Abstract: A downhole injection system in selective communication with a wellhead assembly and a wellbore, the downhole injection system including a pumping chamber in selective communication with the wellhead assembly, the pumping chamber defining a wellhead pressure portion defining a wellhead pressure inlet in selective communication with the wellhead assembly and a wellhead pressure outlet in selective communication with the wellhead assembly, where the wellhead pressure portion is maintained at a wellhead pressure, and a chemical portion in selective communication with the wellbore, and a movable plate positioned within the pumping chamber, where the chemical portion is separated from the wellhead pressure portion by the movable plate.

Abstract: A display panel and a display apparatus are provided in the present disclosure.

Abstract: A display substrate includes a display area and a non-display area that surrounds the display area. The display area includes a plurality of scanning lines extending in a first direction and a plurality of sub-pixels arranged in an array, and the display area includes a first display area and a second display area, wherein the first display area is located at the periphery of the second display area, and the second display area comprises a light-transmitting display area and a transition display area; the transition display area is located on a side face of the light-transmitting display area.

Abstract: The present application provides a displaying base plate and a displaying device, wherein the displaying base plate includes a transparent displaying region and an effective displaying region, the transparent displaying region includes a plurality of scanning lines, each of the scanning lines includes one or more first light emitting regions, a driving electrode of each of the first light emitting regions is connected to a corresponding driving circuit via a transparent trace, the transparent traces connected to the driving electrodes of a same one instance of the scanning lines are located in a same one layer, the plurality of scanning lines include at least a pair of neighboring first scanning line and second scanning line, and the transparent traces connected to the driving electrodes of the first scanning line and the transparent traces connected to the driving electrodes of the second scanning line are located in different layers.

Abstract: Systems and methods for generating and using a water filtration media containing date seed powder are provided. The method of generating the date seed powder for use in a water treatment system includes drying the date seeds, cleaning and removing the date seed envelopes, grinding the date seeds, and segregating the date seed powder according to a predetermined particle size. The method of using the date seed powder to treat water includes using a treatment tank with a date seed media bed layer, introducing water, and filtering suspended solids from the water stream using the date seed media bed layer. The system utilizing the date seed media bed layer includes a treatment tank, a date seed media bed layer, water inlets and outlets, backwashing equipment, and media support screens.

Abstract: Provided are a display panel and a display device. The display panel includes: light-emitting elements and pixel circuits. The pixel circuits include a plurality of groups of pixel circuits; at least one group of pixel circuits includes a plurality of first-type pixel circuits and a plurality of second-type pixel circuits; at least one second-type pixel circuit is connected to at least one second region light-emitting element through one conductive line; the conductive lines include a plurality of first conductive wires and a plurality of second conductive wires; and in at least one group of light-emitting elements and at least one group of pixel circuits, a plurality of first pixel circuits connected to a plurality of first light-emitting elements are closer to a second display region than each of a plurality of second pixel circuits connected to a plurality of second light-emitting elements.

Abstract: The present application discloses an integrated structure of MOS transistors having different working voltages. A second spacer of a second MOS transistor having a middle second working voltage is formed by adding a third sub-spacer on the basis of a first spacer of a first MOS transistor having a relatively low first working voltage, and the first spacer is formed by stacking a first sub-spacer and a second sub-spacer. The thickness of the second spacer is adjusted via the third sub-spacer, so as to ensure that a GIDL leakage of the second MOS transistor under the second working voltage satisfies a requirement. The present application also discloses a method for manufacturing an integrated structure of MOS transistors having different working voltages.

Abstract: A method and system of providing seawater into a subterranean formation, including adding chloride salt having a metal cation to the seawater (having sulfate), precipitating sulfate salt (of the metal cation and sulfate), removing the sulfate salt as precipitated to give treated seawater having less sulfate than the seawater, and injecting the treated seawater into the subterranean formation.

Abstract: A downhole injection system in selective communication with a wellhead assembly and a wellbore, the downhole injection system including a pumping chamber in selective communication with the wellhead assembly, the pumping chamber defining a wellhead pressure portion defining a wellhead pressure inlet in selective communication with the wellhead assembly and a wellhead pressure outlet in selective communication with the wellhead assembly, where the wellhead pressure portion is maintained at a wellhead pressure, and a chemical portion in selective communication with the wellbore, and a movable plate positioned within the pumping chamber, where the chemical portion is separated from the wellhead pressure portion by the movable plate.

Abstract: Methods for reducing scale deposition are provided. An exemplary method for reducing scale in an oilfield facility includes contacting a metallic surface with a production fluid including a film-forming surfactant selected from imidazolines, imidazolidines, amidoamines, isoxazolidines, fatty amines, ?,?-unsaturated aldehydes, salts thereof, and combinations thereof, the production fluid including the film-forming surfactant in a concentration of at least about 200 ppm.

Abstract: A method and system of treatment with scale inhibitor, including adding scale inhibitor to source water to give injection water, conveying the injection water in a surface conduit to an injection well for injection into an oil reservoir in a subterranean formation, pumping the injection water through a wellbore of the injection well into the oil reservoir, obtaining a sample of the injection water (including suspended solids), and analyzing the suspended solids.

