Patents by Inventor Philip Fisher

Philip Fisher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6596553
    Abstract: An exemplary embodiment relates to a method of pinhole decoration and detection. The method can include providing a material layer above an amorphous carbon layer where the material layer has a pinhole, providing a film over the material layer where the film has a substantially planar surface except above the pinhole, and detecting the pinhole by detecting a non-planar location on the substantially planar surface of the film.
    Type: Grant
    Filed: June 26, 2002
    Date of Patent: July 22, 2003
    Assignee: Advanced Micro Devices, Inc.
    Inventors: David Lin, Scott A. Bell, Philip A. Fisher, Srikanteswara Dakshina-Murthy
  • Patent number: 6559017
    Abstract: A method of using amorphous carbon as spacer material in a disposable spacer process can include forming amorphous carbon spacers at lateral side walls of a gate structure over a substrate, implanting dopants in the substrate to form source and drain regions, ashing away the amorphous carbon spacers, and implanting dopants to form shallow structures in the substrate.
    Type: Grant
    Filed: June 13, 2002
    Date of Patent: May 6, 2003
    Assignee: Advanced Micro Devices, Inc.
    Inventors: David E. Brown, Philip A. Fisher, Richard J. Huang, Richard C. Nguyen, Cyrus E. Tabery
  • Patent number: 6534379
    Abstract: A method of making a semiconductor device and a method of isolation of active islands on a silicon-on-insulator semiconductor device, comprising the steps of providing a silicon-on-insulator semiconductor wafer having a silicon active layer, a dielectric isolation layer and a silicon substrate, in which the silicon active layer is formed on the dielectric isolation layer and the dielectric isolation layer is formed on the silicon substrate; forming an isolation trench, the isolation trench defining an active island in the silicon active layer; rounding at least one corner in the active island by application of a high RF bias power high density plasma; and filling the isolation trench with a dielectric trench isolation material by application of a low RF bias power high density plasma. In one embodiment, the rounding step comprises application of a HDP under etching conditions, and the filling step comprises application of a HDP under deposition conditions.
    Type: Grant
    Filed: January 18, 2002
    Date of Patent: March 18, 2003
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Philip Fisher, Ming-Ren Lin, Matthew S. Buynoski
  • Patent number: 6524929
    Abstract: A method of isolation of active islands on a silicon-on-insulator semiconductor device, comprising the steps of providing a silicon-on-insulator semiconductor wafer having a silicon active layer, a dielectric insulation layer and a silicon substrate; forming an isolation trench through the silicon active layer, the isolation trench defining at least one active island in the silicon active layer; depositing a passivating insulator in a lower portion of the isolation trench; and filling the isolation trench above the passivating insulator with a trench isolation material.
    Type: Grant
    Filed: February 26, 2001
    Date of Patent: February 25, 2003
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Qi Xiang, Philip A. Fisher
  • Patent number: 6521510
    Abstract: A method of isolation of active islands on a silicon-on-insulator semiconductor device, including steps of (1) providing a silicon-on-insulator semiconductor wafer having a silicon active layer, a dielectric insulation layer and a silicon substrate; (2) etching through the silicon active layer to form an isolation trench, the isolation trench defining an active island in the silicon active layer, the active island having at least one upper sharp corner; (3) rounding the at least one upper sharp corner of the active island, whereby at least one strained edge portion of the active island is formed; (4) removing at least a part of the at least one strained edge portion; and (5) at least partially filling the isolation trench with a dielectric trench isolation material to form a shallow trench isolation structure. An SOI wafer semiconductor device having a STI isolation structure free from a strained edge portion and a bird's beak.
    Type: Grant
    Filed: March 25, 2002
    Date of Patent: February 18, 2003
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Philip Fisher, Darin A. Chan
  • Patent number: 6500756
    Abstract: A method of forming spaces between polysilicon lines can include patterning structures having top SiON layers and bottom amorphous carbon layers where the structures are located over a polysilicon layer and are separated by a first width, forming amorphous carbon spacers along lateral side walls of the patterned structures, etching apertures into the polysilicon layer not covered by the amorphous carbon spacers and the patterned structures where the apertures in the polysilicon layer between adjacent patterned structures have a second width, and ashing away the amorphous carbon spacers and the patterned structures. The second width is less than the first width.
