Patents by Inventor Regina Freed
Regina Freed has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240027916Abstract: Embodiments disclosed herein include a method of monitoring a photoresist deposition process. In an embodiment, the method comprises depositing a photoresist layer to a first thickness over a substrate, measuring a property of the photoresist layer with a first electromagnetic (EM) radiation source, depositing the photoresist layer to a second thickness over the substrate, and measuring the property of the photoresist layer with the first EM radiation source.Type: ApplicationFiled: May 16, 2023Publication date: January 25, 2024Inventors: RUIYING HAO, TODD EGAN, EDWARD BUDIARTO, PAOLA DE CECCO, REGINA FREED, BEKELE WORKU, MADHUR SACHAN, LUISA BOZANO, KELVIN CHAN
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Patent number: 11869807Abstract: Apparatuses and methods to provide fully self-aligned first metallization lines, M1, via, and second metallization lines, M2, are described. A first metallization line comprises a set of first conductive lines extending along a first direction on a first insulating layer on a substrate; a second metallization line comprising a set of second conductive lines on an etch stop layer above the first metallization line, the set of second conductive lines extending along a second direction that crosses the first direction at an angle; and at least one via between the first metallization line and the second metallization line, the at least one via comprising a via metallization layer, wherein the at least one via is self-aligned along the second direction to one of the first metallization lines and the at least one via is self-aligned along the first direction to one of the second metallization lines, the second direction crossing the first direction at an angle.Type: GrantFiled: June 1, 2021Date of Patent: January 9, 2024Assignee: Applied Materials, Inc.Inventors: Lili Feng, Yuqiong Dai, Madhur Sachan, Regina Freed, Ho-yung David Hwang
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Publication number: 20230290646Abstract: Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.Type: ApplicationFiled: May 17, 2023Publication date: September 14, 2023Inventors: Lakmal Charidu Kalutarage, Mark Joseph Saly, Bhaskar Jyoti Bhuyan, Madhur Sachan, Regina Freed
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Patent number: 11705366Abstract: Methods of etching a metal layer and a metal-containing barrier layer to a predetermined depth are described. In some embodiments, the metal layer and metal-containing barrier layer are formed on a substrate with a first dielectric and a second dielectric thereon. The metal layer and the metal-containing barrier layer formed within a feature in the first dielectric and the second dielectric. In some embodiments, the metal layer and metal-containing barrier layer can be sequentially etched from a feature formed in a dielectric material. In some embodiments, the sidewalls of the feature formed in a dielectric material are passivated to change the adhesion properties of the dielectric material.Type: GrantFiled: June 11, 2021Date of Patent: July 18, 2023Assignee: Micromaterials LLCInventors: He Ren, Amrita B. Mullick, Regina Freed, Mehul Naik, Uday Mitra
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Publication number: 20230215736Abstract: Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.Type: ApplicationFiled: March 2, 2023Publication date: July 6, 2023Inventors: Lakmal Charidu Kalutarage, Mark Joseph Saly, Bhaskar Jyoti Bhuyan, Madhur Sachan, Regina Freed
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Patent number: 11621172Abstract: Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.Type: GrantFiled: June 15, 2021Date of Patent: April 4, 2023Assignee: Applied Materials, Inc.Inventors: Lakmal Charidu Kalutarage, Mark Joseph Saly, Bhaskar Jyoti Bhuyan, Madhur Sachan, Regina Freed
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Publication number: 20220367270Abstract: Methods of forming and processing semiconductor devices which utilize a three-color process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts utilizing the formation of self-aligned growth pillars. The pillars lead to taller gate heights and increased margins against shorting defects.Type: ApplicationFiled: July 26, 2022Publication date: November 17, 2022Applicant: Micromaterials LLCInventors: Yuriy Shusterman, Madhur Sachan, Susmit Singha Roy, Regina Freed, Sanjay Natarajan
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Publication number: 20220359289Abstract: Apparatuses and methods to provide a fully self-aligned via are described. A first metallization layer comprises a set of first conductive lines extending along a first direction on a first insulating layer on a substrate, the set of first conductive lines recessed below a top portion of the first insulating layer. A capping layer is on the first insulating layer, and a second insulating layer is on the capping layer. A second metallization layer comprises a set of second conductive lines on the second insulating layer and on a third insulating layer above the first metallization layer. The set of second conductive lines extend along a second direction that crosses the first direction at an angle. At least one via is between the first metallization layer and the second metallization layer. The via is self-aligned along the second direction to one of the first conductive lines. The tapering angle of the via opening may be in a range of from about 60° to about 120°.Type: ApplicationFiled: July 26, 2022Publication date: November 10, 2022Applicant: Micromaterials LLCInventors: Regina Freed, Madhur Sachan, Susmit Singha Roy, Gabriela Alva, Ho-yung David Hwang, Uday Mitra, El Mehdi Bazizi, Angada Bangalore Sachid, He Ren, Sushant Mittal
