.

Abstract: In an electron microscope to which a phase retrieval method is applied, an image size determined by a pixel size p of a diffraction pattern, a camera length L, and a wavelength ? of an illumination beam is allowed to have a certain relation with an illumination area on a specimen. Further, a beam illumination area or a scanning area of a deflector when a magnified image is observed is set by an illumination adjustment system, so that an image size when the magnified image is used for the phase retrieval method is allowed to have a certain relation with the image size determined by the pixel size of the diffraction pattern, the camera length, and the wavelength of the illumination beam. Accordingly, the information of the diffraction pattern is substantially equal to an object image to be reconstructed.

Abstract: An object of the present invention is to measure a landing angle even in a multi electron beam lithography system in which current amount of each beam is small. Another object thereof is to measure an absolute value of the landing angle and a relative landing angle with the high SN ratio. In a transmission detector including two diaphragm plates (first and second diaphragms) and a detector, a detection angle determined by a distance between the first and second diaphragms and an aperture diameter of the second diaphragm is made equal to or smaller than the divergence angle of the electron beam to be measured, and the landing angle is determined based on the relation between a center of the fine hole of the first diaphragm and the center of the aperture of the second diaphragm at which the amount of detected current is maximum.

Abstract: This invention provides a charged particle beam apparatus that can makes reduction in off axis aberration and separate detection of secondary beams to be compatible. The charged particle beam apparatus has: an electron optics that forms a plurality of primary charged particle beams, projects them on a specimen, and makes them scan the specimen with a first deflector; a plurality of detectors that individually detect a plurality of secondary charged particle beams produced from the plurality of locations of the specimen by irradiation of the plurality of primary charged particle beams; and a voltage source for applying a voltage to the specimen.

Abstract: A case includes a case body, a lid, hinges supporting the lid on the case body and a waterproof seal placed on the joining surface of the case body. The lid can be turned for closing on the hinges so as to compress the waterproof seal perpendicularly to the joining surface of the case body. Each hinge is provided with a hinge pin having opposite cylindrical end parts and an offset middle part defining a groove together with the cylindrical end parts. The grooves of the hinges permit first knuckles formed integrally with the lid to sink therein so that the lid held with its joining surface parallel to the joining surface of the case body can be moved toward the case body perpendicularly to the joining surface of the case body to compress the waterproof seal perpendicularly between the joining surfaces of the lid and the case body. The hinge pin is restrained from coming off by the first knuckles when the first knuckles are engaged in the groove.

Abstract: A charged particle beam exposure apparatus for writing a desired pattern on a substrate using a charged particle beam. The apparatus includes a blanking unit, having a deflector capable of deflecting the charged particle beam in at least two directions, configured to control beam passage to the substrate by deflecting the charged particle beam, and a setting unit configured to set a deflection direction of the charged particle beam by the deflector.

Abstract: An object of the present invention is to measure a landing angle even in a multi electron beam lithography system in which current amount of each beam is small. Another object thereof is to measure an absolute value of the landing angle and a relative landing angle with the high SN ratio. In a transmission detector including two diaphragm plates (first and second diaphragms) and a detector, a detection angle determined by a distance between the first and second diaphragms and an aperture diameter of the second diaphragm is made equal to or smaller than the divergence angle of the electron beam to be measured, and the landing angle is determined based on the relation between a center of the fine hole of the first diaphragm and the center of the aperture of the second diaphragm at which the amount of detected current is maximum.

Abstract: Disclosed is equipment for charged-particle beam lithography capable of executing exposure even when an electron beam with a bad property is produced due to a failure in some multibeam forming element, without replacing the failing multibeam forming element and without reducing the exposure accuracy. The equipment includes means for forming a plurality of charged-particle beams arranged at predetermined intervals; a plurality of blankers which act on the plurality of charged-particle beams individually; a common blanker which acts on all of the plurality of charged-particle beams; and a blanking restriction for causing those charged-particle beams which are given predetermined deflection by the plurality of blankers to reach onto a sample, with a signal applied to the common blanker, and blocking those charged-particle beams which are not given the predetermined deflection by the plurality of blankers to the sample.

Abstract: The present invention provides a writing technique which can perform high-accuracy overlay writing in electron beam writing equipment performing mark detection by light.

Abstract: Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.

Abstract: An electron beam exposure apparatus for exposing wafer with an electron beam, includes: a first electromagnetic lens system for making the electron beam incident substantially perpendicularly on a first plane be incident on a second plane substantially perpendicularly; a second electromagnetic lens system for making the electron beam that was substantially perpendicularly incident on the second plane be incident on the wafer substantially perpendicularly; a rotation correction lens provided within the first electromagnetic lens system for correcting rotation of the electron beam caused by at least the first electromagnetic lens system; a deflection system for deflecting the electron beam to a position on the wafer; and a deflection-correction optical system provided within the second electromagnetic lens system for correcting deflection aberration caused by the deflection system.