Patents by Inventor Paul Janis Timans
Paul Janis Timans has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10190915Abstract: A method and system for calibrating temperature measurement devices, such as pyrometers, in thermal processing chambers are disclosed. According to the present invention, the system includes a calibrating light source that emits light energy onto a substrate contained in the thermal processing chamber. A light detector then detects the amount of light that is being transmitted through the substrate. The amount of detected light energy is then used to calibrate a temperature measurement device that is used in the system.Type: GrantFiled: December 11, 2014Date of Patent: January 29, 2019Assignee: Mattson Technology, Inc.Inventor: Paul Janis Timans
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Publication number: 20150092813Abstract: A method and system for calibrating temperature measurement devices, such as pyrometers, in thermal processing chambers are disclosed. According to the present invention, the system includes a calibrating light source that emits light energy onto a substrate contained in the thermal processing chamber. A light detector then detects the amount of light that is being transmitted through the substrate. The amount of detected light energy is then used to calibrate a temperature measurement device that is used in the system.Type: ApplicationFiled: December 11, 2014Publication date: April 2, 2015Inventor: Paul Janis Timans
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Patent number: 8918303Abstract: A method and system for calibrating temperature measurement devices, such as pyrometers, in thermal processing chambers are disclosed. According to the present invention, the system includes a calibrating light source that emits light energy onto a substrate contained in the thermal processing chamber. A light detector then detects the amount of light that is being transmitted through the substrate. The amount of detected light energy is then used to calibrate a temperature measurement device that is used in the system.Type: GrantFiled: September 24, 2012Date of Patent: December 23, 2014Assignee: Mattson Technology, Inc.Inventor: Paul Janis Timans
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Publication number: 20140246422Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.Type: ApplicationFiled: March 5, 2014Publication date: September 4, 2014Applicant: MATTSON TECHNOLOGY, INC.Inventors: ZION KOREN, CONNOR PATRICK O'CARROLL, SHUEN CHUN CHOY, PAUL JANIS TIMANS, RUDY SANTO TOMAS CARDEMA, JAMES TSUNEO TAOKA, ARIETH A. STROD
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Patent number: 8696197Abstract: A method and system are disclosed for determining at least one optical characteristic of a substrate, such as a semiconductor wafer. Once the optical characteristic is determined, at least one parameter in a processing chamber may be controlled for improving the process. For example, in one embodiment, the reflectivity of one surface of the substrate may first be determined at or near ambient temperature. From this information, the reflectance and/or emittance of the wafer during high temperature processing may be accurately estimated. The emittance can be used to correct temperature measurements using a pyrometer during wafer processing. In addition to making more accurate temperature measurements, the optical characteristics of the substrate can also be used to better optimize the heating cycle.Type: GrantFiled: March 9, 2012Date of Patent: April 15, 2014Assignee: Mattson Technology, Inc.Inventor: Paul Janis Timans
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Patent number: 8668383Abstract: Methods and apparatus for wafer temperature measurement and calibration of temperature measurement devices may be based on determining the absorption of a layer in a semiconductor wafer. The absorption may be determined by directing light towards the wafer and measuring light reflected from the wafer from below the surface upon which the incident light impinges. Calibration wafers and measurement systems may be arranged and configured so that light reflected at predetermined angles to the wafer surface is measured and other light is not. Measurements may also be based on evaluating the degree of contrast in an image of a pattern in or on the wafer. Other measurements may utilize a determination of an optical path length within the wafer alongside a temperature determination based on reflected or transmitted light.Type: GrantFiled: April 16, 2012Date of Patent: March 11, 2014Assignee: Mattson Technology, Inc.Inventor: Paul Janis Timans
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Patent number: 8669496Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.Type: GrantFiled: June 15, 2012Date of Patent: March 11, 2014Assignee: Mattson Technology, Inc.Inventor: Paul Janis Timans
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Patent number: 8575521Abstract: Temperature control in an RTP system can be improved by consideration of one or more witness structures different from the wafer (or other semiconductor object) being processed. For example, power coupling between the RTP heating system and witness structure can be used to adjust one or more control parameters, such as model definitions, that are used by the RTP system to control wafer heating. As another example, a stored trajectory of a desired witness structure temperature or other property can be used as a basis for control during a processing cycle. Thus, the witness structure may be controlled “closed-loop” while the wafer is heated “open-loop.” As a further example, a heat flux between the RTP heating system and witness structure can be used to determine radiant energy from the heating system that is incident on the witness structure. One or more control actions can be taken based on this incident energy.Type: GrantFiled: April 1, 2008Date of Patent: November 5, 2013Assignee: Mattson Technology, Inc.Inventors: Zsolt Nenyei, Paul Janis Timans
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Publication number: 20120298039Abstract: Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.Type: ApplicationFiled: August 6, 2012Publication date: November 29, 2012Applicant: MATTSON TECHNOLOGY, INC.Inventors: Bruce W. PEUSE, Yaozhi HU, Paul Janis TIMANS, Guangcai XING, Wilfried LERCH, Sing-Pin TAY, Stephen E. SAVAS, Georg ROTERS, Zsolt NENYEI, Ashok SINHA
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Patent number: 8296091Abstract: A method and system for calibrating temperature measurement devices, such as pyrometers, in thermal processing chambers are disclosed. According to the present invention, the system includes a calibrating light source that emits light energy onto a substrate contained in the thermal processing chamber. A light detector then detects the amount of light that is being transmitted through the substrate. The amount of detected light energy is then used to calibrate a temperature measurement device that is used in the system.Type: GrantFiled: May 17, 2011Date of Patent: October 23, 2012Assignee: Mattson Technology, Inc.Inventor: Paul Janis Timans
