Abstract: A flip-chip package substrate and a method for fabricating the same are provided. An insulation layer is formed on two opposing sides of a middle layer to form a composite core structure and increase the rigidity of the flip-chip package substrate. Therefore, the core structure can be made thinner. The conductive structures can also have a smaller end size, and more conductive points can be disposed within a unit area. Therefore, a circuit structure can be produced that have a fine line pitch and a high wiring density, satisfy the packaging demands of highly integrated circuit/large size substrate, and avoid an electronic package from being warpage.

Abstract: A semiconductor package substrate, a method for fabricating the same, and an electronic package having the same are provided. The method includes: providing a circuit structure having a first solder pad and a second solder pad; forming on the circuit structure a metal sheet having a first hole, from which the first solder pad is exposed, and a second hole, from which the second solder pad is exposed; and forming an insulation layer on the metal sheet and a hole wall of the second hole. A first conductive element that is to be grounded is disposed in the first hole and is in contact with the metal sheet and the first solder pad. Therefore, heat generated in a signal transmission process is dissipated by the metal sheet and the first conductive element.

Abstract: A semiconductor package carrier board, a method for fabricating the same, and an electronic package having the same are provided. The method includes forming on a circuit structure a graphene layer that acts as an insulation heat dissipating layer. Since the heat conductivity of the graphene layer is far greater than the heat conductivity of ink (about 0.4 W/m·k), which is used as solder resist, the heat of the semiconductor package carrier board can be conducted quickly, and thus can avoid the problem that the heat will be accumulated on the semiconductor package carrier board.

Abstract: This disclosure provides a package substrate fabrication method including: providing a carrier; forming a first dielectric layer on the carrier while enabling the first dielectric layer to be patterned including an opening; forming a first conducting unit on the carrier while enabling the first conducting unit to fill up the opening, a height of the first conducting unit at the opening larger than a thickness of the first dielectric layer, and a width of the first conducting unit larger than a width of the opening; forming a second dielectric layer on the first conducting unit; forming a second conducting unit on the second dielectric layer; forming a third dielectric layer on the second conducting unit; removing the carrier and the first dielectric layer while enabling the part of the first conducting unit in the opening to be removed; and forming a fourth dielectric layer to cover the first conducting unit.

Abstract: A semiconductor packaging substrate and a method for fabricating the same are provided. The method includes forming a solder resist structure having a hole on a circuit structure, with a portion of the circuit structure exposed from the hole, and forming a cup-shaped solder stand on the exposed circuit layer and a hole wall of the hole. During a packaging process, the design of the solder stand increases a contact area of a solder tin ball with a metal material. Therefore, a bonding force between the solder tin ball and the solder stand is increased, and the solder tin ball can be protected from being broken or fell off. An electronic package having the semiconductor packaging substrate and a method for fabricating the electronic package are also provided.

Abstract: This disclosure provides a package substrate fabrication method including: providing a carrier; forming a first dielectric layer on the carrier while enabling the first dielectric layer to be patterned including an opening; forming a first conducting unit on the carrier while enabling the first conducting unit to fill up the opening, a height of the first conducting unit at the opening larger than a thickness of the first dielectric layer, and a width of the first conducting unit larger than a width of the opening; forming a second dielectric layer on the first conducting unit; forming a second conducting unit on the second dielectric layer; forming a third dielectric layer on the second conducting unit; removing the carrier and the first dielectric layer while enabling the part of the first conducting unit in the opening to be removed; and forming a fourth dielectric layer to cover the first conducting unit.

Abstract: A flip-chip package substrate and a method for preparing the same in accordance with the present disclosure includes stacking a reinforcement layer on two opposing sides of a core layer in order to increase the rigidity of the flip-chip package substrate, and promoting a thin core layer, wherein the sizes of the end faces of conductive portions can be minimized according to needs. This increases the number of electrical contacts possible in a unit area and enables the creation of finer line pitch and higher layout density of the circuit portions, thereby satisfying the need for packaging of high integration/large scale chips while preventing warpage from occurring in the electronic packages.

