Patents by Inventor Philip M. Lessner

Philip M. Lessner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20140160632
    Abstract: Provided herein is an improved capacitor and a method for forming an improved capacitor. The method includes providing an anode and forming a dielectric on the anode. A linear-hyperbranched polymer is formed and a conductive polymer dispersion is prepared comprising at least one conducting polymer, one polyanion and the linear-hyperbranched polymer. A layer of the conductive polymer dispersion if formed wherein said dielectric is between the anode and the layer.
    Type: Application
    Filed: December 6, 2013
    Publication date: June 12, 2014
    Applicant: Kemet Electronics Corporation
    Inventors: Antony P. Chacko, Gopakumar Sivasankarapillai, Yaru Shi, Philip M. Lessner
  • Publication number: 20140061284
    Abstract: A process for providing an improved hermetically sealed capacitor which includes the steps of applying a solder and a flux to an interior surface of a case; flowing the solder onto the interior surface; remove flux thereby forming a flux depleted solder; inserting the capacitive element into the casing; reflowing the flux depleted solder thereby forming a solder joint between the case and the solderable layer; and sealing the case.
    Type: Application
    Filed: September 4, 2013
    Publication date: March 6, 2014
    Applicant: Kemet Electronics Corporation
    Inventors: Steven C. Hussey, Yuri Freeman, Philip M. Lessner, Qingping Chen, Javaid Qazi
  • Publication number: 20130314845
    Abstract: A solid electrolytic capacitor is described which comprises an anode, a dielectric on the anode and a cathode on the dielectric. A conductive coating is on the cathode wherein the conductive layer comprises an exterior surface of a first high melting point metal. An adjacent layer is provided comprising a second high melting point metal, wherein the first high melting point metal and the second high melting point metal are metallurgically bonded with a low melting point metal.
    Type: Application
    Filed: August 6, 2013
    Publication date: November 28, 2013
    Applicant: Kemet Electronics Corporation
    Inventors: Antony P. Chacko, John E. McConnell, Robert Ramsbottom, Philip M. Lessner, Randolph S. Hahn, John Bultitude
  • Publication number: 20130250486
    Abstract: An improved solid electrolytic capacitor and method of forming a solid electrolytic capacitor is described. The method includes forming an anode comprising a valve metal or conductive oxide of a valve metal wherein an anode lead extension protrudes from the anode. A dielectric is formed on the anode and a cathode layer is formed on the dielectric. The anode, dielectric, and cathode layer are encased in a non-conducting material and the anode lead extension is exposed outside of the encasement at a side surface. A conductive metal layer is adhered to the anode lead extension which allows termination preferably by electrically connecting a preformed solid metal terminal, most preferably an L shaped terminal, to the conductive metal layer at the side surface.
    Type: Application
    Filed: May 15, 2013
    Publication date: September 26, 2013
    Applicant: Kemet Electronics Corporation
    Inventors: Brandon Summey, Jeffrey Poltorak, Philip M. Lessner, Yongjian Qiu, Randolph S. Hahn, David Jacobs, Keith R. Brenneman, Albert K. Harrington, Chris Stolarski
  • Patent number: 8520366
    Abstract: An improved solid electrolytic capacitor and method of forming a solid electrolytic capacitor is described. The method includes forming an anode comprising a valve metal or conductive oxide of a valve metal wherein an anode lead extension protrudes from the anode. A dielectric is formed on the anode and a cathode layer is formed on the dielectric. The anode, dielectric, and cathode layer are encased in a non-conducting material and the anode lead extension is exposed outside of the encasement at a side surface. A conductive metal layer is adhered to the anode lead extension which allows termination preferably by electrically connecting a preformed solid metal terminal, most preferably an L shaped terminal, to the conductive metal layer at the side surface.
