Patents by Inventor Peter H. Wilson
Peter H. Wilson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9551799Abstract: A method for detecting hydrocarbons including obtaining seismic trace data for a region of interest; processing, using a processor, the seismic trace data to calculate a signal spectrum for each of a plurality of locations in the region of interest; calculating a dominant frequency of the signal spectrum; calculating at least one measure of energy decay above the dominant frequency, calculating at least one measure of energy decay below the dominant frequency, and calculating at least one measure spectral shape of the signal spectrum, and locating a hydrocarbon reservoir in the region of interest using the at least one measure of energy decay below the dominant frequency, the at least one measure of energy decay above dominant frequency and the dominant frequency; or locating a hydrocarbon reservoir in the region of interest using the at least one measure of energy decay below the dominant frequency and the at least one measure of energy decay above dominant frequency; or and locating a hydrocarbon reservoirType: GrantFiled: October 12, 2011Date of Patent: January 24, 2017Assignee: Apex Spectral Technology, Inc.Inventors: Robert W. Wiley, Scott W. Peters, Peter H. Wilson
-
Patent number: 8936985Abstract: A method can include forming a drift region, forming a well region above the drift region, and forming an active trench extending through the well region and into the drift region. The method can include forming a first source region in contact with a first sidewall of the active trench and a second source region in contact with a second sidewall of the active trench. The method also includes forming a charge control trench where the charge control trench is aligned parallel to the active trench and laterally separated from the active trench by a mesa region, and where the portion of the well region is in contact with the charge control trench and excludes any source region. The method also includes forming an oxide along a bottom of the active trench having a thickness greater than a thickness of an oxide along the first sidewall of the active trench.Type: GrantFiled: March 12, 2012Date of Patent: January 20, 2015Assignee: Fairchild Semiconductor CorporationInventors: Ashok Challa, Alan Elbanhawy, Dean E. Probst, Steven P. Sapp, Peter H. Wilson, Babak S. Sani, Becky Losee, Robert Herrick, James J. Murphy, Gordon K. Madson, Bruce D. Marchant, Christopher B. Kocon, Debra S. Woolsey
-
Publication number: 20130238247Abstract: A method for detecting hydrocarbons including obtaining seismic trace data for a region of interest; processing, using a processor, the seismic trace data to calculate a signal spectrum for each of a plurality of locations in the region of interest; calculating a dominant frequency of the signal spectrum; calculating at least one measure of energy decay above the dominant frequency, calculating at least one measure of energy decay below the dominant frequency, and calculating at least one measure spectral shape of the signal spectrum, and locating a hydrocarbon reservoir in the region of interest using the at least one measure of energy decay below the dominant frequency, the at least one measure of energy decay above dominant frequency and the dominant frequency; or locating a hydrocarbon reservoir in the region of interest using the at least one measure of energy decay below the dominant frequency and the at least one measure of energy decay above dominant frequency; or and locating a hydrocarbon reservoirType: ApplicationFiled: October 12, 2011Publication date: September 12, 2013Applicant: APEX SPECTRAL TECHNOLOGY, INC.Inventors: Robert W. Wiley, Scott W. Peters, Peter H. Wilson
-
Publication number: 20120248528Abstract: MOSFET devices for RF applications that use a trench-gate in place of the lateral gate conventionally used in lateral MOSFET devices. A trench-gate provides devices with a single, short channel for high frequency gain. Embodiments of the present invention provide devices with an asymmetric oxide in the trench gate, as well as LDD regions that lower the gate-drain capacitance for improved RF performance. Refinements to these TG-LDMOS devices include placing a source-shield conductor below the gate and placing two gates in a trench-gate region. These improve device high-frequency performance by decreasing gate-to-drain capacitance. Further refinements include adding a charge balance region to the LDD region and adding source-to-substrate or drain-to-substrate vias.Type: ApplicationFiled: June 8, 2012Publication date: October 4, 2012Inventors: Peter H. Wilson, Steven Sapp
-
