Patents by Inventor Osamu Matsuda
Osamu Matsuda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170092461Abstract: Disclosed herein is a method for acquiring an image, in which an image reducing the influence of electrification of a substrate is easily acquired. The method, in which an image of an image acquiring region is acquired by radiating an ion beam to a sample having a conducting part with a linear edge on a dielectric substrate, includes: performing an equal-width scan caused by the ion beam in a first direction that obliquely intersects the edge and sweep in a second direction intersecting the first direction, and radiating the ion beam to a scan region of a parallelogram shape wider than the image acquiring region; detecting secondary charged particles to generate image data of the scan region; calculating the image data of the scan region to generate image data of the image acquiring region; and displaying the image data of the image acquiring region.Type: ApplicationFiled: September 28, 2016Publication date: March 30, 2017Inventors: Tomokazu KOZAKAI, Fumio ARAMAKI, Osamu MATSUDA, Kensuke SHIINA, Kazuo AITA, Anto YASAKA
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Patent number: 9583299Abstract: There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.Type: GrantFiled: August 8, 2014Date of Patent: February 28, 2017Assignee: Hitachi High-Tech Science CorporationInventors: Tomokazu Kozakai, Osamu Matsuda, Yasuhiko Sugiyama, Kazuo Aita, Fumio Aramaki, Anto Yasaka, Hiroshi Oba
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Publication number: 20160322123Abstract: There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing ions of a gas generated in the gas field ion source, a sample stage which moves while a sample to be irradiated with the focused ion beam is placed thereon, a sample chamber which accommodates at least the sample stage therein, and a control unit which repairs a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column. The gas field ion source generates nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions.Type: ApplicationFiled: June 22, 2016Publication date: November 3, 2016Inventors: Fumio Aramaki, Anto Yasaka, Osamu Matsuda, Yasuhiko Sugiyama, Hiroshi Oba, Tomokazu Kozakai, Kazuo Aita
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Publication number: 20160225574Abstract: Disclosed herein is a focused ion beam apparatus equipped with a gas field ion source that can produce a focused ion beam for a long period of time by stably and continuously emitting ions from the gas field ion source having high luminance, along an optical axis of an ion-optical system for a long period of time. In the focused ion beam apparatus equipped with a gas field ion source having an emitter for emitting ions, the emitter has a shape in which sharpened iridium is fixed to dissimilar wire.Type: ApplicationFiled: January 29, 2016Publication date: August 4, 2016Inventors: Anto YASAKA, Tomokazu KOZAKAI, Osamu MATSUDA, Yasuhiko SUGIYAMA, Kazuo AITA, Fumio ARAMAKI, Hiroshi OBA
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Patent number: 9378858Abstract: There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing ions of a gas generated in the gas field ion source, a sample stage which moves while a sample to be irradiated with the focused ion beam is placed thereon, a sample chamber which accommodates at least the sample stage therein, and a control unit which repairs a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column. The gas field ion source generates nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions.Type: GrantFiled: August 22, 2014Date of Patent: June 28, 2016Assignee: Hitachi High-Tech Science CorporationInventors: Fumio Aramaki, Anto Yasaka, Osamu Matsuda, Yasuhiko Sugiyama, Hiroshi Oba, Tomokazu Kozakai, Kazuo Aita
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Patent number: 9336979Abstract: A focused ion beam apparatus has an ion source chamber in which is disposed an emitter for emitting ions. The surface of the emitter is formed of a precious metal, such as platinum, palladium, iridium, rhodium or gold. A gas supply unit supplies nitrogen gas to the ion source chamber so that the nitrogen gas adsorbs on the surface of the emitter. An extracting electrode is spaced from the emitter, and a voltage is applied to the extracting electrode to ionize the adsorbed nitrogen gas and extract nitrogen ions in the form of an ion beam. A temperature control unit controls the temperature of the emitter.Type: GrantFiled: January 7, 2015Date of Patent: May 10, 2016Assignee: HITACHI HIGH-TECH SCIENCE CORPORATIONInventors: Anto Yasaka, Fumio Aramaki, Yasuhiko Sugiyama, Tomokazu Kozakai, Osamu Matsuda
