Abstract: Batteries and methods of forming the same include an anode structure, a cathode structure, and a conductive overcoat. The anode structure includes an anode substrate, an anode formed on the anode substrate, and an anode conductive liner that is in contact with the anode. The cathode structure includes a cathode substrate, a cathode formed on the cathode substrate, and a cathode conductive liner that is in contact with the cathode. The conductive overcoat is formed over the anode structure and the cathode structure to seal a cavity formed by the anode structure and the cathode structure. At least one of the anode substrate and the cathode substrate is pierced by through vias that are in contact with the respective anode conductive liner or cathode conductive liner.

Abstract: An electro-optical module assembly is provided that includes a flexible substrate having a first surface and a second surface opposite the first surface, wherein the flexible substrate contains an opening located therein that extends from the first surface to the second surface. An optical component is located on the second surface of the flexible substrate and is positioned to have a surface exposed by the opening. At least one electronic component is located on a first portion of the first surface of the flexible substrate, and at least one micro-energy source is located on a second portion of the first surface of the flexible substrate.

Abstract: In one example, a battery includes a negative terminal, a positive terminal, an electrolyte contained between the negative terminal and the positive terminal, and a hydrogel layer positioned between and physically separating the negative terminal and the positive terminal.

Abstract: A bonded structure contains a substrate containing at least one feature, the substrate having a top surface; a first release layer overlying the top surface of the substrate, the first release layer being absorptive of light having a first wavelength for being decomposed by the light; an adhesive layer overlying the first release layer, and a second release layer overlying the adhesive layer. The second release layer is absorptive of light having a second wavelength for being decomposed by the light having the second wavelength. The bonded structure further contains a handle substrate that overlies the second release layer, where the handle substrate is substantially transparent to the light having the first wavelength and the second wavelength. Also disclosed is a debonding method to process the bonded structure to remove and reclaim the adhesive layer for re-use. In another embodiment a multi-step method optically cuts and debonds a bonded structure.

Abstract: After forming a first electromagnetic radiation blocking layer over a front side of a device wafer, the device wafer is bonded to a handle substrate from the front side. A semiconductor substrate in the device wafer is thinned from its backside. Trenches are formed extending through the device wafer and the first electromagnetic radiation blocking layer such that the device wafer is singulated into semiconductor dies. A second electromagnetic radiation blocking layer portion is formed on a backside surface of and sidewalls surfaces of each of the semiconductor dies such that each of the semiconductor dies are fully encapsulated by the first and second electromagnetic radiation blocking layer portions.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The the at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: Embodiments include methods and products for evaluating microbatteries. The microbattery includes a cathode layer, an anode layer physically separated from the cathode layer, and an electrolyte layer in contact with the anode and the cathode. The microbattery also includes at least one auxiliary electrode in physical contact with the electrolyte layer, the auxiliary electrode containing at least one metal coating and at least one non-conductive film, wherein the at least one metal coating is physically separated from the cathode and the anode.

Abstract: An electrical device that includes at least two active wafers having at least one through silicon via, and at least one unitary electrical communication and spacer structure present between a set of adjacently stacked active wafers of the at least two active wafers. The unitary electrical communication and spacer structure including an electrically conductive material core providing electrical communication to the at least one through silicon via structure in the set of adjacently stacked active wafers and a substrate material outer layer. The at least one unitary electrical communication and spacer structure being separate from and engaged to the adjacently stacked active wafers, wherein coolant passages are defined between surfaces of the adjacently stacked active wafers and the at least one unitary electrical communication and spacer structure.

Abstract: Aspects include a method of manufacturing a flexible electronic structure that includes a metal or doped silicon substrate. Aspects include depositing an adhesive layer on the top side of the structure. Aspects also include depositing a release layer and a glass layer on the top side of the structure. Aspects also include reducing a thickness of the silicon substrate on the bottom side of the structure.