Abstract: The invention provides an interposer substrate and a method of fabricating the same. The method includes: etching a carrier to form a recessed groove thereon; filling a dielectric material in the recessed groove to form a first dielectric material layer, or forming a patterned first dielectric material layer on the carrier; forming a first wiring layer, a first conductive block and a second dielectric material layer on the carrier and the first dielectric material layer sequentially, with the first wiring layer and the first conductive block embedded in the second dielectric material layer; and forming a second wiring layer and a second conductive block on the second dielectric material layer. A coreless interposer substrate having fine pitches is thus fabricated.

Abstract: A flip-chip packaging substrate and a method for fabricating the same are disclosed. The method includes stacking a plurality of insulating layers having conductive posts in a manner that the conductive posts are stacked on and in contact with one another. The insulating layers and the conductive posts serve as a core layer structure of the flip-chip packaging substrate. As such, the conductive posts having small-sized end surfaces can be fabricated according to the practical need. Therefore, when the thickness of the core layer structure is increased, the present disclosure not only increases the rigidity of the flip-chip packaging substrate so as to avoid warping, but also ensures the design flexibility of the small-sized end surfaces of the conductive posts, allowing high-density electrical connection points and fine-pitch and high-density circuit layers to be fabricated on the core layer structure.

Abstract: This disclosure provides a package substrate and its fabrication method. The package substrate comprises: a first dielectric material layer have an opening; a first conductive unit including a first part in the opening of the first dielectric material layer and a second part on the first dielectric material layer; and a second dielectric material layer covering the first conductive unit and the first dielectric material layer; wherein a height of the first conductive unit is larger than a thickness of the first dielectric material layer; wherein a cross-section of the second part is larger than that of the first part in the first conductive unit.

Abstract: A manufacturing method of a package substrate includes forming a patterned first dielectric layer on a carrier; forming a first wiring layer on a first surface of the first dielectric layer facing away from the carrier, a wall surface facing one of the openings of the first dielectric layer, and the carrier in one of the openings; forming a first conductive pillar layer on the first wiring layer on the first surface; forming a second dielectric layer on the first surface, the first wiring layer, and the openings, wherein the first conductive pillar layer is exposed from the second dielectric layer; forming a second wiring layer on the exposed first conductive pillar layer and the second dielectric layer; forming an electrical pad layer on the second wiring layer; and forming a third dielectric layer on the second dielectric layer and the second wiring layer.

Abstract: The invention provides an interposer substrate and a method of fabricating the same. The method includes: etching a carrier to form a recessed groove thereon; filling a dielectric material in the recessed groove to form a first dielectric material layer, or forming a patterned first dielectric material layer on the carrier; forming a first wiring layer, a first conductive block and a second dielectric material layer on the carrier and the first dielectric material layer sequentially, with the first wiring layer and the first conductive block embedded in the second dielectric material layer; and forming a second wiring layer and a second conductive block on the second dielectric material layer. A coreless interposer substrate having fine pitches is thus fabricated.

Abstract: A manufacturing method of a package substrate includes forming a patterned first dielectric layer on a carrier; forming a first wiring layer on a first surface of the first dielectric layer facing away from the carrier, a wall surface facing one of the openings of the first dielectric layer, and the carrier in one of the openings; forming a first conductive pillar layer on the first wiring layer on the first surface; forming a second dielectric layer on the first surface, the first wiring layer, and the openings, wherein the first conductive pillar layer is exposed from the second dielectric layer; forming a second wiring layer on the exposed first conductive pillar layer and the second dielectric layer; forming an electrical pad layer on the second wiring layer; and forming a third dielectric layer on the second dielectric layer and the second wiring layer.

