Patents by Inventor Po-Chun Yang
Po-Chun Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11972957Abstract: A gas flow accelerator may include a body portion, and a tapered body portion including a first end integrally formed with the body portion. The gas flow accelerator may include an inlet port connected to the body portion and to receive a process gas to be removed from a semiconductor processing tool by a main pumping line. The semiconductor processing tool may include a chuck and a chuck vacuum line to apply a vacuum to the chuck to retain a semiconductor device. The tapered body portion may be configured to generate a rotational flow of the process gas to prevent buildup of processing byproduct on interior walls of the main pumping line. The gas flow accelerator may include an outlet port integrally formed with a second end of the tapered body portion. An end portion of the chuck vacuum line may be provided through the outlet port.Type: GrantFiled: July 31, 2020Date of Patent: April 30, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sheng-chun Yang, Chih-Lung Cheng, Yi-Ming Lin, Po-Chih Huang, Yu-Hsiang Juan, Xuan-Yang Zheng
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Patent number: 11955154Abstract: A sense amplifier circuit includes a sense amplifier, a switch and a temperature compensation circuit. The temperature compensation circuit provides a control signal having a positive temperature coefficient, based on which the switch provides reference impedance for temperature compensation. The sense amplifier includes a first input end coupled to a target bit and a second input end coupled to the switch. The sense amplifier outputs a sense amplifier signal based on the reference impedance and the impedance of the target bit.Type: GrantFiled: May 16, 2022Date of Patent: April 9, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Cheng-Tung Huang, Jen-Yu Wang, Po-Chun Yang, Yi-Ting Wu, Yung-Ching Hsieh, Jian-Jhong Chen, Chia-Wei Lee
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Patent number: 11941157Abstract: A computer implemented method for managing the scope of permissions granted by users to application that includes collecting a set of permissions for an application from an application provider publication; and collecting a process flow for functional steps of the application from a review of the application that is published on a product review type publication. The computer implemented method further includes dividing the functional steps of the application into a plurality of journeys, each of said plurality of journeys having a function associated with a stage of a functional step from a perspective of a user; and matching permissions from the set of permissions for each journey of said plurality of journeys to provide matched permissible permissions to journeys stored in a customer journey store.Type: GrantFiled: December 16, 2020Date of Patent: March 26, 2024Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hao Chun Hung, Po-Cheng Chiu, Tsai-Hsuan Hsieh, Cheng-Lun Yang, Chiwen Chang, Shin Yu Wey
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Patent number: 11942130Abstract: A bottom-pinned spin-orbit torque magnetic random access memory (SOT-MRAM) is provided in the present invention, including a substrate, a bottom electrode layer on the substrate, a magnetic tunnel junction (MTJ) on the bottom electrode layer, a spin-orbit torque (SOT) layer on the MTJ, a capping layer on the SOT layer, and an injection layer on the capping layer, wherein the injection layer is divided into individual first part and second part, and the first part and the second part are connected respectively with two ends of the capping layer.Type: GrantFiled: March 23, 2022Date of Patent: March 26, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Jian-Jhong Chen, Yi-Ting Wu, Jen-Yu Wang, Cheng-Tung Huang, Po-Chun Yang, Yung-Ching Hsieh
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Publication number: 20240098183Abstract: A marking method on image combined with sound signal, a terminal apparatus, and a server are provided. In the method, a first image is displayed. A selection command is detected. A target sound signal is embedded into a speech signal so as to generate a combined sound signal. The combined sound signal is transmitted. The selection command corresponds to a target region in the first image, and the selection command is generated selecting the target region through an input operation. The target sound signal corresponds to the target region of the selection command, and the speech signal is obtained by receiving sound. Accordingly, all attendants in the video conference are able to make makings on a shared screen.Type: ApplicationFiled: November 21, 2022Publication date: March 21, 2024Applicant: Acer IncorporatedInventors: Po-Jen Tu, Ming-Chun Fang, Jia-Ren Chang, Kai-Meng Tzeng, Chao-Kuang Yang
