Abstract: A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region, source regions having the first conductivity type formed in the well region adjacent the active trench, and a first termination trench extending below the well region and disposed at an outer edge of an active region of the device. The sidewalls and bottom of the active trench are lined with dielectric material, and substantially filled with a first conductive layer forming an upper electrode and a second conductive layer forming a lower electrode, the upper electrode being disposed above the lower electrode and separated therefrom by inter-electrode dielectric material.

Abstract: Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented.

Abstract: In accordance with an embodiment of the present invention, a MOSFET includes at least two insulation-filled trench regions laterally spaced in a first semiconductor region to form a drift region therebetween, and at least one resistive element located along an outer periphery of each of the two insulation-filled trench regions. A ratio of a width of each of the insulation-filled trench regions to a width of the drift region is adjusted so that an output capacitance of the MOSFET is minimized.

Abstract: A MOSFET device for RF applications that uses a trench gate in place of the lateral gate used in lateral MOSFET devices is described. The trench gate in the devices of the invention is provided with a single, short channel for high frequency gain. The device of the invention is also provided with an asymmetric oxide in the trench gate, as well as LDD regions that lower the gate-drain capacitance for improved RF performance. Such features allow these devices to maintain the advantages of the LDMOS structure (better linearity), thereby increasing the RF power gain. The trench gate LDMOS of the invention also reduces the hot carrier effects when compared to regular LDMOS devices by reducing the peak electric field and impact ionization. Thus, the devices of the invention will have a better breakdown capability.

Abstract: In accordance with an embodiment of the present invention, a MOSFET includes at least two insulation-filled trench regions laterally spaced in a first semiconductor region to form a drift region therebetween, and at least one resistive element located along an outer periphery of each of the two insulation-filled trench regions. A ratio of a width of each of the insulation-filled trench regions to a width of the drift region is adjusted so that an output capacitance of the MOSFET is minimized.

Abstract: A MOSFET device for RF applications that uses a trench gate in place of the lateral gate used in lateral MOSFET devices is described. The trench gate in the devices of the invention is provided with a single, short channel for high frequency gain. The device of the invention is also provided with an asymmetric oxide in the trench gate, as well as LDD regions that lower the gate-drain capacitance for improved RF performance. Such features allow these devices to maintain the advantages of the LDMOS structure (better linearity), thereby increasing the RF power gain. The trench gate LDMOS of the invention also reduces the hot carrier effects when compared to regular LDMOS devices by reducing the peak electric field and impact ionization. Thus, the devices of the invention will have a better breakdown capability.

Abstract: In accordance with an embodiment of the present invention, a MOSFET includes at least two insulation-filled trench regions laterally spaced in a first semiconductor region to form a drift region therebetween, and at least one resistive element located along an outer periphery of each of the two insulation-filled trench regions. A ratio of a width of each of the insulation-filled trench regions to a width of the drift region is adjusted so that an output capacitance of the MOSFET is minimized.

Abstract: A support for an electric heating element comprises a former of generally cylindrical shape, made of a heat resisting material and having a longitudinal core from which extend spaced ribs that support an outer wall. Portions of the outer wall and of the ribs are omitted along a helical path around the core to provide a mount for an electric heating element. A heating element assembly including the support and the heating element is mounted in a hot air gun.

Abstract: A Hot Air Gun capable of stripping paint comprising a casing made of a pair of clam-shell members, an electric motor, a fan drivingly connected to the electric motor, heating means comprising a former and a helical heating element projecting outside the casing and defining an air outlet at its ends, and an outer tubular member surrounding the projecting part of the inner tubular member. The inner and outer tubular members are clamped in position by the securing together of the pair of clam-shell members of the casing. Baffle means are provided at the upstream end of the helical heating element for blocking an air flow path inside the element. The exposed surface of the outer tubular member is covered with a plurality of circumferential ribs.

Abstract: A hot air gun having a hot air outlet is provided with a guard plate having a substantially straight edge transverse to the general direction of the hot air flow. This straight edge is downstream of the hot air outlet and defines the downstream extremity of the guard plate, the latter defining the boundary on one side of the hot air flow from the outlet. Preferably the guard plate has a flared flat part and a tubular part, the latter being detachably and rotatably mounted around the outlet. The guard plate is advantageously used when stripping paint adjacent a glass pane to minimize heating of the glass.

Abstract: A hand-held power tool or a hand controlled implement having a primary control system by which a user controls operation of the tool or implement also has a secondary control system of pneumatic form. Operation of both systems must take place before the tool or implement is energized. A tool with primary and secondary handles has an actuator for the primary system on the primary handle and an actuator for the secondary system on the secondary handle. An implement with a single handle has the actuators mounted at different locations on the single handle that are spaced apart by a distance preventing operation thereof by the same hand of a user.

Abstract: A gas mixture, having a more readily adsorbable gas component to be recovered and a less readily adsorbable gas component, is introduced to an adsorption zone at low pressure, with the pressure being increased prior to purging the less readily adsorbable gas component from the adsorption zone at high pressure. Upon depressurization, the readily adsorbable gas component is recovered at enhanced purity levels. In multiple adsorption zone operations, each zone is passed through the low pressure adsorption, pressurization, high pressure purging and depressurization cycle, in sequence, with pressure equalization steps advantageously being employed between the zones to be pressurized following adsorption and those being depressurized following purging. The invention can be used to recover nitrogen of enhanced purity from air, and to recover high purity methane from mixtures thereof with nitrogen.