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Patent number: 11437273Abstract: Methods of forming and processing semiconductor devices which utilize a three-color process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts utilizing the formation of self-aligned growth pillars. The pillars lead to taller gate heights and increased margins against shorting defects.Type: GrantFiled: February 24, 2020Date of Patent: September 6, 2022Assignee: Micromaterials LLCInventors: Yuriy Shusterman, Madhur Sachan, Susmit Singha Roy, Regina Freed, Sanjay Natarajan
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Patent number: 11437274Abstract: Apparatuses and methods to provide a fully self-aligned via are described. A first metallization layer comprises a set of first conductive lines extending along a first direction on a first insulating layer on a substrate, the set of first conductive lines recessed below a top portion of the first insulating layer. A capping layer is on the first insulating layer, and a second insulating layer is on the capping layer. A second metallization layer comprises a set of second conductive lines on the second insulating layer and on a third insulating layer above the first metallization layer. The set of second conductive lines extend along a second direction that crosses the first direction at an angle. At least one via is between the first metallization layer and the second metallization layer. The via is self-aligned along the second direction to one of the first conductive lines. The tapering angle of the via opening may be in a range of from about 60° to about 120°.Type: GrantFiled: September 14, 2020Date of Patent: September 6, 2022Assignee: Micromaterials LLCInventors: Regina Freed, Madhur Sachan, Susmit Singha Roy, Gabriela Alva, Ho-yung David Hwang, Uday Mitra, El Mehdi Bazizi, Angada Bangalore Sachid, He Ren, Sushant Mittal
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Publication number: 20220197146Abstract: Embodiments include a method of forming a metal oxo photoresist on a substrate. In an embodiment, the method comprises providing a target in a vacuum chamber, where the target comprises a metal. The method may continue with flowing a hydrocarbon gas and an inert gas into the vacuum chamber, and striking a plasma in the vacuum chamber. In an embodiment, the method further continues with depositing the metal oxo photoresist on the substrate, where the metal oxo photoresist comprise metal-carbon bonds and metal-oxygen bonds.Type: ApplicationFiled: September 1, 2021Publication date: June 23, 2022Inventors: Lauren Bagby, Stephen Weeks, Aaron Dangerfield, Lakmal Kalutarage, Jeffrey Anthis, Mark Saly, Regina Freed, Wayne French, Kelvin Chan
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Patent number: 11232955Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.Type: GrantFiled: March 26, 2020Date of Patent: January 25, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Amrita B. Mullick, Abhijit Basu Mallick, Srinivas Gandikota, Susmit Singha Roy, Yingli Rao, Regina Freed, Uday Mitra
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Publication number: 20220013624Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments relate to the formation of self-aligned DRAM capacitors. More particularly, certain embodiments relate to the formation of self-aligned DRAM capacitors utilizing the formation of self-aligned growth pillars. The pillars lead to greater capacitor heights, increase critical dimension uniformity, and self-aligned bottom and top contacts.Type: ApplicationFiled: September 28, 2021Publication date: January 13, 2022Applicant: Micromaterials LLCInventors: Uday Mitra, Regina Freed, Ho-yung David Hwang, Sanjay Natarajan, Lequn Liu
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Publication number: 20220002869Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method for forming a photoresist layer over a substrate in a vacuum chamber comprises providing a metal precursor vapor into the vacuum chamber. In an embodiment, the method further comprises providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. In an embodiment, the photoresist layer is a metal oxo containing material.Type: ApplicationFiled: June 17, 2021Publication date: January 6, 2022Inventors: Lakmal Charidu Kalutarage, Aaron Dangerfield, Mark Joseph Saly, David Michael Thompson, Susmit Singha Roy, Regina Freed