    Type: Grant
    Filed: December 22, 2010
    Date of Patent: August 27, 2013
    Assignee: Kemet Electronics Corporation
    Inventors: Brandon Summey, Jeffrey Poltorak, Philip M. Lessner, Yongjian Qiu, Randolph S. Hahn, David Jacobs, Keith R. Brenneman, Albert Harrington, Chris Stolarski
  • Publication number: 20130107419
    Abstract: A capacitor with improved lead frame attachment is described wherein the improved lead frame attachment mitigates defects. The capacitor comprises parallel conductive internal electrodes of alternating polarity with a dielectric between the conductive internal electrodes. A first copper undercoat is in electrical contact with the conductive internal electrodes of a first polarity and a second copper undercoat is in electrical contact with conductive internal electrodes of a second polarity. A first lead is in electrical contact with the first copper undercoat with a first solder between the first lead and the first copper undercoat. A second lead is in electrical contact with the second copper undercoat with a second solder between the second lead and the second copper undercoat.
    Type: Application
    Filed: October 28, 2011
    Publication date: May 2, 2013
    Applicant: KEMET ELECTRONICS CORPORATION
    Inventors: R. Allen Hill, Philip M. Lessner, Reggie Phillips, Keith Brown, James B. Byrd
  • Patent number: 8349030
    Abstract: A process for the manufacturing valve metal anodes is provided. The process includes: providing a valve metal powder; pressing the valve metal powder to form a pellet; first deoxidizing the pellet with a first reducing agent to form a first oxide of reducing agent on the pellet; removing the first oxide of reducing agent from the pellet to form a deoxidized pellet; sintering the deoxidized pellet to form a sintered pellet; second deoxidizing the sintered pellet with a second reducing agent to form a second oxide of reducing agent on the sintered pellet; and removing said second oxide of reducing agent.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: January 8, 2013
    Assignee: Kemet Electronics Corporation
    Inventors: Steven C. Hussey, Yuri Freeman, Philip M. Lessner
  • Patent number: 8325465
    Abstract: A capacitor is described with an NbO anode. The capacitor has an NbO anode and an NbO anode lead extending from the NbO anode. A dielectric is on the NbO anode and a conductor is on the dielectric.
    Type: Grant
    Filed: July 8, 2008
    Date of Patent: December 4, 2012
    Assignee: Kemet Electronics Corporation
    Inventors: Yuri Freeman, Philip M. Lessner, Jeffrey Poltorak, Randolph S. Hahn
  • Patent number: 8323361
    Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached there to. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.
    Type: Grant
    Filed: June 22, 2011
    Date of Patent: December 4, 2012
    Assignee: Kemet Electronics Corporation
    Inventors: Yuri Freeman, Jake Yongjian Qiu, Steven C. Hussey, Philip M. Lessner, Yongjian Qiu
  • Patent number: 8308825
    Abstract: A method for treating anodes of refractory valve metals by deoxidizing the anodes using Mg in an oven, prior to sintering. The process limits free oxygen in the metal compact and improves performance of a capacitor, especially with regards to rated voltage.
    Type: Grant
    Filed: December 11, 2009
    Date of Patent: November 13, 2012
    Assignee: Kemet Electronics Corporation
    Inventors: Yuri Freeman, Philip M. Lessner, Jeffrey Poltorak, Steven C. Hussey
  • Patent number: 8310815
    Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached there to. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.
    Type: Grant
    Filed: April 20, 2009
    Date of Patent: November 13, 2012
    Assignee: Kemet Electronics Corporation
    Inventors: Yuri Freeman, Yongjian Qiu, Steven C. Hussey, Philip M. Lessner
  • Publication number: 20110292572
    Abstract: A solid electrolytic capacitor with an anode and a dielectric on the anode. A cathode is on the dielectric and a conductive coating on said dielectric. A cathode lead is electrically connected to the conductive coating by an adhesive selected from the group consisting of a transient liquid phase sinterable material and polymer solder.
    Type: Application
    Filed: May 24, 2011
    Publication date: December 1, 2011
    Applicant: Kemet Electronics Corporation
    Inventors: Antony P. Chacko, John E. McConnell, Philip M. Lessner, Randolph S. Hahn, John Bultitude
  • Publication number: 20110292567
    Abstract: A capacitor has first planer internal electrodes in electrical contact with a first external termination. Second planer internal electrodes are interleaved with the first planer internal electrodes wherein the second planer internal electrodes are in electrical contact with a second external termination. A dielectric is between the first planer internal electrodes and the second planer internal electrodes and at least one of the external terminations comprises a material selected from a polymer solder and a transient liquid phase sintering adhesive.