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Patent number: 11903325Abstract: A memory device includes a substrate; an active area extending along a first direction on the substrate; a gate line traversing the active area and extending along a second direction that is not parallel to the first direction; a source doped region in the active area and on a first side of the gate line; a main source line extending along the first direction; a source line extension coupled to the main source line and extending along the second direction; a drain doped region in the active area and on a second side of the gate line that is opposite to the first side; and a data storage element electrically coupled to the drain doped region. The main source line is electrically connected to the source doped region via the source line extension.Type: GrantFiled: May 2, 2022Date of Patent: February 13, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yi-Ting Wu, Yan-Jou Chen, Cheng-Tung Huang, Jen-Yu Wang, Po-Chun Yang, Yung-Ching Hsieh, Jian-Jhong Chen, Bo-Chang Li
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Publication number: 20230343379Abstract: A sense amplifier circuit includes a sense amplifier, a switch and a temperature compensation circuit. The temperature compensation circuit provides a control signal having a positive temperature coefficient, based on which the switch provides reference impedance for temperature compensation. The sense amplifier includes a first input end coupled to a target bit and a second input end coupled to the switch. The sense amplifier outputs a sense amplifier signal based on the reference impedance and the impedance of the target bit.Type: ApplicationFiled: May 16, 2022Publication date: October 26, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Cheng-Tung Huang, Jen-Yu Wang, Po-Chun Yang, Yi-Ting Wu, Yung-Ching Hsieh, Jian-Jhong Chen, Chia-Wei Lee
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Publication number: 20230282260Abstract: A bottom-pinned spin-orbit torque magnetic random access memory (SOT-MRAM) is provided in the present invention, including a substrate, a bottom electrode layer on the substrate, a magnetic tunnel junction (MTJ) on the bottom electrode layer, a spin-orbit torque (SOT) layer on the MTJ, a capping layer on the SOT layer, and an injection layer on the capping layer, wherein the injection layer is divided into individual first part and second part, and the first part and the second part are connected respectively with two ends of the capping layer.Type: ApplicationFiled: March 23, 2022Publication date: September 7, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Jian-Jhong Chen, Yi-Ting Wu, Jen-Yu Wang, Cheng-Tung Huang, Po-Chun Yang, Yung-Ching Hsieh
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Publication number: 20230254968Abstract: Voids are introduced in a copper shape to reduce warpage experienced by a printed circuit board during a reflow process. Copper shapes on an outer layer of a printed circuit board may be used to connect large packages that include ball grid arrays to the printed circuit board. The copper shapes may induce warpage in the printed circuit board during the reflow process. Routing a mesh pattern of voids in the copper shapes may reduce solder ball joint cracking and pad cratering during reflow and make solder joints more reliable. The voids may make the copper shapes less ridged and change the copper heat dissipation profile to remove sharp warpage forces that cause solder joints to experience pad cratering. The voids may be 8 mil x 8 mil cuts or indentations in the copper shape.Type: ApplicationFiled: May 5, 2021Publication date: August 10, 2023Inventors: Benito Joseph RODRIGUEZ, Shu-Ming CHANG, Dillip Kumar DASH, Po Chun YANG, Juan-Yi WU
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Publication number: 20220384523Abstract: A MRAM circuit structure is provided in the present invention, with the unit cell composed of three transistors in series and four MTJs, wherein the junction between first transistor and third transistor is first node, the junction between second transistor and third transistor is second node, and the other ends of first transistor and third transistor are connected to a common source line. First MTJ is connected to second MTJ in series to form a first MTJ pair that connecting to the first node, and third MTJ is connected to fourth MTJ in series to form a second MTJ pair that connecting to the second node.Type: ApplicationFiled: July 7, 2021Publication date: December 1, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yi-Ting Wu, Cheng-Tung Huang, Jen-Yu Wang, Yung-Ching Hsieh, Po-Chun Yang, Jian-Jhong Chen, Bo-Chang Li