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Patent number: 9245712Abstract: A focused ion beam system includes a gas field ion source which generates gas ions, an ion gun unit which accelerates the gas ions and radiates the gas ions as an ion beam, a beam optical system which includes at least a focusing lens electrode and radiates the ion beam onto a sample, and an image acquiring mechanism which acquires an FIM image of a tip of an emitter based on the ion beam. The image acquiring mechanism includes an alignment electrode which is disposed between the ion gun unit and the focusing lens electrode and adjusts a radiation direction of the ion beam, an alignment control unit which applies an alignment voltage to the alignment electrode, and an image processing unit which combines a plurality of FIM images acquired when applying different alignment voltages to generate one composite FIM image.Type: GrantFiled: March 21, 2014Date of Patent: January 26, 2016Assignee: HITACHI HIGH-TECH SCIENCE CORPORATIONInventors: Yasuhiko Sugiyama, Tomokazu Kozakai, Osamu Matsuda
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Publication number: 20150162160Abstract: A focused ion beam apparatus has an ion source chamber in which is disposed an emitter for emitting ions. The surface of the emitter is formed of a precious metal, such as platinum, palladium, iridium, rhodium or gold. A gas supply unit supplies nitrogen gas to the ion source chamber so that the nitrogen gas adsorbs on the surface of the emitter. An extracting electrode is spaced from the emitter, and a voltage is applied to the extracting electrode to ionize the adsorbed nitrogen gas and extract nitrogen ions in the form of an ion beam. A temperature control unit controls the temperature of the emitter.Type: ApplicationFiled: January 7, 2015Publication date: June 11, 2015Inventors: Anto YASAKA, Fumio ARAMAKI, Yasuhiko SUGIYAMA, Tomokazu KOZAKAI, Osamu MATSUDA
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Patent number: 8999178Abstract: A method for fabricating a sharpened needle-like emitter, the method including: electrolytically polishing an end portion of an electrically conductive emitter material so as to be tapered toward a tip portion thereof; performing a first etching in which the electrolytically polished part of the emitter material is irradiated with a charged-particle beam to form a pyramid-like sharpened part having a vertex including the tip portion; performing a second etching in which the tip portion is further sharpened through field-assisted gas etching, while observing a crystal structure at the tip portion by a field ion microscope and keeping the number of atoms at a leading edge of the tip portion at a predetermined number or less; and heating the emitter material to arrange the atoms at the leading edge of the tip portion of the sharpened part in a pyramid shape.Type: GrantFiled: May 15, 2014Date of Patent: April 7, 2015Assignee: Hitachi High-Tech Science CorporationInventors: Yasuhiko Sugiyama, Kazuo Aita, Fumio Aramaki, Tomokazu Kozakai, Osamu Matsuda, Anto Yasaka
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Publication number: 20150053866Abstract: There is provided a repair apparatus including a gas field ion source which includes an ion generation section including a sharpened tip, a cooling unit which cools the tip, an ion beam column which forms a focused ion beam by focusing ions of a gas generated in the gas field ion source, a sample stage which moves while a sample to be irradiated with the focused ion beam is placed thereon, a sample chamber which accommodates at least the sample stage therein, and a control unit which repairs a mask or a mold for nano-imprint lithography, which is the sample, with the focused ion beam formed by the ion beam column. The gas field ion source generates nitrogen ions as the ions, and the tip is constituted by an iridium single crystal capable of generating the ions.Type: ApplicationFiled: August 22, 2014Publication date: February 26, 2015Applicant: Hitachi High-Tech Science CorporationInventors: Fumio Aramaki, Anto Yasaka, Osamu Matsuda, Yasuhiko Sugiyama, Hiroshi Oba, Tomokazu Kozakai, Kazuo Aita
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Nitrogen ions from a gas field ion source held at a pressure of 1.0 x 10^(-6) pa to 1.0 x 10^(-2) pa
