Abstract: Novel double- and triple-patterning methods are provided. The methods involve applying a shrinkable composition to a patterned template structure (e.g., a structure having lines) and heating the composition. The shrinkable composition is selected to possess properties that will cause it to shrink during heating, thus forming a conformal layer over the patterned template structure. The layer is then etched to leave behind pre-spacer structures, which comprise the features from the pattern with remnants of the shrinkable composition adjacent the feature sidewalls. The features are removed, leaving behind a doubled pattern. In an alternative embodiment, an extra etch step can be carried out prior to formation of the features on the template structure, thus allowing the pattern to be tripled rather than doubled.

Abstract: Provided is a method for compensating for tissue motion during magnetic resonance (MR) imaging, and an apparatus for use thereof. The method includes acquiring a plurality of short-time MR scan images; selecting a reference scan image from the acquired plurality of short-time MR scan images; defining a set of transformation images based on the acquired plurality of short-time MR scan images other than the selected reference scan image; registering the reference scan image and the defined set of transformation images; calculating an average of aligned, registered images of the defined set of transformation images; and generating a motion-corrected image based on the calculated average.

Abstract: The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.

Abstract: A method for calibrating large fixed electronic scale is provided. The method applies an auxiliary verification device to calibrate the large fixed electronic scale without using a weight and includes following steps of: loading and unloading every supporting point on the scale table board of the scale by at least one self-locating loading and unloading mechanism; measuring and displaying a load that each loading and unloading mechanisms applies to the scale table board by at least one high accuracy load gauge; controlling a size of the load that each loading and unloading mechanisms applies to the scale table board by a constant load control device; and comparing a precise load displayed by the high accuracy load gauge with a gauge weighing display value of the scale to obtain a calibration error of the scale. The present method greatly improves working efficiency and safety and reduces costs.

Abstract: Disclosed is a multilayer structure useful for preparing highly abrasion-resistant protective liners, including tubular articles such as multilayer tubes or pipes.

Abstract: The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.

Abstract: The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.

Abstract: A novel reversal lithography process without etch back is described. The reversal material comprises nanoparticles that are selectively deposited into the gaps between features without overcoating the tops of the features. As a result, a patterned imaging layer can be removed using solvent, blanket exposure followed by developer washing, or dry etching directly, without an etch-back process, and the original bright field lithography pattern can be reversed into dark field features, and transferred into subsequent layers using the nanoparticle reversal material as an etch mask.

Abstract: Radiation-sensitive sol-gel compositions are provided, along with methods of forming microelectronic structures and the structures thus formed. The compositions comprise a sol-gel compound and a base generator dispersed or dissolved in a solvent system. The sol-gel compound comprises recurring monomeric units comprising silicon with crosslinkable moieties bonded to the silicon. Upon exposure to radiation, the base generator generates a strong base, which crosslinks the sol-gel compound in the compositions to yield a crosslinked layer that is insoluble in developers or solvents. The unexposed portions of the layer can be removed to yield a patterned sol-gel layer. The invention can be used to form patterns from sol-gel materials comprising features having feature sizes of less than about 1 ?m.

Abstract: A reversal lithography approach is disclosed in which dark-field features are created on microelectronic substrates using bright-field lithography processes and a pattern reversal method. A wafer stack having a patterned imaging layer is provided that has a plurality of features formed thereon. A pattern reversal composition is applied to the patterned imaging layer overcoating the features, followed by wet etch-back of partially cured portions of the composition to expose the tops of the features. The imaging layer is then removed resulting in reversal of the pattern into the pattern reversal composition.

Abstract: A pipe or tube article comprising an innermost layer made from a grafted polyolefin composition is disclosed which can provide long lifetime, highly abrasion-resistant pipes for mining and other transportation uses. Methods for preparing the article and transporting abrasive materials through the article are also described.

Abstract: A pipe or tube article comprising an innermost comprising a grafted polyolefin composition made from a grafted polyolefin composition is disclosed which can provide long lifetime, highly abrasion-resistant pipes for mining and other transportation uses. Methods for preparing the article and transporting abrasive materials through the article are also described.

