Abstract: This is a method of forming a conductor 26 on an interlevel dielectric layer 12 which is over an electronic microcircuit substrate 10, and the structure produced thereby. The method utilizes: forming an intralevel dielectric layer 14 over the interlevel dielectric layer 12; forming a conductor groove in the intralevel dielectric layer 14 exposing a portion of the interlevel dielectric layer 12; anisotropically depositing a selective deposition initiator 24 onto the intralevel dielectric layer 14 and onto the exposed portion of the interlevel dielectric layer 14; and selectively depositing conductor metal 26 to fill the groove to at least half-full. The selective deposition initiator 24 may selected from the group consisting of tungsten, titanium, paladium, platinum, copper, aluminum, and combinations thereof. In one embodiment, the selective deposition initiator 24 is paladium, and the selectively deposited conductor metal 26 is principally copper.

Abstract: This invention has enabled a new, simple nanoporous dielectric fabrication method. In general, this invention uses a polyol, such as glycerol, as a solvent. This new method allows both bulk and thin film aerogels to be made without supercritical drying, freeze drying, or a surface modification step before drying. Prior art aerogels have required at least one of these steps to prevent substantial pore collapse during drying. Thus, this invention allows production of nanoporous dielectrics at room temperature and atmospheric pressure, without a separate surface modification step. Although not required to prevent substantial densification, this new method does not exclude the use of supercritical drying or surface modification steps prior to drying. In general, this new method is compatible with most prior art aerogel techniques. Although this new method allows fabrication of aerogels without substantial pore collapse during drying, there may be some permanent shrinkage during aging and/or drying.

Abstract: A semiconductor device and method having a low-permittivity material between closely-spaced leads in order to decrease unwanted capacitance, while having a more structurally strong dielectric between widely-spaced leads where capacitance is not as critical. A metal layer 14 is deposited on a substrate 12 of a semiconductor wafer 10, where the metal layer 14 has a first region 15 and a second region 17. An insulating layer 39 is deposited on the metal layer, and the insulating layer 39 is patterned with a conductor pattern of widely-spaced leads and closely-spaced leads. Widely-spaced leads 16 are formed in the first region 15 of the metal layer 14. At least adjacent portions of closely-spaced leads 18 are formed in the second region 17 of the metal layer 14. A low-permittivity material 34 is deposited between adjacent portions of the closely-spaced leads 18. A structural dielectric layer 26 is deposited between at least the widely-spaced leads.

Abstract: A semiconductor device and method having a low-permittivity material between closely-spaced leads in order to decrease unwanted capacitance, while having a more structurally strong dielectric between widely-spaced leads where capacitance is not as critical. A metal layer 14 is deposited on a substrate 12 of a semiconductor wafer 10, where the metal layer 14 has a first region 15 and a second region 17. An insulating layer 39 is deposited on the metal layer, and the insulating layer 39 is patterned with a conductor pattern of widely-spaced leads and closely-spaced leads. Widely-spaced leads 16 are formed in the first region 15 of the metal layer 14. At least adjacent portions of closely-spaced leads 18 are formed in the second region 17 of the metal layer 14. A low-permittivity material 34 is deposited between adjacent portions of the closely-spaced leads 18. A structural dielectric layer 26 is deposited between at least the widely-spaced leads.

Abstract: A fuse and antifuse link structure, which when used with a memory integrated circuit device such as a gate array or programmable mad-only memory (PROM), allows the memory circuit to be reprogrammed. The fuse and antifuse link is comprised of a fuse 12 and an antifuse 16, connected in series, parallel, or a combination thereof. Either element of the link can be programmed initially, and the other can be programmed in a second step, to reverse the first programming. Several links can be used in one circuit to provide multiple reprogramming capability.

Abstract: This is a device and method of forming air gaps in between metal leads comprising. The method comprising: forming the metal leads 51-53 on an insulating layer 50; depositing a nonwetting material layer 56 on the metal leads 51-53 and the insulating layer 50; anisotropically etching the nonwetting material 56 to remove the nonwetting material 56 from open areas and leaving the nonwetting material on side walls of the metal leads 51-53; and depositing a dielectric layer 60 on top of the metal leads 51-53, and the insulating layer 50, whereby the air gaps 58 are produced in between the metal leads 51-53 below the dielectric layer 60. The method may include anisotropically etching at an angle, not vertical, whereby the etching allows removal of the nonwetting material from exterior side walls of the metal leads. The method may also include leaving the nonwetting material layer in between the metal leads. The deposition of the dielectric layer may utilize plasma deposition and spin on techniques.