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Publication number: 20220263012Abstract: A memory device includes a substrate; an active area extending along a first direction on the substrate; a gate line traversing the active area and extending along a second direction that is not parallel to the first direction; a source doped region in the active area and on a first side of the gate line; a main source line extending along the first direction; a source line extension coupled to the main source line and extending along the second direction; a drain doped region in the active area and on a second side of the gate line that is opposite to the first side; and a data storage element electrically coupled to the drain doped region. The main source line is electrically connected to the source doped region via the source line extension.Type: ApplicationFiled: May 2, 2022Publication date: August 18, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yi-Ting Wu, Yan-Jou Chen, Cheng-Tung Huang, Jen-Yu Wang, Po-Chun Yang, Yung-Ching Hsieh, Jian-Jhong Chen, Bo-Chang Li
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Patent number: 11355695Abstract: A memory device includes a substrate; an active area extending along a first direction on the substrate; a gate line traversing the active area and extending along a second direction that is not parallel to the first direction; a source doped region in the active area and on a first side of the gate line; a main source line extending along the first direction; a source line extension coupled to the main source line and extending along the second direction; a drain doped region in the active area and on a second side of the gate line that is opposite to the first side; and a data storage element electrically coupled to the drain doped region. The main source line is electrically connected to the source doped region via the source line extension.Type: GrantFiled: April 19, 2020Date of Patent: June 7, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yi-Ting Wu, Yan-Jou Chen, Cheng-Tung Huang, Jen-Yu Wang, Po-Chun Yang, Yung-Ching Hsieh, Jian-Jhong Chen, Bo-Chang Li
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Patent number: 11238912Abstract: In an MRAM, each unit cell includes two non-volatile storage units, three N-type transistors and three P-type transistors. Each N-type transistor is coupled in parallel with a corresponding P-type transistor for forming a transmission gate which provides bi-directional current, thereby preventing source degeneration.Type: GrantFiled: January 11, 2021Date of Patent: February 1, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yi-Ting Wu, Cheng-Tung Huang, Jen-Yu Wang, Yung-Ching Hsieh, Po-Chun Yang, Jian-Jhong Chen, Bo-Chang Li
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Publication number: 20210410277Abstract: Voids are introduced in a copper shape to reduce warpage experienced by a printed circuit board during a reflow process. Copper shapes on an outer layer of a printed circuit board may be used to connect large packages that include ball grid arrays to the printed circuit board. The copper shapes may induce warpage in the printed circuit board during the reflow process. Routing a mesh pattern of voids in the copper shapes may reduce solder ball joint cracking and pad cratering during reflow and make solder joints more reliable. The voids may make the copper shapes less ridged and change the copper heat dissipation profile to remove sharp warpage forces that cause solder joints to experience pad cratering. The voids may be 8 mil×8 mil cuts or indentations in the copper shape.Type: ApplicationFiled: June 30, 2020Publication date: December 30, 2021Inventors: Benito Joseph RODRIGUEZ, Shu-Ming CHANG, Dillip Kumar DASH, Po Chun YANG, Juan-Yi WU