Abstract: A bonded structure contains a substrate containing at least one feature, the substrate having a top surface; a first release layer overlying the top surface of the substrate, the first release layer being absorptive of light having a first wavelength for being decomposed by the light; an adhesive layer overlying the first release layer, and a second release layer overlying the adhesive layer. The second release layer is absorptive of light having a second wavelength for being decomposed by the light having the second wavelength. The bonded structure further contains a handle substrate that overlies the second release layer, where the handle substrate is substantially transparent to the light having the first wavelength and the second wavelength. Also disclosed is a debonding method to process the bonded structure to remove and reclaim the adhesive layer for re-use. In another embodiment a multi-step method optically cuts and debonds a bonded structure.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: A bonded structure contains a substrate containing at least one feature, the substrate having a top surface; a first release layer overlying the top surface of the substrate, the first release layer being absorptive of light having a first wavelength for being decomposed by the light; an adhesive layer overlying the first release layer, and a second release layer overlying the adhesive layer. The second release layer is absorptive of light having a second wavelength for being decomposed by the light having the second wavelength. The bonded structure further contains a handle substrate that overlies the second release layer, where the handle substrate is substantially transparent to the light having the first wavelength and the second wavelength. Also disclosed is a debonding method to process the bonded structure to remove and reclaim the adhesive layer for re-use. In another embodiment a multi-step method optically cuts and debonds a bonded structure.

Abstract: A battery, comprising a cathode comprising a cathode material in contact with a cathode current collector. The battery also comprises an electrolyte. The battery also comprises an anode comprising an electroplated homogeneous solid metallic alloy comprising 100 ppm to 1000 ppm Bi and 100 ppm to 1000 ppm In, and a remainder Zn.

Abstract: An electrical device that includes at least two active wafers having at least one through silicon via, and at least one unitary electrical communication and spacer structure present between a set of adjacently stacked active wafers of the at least two active wafers. The unitary electrical communication and spacer structure including an electrically conductive material core providing electrical communication to the at least one through silicon via structure in the set of adjacently stacked active wafers and a substrate material outer layer. The at least one unitary electrical communication and spacer structure being separate from and engaged to the adjacently stacked active wafers, wherein coolant passages are defined between surfaces of the adjacently stacked active wafers and the at least one unitary electrical communication and spacer structure.

Abstract: Embodiments include methods and products for evaluating microbatteries. The microbattery includes a cathode layer, an anode layer physically separated from the cathode layer, and an electrolyte layer in contact with the anode and the cathode. The microbattery also includes at least one auxiliary electrode in physical contact with the electrolyte layer, the auxiliary electrode containing at least one metal coating and at least one non-conductive film, wherein the at least one metal coating is physically separated from the cathode and the anode.

Abstract: After forming a first electromagnetic radiation blocking layer over a front side of a device wafer, the device wafer is bonded to a handle substrate from the front side. A semiconductor substrate in the device wafer is thinned from its backside. Trenches are formed extending through the device wafer and the first electromagnetic radiation blocking layer such that the device wafer is singulated into semiconductor dies. A second electromagnetic radiation blocking layer portion is formed on a backside surface of and sidewalls surfaces of each of the semiconductor dies such that each of the semiconductor dies are fully encapsulated by the first and second electromagnetic radiation blocking layer portions.

Abstract: A battery comprising an anode comprising anode material in contact with a metal anode current collector. The battery further comprises a cathode comprising cathode material in contact with a cathode current collector comprising a transparent conducting oxide (TCO). The battery further comprises an electrolyte with a pH in a range of 3 to 7.

Abstract: A battery, comprising a cathode comprising a cathode material in contact with a cathode current collector. The battery also comprises an electrolyte. The battery also comprises an anode comprising an electroplated homogeneous solid metallic alloy comprising 100 ppm to 1000 ppm Bi and 100 ppm to 1000 ppm In, and a remainder Zn.

Abstract: A method of forming a flexible microbattery and battery is provided. The method including: forming a film with a cavity therein; applying a first outer flexible substrate to a first side of the film; applying a second outer flexible substrate to a second opposite side of the film, wherein a cathode, an anode, a separator and an electrolyte are located within the cavity and the film provides a first seal about the cathode, the anode, the separator and the electrolyte and wherein the first seal extends between the first outer flexible substrate and the second outer flexible substrate; cutting a trench through the first outer flexible substrate, the film and the second outer flexible substrate after the first seal is formed; disposing a curable material in the trench; curing the curable material to provide a second seal, wherein the first seal is located between the cavity and the second seal.