Publication number: 20120220091Abstract: A method for forming thick oxide at the bottom of a trench formed in a semiconductor substrate includes forming a conformal oxide film by a sub-atmospheric chemical vapor deposition process that fills the trench and covers a top surface of the substrate. The method also includes etching the oxide film off the top surface of the substrate and inside the trench to leave a substantially flat layer of oxide having a target thickness at the bottom of the trench.Type: ApplicationFiled: March 12, 2012Publication date: August 30, 2012Inventors: Ashok Challa, Alan Elbanhawy, Thomas E. Grebs, Nathan L. Kraft, Dean E. Probst, Rodney S. Ridley, Steven P. Sapp, Qi Wang, Chongman Yun, J.G. Lee, Peter H. Wilson, Joseph A. Yedinak, J.Y. Jung, H.C. Jang, Babak S. Sani, Richard Stokes, Gary M. Dolny, John Mytych, Becky Losee, Adam Selsley, Robert Herrick, James J. Murphy, Gordon K. Madson, Bruce D. Marchant, Christopher L. Rexer, Christopher B. Kocon, Debra S. Woolsey
-
Patent number: 8198677Abstract: MOSFET devices for RF applications that use a trench-gate in place of the lateral gate conventionally used in lateral MOSFET devices. A trench-gate provides devices with a single, short channel for high frequency gain. Embodiments of the present invention provide devices with an asymmetric oxide in the trench gate, as well as LDD regions that lower the gate-drain capacitance for improved RF performance. Refinements to these TG-LDMOS devices include placing a source-shield conductor below the gate and placing two gates in a trench-gate region. These improve device high-frequency performance by decreasing gate-to-drain capacitance. Further refinements include adding a charge balance region to the LDD region and adding source-to-substrate or drain-to-substrate vias.Type: GrantFiled: July 8, 2009Date of Patent: June 12, 2012Assignee: Fairchild Semiconductor CorporationInventors: Peter H. Wilson, Steven Sapp
-
Patent number: 8143123Abstract: A method for forming power semiconductor devices having an inter-electrode dielectric (IPD) layer inside a trench includes providing a semiconductor substrate with a trench, lining the sidewalls and bottom of the trench with a first layer of dielectric material, filling the trench with a first layer of conductive material to form a first electrode, recessing the first layer of dielectric material and the first layer of conductive material to a first depth inside the trench, forming a layer of polysilicon material on a top surface of the dielectric material and conductive material inside the trench, oxidizing the layer of polysilicon material, and forming a second electrode inside the trench atop the oxidized layer and isolated from trench sidewalls by a second dielectric layer. The oxidation step can be enhanced by either chemically or physically altering the top portion polysilicon such as by implanting impurities.Type: GrantFiled: March 3, 2008Date of Patent: March 27, 2012Assignee: Fairchild Semiconductor CorporationInventors: Thomas E. Grebs, Rodney S. Ridley, Steven P. Sapp, Peter H. Wilson, Babak S. Sani, Gary M. Dolny, John Mytych, Becky Losee, Adam Selsley, Christopher B. Kocon
-
Patent number: 8143124Abstract: A method of manufacturing a semiconductor device having a charge control trench and an active control trench with a thick oxide bottom includes forming a drift region, a well region extending above the drift region, an active trench extending through the well region and into the drift region, a charge control trench extending deeper into the drift region than the active trench, an oxide film that fills the active trench, the charge control trench and covers a top surface of the substrate, an electrode in the active trench, and source regions. The method also includes etching the oxide film off the top surface of the substrate and inside the active trench to leave a substantially flat layer of thick oxide having a target thickness at the bottom of the active trench.Type: GrantFiled: February 15, 2008Date of Patent: March 27, 2012Assignee: Fairchild Semiconductor CorporationInventors: Ashok Challa, Alan Elbanhawy, Dean E. Probst, Steven P. Sapp, Peter H. Wilson, Babak S. Sani, Becky Losee, Robert Herrick, James J. Murphy, Gordon K. Madson, Bruce D. Marchant, Christopher B. Kocon, Debra S. Woolsey
-
Publication number: 20110284955Abstract: In accordance with an embodiment of the present invention, a MOSFET includes a first semiconductor region having a first surface, a first insulation-filled trench region extending from the first surface into the first semiconductor region, and strips of semi-insulating material along the sidewalls of the first insulation-filled trench region. The strips of semi-insulating material may be insulated from the first semiconductor region.Type: ApplicationFiled: May 24, 2011Publication date: November 24, 2011Applicant: Fairchild Semiconductor CorporationInventors: Steven Sapp, Peter H. Wilson
-
