Patents by Inventor Peter Wirtz
Peter Wirtz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11961764Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.Type: GrantFiled: April 15, 2021Date of Patent: April 16, 2024Assignee: STATS ChipPAC Pte. Ltd.Inventors: Thomas J. Strothmann, Damien M. Pricolo, Il Kwon Shim, Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Publication number: 20220093417Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed over a contact pad on the active surface of the semiconductor die. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is disposed over a carrier with the active surface of the semiconductor die offset from the carrier. An encapsulant is deposited over the semiconductor die and carrier to cover a side of the semiconductor die and the exposed portion of the active surface. An interconnect structure is formed over the first conductive layer. Alternatively, a MUF material is deposited over a side of the semiconductor die and the exposed portion of the active surface.Type: ApplicationFiled: December 6, 2021Publication date: March 24, 2022Applicant: STATS ChipPAC Pte. Ltd.Inventors: Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Patent number: 11222793Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed over a contact pad on the active surface of the semiconductor die. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is disposed over a carrier with the active surface of the semiconductor die offset from the carrier. An encapsulant is deposited over the semiconductor die and carrier to cover a side of the semiconductor die and the exposed portion of the active surface. An interconnect structure is formed over the first conductive layer. Alternatively, a MUF material is deposited over a side of the semiconductor die and the exposed portion of the active surface.Type: GrantFiled: November 19, 2019Date of Patent: January 11, 2022Assignee: STATS ChipPAC Pte. Ltd.Inventors: Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Publication number: 20210233815Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.Type: ApplicationFiled: April 15, 2021Publication date: July 29, 2021Applicant: STATS ChipPAC Pte. Ltd.Inventors: Thomas J. Strothmann, Damien M. Pricolo, Il Kwon Shim, Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Patent number: 11011423Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.Type: GrantFiled: November 29, 2018Date of Patent: May 18, 2021Assignee: STATS ChipPAC Pte. Ltd.Inventors: Thomas J. Strothmann, Damien M. Pricolo, Il Kwon Shim, Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Patent number: 10987856Abstract: 3D printed articles, especially those composed of elastomeric silicones, are provided with details including corners and surfaces of high accuracy by placing voxels or strands of curable material at target locations, where the actual position of the print head is determined, and this actual location rather than an assumed location is used to control material placement.Type: GrantFiled: December 21, 2015Date of Patent: April 27, 2021Assignee: Wacker Chemie AGInventors: Maximilian Peter, Dag Ager, Peter Schablitzki, Peter Wirtz
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Publication number: 20200090954Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed over a contact pad on the active surface of the semiconductor die. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is disposed over a carrier with the active surface of the semiconductor die offset from the carrier. An encapsulant is deposited over the semiconductor die and carrier to cover a side of the semiconductor die and the exposed portion of the active surface. An interconnect structure is formed over the first conductive layer. Alternatively, a MUF material is deposited over a side of the semiconductor die and the exposed portion of the active surface.Type: ApplicationFiled: November 19, 2019Publication date: March 19, 2020Applicant: STATS ChipPAC Pte. Ltd.Inventors: Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Method of depositing encapsulant along sides and surface edge of semiconductor die in embedded WLCSP
Patent number: 10515828Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed over a contact pad on the active surface of the semiconductor die. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is disposed over a carrier with the active surface of the semiconductor die offset from the carrier. An encapsulant is deposited over the semiconductor die and carrier to cover a side of the semiconductor die and the exposed portion of the active surface. An interconnect structure is formed over the first conductive layer. Alternatively, a MUF material is deposited over a side of the semiconductor die and the exposed portion of the active surface.Type: GrantFiled: September 23, 2016Date of Patent: December 24, 2019Assignee: STATS ChipPAC Pte. Ltd.Inventors: Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu -
Publication number: 20190109048Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.Type: ApplicationFiled: November 29, 2018Publication date: April 11, 2019Applicant: STATS ChipPAC Pte. Ltd.Inventors: Thomas J. Strothmann, Damien M. Pricolo, Il Kwon Shim, Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Patent number: 10181423Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.Type: GrantFiled: January 24, 2017Date of Patent: January 15, 2019Assignee: STATS ChipPAC Pte. Ltd.Inventors: Thomas J. Strothmann, Damien M. Pricolo, Il Kwon Shim, Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Publication number: 20180370147Abstract: 3D printed articles, especially those composed of elastomeric silicones, are provided with details including corners and surfaces of high accuracy by placing voxels or strands of curable material at target locations, where the actual position of the print head is determined, and this actual location rather than an assumed location is used to control material placement.Type: ApplicationFiled: December 21, 2015Publication date: December 27, 2018Applicant: Wacker Chemie AGInventors: Maximilian PETER, Dag AGER, Peter SCHABLITZKI, Peter WIRTZ