Patent number: 8963100Abstract: A focused ion beam apparatus has an ion source chamber in which is disposed an emitter for emitting ions. A gas supply unit supplies nitrogen gas to the ion source chamber so that the nitrogen gas adsorbs on the surface of the emitter, and the gas supply unit maintains the pressure in the ion source chamber in the range 1.0×10?6 Pa to 1.0×10?2 Pa. An extracting electrode is spaced from the emitter, and a voltage is applied to the extracting electrode to ionize the adsorbed nitrogen gas and extract nitrogen ions in the form of an ion beam. A temperature control unit controls the temperature of the emitter.Type: GrantFiled: October 18, 2012Date of Patent: February 24, 2015Assignee: Hitachi High-Tech Science CorporationInventors: Anto Yasaka, Fumio Aramaki, Yasuhiko Sugiyama, Tomokazu Kozakai, Osamu Matsuda -
Publication number: 20150047079Abstract: There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.Type: ApplicationFiled: August 8, 2014Publication date: February 12, 2015Applicant: Hitachi High-Tech Science CorporationInventors: Tomokazu Kozakai, Osamu Matsuda, Yasuhiko Sugiyama, Kazuo Aita, Fumio Aramaki, Anto Yasaka, Hiroshi Oba
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Patent number: 8890093Abstract: A focused ion beam apparatus includes a lens interferometer configured to detect a relative position of an ion beam column and a sample. An image forming section includes an irradiation position specifying section configured to specify an irradiation position of an ion beam based on the detected relative position of the ion beam column and the sample, and a luminance setting section configured to set luminance of a pixel of an observation image based on the specified irradiation position of the ion beam and a detected amount of secondary particles.Type: GrantFiled: March 18, 2014Date of Patent: November 18, 2014Assignee: Hitachi High-Tech Science CorporationInventors: Tomokazu Kozakai, Fumio Aramaki, Osamu Matsuda
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Patent number: 8871653Abstract: An etching agent for a semiconductor substrate, which is capable of etching a titanium (Ti)-based metal film on a semiconductor substrate and an etching method using the etching agent, and relates to a liquid for preparing the etching agent for a semiconductor substrate composed of a solution comprising (A) hydrogen peroxide, (B) a phosphonic acid chelating agent having a hydroxyl group, (C) a basic compound, and (D-1) a copper anticorrosive. An etching method for etching a titanium (Ti)-based metal film on a semiconductor substrate using the etching agent. A solution comprising (B) a phosphonic acid chelating agent having a hydroxyl group, (C) a basic compound, and (D-1) a copper anticorrosive.Type: GrantFiled: March 18, 2013Date of Patent: October 28, 2014Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Osamu Matsuda, Nobuyuki Kikuchi, Ichiro Hayashida, Satoshi Shirahata
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Publication number: 20140291509Abstract: A focused ion beam apparatus includes a lens interferometer configured to detect a relative position of an ion beam column and a sample. An image forming section includes an irradiation position specifying section configured to specify an irradiation position of an ion beam based on the detected relative position of the ion beam column and the sample, and a luminance setting section configured to set luminance of a pixel of an observation image based on the specified irradiation position of the ion beam and a detected amount of secondary particles.Type: ApplicationFiled: March 18, 2014Publication date: October 2, 2014Applicant: HITACHI HIGH-TECH SCIENCE CORPORATIONInventors: Tomokazu KOZAKAI, Fumio ARAMAKI, Osamu MATSUDA
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Publication number: 20140284474Abstract: A focused ion beam system includes a gas field ion source which generates gas ions, an ion gun unit which accelerates the gas ions and radiates the gas ions as an ion beam, a beam optical system which includes at least a focusing lens electrode and radiates the ion beam onto a sample, and an image acquiring mechanism which acquires an FIM image of a tip of an emitter based on the ion beam. The image acquiring mechanism includes an alignment electrode which is disposed between the ion gun unit and the focusing lens electrode and adjusts a radiation direction of the ion beam, an alignment control unit which applies an alignment voltage to the alignment electrode, and an image processing unit which combines a plurality of FIM images acquired when applying different alignment voltages to generate one composite FIM image.Type: ApplicationFiled: March 21, 2014Publication date: September 25, 2014Applicant: HITACHI HIGH-TECH SCIENCE CORPORATIONInventors: Yasuhiko SUGIYAMA, Tomokazu KOZAKAI, Osamu MATSUDA