Patent number: 7982265Abstract: A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region. The active trench, which includes sidewalls and bottom lined with dielectric material, is substantially filled with a first conductive layer and a second conductive layer. The second conductive layer forms a gate electrode and is disposed above the first conductive layer and is separated from the first conductive layer by an inter-electrode dielectric material. The device also includes source regions having the first conductivity type formed inside the well region and adjacent the active trench and a charge control trench that extends deeper into the drift region than the active trench and is substantially filled with material to allow for vertical charge control in the drift region.Type: GrantFiled: January 22, 2008Date of Patent: July 19, 2011Assignee: Fairchild Semiconductor CorporationInventors: Ashok Challa, Alan Elbanhawy, Steven P. Sapp, Peter H. Wilson, Babak S. Sani, Christopher B. Kocon
-
Patent number: 7977744Abstract: A MOSFET comprises a first semiconductor region having a first surface, a first insulation-filled trench region extending from the first surface into the first semiconductor region, and strips of semi-insulating material along the sidewalls of the first insulation-filled trench region. The strips of semi-insulating material are insulated from the first semiconductor region.Type: GrantFiled: September 27, 2007Date of Patent: July 12, 2011Assignee: Fairchild Semiconductor CorporationInventors: Steven Sapp, Peter H. Wilson
-
Patent number: 7876643Abstract: A method in accordance with one embodiment of the invention includes obtaining seismic trace data for a region of interest; processing the seismic trace data to calculate at least one spectrum for at least one sample from the seismic data; calculating at least one dominant frequency (?D) for the at least one spectrum; calculating at least one measure of energy loss at frequencies above the at least one dominant frequency (?D) on the at least one spectrum; and locating a hydrocarbon reservoir in the region of interest using the at least one dominant frequency (?D) and the at least one measure of energy loss.Type: GrantFiled: September 24, 2007Date of Patent: January 25, 2011Assignee: Apex Spectral Technology, Inc.Inventors: Robert W. Wiley, Scott W. Peters, Peter H. Wilson
-
Publication number: 20090273026Abstract: MOSFET devices for RF applications that use a trench-gate in place of the lateral gate conventionally used in lateral MOSFET devices. A trench-gate provides devices with a single, short channel for high frequency gain. Embodiments of the present invention provide devices with an asymmetric oxide in the trench gate, as well as LDD regions that lower the gate-drain capacitance for improved RF performance. Refinements to these TG-LDMOS devices include placing a source-shield conductor below the gate and placing two gates in a trench-gate region. These improve device high-frequency performance by decreasing gate-to-drain capacitance. Further refinements include adding a charge balance region to the LDD region and adding source-to-substrate or drain-to-substrate vias.Type: ApplicationFiled: July 8, 2009Publication date: November 5, 2009Inventors: PETER H. WILSON, STEVEN SAPP
-
Patent number: 7576388Abstract: MOSFET devices for RF applications that use a trench-gate in place of the lateral gate conventionally used in lateral MOSFET devices. A trench-gate provides devices with a single, short channel for high frequency gain. Embodiments of the present invention provide devices with an asymmetric oxide in the trench gate, as well as LDD regions that lower the gate-drain capacitance for improved RF performance. Refinements to these TG-LDMOS devices include placing a source-shield conductor below the gate and placing two gates in a trench-gate region. These improve device high-frequency performance by decreasing gate-to-drain capacitance. Further refinements include adding a charge balance region to the LDD region and adding source-to-substrate or drain-to-substrate vias.Type: GrantFiled: September 26, 2004Date of Patent: August 18, 2009Assignee: Fairchild Semiconductor CorporationInventors: Peter H. Wilson, Steven Sapp
-
Publication number: 20090080289Abstract: A method in accordance with one embodiment of the invention includes obtaining seismic trace data for a region of interest; processing the seismic trace data to calculate at least one spectrum for at least one sample from the seismic data; calculating at least one dominant frequency (?D) for the at least one spectrum; calculating at least one measure of energy loss at frequencies above the at least one dominant frequency (?D) on the at least one spectrum; and locating a hydrocarbon reservoir in the region of interest using the at least one dominant frequency (?D) and the at least one measure of energy loss.Type: ApplicationFiled: September 24, 2007Publication date: March 26, 2009Applicant: Apex Spectral Technology, Inc.Inventors: Robert W. Wiley, Scott W. Peters, Peter H. Wilson
-
