Abstract: An ultrafine copper alloy wire drawn to a diameter of not more than 0.08 mm is provided which is formed of an alloy comprising a copper matrix of high purity copper with a total unavoidable impurity content of not more than 10 mass ppm and, contained in the matrix, 0.05 to 0.9 mass % of at least one metallic element selected from the group consisting of tin, indium, silver, antimony, magnesium, aluminum, and boron. By virtue of this constitution, the ultrafine copper alloy wire has excellent tensile strength, electrical conductivity, and drawability.

Abstract: An ultrafine copper alloy wire drawn to a diameter of not more than 0.08 mm is provided which is formed of an alloy having a copper matrix of high purity copper with a total unavoidable impurity content of not more than 10 mass ppm. Contained in the matrix is 0.05 to 0.9 mass % of at least one metallic element selected from the group including tin, indium, silver, antimony, magnesium, aluminum, and boron. By virtue of this constitution, the ultrafine copper alloy wire has excellent tensile strength, electrical conductivity, and drawability.

Abstract: This invention provides a composite conductor having excellent strength, flexing resistance and corrosion resistance, a production method thereof and a cable employing the same composite conductor. A corrosion resistant layer is formed of Au, Ag, Sn, Ni, solder, Zn, Pd, Sn—Ni alloy, Ni—Co alloy, Ni—P alloy, Ni—Co—P alloy, Cu—Zn alloy, Sn—Bi alloy, Sn—Ag—cu alloy, Sn—Cu alloy or Sn—Zn alloy in the thickness of 0.5 &mgr;m or more on an external periphery of a core made of copper-metal fiber conductor. A wire material made of the copper-metal fiber conductor is subjected to area reduction processing. In the middle of the area reduction processing or after the area reduction processing is completed, corrosion resistant layer is formed on the periphery of the wire material in the thickness of 0.

Abstract: An NPN bipolar transistor and a PNP bipolar transistor are formed in a semiconductor substrate. The NPN bipolar transistor has a p type emitter region, a p type collector region and an n type base region and is formed in an NPN forming region. The PNP bipolar transistor has an n type emitter region, an n type collector region and a p type base region and is formed in a PNP forming region. Only one conductive type burying region is formed in at least one of the NPN forming region and the PNP forming region. A current that flows from the p type emitter region to the n type base region flows in the n type base region in a direction perpendicular to the substrate.

Abstract: A wire rod comprising high-purity copper having a total unavoidable impurity content of not more than 1 ppm by mass and, added to the high-purity copper, 1.0 to 5.0% by mass of silver having a purity of not less than 99.99% by mass is drawn to an ultrafine copper alloy wire with a diameter of not more than 0.08 mm. According to this constitution, since the content of foreign matter, causative of breaking of wires, in a base material has been minimized, excellent wire drawability and bending properties can be realized. Further, since silver is used as an additive element, the ultrafine copper alloy wire possesses excellent tensile strength. This constitution can further realize a stranded copper alloy wire conductor, and an extrafine coaxial cable possessing excellent tensile strength, wire drawability, and bending properties.