    Type: Grant
    Filed: June 28, 2002
    Date of Patent: December 31, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Scott A. Bell, Philip A. Fisher, Richard C. Nguyen, Cyrus E. Tabery
  • Patent number: 6485945
    Abstract: An entirely aqueous method for concentrating water soluble polysaccharides having molecular weights of at least about 50 kDa. The method comprises evaporating a water soluble polysaccharide-containing solution until surface film formation occurs, and harvesting the resulting film which is enriched in the polysaccharide. The polysaccharide may be of plant or animal origin, and includes polysaccharides such as guar gum, xanthan gum and pectin.
    Type: Grant
    Filed: November 19, 1999
    Date of Patent: November 26, 2002
    Assignee: Nurture, Inc.
    Inventors: Richard C. Potter, Philip A. Fisher, Kirk R. Hash, Sr., John D. Neidt
  • Publication number: 20020157739
    Abstract: Apparatus for heat treating a cutting tool comprises a furnace and a tool holder within the furnace adapted to receive therein a first portion of the tool, a second portion of the tool projecting from the tool holder, the second portion of the tool being directly exposed to radiant heat from at least one radiant heating element within the furnace with the first portion of the tool being shielded from the radiant heat.
    Type: Application
    Filed: July 27, 2001
    Publication date: October 31, 2002
    Inventors: Geoffrey Philip Fisher, Richard Mark Lill, Edgar Dabill, Martin John Monaghan, Jonathan Clifford Oates, Graham Monteith Smith
  • Patent number: 6391733
    Abstract: A method of making a semiconductor device includes performing a doping implant through a layer of dielectric material. The implanting through dielectric material enables use of high-energy implants to form shallow doped regions. Other implanting steps may also be combined with the implanting through the dielectric material.
    Type: Grant
    Filed: May 4, 2001
    Date of Patent: May 21, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventor: Philip A. Fisher
  • Publication number: 20020016454
    Abstract: An entirely aqueous method for concentrating beta-glucan from a beta-glucan source, such as milled cereal bran, grain or distiller's dried grain. The method comprises providing an alkaline aqueous extract of a beta-glucan source; acidifying or neutralizing the extract and heating the extract to between about 60° C. and 100° C.; cooling the extract, whereby a flocculate is formed; acidifying the cooled extract if the extract was neutralized; and removing the flocculate from the aqueous solution to form an intermediate solution. The intermediate solution may be subjected to ultrafiltration for further purification of beta-glucan, or may be evaporated, resulting in formation of a solid film enriched in beta-glucan. Beta-glucan has cholesterol-lowering properties and is a topical immunostimulant.
    Type: Application
    Filed: August 2, 2001
    Publication date: February 7, 2002
    Inventors: Richard C. Potter, Philip A. Fisher, Kirk R. Hash, John D. Neidt
  • Patent number: 6323338
    Abstract: An entirely aqueous method for concentrating beta-glucan from a beta-glucan source, such as milled cereal bran, grain or distiller's dried grain. The method comprises providing an alkaline aqueous extract of a beta-glucan source; acidifying or neutralizing the extract and heating the extract to between about 60° C. and 100° C.; cooling the extract, whereby a flocculate is formed; acidifing the cooled extract if the extract was neutralized; and removing the flocculate from the aqueous solution to form an intermediate solution. The intermediate solution may be subjected to ultrafiltration for further purification of beta-glucan, or may be evaporated, resulting in formation of a solid film enriched in beta-glucan. Beta-glucan has cholesterol-lowering properties and is a topical immunostimulant.
    Type: Grant
    Filed: February 17, 1999
    Date of Patent: November 27, 2001
    Assignee: Nurture, Inc.
    Inventors: Richard C. Potter, Philip A. Fisher, Kirk R. Hash, Sr., John D. Neidt