Publication number: 20080270033Abstract: A method for detecting hydrocarbons includes obtaining seismic trace data for a region of interest; and processing the seismic trace data to calculate a Smooth Signal Spectrum for each of a plurality of locations in the region of interest. A system for detecting hydrocarbons includes a processor and a memory, wherein the memory comprises a program having instructions for: obtaining seismic trace data for a region of interest; and processing the seismic trace data to calculate a Smooth Signal Spectrum for each of a plurality of locations in the region of interest.Type: ApplicationFiled: April 23, 2007Publication date: October 30, 2008Applicant: APEX SPECTRAL TECHNOLOGY, INC.Inventors: Robert W. Wiley, Peter H. Wilson, Scott W. Peters
-
Publication number: 20080197407Abstract: A method for controlling the thickness of an expitaxially grown semiconductor material includes providing a semiconductor substrate that is doped by dopants of a first type; forming a buffer layer atop the semiconductor substrate, the buffer layer being doped with dopants of a second type that has much less diffusivity relative to that of dopants of the first type and forming the expitaxially grown layer atop the buffer layer to a desired thickness. The buffer layer, which acts to counter an up-diffusion of the dopants of the first type from the substrate into the epitaxially grown layer, can be doped with arsenic or carbon or both arsenic and carbon. A semiconductor device includes the buffer layer to counter an up-diffusion of the dopants of the first type from the substrate into the epitaxially grown layer.Type: ApplicationFiled: February 28, 2008Publication date: August 21, 2008Inventors: Ashok Challa, Alan Elbanhawy, Steven P. Sapp, Qi Wang, Peter H. Wilson, Babak S. Sani, Christopher B. Kocon
-
Publication number: 20080199997Abstract: A method for forming power semiconductor devices having an inter-electrode dielectric (IPD) layer inside a trench includes providing a semiconductor substrate with a trench, lining the sidewalls and bottom of the trench with a first layer of dielectric material, filling the trench with a first layer of conductive material to form a first electrode, recessing the first layer of dielectric material and the first layer of conductive material to a first depth inside the trench, forming a layer of polysilicon material on a top surface of the dielectric material and conductive material inside the trench, oxidizing the layer of polysilicon material, and forming a second electrode inside the trench atop the oxidized layer and isolated from trench sidewalls by a second dielectric layer. The oxidation step can be enhanced by either chemically or physically altering the top portion polysilicon such as by implanting impurities.Type: ApplicationFiled: March 3, 2008Publication date: August 21, 2008Inventors: Thomas E. Grebs, Rodney S. Ridley, Steven P. Sapp, Peter H. Wilson, Babak S. Sani, Gary M. Dolny, John Mytych, Becky Losee, Adam Selsley, Christopher B. Kocon
-
Publication number: 20080150020Abstract: A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region. The active trench, which includes sidewalls and bottom lined with dielectric material, is substantially filled with a first conductive layer and a second conductive layer. The second conductive layer forms a gate electrode and is disposed above the first conductive layer and is separated from the first conductive layer by an inter-electrode dielectric material. The device also includes source regions having the first conductivity type formed inside the well region and adjacent the active trench and a charge control trench that extends deeper into the drift region than the active trench and is substantially filled with material to allow for vertical charge control in the drift region.Type: ApplicationFiled: January 22, 2008Publication date: June 26, 2008Inventors: Ashok Challa, Alan Elbanhawy, Thomas E. Grebs, Nathan L. Kraft, Dean E. Probst, Rodney S. Ridley, Steven P. Sapp, Qi Wang, Chongman Yun, J. G. Lee, Peter H. Wilson, Joseph A. Yedinak, J. Y. Jung, H. C. Jang, Babak S. Sani, Richard Stokes, Gary M. Dolny, John Mytych, Becky Losee, Adam Selsley, Robert Herrick, James J. Murphy, Gordon K. Madson, Bruce D. Marchant, Christopher L. Rexer, Christopher B. Kocon, Debra S. Woolsey
-
Publication number: 20080138953Abstract: A method for forming thick oxide at the bottom of a trench formed in a semiconductor substrate includes forming a conformal oxide film that fills the trench and covers a top surface of the substrate. and etching the oxide film off the top surface of the substrate and inside the trench to leave a substantially flat layer of oxide having a target thickness at the bottom of the trench. The oxide film can be deposited by sub-atmospheric chemical vapor deposition processes, directional Tetraethoxysilate (TEOS) processes, or high density plasma deposition processes that form a thicker oxide at the bottom of the trench than on the sidewalls of the trench.Type: ApplicationFiled: February 15, 2008Publication date: June 12, 2008Inventors: Ashok Challa, Alan Elbanhawy, Dean E. Probst, Steven P. Sapp, Peter H. Wilson, Babak S. Sani, Becky Losee, Robert Herrick, James J. Murphy, Gordon K. Madson, Bruce D. Marchant, Christopher B. Kocon, Debra S. Woolsey