    Type: Application
    Filed: May 24, 2011
    Publication date: December 1, 2011
    Applicant: Kemet Electronics Corporation
    Inventors: John E. McConnell, John Bultitude, Reggie Phillips, Robert Allen Hill, Garry L. Renner, Philip M. Lessner, Antony P. Chacko, Jeffrey Bell, Keith Brown
  • Publication number: 20110252613
    Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached there to. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.
    Type: Application
    Filed: June 22, 2011
    Publication date: October 20, 2011
    Applicant: Kemet Electronics Corporation
    Inventors: Yuri Freeman, Jake Yongjian Qiu, Steven C. Hussey, Philip M. Lessner, Yongjian Qiu
  • Publication number: 20110149477
    Abstract: An improved solid electrolytic capacitor and method of forming a solid electrolytic capacitor is described. The method includes forming an anode comprising a valve metal or conductive oxide of a valve metal wherein an anode lead extension protrudes from the anode. A dielectric is formed on the anode and a cathode layer is formed on the dielectric. The anode, dielectric, and cathode layer are encased in a non-conducting material and the anode lead extension is exposed outside of the encasement at a side surface. A conductive metal layer is adhered to the anode lead extension which allows termination preferably by electrically connecting a preformed solid metal terminal, most preferably an L shaped terminal, to the conductive metal layer at the side surface.
    Type: Application
    Filed: December 22, 2010
    Publication date: June 23, 2011
    Inventors: Brandon Summey, Jeffrey Poltorak, Philip M. Lessner, Yongjian Qiu, Randolph S. Hahn, David Jacobs, Keith R. Brenneman, Albert Harrington, Chris Stolarski
  • Publication number: 20100265634
    Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached there to. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.
    Type: Application
    Filed: April 20, 2009
    Publication date: October 21, 2010
    Inventors: Yuri Freeman, Jake Yongjian Qiu, Steven C. Hussey, Philip M. Lessner
  • Publication number: 20100246096
    Abstract: A process for forming a capacitor. The process includes providing an anode; providing a dielectric on the anode; exposing the anode to a polymer precursor solution comprising monomer, conjugated oligomer and optionally solvent and polymerizing the polymer precursor. The ratio between monomer and conjugated oligomer ranges from 99.9/0.1 to 75/25 by weight. The solvent content in the polymer precursor solution is from 0 to 99% by weight.
    Type: Application
    Filed: May 19, 2010
    Publication date: September 30, 2010
    Inventors: Qingping Chen, Keith R. Brenneman, Yuhong Ma, Yongjian Qiu, Philip M. Lessner, Randy S. Hahn
  • Patent number: 7754276
    Abstract: A method for maintaining quality of monomer during a coating process for intrinsically conductive polymer which suppresses unwanted by-products. A neutralization process using a base or anion exchange resin is used batch-wise or continuous.
    Type: Grant
    Filed: April 16, 2007
    Date of Patent: July 13, 2010
    Assignee: KEMET Electronics Corporation
    Inventors: Yongjian Qiu, Qingping Chen, Philip M. Lessner, Randy S. Hahn, Cynthia L. Prince, Keith R. Brenneman
  • Publication number: 20100092326
    Abstract: A method for treating anodes of refractory valve metals by deoxidizing the anodes using Mg in an oven, prior to sintering. The process limits free oxygen in the metal compact and improves performance of a capacitor, especially with regards to rated voltage.
    Type: Application
    Filed: December 11, 2009
    Publication date: April 15, 2010
    Inventors: Yuri Freeman, Philip M. Lessner, Jeffrey Poltorak, Steven C. Hussey
  • Publication number: 20090279233
    Abstract: A method for treating anodes of refractory valve metals by deoxidizing the anodes using Mg in an oven, prior to sintering. The process limits free oxygen in the metal compact and improves performance of a capacitor, especially with regards to rated voltage.
    Type: Application
    Filed: May 12, 2008
    Publication date: November 12, 2009
    Inventors: Yuri Freeman, Philip M. Lessner, Jeffrey Poltorak, Steven C. Hussey