Abstract: Systems and methods for generating and using a water filtration media containing date seed powder are provided. The method of generating the date seed powder for use in a water treatment system includes drying the date seeds, cleaning and removing the date seed envelopes, grinding the date seeds, and segregating the date seed powder according to a predetermined particle size. The method of using the date seed powder to treat water includes using a treatment tank with a date seed media bed layer, introducing water, and filtering suspended solids from the water stream using the date seed media bed layer. The system utilizing the date seed media bed layer includes a treatment tank, a date seed media bed layer, water inlets and outlets, backwashing equipment, and media support screens.

Abstract: A method and system for corrosion control and scale control in water supply for injection, including specifying a corrosion inhibitor for squeeze treatment of a water supply well, specifying a scale inhibitor that can form a complex with the corrosion inhibitor, pumping the corrosion inhibitor and the scale inhibitor through a wellbore of the water supply well into an aquifer in a subterranean formation, forming the complex of the corrosion inhibitor and the scale inhibitor, and pumping water from the water supply well to an injection well for injection, the water including the scale inhibitor released from the complex in the aquifer and the corrosion inhibitor released from the complex in the aquifer.

Abstract: The present application provides a process method for improving reliability of a metal gate high-voltage device. Stacks layers formed over the gate oxide layer and spaced apart from each other. An SiCN layer is deposited to cover tops and sidewalls of the stack layers, and cover bottoms of slots between the stack layers. An HARP layer is deposited to covert the SiCN layer. The HARP layer over the stack layers and the slot regions is covered with a photoresist. Photolithography and etching are sequentially performed to open the HARP layer over the stack layers. The photoresist in the slot regions is reserved. The HARP layer over the stack layers outside the slot regions is removed. The operations are repeated for many times until the slot regions are filled with the HARP layer.

Abstract: The present invention provides a semiconductor structure for a split gate flash memory cell and a method of manufacturing the same. The split gate flash memory cell provided by the present invention at least includes a select gate and a floating gate formed on the substrate, one side of the select gate is formed with an isolation wall, and the floating gate is on the other side of the isolation wall. An ion implantation region is formed in an upper portion of the substrate below the isolation wall, wherein the ion implantation type of the ion implantation region is different from the ion implantation type of the substrate. The manufactured split gate flash memory cell can reduce the influence of the channel inversion region on the channel current, thereby improving the characteristics of the channel current of the flash cell and optimizing the device performance.

Abstract: The present invention provides a semiconductor structure for forming a CMOS image sensor. The semiconductor structure includes at least a photodiode formed in the substrate for collecting photoelectrons, and the photodiode has a pinning layer, a first doped region and a second doped region in order from top to bottom in a height direction of the substrate. The semiconductor structure further includes a third doped region located in the substrate corresponding to a laterally extending region of the second doped region. The first doped region has an ion doping concentration greater than the ion doping concentration of the second doped region, the ion doping concentration of the second doped region is greater than the ion doping concentration of the third doped region, and the third doped region is in contact with the second doped region after diffusion. The present invention also provides a method of manufacturing the above-described semiconductor structure.

Abstract: The present invention provides a semiconductor structure for forming a CMOS image sensor. The semiconductor structure includes at least a photodiode formed in the substrate for collecting photoelectrons, and the photodiode has a pinning layer, a first doped region and a second doped region in order from top to bottom in a height direction of the substrate. The semiconductor structure further includes a third doped region located in the substrate corresponding to a laterally extending region of the second doped region. The first doped region has an ion doping concentration greater than the ion doping concentration of the second doped region, the ion doping concentration of the second doped region is greater than the ion doping concentration of the third doped region, and the third doped region is in contact with the second doped region after diffusion. The present invention also provides a method of manufacturing the above-described semiconductor structure.

Abstract: Methods for reducing scale deposition are provided. An exemplary method for reducing scale in an oilfield facility includes contacting a metallic surface with a production fluid including a film-forming surfactant selected from imidazolines, imidazolidines, amidoamines, isoxazolidines, fatty amines, ?,?-unsaturated aldehydes, salts thereof, and combinations thereof, the production fluid including the film-forming surfactant in a concentration of at least about 200 ppm.

Abstract: Disclosed are a display substrate, a preparation method thereof, and a display device. The display substrate includes a display region and a bonding region on one side of the display region. The bonding region at least includes a lead area. The display region includes a plurality of data lines and a plurality of data fanout lines. The lead area includes a plurality of lead wires. Orthographic projections of the plurality of data lines and the plurality of data fanout lines on a plane of the display substrate are at least partially overlapped. A first end of at least one data fanout line is connected to the lead wire, and a second end of the at least one data fanout line extends in a direction away from the lead area, to be connected to the data line.

Abstract: An isolation trench structure for a backside illuminated CMOS image sensor is disclosed. Each pixel cell in the backside illuminated CMOS image sensor comprises a photodiode and a cell isolation trench structure. A first cell trench combination structure containing more than five first cell trenches is formed in each active area, the cell isolation trench structure is formed in the first cell trench of the first cell trench combination structure, and the first cell trench extends longitudinally through an N-type area of the photodiode or is located in the N-type area of the photodiode. In a plan view, first ends of all the first cell trenches converge toward the center of the active area, and second ends of all the first cell trenches diverge from each other toward the edge of the active area, so as to divide the active area into a plurality of active area subblocks.