Abstract: Disclosed is an asymmetric field effect transistor which comprises a first region serving as source, a second region serving as drain, a thin gate oxide and a gate electrode. The gate electrode is asymmetric and one of its sidewalls is sloped. The second region extends underneath said sloped sidewall. The part of said second region which extends underneath said gate electrode is less doped than the remaining part of said second region. Furthermore, said second region has a sloped junction edge underneath said gate electrode.

Abstract: A photomask and a method for using the photomask to make dimensionally controlled resist patterns are provided. A wafer having a resist coating thereon is exposed using the mask of the invention under specially controlled defocus conditions to provide the dimensionally controlled resist pattern profile. The mask which comprises multiple phase shifter means on one side of at least one of the light shielding patterns on the mask provides light passing through the mask having multiple phases on that side of the light shielding material which produces a dimensionally controlled resist pattern profile.