Abstract: This invention relates to a method for sealing film layers to form a sealed portion and a notch within the sealed portion, comprising: providing film layers between sealing jaws comprising a heat sealing element, with a sealing face having a length and a protrusion extending partly along the length of its sealing face; inducing a temperature gradient along the of sealing face length, wherein the temperature proximate to the protrusion is higher than at a distance from the protrusion; closing the jaws and simultaneously clamping the film at a location adjacent to the sealing face; holding the jaws closed for a period of time; and opening the jaws to release the layers of film.

Abstract: A method for calibrating large fixed electronic scale is provided. The method applies an auxiliary verification device to calibrate the large fixed electronic scale without using a weight and includes following steps of: loading and unloading every supporting point on the scale table board of the scale by at least one self-locating loading and unloading mechanism; measuring and displaying a load that each loading and unloading mechanisms applies to the scale table board by at least one high accuracy load gauge; controlling a size of the load that each loading and unloading mechanisms applies to the scale table board by a constant load control device; and comparing a precise load displayed by the high accuracy load gauge with a gauge weighing display value of the scale to obtain a calibration error of the scale. The present method greatly improves working efficiency and safety and reduces costs.

Abstract: Disclosed is a multilayer structure useful for preparing highly abrasion-resistant protective liners, including tubular articles such as multilayer tubes or pipes.

Abstract: Radiation-sensitive sol-gel compositions are provided, along with methods of forming microelectronic structures and the structures thus formed. The compositions comprise a sol-gel compound and a base generator dispersed or dissolved in a solvent system. The sol-gel compound comprises recurring monomeric units comprising silicon with crosslinkable moieties bonded to the silicon. Upon exposure to radiation, the base generator generates a strong base, which crosslinks the sol-gel compound in the compositions to yield a crosslinked layer that is insoluble in developers or solvents. The unexposed portions of the layer can be removed to yield a patterned sol-gel layer. The invention can be used to form patterns from sol-gel materials comprising features having feature sizes of less than about 1 ?m.

Abstract: This invention relates to a method for sealing film layers to form a sealed portion and a notch within the sealed portion, comprising: providing film layers between sealing jaws comprising a heat sealing element, with a sealing face having a length and a protrusion extending partly along the length of its sealing face; inducing a temperature gradient along the of sealing face length, wherein the temperature proximate to the protrusion is higher than at a distance from the protrusion; closing the jaws and simultaneously clamping the film at a location adjacent to the sealing face; holding the jaws closed for a period of time; and opening the jaws to release the layers of film.

Abstract: This invention relates to a heat sealing element for use in a heat sealing jaw in cooperation with an opposing backing jaw for sealing layers of film together to form a sealed portion and a notch within the sealed portion, the heat sealing element comprising: a sealing face for pressing the layers of film together against the opposing backing jaw and forming the sealed portion, the sealing face having a protrusion for forming the notch within the sealed portion; and a clamping portion adjacent to the sealing face, the clamping portion being disposed at an orientation diverging from a plane along which the layers of film are sealed together.

Abstract: A novel reversal lithography process without etch back is described. The reversal material comprises nanoparticles that are selectively deposited into the gaps between features without overcoating the tops of the features. As a result, a patterned imaging layer can be removed using solvent, blanket exposure followed by developer washing, or dry etching directly, without an etch-back process, and the original bright field lithography pattern can be reversed into dark field features, and transferred into subsequent layers using the nanoparticle reversal material as an etch mask.

Abstract: Methods of forming microelectronic structure are provided. The methods comprise the formation of T-shaped structures using a controlled undercutting process, and the deposition of a selectively etchable composition into the undercut areas of the T-shaped structures. The T-shaped structures are subsequently removed to yield extremely small undercut-formed features that conform to the width and optionally the height of the undercut areas of the T-shaped structures. These methods can be combined with other conventional patterning methods to create structures having extremely small feature sizes regardless of the wavelength of light used for patterning.