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Publication number: 20170133270Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.Type: ApplicationFiled: January 24, 2017Publication date: May 11, 2017Applicant: STATS ChipPAC Pte. Ltd.Inventors: Thomas J. Strothmann, Damien M. Pricolo, Il Kwon Shim, Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Patent number: 9620413Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.Type: GrantFiled: December 5, 2013Date of Patent: April 11, 2017Assignee: STATS ChipPAC Pte. Ltd.Inventors: Thomas J. Strothmann, Damien M. Pricolo, Il Kwon Shim, Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Publication number: 20170011936Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed over a contact pad on the active surface of the semiconductor die. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is disposed over a carrier with the active surface of the semiconductor die offset from the carrier. An encapsulant is deposited over the semiconductor die and carrier to cover a side of the semiconductor die and the exposed portion of the active surface. An interconnect structure is formed over the first conductive layer. Alternatively, a MUF material is deposited over a side of the semiconductor die and the exposed portion of the active surface.Type: ApplicationFiled: September 23, 2016Publication date: January 12, 2017Applicant: STATS ChipPAC Pte. Ltd.Inventors: Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Patent number: 9496195Abstract: A semiconductor device has a semiconductor wafer including a plurality of semiconductor die. An insulating layer is formed over the semiconductor wafer. A portion of the insulating layer is removed by LDA to expose a portion of an active surface of the semiconductor die. A first conductive layer is formed over a contact pad on the active surface of the semiconductor die. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is disposed over a carrier with the active surface of the semiconductor die offset from the carrier. An encapsulant is deposited over the semiconductor die and carrier to cover a side of the semiconductor die and the exposed portion of the active surface. An interconnect structure is formed over the first conductive layer. Alternatively, a MUF material is deposited over a side of the semiconductor die and the exposed portion of the active surface.Type: GrantFiled: March 15, 2013Date of Patent: November 15, 2016Assignee: STATS ChipPAC Pte. Ltd.Inventors: Yaojian Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu
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Publication number: 20150152193Abstract: The present invention refers to antibodies, particularly to monoclonal antibodies, which bind to the extracellular domain of the AXL receptor tyrosine kinase and which at least partially inhibit AXL activity.Type: ApplicationFiled: December 8, 2014Publication date: June 4, 2015Applicant: U3 PHARMA GMBHInventors: Thore HETTMANN, Jens NIEWOEHNER, Jens RUHE, Peter WIRTZ, Kerstin SELLE, Esther ZWICK-WALLASCH, Mike ROTHE
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Publication number: 20150037323Abstract: The present invention refers to monoclonal humanized antibodies, which bind to the extracellular domain of the AXL receptor tyrosine kinase and which at least partially inhibit AXL activity.Type: ApplicationFiled: July 15, 2014Publication date: February 5, 2015Applicant: U3 PHARMA GMBHInventors: Peter WIRTZ, Jens RUHE, Takeshi TAKIZAWA, Tomoko TAKAYAMA
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Patent number: 8933202Abstract: The present invention refers to antibodies, particularly to monoclonal antibodies, which bind to the extracellular domain of the AXL receptor tyrosine kinase and which at least partially inhibit AXL activity.Type: GrantFiled: November 12, 2008Date of Patent: January 13, 2015Assignee: U3 Pharma GmbHInventors: Thore Hettmann, Jens Niewöhner, Jens Ruhe, Peter Wirtz, Kerstin Selle, Esther Zwick-Wallasch, Mike Rothe
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Patent number: 8841424Abstract: The present invention refers to monoclonal humanized antibodies, which bind to the extracellular domain of the AXL receptor tyrosine kinase and which at least partially inhibit AXL activity.Type: GrantFiled: May 11, 2010Date of Patent: September 23, 2014Assignee: U3 Pharma GmbHInventors: Peter Wirtz, Jens Ruhe, Takeshi Takizawa, Tomoko Takayama
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Publication number: 20140091455Abstract: A semiconductor device has a carrier with a fixed size. A plurality of first semiconductor die is singulated from a first semiconductor wafer. The first semiconductor die are disposed over the carrier. The number of first semiconductor die on the carrier is independent from the size and number of first semiconductor die singulated from the first semiconductor wafer. An encapsulant is deposited over and around the first semiconductor die and carrier to form a reconstituted panel. An interconnect structure is formed over the reconstituted panel while leaving the encapsulant devoid of the interconnect structure. The reconstituted panel is singulated through the encapsulant. The first semiconductor die are removed from the carrier. A second semiconductor die with a size different from the size of the first semiconductor die is disposed over the carrier. The fixed size of the carrier is independent of a size of the second semiconductor die.Type: ApplicationFiled: December 5, 2013Publication date: April 3, 2014Applicant: STATS ChipPAC, Ltd.Inventors: Thomas J. Strothmann, Damien M. Pricolo, Il Kwon Shim, Yaojioan Lin, Heinz-Peter Wirtz, Seung Wook Yoon, Pandi C. Marimuthu