Abstract: This invention has enabled a new, simple nanoporous dielectric fabrication method. In general, this invention uses a polyol, such as glycerol, as a solvent. This new method allows both bulk and thin film aerogels to be made without supercritical drying, freeze drying, or a surface modification step before drying. Prior art aerogels have required at least one of these steps to prevent substantial pore collapse during drying. Thus, this invention allows production of nanoporous dielectrics at room temperature and atmospheric pressure, without a separate surface modification step. Although not required to prevent substantial densification, this new method does not exclude the use of supercritical drying or surface modification steps prior to drying. In general, this new method is compatible with most prior art aerogel techniques. Although this new method allows fabrication of aerogels without substantial pore collapse during drying, there may be some permanent shrinkage during aging and/or drying.

Abstract: Our wafer scale processing techniques produce chip-laser-diodes with a diffraction grating (78) that redirects output light out the top (88) and/or bottom surfaces. Generally, a diffraction grating (78) and integrated lens-grating (78) are used herein to couple light from the chip to an output fiber (74), and the lens-grating (78) is spaced from the diffraction grating (76). Preferably the diffraction grating (76) and integrated lens grating (78) are also used to couple light from the output fiber (74) back to the active region of the chip. The integrated lens-grating (78) can be in a coupling block (82). The use of a coupling block (82) can eliminate “facet-type damage”. A coupling block (82) is generally used herein to couple light from the chip to an output fiber (74), and preferably to couple feedback reflected from the fiber (74) back to the chip.

Abstract: Wafer scale processing techniques produce chip-laser-diodes with an active region (62) and a diffraction grating (76) that redirects output light out the top and/or bottom surfaces. The diffraction grating (76) redirects a novel feedback from the optical output (e.g., fiber (74)) to produce lasing that self-aligns itself to the fiber input, reducing assembly costs. Preferably, a diffraction grating (76) and integrated lens-grating are used herein to couple light from the chip to an output fiber (74), and the lens-grating is spaced from the diffraction grating (76). Combination grating and additional gratings and/or integrated lenses on the top or bottom of the diode can also be made utilizing wafer scale processes.

Abstract: A method and apparatus are provided for fluid purification. A charged species from the fluid using, e.g., a Lorentz force. This creates a voltage, e.g., a Hall voltage that counteracts separation of the charged species from the fluid. This voltage is then discharged.

Abstract: This invention has enabled a new, simple thin film nanoporous dielectric fabrication method. In general, this invention uses glycerol, or another low volatility compound, as a solvent. This new method allows thin film aerogels/low density xerogels to be made without supercritical drying, freeze drying, or a surface modification step before drying. Thus, this invention allows production of nanoporous dielectrics at room temperature and atmospheric pressure, without a separate surface modification step. Although this new method allows fabrication of aerogels without substantial pore collapse during drying, there may be some permanent shrinkage during aging and/or drying. This invention allows controlled porosity thin film nanoporous aerogels to be deposited, gelled, aged, and dried without atmospheric controls.

Abstract: This invention has enabled a new, simple thin film nanoporous dielectric fabrication method. In general, this invention uses glycerol, or another low volatility compound, as a solvent. This new method allows thin film aerogels/low density xerogels to be made without supercritical drying, freeze drying, or a surface modification step before drying. Prior art aerogels have required at least one of these steps to prevent substantial pore collapse during drying. Thus, this invention allows production of nanoporous dielectrics at room temperature and atmospheric pressure, without a separate surface modification step. In general, this new method is compatible with most prior art aerogel techniques. Although this new method allows fabrication of aerogels without substantial pore collapse during drying, there may be some permanent shrinkage during aging and/or drying. This invention allows controlled porosity thin film nanoporous aerogels to be deposited, gelled, aged, and dried without atmospheric controls.

Abstract: This is a diode-laser chip that utilizes a very low feedback. It utilizes a manufacturable grating that couples output light “vertically” out of a horizontal, active-region-containing core, and can minimize reflections that would cause loss and noise. This coupling grating can also feed back synchronizing light into the active region, while reducing the stray reflections that would cause the diode to produce light at unwanted frequencies. The angle of an external (e.g., partially reflecting) mirror provides light wavelength tuning and the mirror also provides the far end of the laser cavity. A positioner may be used to provide a relative angle between the fiber-axis and the horizontal diffracting grating, and standard semiconductor chips are manufactured and different nominal wavelength of light devices are produced by selecting different relative angle positioners.

Abstract: These laser diode chips generate light parallel to the top surface and utilize gratings that diffract light out top and/or bottom surfaces. Thus they have both a long light generation region and a large output area, and can provide significantly higher power than prior art semiconductor-chip diodes. The chips utilize graded index (GRIN) layers to provide light containment in the core. Previously, such GRIN layers have not been doped. We have found that doping of a portion of the graded layers generally lowers resistance and increases efficiency of the semiconductor structure while retaining the light containment effectiveness of full-wavelength-height waveguide. Lowering resistance generally also lowers heat generation and thus increases reliability.

Abstract: Our wafer scale processing techniques produce chip-laser-diodes with a diffraction grating that redirects output light out the top and/or bottom surfaces. Noise reflections are carefully controlled, allowing significant reduction of the signal fed to the active region. This can be an improved method of diode fabrication where the top metal contact has a portion of the contact adjacent the top electrode that is of tungsten metal. The tungsten metal is preferably CVD tungsten. Photoresist has preferably been deposited prior to the deposition of the CVD tungsten and the pattern for the metal contact is opened in the photoresist, and then the CVD tungsten is deposited, and then the photoresist is removed, also removing any tungsten deposited on the photoresist. Preferably the CVD tungsten is deposited by using hydrogen reduction of tungsten hexafluoride.

