Abstract: A metal source reagent liquid solution, comprising: (i) at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex, wherein the ligand is selected from the group consisting of: .beta.-diketonates, .beta.-ketoiminates, .beta.-diiminates, C.sub.1 -C.sub.8 alkyl, C.sub.2 -C.sub.10 alkenyl, C.sub.2 -C.sub.15 cycloalkenyl, C.sub.6 -C.sub.10 aryl, C.sub.1 -C.sub.8 alkoxy, and fluorinated derivatives thereof; and (ii) a solvent for the metal coordination complex. The solutions are usefully employed for chemical vapor deposition of metals from the metal coordination complexes, such as Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, and/or Yb. The solvent may comprise glyme solvents, alkanols, organic ethers, aliphatic hydrocarbons, and/or aromatic hydrocarbons.

Abstract: A platinum source reagent liquid solution, comprising:(i) at least one platinum source compound selected from the group consisting of compounds of the formulae:(A) RCpPt(IV)R'.sub.3 compounds, of the formula: ##STR1## wherein: R is selected from the group consisting of hydrogen, methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and each R' is independently selected from the group consisting of methyl, ethyl, i-propyl, n-propyl, n-butyl, i-butyl, t-butyl, trimethylsilyl and trimethylsilyl methyl; and(B) Pt(.beta.-diketonates).sub.2 of the formula: ##STR2## wherein: each R" is independently selected from the group consisting of methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, t-butyl, trifluoromethyl, perfluoroethyl, and perfluoro-n-propyl, and(ii) a solvent medium therefor.

Abstract: A process and apparatus for delivering an involatile reagent in gaseous form, wherein an involatile reagent source liquid is flash vaporized on a vaporization matrix structure at elevated temperature. A carrier gas may be flowed past the flash vaporization matrix structure to yield a carrier gas mixture containing the flash vaporized source reagent. The matrix structure preferably has a high surface-to-volume ratio, and may suitably comprise a foraminous matrix element such as screen mesh onto which the reagent source liquid is distributed for flash vaporization. The invention is particularly useful for delivery of Group II reagents and compounds and complexes of early transition metals such as zirconium and hafnium, and may be usefully employed with Group II beta-diketonate source layers, e.g.

Abstract: A plasma-assisted dry etching process for etching of a metal containing material layer on a substrate to remove the metal containing material from the substrate, comprising (i) plasma etching the metal containing material and, (ii) contemporaneously with said plasma etching, contacting the metal containing material with an etch enhancing reactant in a sufficient amount and at a sufficient rate to enhance the etching removal of the metal containing material, in relation to a corresponding plasma etching of the metal containing material layer on the substrate in the absence of the etch enhancing reactant metal material being contacted with the etch enhancing reactant.

Abstract: Niobium and tantalum compounds suitable for use as chemical vapor deposition source reagents, and a process for depositing niobium- or tantalum-containing coatings using the compounds. The compounds have formulaM(OR.sup.1).sub.x (R.sup.2 --C(GH)--C--C(G)--R.sup.3).sub.ywherein M is tantalum or niobium; G is oxygen or sulfur; and R.sup.1, R.sup.2, and R.sup.3 are independently selected hydrocarbyl, fluoroalkyl or alkoxy groups.

Abstract: Niobium and tantalum compounds suitable for use as chemical vapor deposition source reagents, and a process for depositing niobium- or tantalum-containing coatings using the compounds. The compounds have formulaM(OR.sup.1).sub.x (R.sup.2 --C(GH)--C--C(G)--R.sup.3).sub.ywherein M is tantalum or niobium; G is oxygen or sulfur; and R.sup.1, R.sup.2, and R.sup.

Abstract: A preferred embodiment of this invention comprises a thin unreactive film (e.g. platinum 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive fire can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material.

Abstract: A preferred embodiment of this invention comprises a thin unreactive film (e.g. platinum 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g. palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive film can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material.

Abstract: A preferred embodiment of this invention comprises a thin unreactive film (e.g. platinum 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive film can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material.

Abstract: A process and apparatus for delivering an involatile reagent in gaseous form, wherein an involatile reagent source liquid is flash vaporized on a vaporization matrix structure at elevated temperature. A carrier gas may be flowed past the flash vaporzation matrix structure to yield a carrier gas mixture containing the flash vaporized source reagent. The matrix structure preferably has a high surface-to-volume ratio, and may sutiably comprise a foraminous matrix element such as screen mesh onto which the reagent source liquid is distributed for flash vaporization. The invention is particularly useful for delivery of Group II reagents and compounds and complexes of early transition metals such as zirconium and hafnium, and may be usefully employed with Group II beta-diketonate source layers, e.g.

