Abstract: An electron beam writing system, using discrete electron beams in which the interval of the beams is larger than the size of the beams, generates plural electron beams, on/off controls each of the electron beams according to pattern data to be written, and deflects the electron beams together, thereby performing writing on a wafer. One side of a unit writing area of the electon beams is larger than substantially twice the interval of the electron beams or substantially an integral multiple thereof.

Abstract: A charged particle beam exposure apparatus has a beam shaping optical system which forms an image of a charged particle source that emits charged particle beams, an aperture array and electrostatic lens which form a plurality of images of the charged particle source from the image of the charged particle source, a reduction electron optical system which reduces and projects the plurality of images of the charged particle source onto a wafer, and the first stigmator which generates astigmatism when the beam shaping optical system forms the image of the charged particle source in order to correct astigmatism generated in the reduction electron optical system. A charged particle beam exposure method of exposing a substrate by scanning with charged particle beams includes an adjustment step of making the size in the scanning direction of charged particle beams on the substrate smaller than the size in a direction perpendicular to the direction.

Abstract: In a charged particle exposure apparatus which exposes a substrate using a blanking unit to repeat blocking and exposure of charged particle beam to the substrate, a blanking direction is adjusted. As an example of the blanking direction, a direction vertical to a raster scanning direction is used.

Abstract: In a charged-particle-beam exposure apparatus for exposing a wafer using a charged-particle beam, an electron beam emitted from an electron source serving as a source of charged particles is substantially collimated by a collimator lens and irradiates an aperture array (3), which has apertures for forming a plurality of electron beams used to expose a wafer. A current detector array has current detectors for measuring the intensities (currents) of electron beams at portions of the-aperture array other than where the apertures are present. During the wafer exposure operation, each current detector of the current detector array measures the intensity of the electron beam. The electron-beam intensity distribution is evaluated based upon the results of measurement and, when necessary, the optical power of electrostatic lenses that construct the collimator lens (2) is adjusted to uniformalize the electron-beam intensity distribution.

Abstract: A case includes a case body, a lid, hinges supporting the lid on the case body and a waterproof seal placed on the joining surface of the case body. The lid can be turned for closing on the hinges so as to compress the waterproof seal perpendicularly to the joining surface of the case body. Each hinge is provided with a hinge pin having opposite cylindrical end parts and an offset middle part defining a groove together with the cylindrical end parts. The grooves of the hinges permit first knuckles formed integrally with the lid to sink therein so that the lid held with its joining surface parallel to the joining surface of the case body can be moved toward the case body perpendicularly to the joining surface of the case body to compress the waterproof seal perpendicularly between the joining surfaces of the lid and the case body. The hinge pin is restrained from coming off by the first knuckles when the first knuckles are engaged in the groove.

Abstract: The present invention provides a writing technique which can perform high-accuracy overlay writing in electron beam writing equipment performing mark detection by light.

Abstract: Disclosed is equipment for charged-particle beam lithography capable of executing exposure even when an electron beam with a bad property is produced due to a failure in some multibeam forming element, without replacing the failing multibeam forming element and without reducing the exposure accuracy. The equipment includes means for forming a plurality of charged-particle beams arranged at predetermined intervals; a plurality of blankers which act on the plurality of charged-particle beams individually; a common blanker which acts on all of the plurality of charged-particle beams; and a blanking restriction for causing those charged-particle beams which are given predetermined deflection by the plurality of blankers to reach onto a sample, with a signal applied to the common blanker, and blocking those charged-particle beams which are not given the predetermined deflection by the plurality of blankers to the sample.

Abstract: Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.

