Abstract: A system and method instantly on-site analyze seismic acceleration signals measured from a primary wave of an earthquake and at a detecting site. The system includes an embedded computing host and a signal preprocessing module. Hardware preprocessing is executed on the seismic acceleration signals; and whether the earthquake is a seismic event is able to be determined according to a seism determining logic. Seismic acceleration signals are converted into ground velocities and ground displacements to obtain a peak ground displacement. A seismic fracture time parameter is calculated through the ground velocities and ground displacements and then a seismic magnitude of the earthquake is obtained. According to the peak ground displacement and the seismic magnitude, an epicentral distance is further calculated. Then a peak ground acceleration of the earthquake's shear wave at the detection site is able to be obtained through the seismic magnitude and the epicentral distance.

Abstract: A method of forming RMG multi-WF layers for an nFET and pFET, and the resulting device are provided. Embodiments include forming a Si fin; forming a nFET RMG trench and a pFET RMG trench; forming a first Ti layer in the nFET and pFET RMG trenches; implanting N2 in the first Ti layer vertically at a 0° implant angle in the pFET RMG trench; annealing the N2 implanted first Ti layer to form a TiN layer in the pFET RMG trench; stripping un-reacted Ti of the first Ti layer; forming a second Ti layer in the nFET and pFET RMG trenches; implanting Al or C in the second Ti layer vertically at 0°; annealing the Al or C implanted second Ti layer to form TiAl or TiC at a bottom of the nFET and pFET RMG trenches, respectively; and filling the nFET and pFET RMG trenches with Al or W.

Abstract: A method of forming RMG multi-WF layers for an nFET and pFET, and the resulting device are provided. Embodiments include forming a Si fin; forming a nFET RMG trench and a pFET RMG trench; forming a first Ti layer in the nFET and pFET RMG trenches; implanting N2 in the first Ti layer vertically at a 0° implant angle in the pFET RMG trench; annealing the N2 implanted first Ti layer to form a TiN layer in the pFET RMG trench; stripping un-reacted Ti of the first Ti layer; forming a second Ti layer in the nFET and pFET RMG trenches; implanting Al or C in the second Ti layer vertically at 0°; annealing the Al or C implanted second Ti layer to form TiAl or TiC at a bottom of the nFET and pFET RMG trenches, respectively; and filling the nFET and pFET RMG trenches with Al or W.

Abstract: Fin-type transistor fabrication methods and structures are provided having one or more nitrided conformal layers, to improve reliability of the semiconductor device. The method includes, for example, providing at least one material layer disposed, in part, conformally over a fin extending above a substrate, the material layer(s) including a gate dielectric layer; and performing a conformal nitridation process over an exposed surface of the material layer(s), the conformal nitridation process forming an exposed, conformal nitrided surface.

Abstract: This invention is directed to novel mixed transition metal iron (II/III) catalysts for the extraction of oxygen from CO2 and the selective reaction with organic compounds.

Abstract: Methods of fabricating transistors having raised active region(s) with at least partially angled upper surfaces are provided. The method includes, for instance: providing a gate structure disposed over a substrate, the gate structure including a conformal spacer layer; forming a raised active region adjoining a sidewall of the conformal spacer layer; providing a protective material over the raised active region; selectively etching-back the sidewall of the conformal spacer layer, exposing a side portion of the raised active region below the protective material; and etching the exposed side portion of the raised active region to partially undercut the protective material, wherein the etching facilitates defining, at least in part, an at least partially angled upper surface of the raised active region of the transistor.

Abstract: Fin-type transistor fabrication methods and structures are provided having one or more nitrided conformal layers, to improve reliability of the semiconductor device. The method includes, for example, providing at least one material layer disposed, in part, conformally over a fin extending above a substrate, the material layer(s) including a gate dielectric layer; and performing a conformal nitridation process over an exposed surface of the material layer(s), the conformal nitridation process forming an exposed, conformal nitrided surface.

Abstract: A semiconductor structure with wide-bottom and/or wide-top gates includes a semiconductor substrate, a source region(s), a drain region(s) associated with the source region(s), and a gate(s) associated with the source region(s) and the drain region(s) having a top portion and a bottom portion. One of the top portion and the bottom portion of the gate(s) is wider than the other of the top portion and bottom portion. The wide-bottom gate is created using a dummy wide-bottom gate etched from a layer of dummy gate material, creating spacers for the dummy gate, removing the dummy gate material and filling the opening created with conductive material. For the wide-top gate, first and second spacers are included, and instead of removing all the dummy gate material, only a portion is removed, exposing the first spacers. The exposed portion of the first spacers may either be completely or partially removed (e.g., tapered), in order to increase the area of the top portion of the gate to be filled.

Abstract: A method includes forming a gate structure by growing an interfacial layer on a substrate, depositing a High K layer on the interfacial layer, depositing a TiN Cap on the High K layer and forming a thin barrier layer on the TiN Cap. The gate structure is annealed.