Abstract: The invention provides an interposer substrate and a method of fabricating the same. The method includes: etching a carrier to form a recessed groove thereon; filling a dielectric material in the recessed groove to form a first dielectric material layer, or forming a patterned first dielectric material layer on the carrier; forming a first wiring layer, a first conductive block and a second dielectric material layer on the carrier and the first dielectric material layer sequentially, with the first wiring layer and the first conductive block embedded in the second dielectric material layer; and forming a second wiring layer and a second conductive block on the second dielectric material layer. A coreless interposer substrate having fine pitches is thus fabricated.

Abstract: A packaging substrate includes a first dielectric layer, a first wiring layer, a first conductive pillar layer, a second dielectric layer, a second wiring layer, an electrical pad layer, and a third dielectric layer. The first dielectric layer has a first surface, a second surface opposite to the first surface, plural openings, and a wall surface that faces at least one of the openings. The first wiring layer is located on the first surface and the wall surface. A portion of the first wiring layer on an edge of the wall surface adjacent to the second surface extends in a direction away from the wall surface. The first conductive pillar layer is located on a portion of the first wiring layer. The second dielectric layer is located on the first surface, the first wiring layer, and in the openings.

Abstract: A method of fabricating an interposer substrate provides a carrier having a first wiring layer. The first wiring layer has a plurality of first conductive pillars. A first insulating layer is formed on the carrier. The first conductive pillars are exposed from the first insulating layer. External connection pillars are formed above the first conductive pillars and electrically connected to the first conductive pillars. Then the carrier is removed. The process of fabricating the via can be bypassed in the process by forming a coreless interposer substrate on the carrier, such that the overall cost of the process can be decreased, and the process is simple. The interposer substrate is also provided.

Abstract: This disclosure provides a package substrate which includes a rigid dielectric material layer, a first wiring layer having at least one first metal wire formed on the rigid dielectric material layer, and a first flexible dielectric material layer formed on the first wiring layer.

Abstract: A package structure includes: a first dielectric layer having a first surface and a second surface opposing the first surface; a semiconductor chip embedded in the first dielectric layer in a manner that the semiconductor chip protrudes from the second surface, and having an active surface and an inactive surface opposing the active surface, electrode pads being disposed on the active surface and in the first dielectric layer, the inactive surface and a part of a side surface adjacent the inactive surface protruding from the second surface; a first circuit layer disposed on the first surface; a built-up structure disposed on the first surface and the first circuit layer; and an insulating protective layer disposed on the built-up structure, a plurality of cavities being formed in the insulating protective layer for exposing a part of a surface of the built-up structure. The package structure includes only one built-up structure.

Abstract: A substrate structure and a manufacturing method thereof are provided. The substrate structure comprises a dielectric material layer, a first conductive wiring layer, a second conductive wiring layer, a first conductive pillar layer, and a second conductive pillar layer. The first conductive wiring layer is disposed inside the dielectric material layer. The first conductive pillar layer having a first conductive pillar is disposed inside the dielectric material layer and between the first conductive wiring layer and the second conductive wiring layer. The second conductive pillar layer having a second conductive pillar is disposed on the second conductive wiring layer. The first conductive wiring layer and the second conductive wiring layer are electrically connected by the first conductive pillar layer. The second conductive pillar is a -shape conductive pillar, a -shape conductive pillar, or a -shape conductive pillar.

Abstract: This disclosure provides a package substrate fabrication method including: providing a carrier; forming a first dielectric layer on the carrier while enabling the first dielectric layer to be patterned including an opening; forming a first conducting unit on the carrier while enabling the first conducting unit to fill up the opening, a height of the first conducting unit at the opening larger than a thickness of the first dielectric layer, and a width of the first conducting unit larger than a width of the opening; forming a second dielectric layer on the first conducting unit; forming a second conducting unit on the second dielectric layer; forming a third dielectric layer on the second conducting unit; removing the carrier and the first dielectric layer while enabling the part of the first conducting unit in the opening to be removed; and forming a fourth dielectric layer to cover the first conducting unit.