Abstract: The present invention is related to agents capable of binding to and inhibiting or antagonizing the action of IL-11 and/or or IL-11RA for the treatment and/or prevention of abnormal uterine bleeding, which comprises heavy menstrual bleeding, prolonged bleeding, altered bleeding pattern, dysmenorrhea, as well as of the underlying diseases leiomyoma and endometriosis and the use of the agent to inhibit menstruation. Furthermore, the invention provides novel IL-11 antibodies.

Abstract: A method for producing a capsule, includes providing a base body made of a plastic and having a base region, a circumferential side wall, and a circumferential base body flange adjacent to the circumferential side wall; providing a cover made of a plastic; filling the base body with an extraction material; placing the cover on the base body so that a fastening portion of the cover contacts the base body flange, and fastening the cover flange to the base body flange by ultrasonic welding. When fastening the cover flange, an inner surface of the fastening section makes contact with a flange surface of the base body flange. A sonotrode having mechanical vibrations applied thereto is pressed against an outer surface of the fastening section or of the base body flange, and mechanical vibrations liquefy plastic material of the cover or of the base body flange.

Abstract: An SiC volume monocrystal is processed by sublimation growth. An SiC seed crystal is placed in a crystal growth region of a growing crucible and SiC source material is introduced into an SiC storage region. During growth, at a growth temperature of up to 2,400° C. and a growth pressure between 0.1 mbar and 100 mbar, an SiC growth gas phase is generated by sublimation of the SiC source material and by transport of the sublimated gaseous components into the crystal growth region, where an SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. A mechanical stress is introduced into the SiC seed crystal at room temperature prior to the start of the growth to cause seed screw dislocations present in the SiC seed crystal to undergo a dislocation movement so that seed screw dislocations recombine.

Abstract: A SiC volume monocrystal is produced by sublimation growth. An SiC seed crystal is placed in a crystal growth region of a growing crucible and SiC source material is introduced into an SiC storage region. During growth, at a growth temperature of up to 2,400° C. and a growth pressure between 0.1 mbar and 100 mbar, an SiC growth gas phase is generated by sublimation of the SiC source material and by transport of the sublimated gaseous components into the crystal growth region, where an SiC volume monocrystal grows by deposition from the SiC growth gas phase on the SiC seed crystal. Prior to the start of growth, the SiC seed crystal is examined at the growth surface for the presence of seed screw dislocations, nucleation centers are generated, wherein the nucleation centers are starting points for at least one compensation screw dislocation during the growth carried out subsequently.

Abstract: A prime mover, such as a tractor, is disclosed. The prime mover includes a drivetrain, a driver assistance system, and a tire pressure control system. The tire pressure control system is equipped with pneumatic components for setting and adapting a tire pressure of at least one of the tires of the prime mover and an attachment to the prime mover. The drivetrain includes at least one drive motor, one gearbox, at least one power take-off, and at least one ancillary unit. The driver assistance system controls the tire pressure control system and includes a computing unit, a memory unit, and an input/output unit. In particular, the driver assistance system includes an automatic tire pressure controller that operates based on a characteristic curve and is configured for optimized control of the tire pressure control system depending on selectable control strategies and/or optimization target variables.

Abstract: The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at maximum 5·1018 cm?3, preferably 1·1018 cm?3, from the mean concentration of this dopant in the peripheral region (104).

Abstract: A system including circuitry configured to process image data of a meal to obtain information on the contents of the meal; generate, based on the obtained information, a query with guidance to change image capture settings: and guide a user to pick up at least a part of the meal.

Abstract: The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at least 1·1018 cm?3 from the mean concentration of this dopant in the peripheral region (104).

Abstract: The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at least 1-1018 cm-3 from the mean concentration of this dopant in the peripheral region (104).

Abstract: The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.