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Publication number: 20220002882Abstract: Embodiments disclosed herein include methods of developing a metal oxo photoresist. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a vacuum chamber, where the metal oxo photoresist comprises exposed regions and unexposed regions. In an embodiment, the unexposed regions comprise a higher carbon concentration than the exposed regions. The method may further comprise vaporizing a halogenating agent into the vacuum chamber, where the halogenating agent reacts with either the unexposed regions or the exposed regions to produce a volatile byproduct. In an embodiment, the method may further comprise purging the vacuum chamber.Type: ApplicationFiled: June 15, 2021Publication date: January 6, 2022Inventors: Lakmal Charidu Kalutarage, Mark Joseph Saly, Bhaskar Jyoti Bhuyan, Madhur Sachan, Regina Freed
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Publication number: 20220004105Abstract: Embodiments disclosed herein include a method of developing a metal oxo photoresist with a non-wet process. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a chamber. In an embodiment, the metal oxo photoresist comprises exposed regions and unexposed regions, and the unexposed regions comprise a higher carbon concentration than the exposed regions. In an embodiment, the method further comprises flowing a gas into the chamber, wherein the gas reacts with the unexposed regions to produce a volatile byproduct.Type: ApplicationFiled: June 16, 2021Publication date: January 6, 2022Inventors: Yuqiong Dai, Madhur Sachan, Regina Freed, Hoyung David Hwang
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Patent number: 11217448Abstract: Disclosed are methods for reducing transfer pattern defects in a semiconductor device. In some embodiments, a method includes providing a semiconductor device including a plurality of photoresist lines on a stack of layers, wherein the plurality of photoresist lines includes a bridge defect extending between two or more photoresist lines of the plurality of photoresist lines. The method may further include forming a plurality of mask lines by etching a set of trenches in a first layer of the stack of layers, and removing the bridge defect by etching the bridge defect at a non-zero angle of inclination with respect to a perpendicular to a plane of an upper surface of the stack of layers.Type: GrantFiled: July 30, 2020Date of Patent: January 4, 2022Assignee: APPLIED Materials, Inc.Inventors: Regina Freed, Steven R. Sherman, Nadine Alexis, Lin Zhou
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Publication number: 20210391215Abstract: Apparatuses and methods to provide fully self-aligned first metallization lines, M1, via, and second metallization lines, M2, are described. A first metallization line comprises a set of first conductive lines extending along a first direction on a first insulating layer on a substrate; a second metallization line comprising a set of second conductive lines on an etch stop layer above the first metallization line, the set of second conductive lines extending along a second direction that crosses the first direction at an angle; and at least one via between the first metallization line and the second metallization line, the at least one via comprising a via metallization layer, wherein the at least one via is self-aligned along the second direction to one of the first metallization lines and the at least one via is self-aligned along the first direction to one of the second metallization lines, the second direction crossing the first direction at an angle.Type: ApplicationFiled: June 1, 2021Publication date: December 16, 2021Applicant: Applied Materials, Inc.Inventors: Lili Feng, Yuqiong Dai, Madhur Sachan, Regina Freed, Ho-yung David Hwang
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Patent number: 11164938Abstract: Methods of forming and processing semiconductor devices are described. Certain embodiments relate to the formation of self-aligned DRAM capacitors. More particularly, certain embodiments relate to the formation of self-aligned DRAM capacitors utilizing the formation of self-aligned growth pillars. The pillars lead to greater capacitor heights, increase critical dimension uniformity, and self-aligned bottom and top contacts.Type: GrantFiled: March 23, 2020Date of Patent: November 2, 2021Assignee: Micromaterials LLCInventors: Uday Mitra, Regina Freed, Ho-yung David Hwang, Sanjay Natarajan, Lequn Liu
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Publication number: 20210305091Abstract: Methods of etching a metal layer and a metal-containing barrier layer to a predetermined depth are described. In some embodiments, the metal layer and metal-containing barrier layer are formed on a substrate with a first dielectric and a second dielectric thereon. The metal layer and the metal-containing barrier layer formed within a feature in the first dielectric and the second dielectric. In some embodiments, the metal layer and metal-containing barrier layer can be sequentially etched from a feature formed in a dielectric material. In some embodiments, the sidewalls of the feature formed in a dielectric material are passivated to change the adhesion properties of the dielectric material.Type: ApplicationFiled: June 11, 2021Publication date: September 30, 2021Applicant: Micromaterials LLCInventors: He Ren, Amrita B. Mullick, Regina Freed, Mehul Naik, Uday Mitra