Abstract: Our wafer scale processing techniques produce chip-laser-diodes with a diffraction grating that redirects output light out the top and/or bottom surfaces. Noise reflections are carefully controlled, allowing significant reduction of the signal fed to the active region. This can provide an improved method of horizontally generating light within a chip-laser-diode and transmitting a substantial portion of the generated light vertically out of the diode, using a disordered waveguide-region. Generally, the waveguide region is disordered by rapid-thermal-annealing. Preferably, the disordering of the waveguide region by rapid-thermal-annealing is done while masking portions of the diode other than the waveguide region with photoresist or with a mechanical mask, and preferably is done with light passed through an optical pass filter designed to pass the output wavelength of the diode.

Abstract: This narrow-band coherent light, (light that is virtually all in-phase and at, or essentially at, the same wavelength) grating-coupled, diode-chip-laser improvement enables, for the first time, combining the functional advantages of non-semiconductor-chip (e.g., fluid) lasers with the efficiency, economy, and convenience of semiconductor-chip-manufacturing (wafer processing), while providing significantly higher power than prior art semiconductor-chip diodes. It utilizes a manufacturable grating that couples output light “vertically” out of a horizontal, active-region-containing core, and generally minimizes reflections that would cause loss and noise. All reflections from the grating back into the active region are essentially eliminated (to less than 0.1% and preferably less than 0.01% of the light diffracted out of said structure).

Abstract: This is a method for masking a structure 12 for patterning micron and submicron features, the method comprises: forming at least one monolayer 32 of adsorbed molecules on the structure; prenucleating portions 46,48 of the adsorbed layer by exposing the portions corresponding to a desired pattern 36 of an energy source 42; and selectively forming build-up layers 66,68 over the prenucleated portions to form a mask over the structure to be patterned. Other methods are also disclosed.

Abstract: This invention has enabled a new, simple thin film nanoporous dielectric fabrication method. In general, this invention uses glycerol, or another low volatility compound, as a solvent. This new method allows thin film aerogels/low density xerogels to be made without supercritical drying, freeze drying, or a surface modification step before drying. Thus, this invention allows production of nanoporous dielectrics at room temperature and atmospheric pressure, without a separate surface modification step. Although this new method allows fabrication of aerogels without substantial pore collapse during drying, there may be some permanent shrinkage during aging and/or drying. This invention allows controlled porosity thin film nanoporous aerogels to be deposited, gelled, aged, and dried without atmospheric controls.

Abstract: This invention has enabled a new, simple nanoporous dielectric fabrication method. In general, this invention uses a polyol, such as glycerol, as a solvent. This new method allows both bulk and thin film aerogels to be made without supercritical drying, freeze drying, or a surface modification step before drying. Prior art aerogels have required at least one of these steps to prevent substantial pore collapse during drying. Thus, this invention allows production of nanoporous dielectrics at room temperature and atmospheric pressure, without a separate surface modification step. Although not required to prevent substantial densification, this new method does not exclude the use of supercritical drying or surface modification steps prior to drying. In general, this new method is compatible with most prior art aerogel techniques. Although this new method allows fabrication of aerogels without substantial pore collapse during drying, there may be some permanent shrinkage during aging and/or drying.

Abstract: A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium oxynitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Zirconium oxynitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide.

Abstract: A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) silicon-oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium silicon-oxynitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Zirconium silicon-oxynitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide. However, the zirconium silicon-oxynitride gate dielectric may also be designed to have the advantages of silicon dioxide, e.g. high breakdown, low interface state density, and high stability.

Abstract: This invention has enabled a new, simple nanoporous dielectric fabrication method. In general, this invention uses a polyol, such as glycerol, as a solvent. This new method allows both bulk and thin film aerogels to be made without supercritical drying, freeze drying, or a surface modification step before drying. Prior art aerogels have required at least one of these steps to prevent substantial pore collapse during drying. Thus, this invention allows production of nanoporous dielectrics at room temperature and atmospheric pressure, without a separate surface modification step. Although not required to prevent substantial densification, this new method does not exclude the use of supercritical drying or surface modification steps prior to drying. In general, this new method is compatible with most prior art aerogel techniques. Although this new method allows fabrication of aerogels without substantial pore collapse during drying, there may be some permanent shrinkage during aging and/or drying.

Abstract: A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) silicon-oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium silicon-oxynitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Zirconium silicon-oxynitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide. However, the zirconium silicon-oxynitride gate dielectric may also be designed to have the advantages of silicon dioxide, e.g. high breakdown, low interface state density, and high stability.

Abstract: A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium oxynitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Zirconium oxynitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide.

Abstract: This invention has enabled a new, simple thin film nanoporous dielectric fabrication method. In general, this invention uses glycerol, or another low volatility compound, as a solvent. This new method allows thin film aerogels/low density xerogels to be made without supercritical drying, freeze drying, or a surface modification step before drying. Thus, this invention allows production of nanoporous dielectrics at room temperature and atmospheric pressure, without a separate surface modification step. Although this new method allows fabrication of aerogels without substantial pore collapse during drying, there may be some permanent shrinkage during aging and/or drying. This invention allows controlled porosity thin film nanoporous aerogels to be deposited, gelled, aged, and dried without atmospheric controls.