Abstract: A color display system for transforming pixel data, where each of three primary colors is represented by a value for its intensity, into an image. Three light sources, 11a-11c, one for each primary color, each illuminate a spatial light modulator (SLM) 12a -12c, such as a deformable mirror device. Each of these SLMs 12a-12c is operated so that it reflects an amount of light corresponding to the intensity of the pixel currently being displayed. The light thus regulated is linearized into a single beam of mixed-color light using mirrors 14a, 14b, and lens 15, and directed to an addressing SLM 13. Addressing SLM 13 is operated so that only an element corresponding to the pixel being displayed is "on". The addressing SLM 13 reflects the mixed-color light for that pixel to a photosensitive surface 18.

Abstract: An apparatus and method for capturing an image, using a spatial light modulator (SLM) 11 and a single-element sensor 15. The SLM 11 is an array of individually switchable pixel elements, which reflect light toward the sensor if switched to an "on" position. As each pixel element is switched on, light from that pixel element is directed to the sensor 15. For each pixel element, the sensor 15 generates a signal proportional to the light associated with that pixel element, the result being a series of signals representing at least one image frame. The process may be repeated for a number of image frames for generating moving pictures.

Abstract: A vapor stream from a sand chlorinator containing principally zirconium tetrachloride, hafnium tetrachloride and silicon tetrachloride contaminated with ferric chloride is purified by cooling the vapor to a temperature of about 335.degree. C. to about 600.degree. C. The cooled vapors flow through a gaseous diffusion separative barrier where a silicon tetrachloride vapor stream contaminated with metal chlorides flows from the separative barrier as a "fast" stream; ferric chloride is adsorbed by the separative barrier; and a vapor stream principally containing zirconium tetrachloride, hafnium tetrachloride and silicon tetrachloride is screened by the separative barrier.

Abstract: Scandium and yttrium present in sand is recovered from the residue pulled from sand chlorinators. The residue is digested with an acid to produce a liquid containing scandium, yttrium, sodium, calcium and at least one radioactive metal of the group consisting of radium, thorium and uranium. The metal-containing liquid is then fed through a cation exchanger. The cation exchanger is eluted with an acid to produce eluate functions containing at least partially separated metals. A first eluate fraction contains at least half of the calcium and the sodium, a second eluate fraction contains at least half of the radioactive metals, a third eluate fraction contains at least half of the scandium and a fourth eluate fraction contains at least half of the yttrium which were contained in the metal-containing feed.

Abstract: This is a process for fabrication of nickel-oxide insulation on a superconductor. The process utilizes; reacting oxygen-free nickel powder with oxygen-free carbon monoxide generally at 50.degree.-75.degree. C. to produce a nickel carbonyl, separating the nickel carbonyl from reaction by-products and excess reagents by cooling the carbonyl and decanting the nickel carbonyl liquor, and contacting the carbonyl to a surface of a wire containing superconductor or superconductor precursors in an atmosphere containing a controlled amount of oxygen, with the wire at 50.degree.-800.degree. C. to produce nickel suboxide insulation on the wire. The purified nickel carbonyl and oxygen may be alternately (rather than simultaneously) introduced, to deposit a series of metallic nickel films on the wire, each of which metallic films are then oxidized to a nickel suboxide.

Abstract: A major cost component for zirconium alloy manufacture and fabrication is metal scrap generation during fabrication. This scrap, which has already incurred the entire process conversion cost from zircon sand to metal refining, constitutes an expensive cost to the fabrication process. The present invention teaches that these alloy scraps may be separated into their components by molten salt electrolysis using FLINAK electrolyte. The alloy components are recycled directly to the alloying process as cathodic grade metals, saving the cost of completely repeating the zircon conversion process.

Abstract: This is a process for making precursors for ceramic superconductor. It utilizes fluidized bed chlorination of a rare earth ore (e.g. xenotime or monazite) a separation of yttrium chloride by differential condensation at 725.degree.-1200.degree. C. and reaction with an alkali metal alkoxide to produce yttrium alkoxide for mixing with alkoxide of other non-oxygen constituents of the superconductor for producing an alkoxide composite for processing into the superconductor.

