Patents by Inventor Pierre M. Petroff

Pierre M. Petroff has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making an improved group III-V semiconductor device utilizing a getter-smoothing layer
    Patent number: 4578127
    Abstract: Single GaAs quantum well or single GaAs active layer or single reverse interface structures with Al.sub.x Ga.sub.1-x As barrier layers have improved qualities when one or more narrow bandgap GaAs getter-smoothing layers, which are thin, are grown and are incorporated in the barrier layer before and in close proximity to the active layer.
    Type: Grant
    Filed: August 13, 1982
    Date of Patent: March 25, 1986
    Assignee: AT&T Bell Laboratories
    Inventors: Arthur C. Gossard, Robert C. Miller, Pierre M. Petroff
  • Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy
    Patent number: 4261771
    Abstract: Suitably modified molecular beam epitaxy (MBF) techniques are used to synthesize single crystal, periodic monolayer superlattices of semiconductor alloys on single crystal substrates maintained below a critical growth temperature. Described is the fabrication of periodic structures of (GaAs).sub.n (AlAs).sub.m, where m and n are the number of contiguous monolayers of GaAs and AlAs, respectively, in each period of the structure. As many as 10,000 monolayers were grown in a single structure. Also described is the MBE growth of (Al.sub.x Ga.sub.1-x As).sub.n (Ge.sub.2).sub.m, quasi-superlattice and non-superlattice structures depending on the particular values of n, m and the growth temperature. Waveguides, heterostructure lasers and X-ray reflectors using some of the structures are also described.
    Type: Grant
    Filed: October 31, 1979
    Date of Patent: April 14, 1981
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Raymond Dingle, Arthur C. Gossard, Pierre M. Petroff, William Wiegmann
  • Periodic monolayer semiconductor structures grown by molecular beam epitaxy
    Patent number: 4205329
    Abstract: Suitably modified molecular beam epitaxy (MBE) techniques are used to synthesize single crystal, periodic monolayer superlattices of semiconductor alloys on single crystal substrates maintained below a critical growth temperature. Described is the fabrication of periodic structures of (GaAs).sub.n (AlAs).sub.m, where m and n are the number of contiguous monolayers of GaAs and AlAs, respectively, in each period of the structure. As many as 10,000 monolayers were grown in a single structure. Also described is the MBE growth of (Al.sub.x Ga.sub.1-x As).sub.n (Ge.sub.2).sub.m, quasi-superlattice and non-superlattice structures depending on the particular values of n, m and the growth temperature. Waveguides, heterostructure lasers and X-ray reflectors using some of the structures are also described.
    Type: Grant
    Filed: November 18, 1977
    Date of Patent: May 27, 1980
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Raymond Dingle, Arthur C. Gossard, Pierre M. Petroff, William Wiegmann