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Patent number: 8828918Abstract: An object of the present invention is to provide a semiconductor surface treating agent composition, which can realize easy removing of an anti-reflection coating layer in a production process of a semiconductor device or the like at a low temperature in a short time, a method for treating a semiconductor surface using the same, and further a semiconductor surface treating agent composition, which can realize not only removing of both layer of an anti-reflection coating layer and a resist layer, but can realize even removing of a cured resist layer produced in an etching process, and a method for treating a semiconductor surface using the same. The semiconductor surface treating agent composition of the present invention is characterized by comprising a compound which generates a fluorine ion in water, a carbon radical generating agent, and water and optionally an organic solvent, and the method for treating a semiconductor surface of the present invention is characterized by using the composition.Type: GrantFiled: March 6, 2009Date of Patent: September 9, 2014Assignee: Wako Pure Chemical Industries, Ltd.Inventors: Hironori Mizuta, Osamu Matsuda
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Publication number: 20140246397Abstract: A method for fabricating a sharpened needle-like emitter, the method including: electrolytically polishing an end portion of an electrically conductive emitter material so as to be tapered toward a tip portion thereof; performing a first etching in which the electrolytically polished part of the emitter material is irradiated with a charged-particle beam to form a pyramid-like sharpened part having a vertex including the tip portion; performing a second etching in which the tip portion is further sharpened through field-assisted gas etching, while observing a crystal structure at the tip portion by a field ion microscope and keeping the number of atoms at a leading edge of the tip portion at a predetermined number or less; and heating the emitter material to arrange the atoms at the leading edge of the tip portion of the sharpened part in a pyramid shape.Type: ApplicationFiled: May 15, 2014Publication date: September 4, 2014Applicant: HITACHI HIGH-TECH SCIENCE CORPORATIONInventors: Yasuhiko SUGIYAMA, Kazuo AITA, Fumio ARAMAKI, Tomokazu KOZAKAI, Osamu MATSUDA, Anto YASAKA
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Patent number: 8764994Abstract: A method for fabricating a sharpened needle-like emitter, the method including: electrolytically polishing an end portion of an electrically conductive emitter material so as to be tapered toward a tip portion thereof; performing a first etching in which the electrolytically polished part of the emitter material is irradiated with a charged-particle beam to form a pyramid-like sharpened part having a vertex including the tip portion; performing a second etching in which the tip portion is further sharpened through field-assisted gas etching, while observing a crystal structure at the tip portion by a field ion microscope and keeping the number of atoms at a leading edge of the tip portion at a predetermined number or less; and heating the emitter material to arrange the atoms at the leading edge of the tip portion of the sharpened part in a pyramid shape.Type: GrantFiled: March 18, 2013Date of Patent: July 1, 2014Assignee: Hitachi High-Tech Science CorporationInventors: Yasuhiko Sugiyama, Kazuo Aita, Fumio Aramaki, Tomokazu Kozakai, Osamu Matsuda, Anto Yasaka
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Publication number: 20130248483Abstract: A method for fabricating a sharpened needle-like emitter, the method including: electrolytically polishing an end portion of an electrically conductive emitter material so as to be tapered toward a tip portion thereof; performing a first etching in which the electrolytically polished part of the emitter material is irradiated with a charged-particle beam to form a pyramid-like sharpened part having a vertex including the tip portion; performing a second etching in which the tip portion is further sharpened through field-assisted gas etching, while observing a crystal structure at the tip portion by a field ion microscope and keeping the number of atoms at a leading edge of the tip portion at a predetermined number or less; and heating the emitter material to arrange the atoms at the leading edge of the tip portion of the sharpened part in a pyramid shape.Type: ApplicationFiled: March 18, 2013Publication date: September 26, 2013Applicant: HITACHI HIGH-TECH SCIENCE CORPORATIONInventors: Yasuhiko SUGIYAMA, Kazuo AITA, Fumio ARAMAKI, Tomokazu KOZAKAI, Osamu MATSUDA, Anto YASAKA