Abstract: Disclosed herein are a method and apparatus for automated following behind a lead vehicle. The lead vehicle navigates a path from a starting point to a destination. The lead vehicle and the following vehicle are connected via V2V communication, allowing one or more following vehicles to detect the path taken by the lead vehicle. A computerized control system on the following vehicle (a Follow-the-Leader, or FTL, system) allows the following vehicle to mimic the behavior of the lead vehicle, with the FTL system controlling steering to guide the following vehicle along the path previously navigated by the lead vehicle. In some embodiments, the lead vehicle and following vehicle may both use Global Navigation Satellite System (GNSS) position coordinates. In some embodiments, the following vehicle may also have a system of sensors to maintain a gap between the following and lead vehicles.

Abstract: A portable, closed-loop system of capture, analysis, and feedback uses a headset containing a small unobtrusive camera and a control computer that communicates wirelessly with a wireless network and/or remote platform. The headset may also contain user controls, an audio feedback component, a battery, interconnection circuitry, cables, and connections for an intraoral device. The camera component of the headset captures images during an activity to be analyzed, such as walking or viewing a room, and sends data (e.g., visual data) to the controller. The controller transmits the data to a database on the remote platform that includes software that instantly analyzes the image information represented in the data, then provides immediate feedback to the headset. The controller may independently process the data.

Abstract: Methods and apparatus for the cleaning PECVD chambers that utilize molecular fluorine as the cleaning material.

Abstract: Methods and apparatus for reducing post PECVD vacuum and abatement system fouling. Chamber cleaning times are reduced leading to increased efficiency and lower cost fabrication processes by introducing F2 or a fluorine containing gas into the PECVD system. When using F2, the cleaning gas may be introduced directly to desired locations of the system where it can interact without activation with unwanted deposits. Alternatively, the cleaning gas may be activated in-situ in the equipment using existing plasma discharge equipment, or the cleaning gas may be activated using an RPS and then introduced to the desired location in its already activated state.

Abstract: A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.

Abstract: A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.

Abstract: A method is described of treating a gas stream exhausted from an atomic layer deposition (ALD) process chamber to which two or more gaseous precursors are alternately supplied. Between the process chamber and a vacuum pump used to draw the gas stream from the chamber, the gas stream is conveyed to a gas mixing chamber, to which a reactant is supplied for reacting with one of the gaseous precursors to form solid material. The gas stream is then conveyed to a cyclone separator to separate solid material from the gas stream. By deliberately reacting a non-reacted precursor to form solid material upstream from the pump, reaction within the pump of the non-reacted precursor and a second non-reacted precursor subsequently drawn from the chamber by the pump can be inhibited.

Abstract: A method is described of treating a gas stream exhausted from an atomic layer deposition (ALD) process chamber to which two or more gaseous precursors are alternately supplied. Between the process chamber and a vacuum pump used to draw the gas stream from the chamber, the gas stream is conveyed to a gas mixing chamber, to which a reactant is supplied for reacting with one of the gaseous precursors to form solid material. The gas stream is then conveyed to a cyclone separator to separate solid material from the gas stream. By deliberately reacting a non-reacted precursor to form solid material upstream from the pump, reaction within the pump of the non-reacted precursor and a second non-reacted precursor subsequently drawn from the chamber by the pump can be inhibited.

Abstract: The present invention relates to systems and methods for management of brain and body functions and sensory perception. For example, the present invention provides systems and methods of sensory substitution and sensory enhancement (augmentation) as well as motor control enhancement. The present invention also provides systems and methods of treating diseases and conditions, as well as providing enhanced physical and mental health and performance through sensory substitution, sensory enhancement, and related effects.

Abstract: The present invention relates to systems and methods for management of brain and body functions and sensory perception. For example, the present invention provides systems and methods of sensory substitution and sensory enhancement (augmentation) as well as motor control enhancement. The present invention also provides systems and methods of treating diseases and conditions, as well as providing enhanced physical and mental health and performance through sensory substitution, sensory enhancement, and related effects.

Abstract: A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.

Abstract: A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.

Abstract: The present invention relates to systems and methods for characterizing balance function. In particular, the present invention provides systems and methods for monitoring balance function (e.g., in a single individual and/or plurality of individuals), generating one or more databases comprising balance function data, processing and/or analyzing databases comprising balance function data, and characterizing balance function (e.g., in a single individual and/or plurality of individuals (e.g., utilizing databases comprising balance function data)). Systems and methods of the present invention find use in, among other things, research, diagnostic and therapeutic applications.

Abstract: A method is described of treating a gas stream exhausted from an atomic layer deposition (ALD) process chamber to which two or more gaseous precursors are alternately supplied. Between the process chamber and a vacuum pump used to draw the gas stream from the chamber, the gas stream is conveyed to a gas mixing chamber, to which a reactant is supplied for reacting with one of the gaseous precursors to form solid material. The gas stream is then conveyed to a cyclone separator to separate solid material from the gas stream. By deliberately reacting a non-reacted precursor to form solid material upstream from the pump, reaction within the pump of the non-reacted precursor and a second non-reacted precursor subsequently drawn from the chamber by the pump can be inhibited.

Abstract: Methods and apparatus for cleaning a process chamber using a fluorine gas, wherein the fluorine gas is at least partially recycled for further use in the cleaning cycle. The method includes generation of the fluorine, separation of fluorine from the waste gas of the process chamber and abatement of the waste. The apparatus includes a vacuum pump for moving the waste gas and fluorine gas to and from the process chamber and can further include a sensing unit to determine the cleaning cycle endpoint.

Abstract: The present invention relates to methods and apparatus used in the cleaning of chambers, such as semiconductor processing chambers. In particular, fluorine from a fluorine generator is used in the cleaning cycle and by-product hydrogen from the fluorine generation is used to condition the chamber and remove residual fluorine following the cleaning cycle.

Abstract: The present invention provides a system, apparatus and method for improving the efficiency of a semiconductor processing system, such as a deposition system by decreasing or substantially eliminating the accumulation of by-products in the apparatus components of the semiconductor processing system. The present invention further relates to improving the efficiency of a foreline trap associated with a semiconductor processing system, wherein the trap removes substantially all of the by-products from the exhaust gas from the processing chamber. In addition, the present invention provides a system, apparatus and method for efficiently clearing traps of accumulated by-products from exhaust gas of a semiconductor processing system.

Abstract: A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.

Abstract: A method and apparatus is disclosed for producing fluorine by providing a contained fluorine precursor source located proximate to or remotely from an adsorbent bed, optionally in a replaceable unit that may be a replaceable module comprising both the fluorine source and the adsorbent bed. Fluorine derived preferably from a nitrogen trifluoride source and used to remove deposited silicon-containing impurities in reaction chambers is reclaimed from an adsorbent bed, and made available to the reaction chamber as a supplemental fluorine source to reduce the total required amount of nitrogen trifluoride source gas. The separation column adsorbent is regenerated in cyclical intervals using a reverse flow of inert gas.

Abstract: The present invention provides for the use of F2 in the process of deposition chamber cleaning which is especially effective if operated under high pressure conditions. In addition, the present invention provides for the use of F2 under high pressure to perform substrate etching or wafer thinning procedures at a high etch rate.