Abstract: A transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED, comprises: forming micro-LEDs (202) on a laser-transparent original substrate (201), providing an anisotropic conductive layer (203) on a receiving substrate (204), bringing the micro-LEDs (202) into contact with the anisotropic conductive layer (203) on the receiving substrate (204), irradiating the original substrate (201) with laser from the original substrate side to lift-off the micro-LEDs (202) from the original substrate (201), and processing the anisotropic conductive layer (203), to electrically connect the micro-LEDs (202) with the pads (205?) on the receiving substrate (204).

Abstract: The present invention provides a method for manufacturing a fully wafer-level-packaged MEMS microphone and a microphone manufactured with the same, the method comprises: separately manufacturing a first packaging wafer, an MEMS microphone wafer and a second packaging wafer; performing wafer-to-wafer bonding for the three wafers to form a plurality of fully wafer-level-packaged MEMS microphone units; singulating the fully wafer-level-packaged MEMS microphone units to form a plurality of fully wafer-level-packaged MEMS microphones, which are fully packaged at wafer level and do not need any further process after die singulation. The method can improve cost-effectiveness, performance consistency, manufacturability, quality, scaling capability of the packaged MEMS microphone.

Abstract: A piezoelectric speaker and a method for forming the piezoelectric speaker are provided. The method includes: providing a piezoelectric actuator which includes a piezoelectric layer, a bottom electrode and a top electrode, wherein the bottom electrode and the top electrode are on two opposite surfaces of the piezoelectric layer; providing a speaker frame which includes a base and a bump structure on the base; forming a solder layer on a top surface of the bump structure; and combining the bottom electrode of the piezoelectric actuator with the speaker frame through the solder layer.

Abstract: A flat coil, a manufacturing method thereof and an electronic apparatus are disclosed. The manufacturing method comprises: rolling a metal foil lamination onto a carrier roller to form a foil rod, wherein the metal foil lamination includes at least one layer of metal foil; sliding the foil rod from the carrier roller; slicing the foil rod into thin disks; and processing the thin disks to form at least one flat coil. According to this disclosure, a new solution for a flat coil is proposed.

Abstract: A micro-LED transfer method, manufacturing method and display device are disclosed. The method comprises: coating conductive photoresist on a receiving substrate, wherein the conductive photoresist is positive-tone photoresist; bonding a carrier substrate with the receiving substrate via the conductive photoresist, wherein metal electrodes of micro-LEDs on the carrier substrate are aligned with electrodes on the receiving substrate and are bonded with the electrodes on the receiving substrate via the conductive photoresist, and the carrier substrate is a transparent substrate; selectively lifting-off micro-LEDs from the carrier substrate through laser lifting-off using a first laser; and separating the carrier substrate from the receiving substrate.

Abstract: The present invention discloses a MEMS device and electronic apparatus. The MEMS device comprises: a micro-LED; and a movable member, wherein the micro-LED is mounted on the movable member and is configured for moving with the movable member. According to an embodiment of this invention, the signal detection of a MEMS device can be simplified and/or the contents of signals produced by the MEMS device can be enriched.

Abstract: The present invention discloses a assembling method, a manufacturing method, an device and an electronic apparatus of flip-die. The method for assembling a flip-die, comprises: temporarily bonding the flip-die onto a laser-transparent first substrate, wherein bumps of the flip-die are located on the side of the flip-die opposite to the first substrate; aligning the bumps with pads on a receiving substrate; irradiating the original substrate with laser from the first substrate side to lift-off the flip-die from the first substrate; and attaching the flip-die on the receiving substrate. A faster assembly rate can be achieved by using the present invention. A smaller chip size can be achieved by using the present invention. A lower profile can be achieved by using the present invention.

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED comprises: forming micro-LEDs on a laser-transparent original substrate; irradiating the original substrate with laser from the original substrate side to lift-off the micro-LEDs from the original substrate; bring the micro-LEDs into contact with pads preset on a receiving substrate through a contactless action.

Abstract: The present invention discloses a capacitive MEMS microphone and an electronic apparatus. The capacitive MEMS microphone comprises: a diaphragm; and a substrate, wherein a cavity is formed between the diaphragm and the substrate, and the cavity is filed with an elastic body. According to an embodiment of this invention, an elastic body is adopted in a capacitive MEMS microphone to replace the air gap of the prior art such that the SNR of the microphone is increased.

Abstract: The disclosure provides a MEMS device. The MEMS device comprises a printed circuit board, a cover attached to the printed circuit board to form a housing, at least one sound hole formed in the housing, a transducer with a diaphragm inside the housing, and at least one shutter structure. Each shutter structure is mounted to the housing around a respective sound hole. Each shutter structure comprises a moveable component disposed near the inner surface of the housing, the moveable component remains at an open position under regular pressure such that an air flow path from the sound hole to the at least one ventilation hole of the substrate across the moveable component is opened, and moves to a first closed position under a high external pressure to block the at least one ventilation hole and close the air flow path.