Abstract: Metal organic chemical vapor deposition (MOCVD) source reagents useful for formation of metal-containing films, such as thin film copper oxide high temperature superconductor (HTSC) materials. The source reagents have the formula MAyX wherein: M is a metal such as Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm Yb, Lu Bi, Tl, Y or Pb; A is a monodentate or multidentate organic ligand; y is 2 or 3; MAy is a stable sub-complex at STP conditions; and X is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O, and F. The ligand A may for example be selected from beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases.

Abstract: A means and method for protecting the moving parts of a pump that is used to pump air- or moisture-sensitive liquids, comprising blanketing the wetted parts of the pump with an inert medium and/or admixing the process liquid with a low vapor pressure liquid component effective for inhibiting corrosion or particulate formation. In another aspect, the invention relates to an apparatus for protecting the wetted, moving parts of pumps used to pump air- or moisture-sensitive liquids. The apparatus provides a mantle within which an inert medium is flowed around the moving, wetted pump parts to continually purge them of any air or moisture.

Abstract: A means and method for protecting a source reagent vaporizer structure from the harmful effects of solid build-up occurring during its use in chemical vapor deposition (CVD). Vaporizer structures may be used to provide a means of transferring relatively involatile source reagents or reagent solutions into CVD reactors and often are high surface area, highly efficient heat transfer structures. When vaporizers are used in CVD, often some premature decomposition of the source reagent occurs on the vaporizer element as well as some oxidative decomposition to produce solid products which cause clogging and inefficient vaporization. The invention provides both apparatus and method to periodically flush clean such vaporizer elements to increase their consistency, reliability, and average time between servicings.

Abstract: A means and method for protecting the moving parts of a pump that is used to pump air- or moisture-sensitive liquids, comprising blanketing the wetted parts of the pump with an inert medium and/or admixing the process liquid with a low vapor pressure liquid component effective for inhibiting corrosion or particulate formation. In another aspect, the invention relates to an apparatus for protecting the wetted, moving parts of pumps used to pump air- or moisture-sensitive liquids. The apparatus provides a mantle within which an inert medium is flowed around the moving, wetted pump parts to continually purge them of any air or moisture.

Abstract: This invention is directed to the metal organic chemical vapor deposition (MOCVD) formation of copper oxide superconductor materials. Various source reagents of Group II elements suitable for high temperature superconductor (HTSC) material formation are described, including beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases, as well as complexes of such Group II compounds, utilizing monodentate or multidentate ligands to provide additional coordination to the Group IIA atom, so that the resulting complex is of enhanced volatility characteristics, and enhanced suitability for MOCVD applications. Also disclosed are methods of synthesizing such compounds and complexes, including a method of making Group II metal beta-diketonate compounds having enhanced thermal stability characteristics.

Abstract: Metal organic chemical vapor deposition (MOCVD) formation of copper oxide superconductor materials. Various source reagents of Group II elements suitable for high temperature superconductor (HTSC) material formation are described, including beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases, as well as complexes of such Group II compounds, utilizing monodentate or multidentate ligands to provide additional coordination to the Group IIA atom, so that the resulting complex is of enhanced volatility characteristics, and enhanced suitability for MOCVD applications. Also disclosed are methods of synthesizing such compounds and complexes, including a method of making Group II metal beta-diketonate compounds having enhanced thermal stability characteristics. Further disclosed are a vertical inverted reactor for chemical vapor deposition, and various methods of processing applied metal oxide films for enhanced HTSC character.

Abstract: A process and apparatus for delivering an involatile reagent in gaseous form, wherein an involatile reagent source liquid is flash vaporized on a vaporization matrix structure at elevated temperature. A carrier gas may be flowed past the flash vaporization matrix structure to yield a carrier gas mixture containing the flash vaporized source reagent. The matrix structure preferably has a high surface-to-volume ratio, and may suitably comGOVERNMENT RIGHTS IN INVENTIONThis invention was made with Government support under Contract No. N00014 88-0531 awarded by the Defense Advanced Projects Research Administration (DARPA). The Government has certain rights in this invention.

Abstract: A multilayer superconducting thin film composite article, comprising a carbon-containing substrate, and an interlayer comprising a material selected from the group consisting of zirconium, yttrium, niobium, and carbides and oxides thereof, platinum, iridium, gold, palladium, and silver, and an overlayer comprising an HTSC material. The carbon-containing substrate preferably comprises diamond and the interlayer preferably comprises a zirconium carbide sub-layer at the interface with the substrate, an intermediate sub-layer of zirconium metal, and an outer sub-layer of zirconium oxide at the interface with the HTSC material overlayer. The superconducting thin film material may comprise a copper oxide HTSC material, with YBaCuO, TlBaCaCuO, and BiSrCaCuO HTSC materials being preferred.