Abstract: A chip attach frame is used to align pins of an integrated circuit chip with pads on a chip carrier. A frame block has a socket defining two alignment edges that form a reference corner. The chip is lowered into the socket, and the chip carrier is inclined while it supports the frame block and chip until the chip moves under force of gravity to the reference corner. Once located at the reference corner, the chip position is carefully adjusted by moving the frame block in the x- and y-directions until the pins are aligned with the pads. The frame block is spring biased against movement in the x- and y-directions, and the position of the frame block is adjusted using thumbscrews. A plunger mechanism can be used to secure the integrated circuit chip in forcible engagement with the chip carrier once the pins are aligned with the pads.

Abstract: A chip attach frame is used to align pins of an integrated circuit chip with pads on a chip carrier. A frame block has a socket defining two alignment edges that form a reference corner. The chip is lowered into the socket, and the chip carrier is inclined while it supports the frame block and chip until the chip moves under force of gravity to the reference corner. Once located at the reference corner, the chip position is carefully adjusted by moving the frame block in the x- and y-directions until the pins are aligned with the pads. The frame block is spring biased against movement in the x- and y-directions, and the position of the frame block is adjusted using thumbscrews. A plunger mechanism can be used to secure the integrated circuit chip in forcible engagement with the chip carrier once the pins are aligned with the pads.

Abstract: A system for measuring a test voltage level (Vx) in a location within a chip is presented. The system includes an on-chip measurement device with an on-chip comparator and an on-chip storage. The on-chip comparator is configured for comparing the test voltage (Vx) to be measured to a reference voltage (Vref), while the on-chip storage is configured for storing the result of this comparison. The system also includes external (off-chip) equipment for generating the reference voltage (Vref), for generating probe signals for probing the state of the storage and for retrieving the state of said on-chip storage.

Abstract: A method for determining power consumption of a power domain within an integrated circuit is presented. In a first step, a local power supply impedance profile (Z(f)) of this power domain is determined. Subsequently, a local time-resolved power supply voltage (U(t)) is measured while a well-defined periodic activity is executed in power domain. A set of time-domain measured voltage data (U(t)) is thus accumulated and transformed into the frequency domain to yield a voltage spectrum (U(f)). A current spectrum I(t) is calculated from this voltage profile (U(f)) by using the power supply impedance profile Z(f) of this power domain as I(t)=Ff?1{U(f)/Z(f)}. Finally, a time-resolved power consumption spectrum P(t) is determined from measured voltage spectrum U(t)) and calculated current spectrum (I(t)). This power consumption (P(t)) may be compared with a reference (Pref(t)) to verify whether power consumption within power domain matches expectations.

Abstract: A method and system for performing a self-test of power supply quality for an integrated circuit chip within an electronic system. The electronic system is subjected to a well-defined repetitive activity, such as by using an amplitude modulated system clock tree. With the repetitive activity causing current consumption within the chip, time-domain local power supply voltage (U(t)) is measured for a location on the chip. A set of time-domain measured voltage data (U(t)) is accumulated and transformed into the frequency domain to yield a local voltage profile (U(f)). The local voltage profile (U(f)) is compared with a reference voltage profile (U0(f)) to verify whether power supply quality at the chip location under test is adequate. Alternatively, a local impedance profile Z(f) evaluated from the local voltage profile (U(f)) may be compared to a reference impedance profile Z0(f).

Abstract: The invention relates to a method and system for testing bit failures in array elements of an electronic circuit. Said method comprising the steps of changing an original hardware representation (DD) of the array such that errors can be injected in a memory by manipulation of associated read and/or write logic of the memory via input signals, building an emulator model (SME) from said changed hardware representation for emulating the array, and injecting errors into the changed hardware representation for determining the array to get stick capabilities.

Abstract: The invention relates to a wordline booster circuit, especially an SRAM-wordline booster circuit, comprising a driving element (20) for shifting a voltage level of a charge storage element (50) for storing a charge necessary to generate a boosted voltage (Vb), a feedback element (30) for controlling the switching state of a charging element (40), wherein the charging element (40) is actively switchable between a turned-off state during a first time interval and a turned-on state during a second time interval, and an output port (14) for supplying the boost voltage to at least one wordline-driver circuit (100) of a memory device (200). The invention relates also to an operation method for such a wordline booster circuit as well as a memory array implementation on an integrated circuit, especially an SRAM memory array, with a wordline booster circuit.