Abstract: The present invention discloses a monolithic integration device and micro Total Analysis System. The monolithic integration device for sensing comprises: a micro-LED; an optical detector; and a sensing channel, wherein the micro-LED is coupled with the sensing channel and is configured for emitting light into the sensing channel, and the optical detector is coupled with the sensing channel and is configured for sensing the light which is emitted by the micro-LED and travels through at least one part of the sensing channel. An embodiment of this invention proposes a new monolithic integration device for sensing with built-in light source and optical detection system.

Abstract: A transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED (402) are disclosed. The method for transferring micro-LED (402) comprises: transferring at least one micro-LED (402) from an original substrate (406) to a support body (412); transferring the at least one micro-LED (402) from the support body (412) to a backup substrate (415); and transferring the at least one micro-LED (402) from the backup substrate (415) to a receiving substrate (417).

Abstract: A micro-LED (3r) transfer method and a manufacturing method are disclosed. The micro-LED (3r) transfer method comprises: forming a sacrificial post (4) on a micro-LED (3r) to be picked-up on a carrier substrate (1); bonding the micro-LED (3r) to be picked-up with a pickup substrate (5) via the sacrificial post (4); lifting-off the micro-LED (3r) to be picked-up from the carrier substrate (1); bonding the micro-LED (3r) on the pickup substrate (5) with a receiving substrate (12); and lifting-off the micro-LED (3r) from the pickup substrate (5). A complicated pickup head is not necessary, and the technical solution is relatively simple.

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronics apparatus of micro-LED. The method for transferring micro-LEDs comprises: forming a mask layer on the backside of a laser-transparent original substrate, wherein micro-LEDs are formed on the front-side of the original substrate; bringing the micro-LEDs on the original substrate in contact with preset pads on a receiving substrate; and irradiating the original substrate from the original substrate side with laser through the mask layer, to lift-off micro-LEDs from the original substrate.

Abstract: A pre-screening method, manufacturing method, device and electronic apparatus of micro-LED. The method for pre-screening defect micro-LEDs comprises: obtaining a defect pattern of defect micro-LEDs on a laser-transparent substrate (S6100); and irradiating the laser-transparent substrate with laser from the laser-transparent substrate side in accordance with the defect pattern (S6200), to lift-off the defect micro-LEDs from the laser-transparent substrate.

Abstract: The present invention discloses a repairing method, manufacturing method, device and electronics apparatus of micro-LED. The method for repairing a micro-LED comprises: bringing a known-good micro-LED on a conductive pick-up head into contact with a first pad on an defective position of a receiving substrate, wherein the conductive pick-up head and the known-good micro-LED are bonded via a conductive adhesive; locally joule heating a first bonding layer through the conductive pick-up head, to melt the first bonding layer, wherein the first bonding layer is provided between the known-good micro-LED and the first pad; and lifting up the conductive pick-up head after the first bonding layer is cooled, leaving the known-good micro-LED on the receiving substrate.

Abstract: A micro-LED transfer method and a manufacturing method are disclosed. The micro-LED transfer method comprises: coating a sacrificial layer on a carrier substrate, wherein micro-LEDs are bonded on the carrier substrate through a first bonding layer (S1100); patterning the sacrificial layer to expose micro-LEDs to be picked up (S1200); bonding the micro-LEDs to be picked up with a pickup substrate through a second bonding layer (S1300); removing the sacrificial layer by undercutting (S1400); lifting-off the micro-LEDs to be picked up from the carrier substrate (S1500); bonding the micro-LEDs on the pickup substrate with a receiving substrate through a third bonding layer (S1600); and lifting-off the micro-LEDs from the pickup substrate (S1700).

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronics apparatus of micro-LED. The method for transferring micro-LED at wafer level comprises: temporarily bonding micro-LEDs on a laser-transparent original substrate onto a carrier substrate via a first bonding layer; irradiating the original substrate with laser, to lift-off selected micro-LEDs; performing a partial release on the first bonding layer, to transfer the selected micro-LEDs to the carrier substrate; temporarily bonding the micro-LEDs on the carrier substrate onto a transfer head substrate via a second bonding layer; performing a full release on the first bonding layer, to transfer the micro-LEDs to the transfer head substrate; bonding the micro-LEDs on the transfer head substrate onto a receiving substrate; and removing the transfer head substrate by releasing the second bonding layer, to transfer the micro-LEDs to the receiving substrate.

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED comprises: forming micro-LEDs on a laser-transparent original substrate, wherein the micro-LEDs are lateral micro-LEDs whose P electrodes and N electrodes are located on one side; bringing the P electrodes and N electrodes of the lateral micro-LEDs into contact with pads preset on a receiving substrate; and irradiating the original substrate with laser from the original substrate side to lift-off the lateral micro-LEDs from the original substrate. A technical effect of using lateral micro-LEDs lies in that the processing for N metal electrode after the micro-LED transfer can be omitted.

Abstract: A MEMS multi-module assembly, manufacturing method, and electronics apparatus are disclosed herein. The MEMS multi-module assembly comprises: a first die having a first hole; and a second die stacked on the first die, having a second MEMS device, wherein the second MEMS device is connected outside via the first hole.