Abstract: A charged particle beam exposure apparatus has a beam shaping optical system which forms an image of a charged particle source that emits charged particle beams, an aperture array and electrostatic lens which form a plurality of images of the charged particle source from the image of the charged particle source, a reduction electron optical system which reduces and projects the plurality of images of the charged particle source onto a wafer, and the first stigmator which generates astigmatism when the beam shaping optical system forms the image of the charged particle source in order to correct astigmatism generated in the reduction electron optical system. A charged particle beam exposure method of exposing a substrate by scanning with charged particle beams includes an adjustment step of making the size in the scanning direction of charged particle beams on the substrate smaller than the size in a direction perpendicular to the direction.

Abstract: There is provided an electron beam exposure technique which permits optical adjustment in an electron optics system using a doublet lens necessary for large field projection. Electron beam exposure equipment having a part forming one image by at least two electromagnetic lenses, has means measuring the position of an electron beam near an image plane with changing excitation of at least two lenses at the same time; and control means feeding back the measured result to aligners or the intensity of the lenses.

Abstract: Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample. The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.

Abstract: In a charged-particle-beam exposure apparatus for exposing a wafer using a charged-particle beam, an electron beam emitted from an electron source serving as a source of charged particles is substantially collimated by a collimator lens and irradiates an aperture array (3), which has apertures for forming a plurality of electron beams used to expose a wafer. A current detector array has current detectors for measuring the intensities (currents) of electron beams at portions of the-aperture array other than where the apertures are present. During the wafer exposure operation, each current detector of the current detector array measures the intensity of the electron beam. The electron-beam intensity distribution is evaluated based upon the results of measurement and, when necessary, the optical power of electrostatic lenses that construct the collimator lens (2) is adjusted to uniformalize the electron-beam intensity distribution.

Abstract: There is provided an electron beam wiring technique which can correct deflection for a micro field used in electron beam writing equipment with high precision.

Abstract: There is provided an electron beam exposure technique which permits optical adjustment in an electron optics system using a doublet lens necessary for large field projection.

Abstract: The present invention intends to improve the writing accuracy in an electron beam writing system using discrete multi beams in which the interval of the beams is larger than the size of the beams. In electron beam writing equipment which uses means generating multi electron beams; means on/off controlling each of the multi electron beams according to pattern data that should be written; and means deflecting the multi electron beams together, thereby performing writing on a wafer, one side of a unit writing area of the multi electron beams is larger than substantially twice the interval of the electron beams or substantially an integral multiple thereof.

Abstract: An electron beam exposure apparatus for exposing wafer with an electron beam, includes: the first electromagnetic lens system for making the electron beam incident substantially perpendicularly on the first plane be incident on the second plane substantially perpendicularly; the second electromagnetic lens system for making the electron beam that was substantially perpendicularly incident on the second plane be incident on the wafer substantially perpendicularly; a rotation correction lens for correcting rotation of the electron beam caused by the first electromagnetic lens system and/or the second electromagnetic lens system; a deflection system for deflecting the electron beam to a position on the wafer, that is to be irradiated with the electron beam; and a deflection-correction optical system for correcting deflection aberration caused by the deflection system.

Abstract: An improved, compact, lightweight handy-phone provided with a built-in directional planar antenna is provided. The planar antenna is mounted on a portion of a high-frequency printed wiring board, and a shielding case covers the high-frequency printed wiring board with a surface of the portion exposed. A maximum linear size of the shielding case in the direction of main polarization of the planar antenna is nearly equal to half the wavelength of an electromagnetic wave to be radiated by the planar antenna.

Abstract: A multilayered wiring board having a printed inductor which is formed on a grounding layer or electric power supply layer through a dielectric layer inserted between them, wherein a removed portion is formed only in the grounding layer or electric power supply layer which is positioned right under the printed inductor and in the neighboring area and no removed portion is formed in the dielectric layer. According to this structure, without increasing the manufacture cost, the distance between the printed inductor and the grounding layer or electric power supply layer opposite to it spreads to the lower electric power supply layer or grounding layer and the stray capacity existing therebetween is reduced, and a reduction of the self-resonance frequency of the printed inductor is prevented, and the frequency characteristics improve.