Abstract: An arrangement for operating a biosensor emitting radiation includes an excitation light source, which generates at least one excitation radiation for the biosensor; a coupling fiber, at the entry surface of which the excitation radiation is coupled in; an optical Y-coupler, including an excitation arm, which is connected to the exit surface of the coupling fiber, a detector arm, which is connected to an optical detector, and a sensor foot, which can be connected to the biosensor. The excitation arm has a conical shape. The radiation axis of the excitation arm includes an angle in the range of 5° to 70° with the main radiation axis of the detector arm. The diameter of the excitation arm at the connecting point to the detector arm is less than two thirds the diameter of the detector arm. An arrangement for determining the glucose content blood is also provided.

Abstract: Two workpieces 30, 40 are joined by means of ultrasound. First, a workpiece 30 with at least one energy direction sensor 31 and a second workpiece 40 are provided. The workpieces are brought into contact with each other in such a way that the energy direction sensor 31 comes into contact with a first surface 41 of the second workpiece 40. Ultrasonic vibrations are then introduced into one of the workpieces 40 via a working surface 11 of a sonotrode 10. A sonotrode 10 is used, which has a contour with contact lines 12 on the working surface 11. The sonotrode 10 is positioned with respect to the first workpiece 30 in such a way that the contact lines 12 run transversely to the energy direction generator 31.

Abstract: The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.

Abstract: A system including circuitry configured to determine a reflectance feature of a liquid based on reflectance image data generated based on multispectral image data of the liquid; determine a structural feature of the liquid based on image data of the liquid; and to provide quality information of the liquid based on the reflectance feature and the structural feature.

Abstract: The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at maximum 5·1018 cm?3, preferably 1·1018 cm?3, from the mean concentration of this dopant in the peripheral region (104).

Abstract: The present invention relates to a silicon carbide (SiC) substrate with improved mechanical and electrical characteristics. Furthermore, the invention relates to a method for producing a bulk SiC crystal in a physical vapor transport growth system. The silicon carbide substrate comprises an inner region (102) which constitutes at least 30% of a total surface area of said substrate (100), a ring shaped peripheral region (104) radially surrounding the inner region (102), wherein a mean concentration of a dopant in the inner region (102) differs by at maximum 5·1018 cm?3, preferably 1·1018 cm?3, from the mean concentration of this dopant in the peripheral region (104).

Abstract: A system including circuitry configured to process multispectral image data of a meal to obtain information on the contents of the meal; and generate, based on the obtained information, a query with guidance to change image capture settings.

Abstract: A system including circuitry configured to process multispectral image data of a meal to obtain information on the contents of the meal; and generate, based on the obtained information, a query with guidance to change image capture settings.

Abstract: A prime mover, such as a tractor, is disclosed. The prime mover includes a drivetrain, a driver assistance system, and a tire pressure control system. The tire pressure control system is equipped with pneumatic components for setting and adapting a tire pressure of at least one of the tires of the prime mover and an attachment to the prime mover. The drivetrain includes at least one drive motor, one gearbox, at least one power take-off, and at least one ancillary unit. The driver assistance system controls the tire pressure control system and includes a computing unit, a memory unit, and an input/output unit. In particular, the driver assistance system includes an automatic tire pressure controller that operates based on a characteristic curve and is configured for optimized control of the tire pressure control system depending on selectable control strategies and/or optimization target variables.

Abstract: The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. The silicon carbide substrate (100) comprises a main surface (102) and a circumferential end face surface (114) which is essentially perpendicular to the main surface (102), and a chamfered peripheral region (110), wherein a first bevel surface (106) of the chamfered peripheral region (110) includes a first bevel angle (a1) with said main surface (102), and wherein a second bevel surface (108) of the chamfered peripheral region (110) includes a second bevel angle (a2) with said end face surface (114), wherein, in more than 75% of the peripheral region, said first bevel angle (a1) has a value in a range between 20° and 50°, and said second bevel angle (a2) has a value in a range between 45° and 75°.