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Patent number: 11212912Abstract: Voids are introduced in a copper shape to reduce warpage experienced by a printed circuit board during a reflow process. Copper shapes on an outer layer of a printed circuit board may be used to connect large packages that include ball grid arrays to the printed circuit board. The copper shapes may induce warpage in the printed circuit board during the reflow process. Routing a mesh pattern of voids in the copper shapes may reduce solder ball joint cracking and pad cratering during reflow and make solder joints more reliable. The voids may make the copper shapes less ridged and change the copper heat dissipation profile to remove sharp warpage forces that cause solder joints to experience pad cratering. The voids may be 8 mil×8 mil cuts or indentations in the copper shape.Type: GrantFiled: June 30, 2020Date of Patent: December 28, 2021Assignee: Microsoft Technology Licensing, LLCInventors: Benito Joseph Rodriguez, Shu-Ming Chang, Dillip Kumar Dash, Po Chun Yang, Juan-Yi Wu
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Publication number: 20210313509Abstract: A memory device includes a substrate; an active area extending along a first direction on the substrate; a gate line traversing the active area and extending along a second direction that is not parallel to the first direction; a source doped region in the active area and on a first side of the gate line; a main source line extending along the first direction; a source line extension coupled to the main source line and extending along the second direction; a drain doped region in the active area and on a second side of the gate line that is opposite to the first side; and a data storage element electrically coupled to the drain doped region. The main source line is electrically connected to the source doped region via the source line extension.Type: ApplicationFiled: April 19, 2020Publication date: October 7, 2021Inventors: Yi-Ting Wu, Yan-Jou Chen, Cheng-Tung Huang, Jen-Yu Wang, Po-Chun Yang, Yung-Ching Hsieh, Jian-Jhong Chen, Bo-Chang Li
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Publication number: 20210183944Abstract: A layout pattern for magnetoresistive random access memory (MRAM) includes a first magnetic tunneling junction (MTJ) pattern on a substrate, a second MTJ pattern adjacent to the first MTJ pattern, and a third MTJ pattern between the first MTJ pattern and the second MTJ pattern. Preferably, the first MTJ pattern, the second MTJ pattern, and the third MTJ pattern constitute a staggered arrangement.Type: ApplicationFiled: January 20, 2020Publication date: June 17, 2021Inventors: Yi-Ting Wu, Jian-Jhong Chen, Po-Chun Yang, Jhen-Siang Wu, Yung-Ching Hsieh, Bo-Chang Li, Jen-Yu Wang, Cheng-Tung Huang
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Patent number: 11028109Abstract: The present disclosure provides a phosphorus-containing compound, which includes a structure represented by formula (I). Formula (I) is defined as in the specification. The present disclosure further provides a flame-retardant thermoset made by the phosphorus-containing compound including the structure represented by formula (I). The present disclosure also provides a manufacturing method for the phosphorus-containing compound.Type: GrantFiled: May 21, 2019Date of Patent: June 8, 2021Assignee: National Chunghsing UniversityInventors: Ching-Hsuan Lin, Yu-Hsiang Lin, Po-Chun Yang, Yi-Ning Chiang, Wen-Chang Chen
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Patent number: 11018185Abstract: A layout pattern for magnetoresistive random access memory (MRAM) includes a first magnetic tunneling junction (MTJ) pattern on a substrate, a second MTJ pattern adjacent to the first MTJ pattern, and a third MTJ pattern between the first MTJ pattern and the second MTJ pattern. Preferably, the first MTJ pattern, the second MTJ pattern, and the third MTJ pattern constitute a staggered arrangement.Type: GrantFiled: January 20, 2020Date of Patent: May 25, 2021Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yi-Ting Wu, Jian-Jhong Chen, Po-Chun Yang, Jhen-Siang Wu, Yung-Ching Hsieh, Bo-Chang Li, Jen-Yu Wang, Cheng-Tung Huang
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Patent number: 10978122Abstract: A memory includes (n?1) non-volatile cells, (n?1) bit lines and a current driving circuit. Each of the (n?1) non-volatile cells includes a first terminal and a second terminal. An ith bit line of the (n?1) bit lines is coupled to a first terminal of an ith non-volatile cell of the (n?1) non-volatile cells. The current driving circuit includes n first transistors coupled to the (n?1) non-volatile cells.Type: GrantFiled: February 21, 2020Date of Patent: April 13, 2021Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chun-Yen Tseng, Yu-Tse Kuo, Chang-Hung Chen, Shu-Ru Wang, Ya-Lan Chiou, Chun-Hsien Huang, Chih-Wei Tsai, Hsin-Chih Yu, Yi-Ting Wu, Cheng-Tung Huang, Jen-Yu Wang, Jhen-Siang Wu, Po-Chun Yang, Yung-Ching Hsieh, Jian-Jhong Chen, Bo-Chang Li