Abstract: Improvements are described to a process in which the extractive distillation separation of zirconium or hafnium may be accomplished using mixtures of fused alkali metal or alkali metal and alkaline earth chlorides as the solvent. The solvent composition is adjusted to provide a low-melting eutectic, permitting recirculation of the stripped solvent in the liquid phase, as well as reducing the temperature required for thermal stripping (reducing the corrosivity of the fluid). Stripping of the bottoms is accomplished at least partially by direct electrolysis of the bottoms stream, producing the zirconium-free salt recycle stream to be transferred to the top of the column, and at least partially eliminating the need for chemical reduction of the tetrachlorides to metal (a costly process generating undersirable waste streams). Regeneration of the reflux is accomplished in a presurized condenser system, of one or more stages, with all material transport to be done in either the liquid or vapor states.

Abstract: This is an improved method for separating hafnium from zirconium of the type where a complex of zirconium and hafnium chlorides and phosphorus oxychloride is prepared from zirconium-hafnium chloride and the complex is introduced into a distillation column, with the improvement comprising: electrochemical breaking of the zirconium of hafnium chloride complex taken from said distillation column to separate product from the complex. The electrochemical breaking of the complex, possibly by reducing zirconium or hafnium, is done in a molten salt bath. Preferably, the molten salt in said molten salt bath consists principally of a mixture of alkali metal and alkaline earth metal chlorides and zirconium or hafnium chloride. The product can be either chloride, metal, or mixed metal and subchloride for further processing.

Abstract: This is a method for molten salt systems related to distillation for zirconium-hafnium separation and prevents buildup of iron chloride by electrochemically reducing iron from the molten salt to give very low levels of iron chloride in the distillation column, to reduce corrosion, improve the product and, in some cases, to allow the molten salt system to be run continuously. The improvement comprises electrochemical purification of molten salt containing zirconium-hafnium chloride either, prior to introduction of the zirconium-hafnium chloride into a distillation column, or after introduction, or both, to substantially eliminate iron chloride from the zirconium-hafnium chloride. The molten salt during the electrochemical purification consists essentially of a mixture of chlorides of alkali metals, alkaline earth metals, zirconium, hafnium, aluminum, manganese, and/or zinc.

Abstract: This is a process for removing phosphorus oxychloride from a complex of zirconium or hafnium chloride and phosphorus oxychloride utilizing a lithium-potassium chloride molten salt absorber vessel displacing phosphorous oxychloride from the complex, with a condenser which has the complex of zirconium or hafnium chloride and phosphorus oxychloride as the condensing fluid to scrub zirconium or hafnium chloride from the phosphorus oxychloride vapor released from the complex. The process uses at least one separate vessel to strip the zirconium or hafnium chloride from the lithium-potassium chloride molten salt.

Abstract: This is a molten salt extractive distillation process for separating hafnium from zirconium. It utilizes at least principally a ZnCl.sub.2 --Ca/MgCl.sub.2 molten salt solvent, and preferably ZnCl.sub.2 --Ca/MgCl.sub.2 in a near 95-15 mixture. The extraction column is preferably run about 380.degree.-420.degree. C. at about one atmosphere and stripping is preferably done at about 385.degree.-450.degree. C. utilizing an inert gas carrier.

Abstract: This is a molten salt extractive distillation process for separating hafnium from zirconium. It utilizes at least principally a ZnCl.sub.2 -PbCl.sub.2 molten salt solvent, and preferably ZnCl.sub.2 -PbCl.sub.2 in a near eutectic or eutectic mixture. The extraction column is preferably run about 370.degree.-390.degree. C. at about one atomosphere and stripping is preferably done at 375.degree.-400.degree. C. utilizing an inert gas carrier.

Abstract: This is a method for reduction of chlorides of zirconium, hafnium or titanium, and provides a practical method of removing the product metal from the reduction vessel. A seal metal layer is used at the bottom of the vessel. The upper portion of the seal metal layer is liquid and the lower portion is solid. Product metal settles into the liquid portion. Product metal in a matrix of solid seal metal is withdrawn from the bottom of the vessel. Seal metal is predominantly either zinc or tin. Either pure zinc or tin or zinc or tin alloyed with product metal can be recycled to the bottom of the reduction vessel.