Abstract: The invention relates to a wordline booster circuit, especially an SRAM-wordline booster circuit, comprising a driving element (20) for shifting a voltage level of a charge storage element (50) for storing a charge necessary to generate a boosted voltage (Vb), a feedback element (30) for controlling the switching state of a charging element (40), wherein the charging element (40) is actively switchable between a turned-off state during a first time interval and a turned-on state during a second time interval, and an output port (14) for supplying the boost voltage to at least one wordline-driver circuit (100) of a memory device (200). The invention relates also to an operation method for such a wordline booster circuit as well as a memory array implementation on an integrated circuit, especially an SRAM memory array, with a wordline booster circuit.

Abstract: The invention relates to a method and system for testing bit failures in array elements of an electronic circuit. Said method comprising the steps of changing an original hardware representation (DD) of the array such that errors can be injected in a memory by manipulation of associated read and/or write logic of the memory via input signals, building an emulator model (SME) from said changed hardware representation for emulating the array, and injecting errors into the changed hardware representation for determining the array to get stick capabilities.

Abstract: The invention relates to a wordline booster circuit, especially an SRAM-wordline booster circuit, comprising a driving element (20) for shifting a voltage level of a charge storage element (50) for storing a charge necessary to generate a boosted voltage (Vb), a feedback element (30) for controlling the switching state of a charging element (40), wherein the charging element (40) is actively switchable between a turned-off state during a first time interval and a turned-on state during a second time interval, and an output port (14) for supplying the boost voltage to at least one wordline-driver circuit (100) of a memory device (200). The invention relates also to an operation method for such a wordline booster circuit as well as a memory array implementation on an integrated circuit, especially an SRAM memory array, with a wordline booster circuit.

Abstract: The invention relates to a wordline booster circuit, especially an SRAM-wordline booster circuit, comprising a driving element (20) for shifting a voltage level of a charge storage element (50) for storing a charge necessary to generate a boosted voltage (Vb), a feedback element (30) for controlling the switching state of a charging element (40), wherein the charging element (40) is actively switchable between a turned-off state during a first time interval and a turned-on state during a second time interval, and an output port (14) for supplying the boost voltage to at least one wordline-driver circuit (100) of a memory device (200). The invention relates also to an operation method for such a wordline booster circuit as well as a memory array implementation on an integrated circuit, especially an SRAM memory array, with a wordline booster circuit.

Abstract: A method for performing a test of a high-speed integrated circuit with at least one functional unit and built-in self-test features by a low-speed test system. The method comprises the steps of transforming an external clock signal from the test system into a faster internal clock signal within the integrated circuit, generating a test pattern according to a predetermined scheme, and applying the test pattern to the functional unit, comparing a response from the functional unit with an expected test pattern. If the response differs from the expected test pattern, then an internal failure signal is generated and the internal failure signal is extended to a length, which may be recognized by the test system. Further the present invention relates to a high-speed integrated circuit with at least one functional unit and built-in self-test features.

Abstract: A method and device are presented for precise alignment of a semiconductor chip on a substrate which, in a simple and cost-effective way, permit accurate alignment of individual chips on a substrate to be ensured.

Abstract: A self test circuit provides a general statement about the condition of a coupled memory which indicates whether a wanted or unwanted manipulation or alteration of the memory has occurred. The contents of the memory are not derivable from the general statement. The general statement is preferably a "fail" or "pass" statement stating whether a deviation in the contents of the memory with respect to a last executed test has been detected or not. The testing of a non-volatile memory is executed by generating a signature from the contents of the non-volatile memory and comparing the generated signature with a reference value of the signature. When the comparison of the generated signature with the reference value indicates a different, a signal is issued and access to the non-volatile memory is restricted and/or a failure procedure is started. Access to the non-volatile memory is allowed when the comparison signature with the reference value indicates no difference.

Abstract: The present invention provides for improved testing of an integrated circuit. In order to measure a test signal S from the integrated circuit 1 a multi-pattern is placed in a shift register. The multi-pattern is generated by overlaying at least two test patterns Ax and Bx. Therefore the signal S changes its state in response to only a small amount of shift operations.

Abstract: A method of testing chips having each a plurality of contact pads, the chips are arranged on a semiconductor wafer or on a printed circuit and are tested with a test system having a test head provided with a plurality of probes, the method comprising the steps of: a) moving the test head and the chips towards each other by a distance which is smaller than a predefined maximum length; b) determining the presence of a contact between the probes and the contact pads by performing an electrical test via the probes to yield a predetermined electrical result; and c) repeating steps a) and b) until the electrical test no longer yields the predetermined electrical result or until the predefined maximum length is reached. The invention also provides for a test system for carrying out the inventive method.