Abstract: A supplying system of adding gas into the polishing slurry and method thereof are described. The supplying system includes a slurry container, a gas-mixed container, an adjusting device, a first flow controller, and a second flow controller. The supplying system utilizes the adjusting device to mix the polishing slurry with gas for forming the gas-mixed polishing slurry. The supplying system of adding the gas into the polishing slurry and method thereof are capable of increasing the material removal rate of the surface of the substrate in order to improve the processing quality of the substrate.

Abstract: Fin-type transistor fabrication methods and structures are provided having one or more nitrided conformal layers, to improve reliability of the semiconductor device. The method includes, for example, providing at least one material layer disposed, in part, conformally over a fin extending above a substrate, the material layer(s) including a gate dielectric layer; and performing a conformal nitridation process over an exposed surface of the material layer(s), the conformal nitridation process forming an exposed, conformal nitrided surface.

Abstract: A mixed salt composition adapted for use as a sorbent for carbon dioxide removal from a gaseous stream is provided, the composition being in solid form and including magnesium oxide, an alkali metal carbonate, and an alkali metal nitrate, wherein the composition has a molar excess of magnesium characterized by a Mg:X atomic ratio of at least about 3:1, wherein X is the alkali metal. A process for preparing the mixed salt is also provided, the process including mixing a magnesium salt with a solution comprising alkali metal ions, carbonate ions, and nitrate ions to form a slurry or colloid including a solid mixed salt including magnesium carbonate; separating the solid mixed salt from the slurry or colloid to form a wet cake; drying the wet cake to form a dry cake including the solid mixed salt; and calcining the dry cake to form a mixed salt sorbent.

Abstract: The invention is directed to high surface area graphitized carbon and to processes for making high surface area graphitized carbon. The process includes steps of graphitizing and increasing the surface area of (in either order) a starting carbon material to form high surface area graphitized carbon. The step of increasing the surface area optionally comprises an oxidizing step (e.g., through steam etching) or template removal from composite particles. The invention is also directed to catalyst particles and electrodes employing catalyst particles that are formed from the high surface area graphitized carbon.

Abstract: A filter cartridge endplate (12) is described herein that has an integrated flow structure. For example, the integrated flow structure has concentric flow portions disposed at a center of the endplate (12), where a separator (10) is built into the endplate (12) that separates fluid flow. The endplate (12) includes a plate with a major surface, a separator (10) that protrudes axially away from the major surface. The separator (10) includes a first flow portion (14) and a second flow portion (16), where the first flow portion (14) is disposed radially inward relative to the second flow portion (16). The first flow portion (14) includes a channel (22) and the second flow portion includes a channel (24). The respective channels (22,24) are configured to allow axial fluid flow relative to the plate, and configured to allow fluid flow that is localized toward the center of the plate (12).

Abstract: Systems and methods are provided for controlling operating modes on a smart platform. An application interface receives user input to establish a trigger profile for a first operating mode. A detection module detects a status change between at least one external device and the smart platform. A service module determines that the status change meets the trigger profile established for the first operating mode, and in response, launches the first operating mode on the smart platform.

Abstract: Described herein are processes for converting a biomass starting material (such as lignocellulosic materials) into a low oxygen containing, stable liquid intermediate that can be refined to make liquid hydrocarbon fuels. More specifically, the process can be a catalytic biomass pyrolysis process wherein an oxygen removing catalyst is employed in the reactor while the biomass is subjected to pyrolysis conditions. The stream exiting the pyrolysis reactor comprises bio-oil having a low oxygen content, and such stream may be subjected to further steps, such as separation and/or condensation to isolate the bio-oil.

Abstract: Aspects of the disclosure provide a method for icon based application control. The method includes receiving, by a processor, a detection signal indicative of a pre-defined user action on an icon in a graphical user interface (GUI). The icon has an associated application. Further, the method includes extracting adjustable settings of the associated application with the icon, and providing, by the processor, a setting interface for the icon in the GUI to enable adjustments of the settings for the application to be performed via the setting interface.

Abstract: Systems and methods are provided for application management on mobile devices. One or more application programming interfaces (APIs) on a mobile device are called in response to a triggering event. A hidden application interface is displayed. A user selection of one or more applications is received on the hidden application interface. The applications (e.g., icons of the applications) are prevented from being displayed on one or more user interfaces of the mobile device.

Abstract: A method includes forming a gate structure by growing an interfacial layer on a substrate, depositing a High K layer on the interfacial layer, depositing a TiN Cap on the High K layer and forming a thin barrier layer on the TiN Cap. The gate structure is annealed.

Abstract: A supplying system of adding gas into the polishing slurry and method thereof are described. The supplying system includes a slurry container, a gas-mixed container, an adjusting device, a first flow controller, and a second flow controller. The supplying system utilizes the adjusting device to mix the polishing slurry with gas for forming the gas-mixed polishing slurry. The supplying system of adding the gas into the polishing slurry and method thereof are capable of increasing the material removal rate of the surface of the substrate in order to improve the processing quality of the substrate.