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Publication number: 20120252229Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.Type: ApplicationFiled: June 15, 2012Publication date: October 4, 2012Applicant: MATTSON TECHNOLOGY, INC.Inventor: Paul Janis Timans
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Publication number: 20120231558Abstract: A method and system are disclosed for determining at least one optical characteristic of a substrate, such as a semiconductor wafer. Once the optical characteristic is determined, at least one parameter in a processing chamber may be controlled for improving the process. For example, in one embodiment, the reflectivity of one surface of the substrate may first be determined at or near ambient temperature. From this information, the reflectance and/or emittance of the wafer during high temperature processing may be accurately estimated. The emittance can be used to correct temperature measurements using a pyrometer during wafer processing. In addition to making more accurate temperature measurements, the optical characteristics of the substrate can also be used to better optimize the heating cycle.Type: ApplicationFiled: March 9, 2012Publication date: September 13, 2012Applicant: Mattson Technology, IncInventor: Paul Janis Timans
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Publication number: 20120201271Abstract: Methods and apparatus for wafer temperature measurement and calibration of temperature measurement devices may be based on determining the absorption of a layer in a semiconductor wafer. The absorption may be determined by directing light towards the wafer and measuring light reflected from the wafer from below the surface upon which the incident light impinges. Calibration wafers and measurement systems may be arranged and configured so that light reflected at predetermined angles to the wafer surface is measured and other light is not. Measurements may also be based on evaluating the degree of contrast in an image of a pattern in or on the wafer. Other measurements may utilize a determination of an optical path length within the wafer alongside a temperature determination based on reflected or transmitted light.Type: ApplicationFiled: April 16, 2012Publication date: August 9, 2012Applicant: MATTSON TECHNOLOGY, INC.Inventor: Paul Janis Timans
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Patent number: 8236706Abstract: Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.Type: GrantFiled: December 12, 2008Date of Patent: August 7, 2012Assignee: Mattson Technology, Inc.Inventors: Bruce W. Peuse, Yaozhi Hu, Paul Janis Timans, Guangcai Xing, Wilfried Lerch, Sing-Pin Tay, Stephen E. Savas, Georg Roters, Zsolt Nenyei, Ashok Sinha
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Patent number: 8222570Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.Type: GrantFiled: November 13, 2008Date of Patent: July 17, 2012Assignee: Mattson Technology, Inc.Inventor: Paul Janis Timans
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Patent number: 8157439Abstract: Methods and apparatus for wafer temperature measurement and calibration of temperature measurement devices may be based on determining the absorption of a layer in a semiconductor wafer. The absorption may be determined by directing light towards the wafer and measuring light reflected from the wafer from below the surface upon which the incident light impinges. Calibration wafers and measurement systems may be arranged and configured so that light reflected at predetermined angles to the wafer surface is measured and other light is not. Measurements may also be based on evaluating the degree of contrast in an image of a pattern in or on the wafer. Other measurements may utilize a determination of an optical path length within the wafer alongside a temperature determination based on reflected or transmitted light.Type: GrantFiled: June 8, 2009Date of Patent: April 17, 2012Assignee: Mattson Technology, Inc.Inventor: Paul Janis Timans
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Patent number: 8152365Abstract: A method and system are disclosed for determining at least one optical characteristic of a substrate, such as a semiconductor wafer. Once the optical characteristic is determined, at least one parameter in a processing chamber may be controlled for improving the process. For example, in one embodiment, the reflectivity of one surface of the substrate may first be determined at or near ambient temperature. From this information, the reflectance and/or emittance of the wafer during high temperature processing may be accurately estimated. The emittance can be used to correct temperature measurements using a pyrometer during wafer processing. In addition to making more accurate temperature measurements, the optical characteristics of the substrate can also be used to better optimize the heating cycle.Type: GrantFiled: June 29, 2006Date of Patent: April 10, 2012Assignee: Mattson Technology, Inc.Inventor: Paul Janis Timans
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Publication number: 20110222840Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.Type: ApplicationFiled: May 20, 2011Publication date: September 15, 2011Inventors: Zion Koren, Conor Patrick O' Carroll, Shuen Chun Choy, Paul Janis Timans, Rudy Santo Tomas Cardema, James Tsuneo Taoka, Arieh A. Strod
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Publication number: 20110216803Abstract: A method and system for calibrating temperature measurement devices, such as pyrometers, in thermal processing chambers are disclosed. According to the present invention, the system includes a calibrating light source that emits light energy onto a substrate contained in the thermal processing chamber. A light detector then detects the amount of light that is being transmitted through the substrate. The amount of detected light energy is then used to calibrate a temperature measurement device that is used in the system.Type: ApplicationFiled: May 17, 2011Publication date: September 8, 2011Applicant: MATTSON TECHNOLOGY, INC.Inventor: Paul Janis Timans
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Patent number: 7976216Abstract: The temperature of an object such as a semiconductor wafer that includes silicon can be determined based on the variation of the optical absorption coefficient of silicon with temperature. Temperatures above about 850° C., can be found by measuring phenomena that are affected by the magnitude of the optical absorption coefficient, especially at wavelengths >˜1 ?m. Phenomena could include measuring light reflected, transmitted, emitted, absorbed, or scattered by the wafer and deriving the absorption coefficient from the measurements and then deriving temperature from the absorption coefficient. Temperature could be determined from a model relating phenomena directly to temperature, the model constructed based on absorption behavior and techniques discussed herein. The resulting temperature could be used to calibrate or control a rapid thermal processing chamber or other apparatus.Type: GrantFiled: December 20, 2007Date of Patent: July 12, 2011Assignee: Mattson Technology, Inc.Inventor: Paul Janis Timans