Patents by Inventor Richard Johannes Franciscus Van Haren
Richard Johannes Franciscus Van Haren has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200159128Abstract: A device manufacturing method includes: forming a layer on a substrate by a layer-forming process; determining a value of a metric at a plurality of positions across the substrate, wherein variation of the values across the substrate is indicative of variation of layer thickness across the substrate; controlling the layer-forming parameter based on the values so as to reduce variation of layer thickness in a subsequent layer-forming process on a different substrate; and repeating the layer-forming process on a different substrate according to the controlled layer-forming parameter.Type: ApplicationFiled: July 11, 2018Publication date: May 21, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Victor Emanuel CALADO, Richard Johannes Franciscus VAN HAREN, Jerome Yann Remi DEPRE, Clément André Auguste MASSACRIER
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Patent number: 10642162Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.Type: GrantFiled: March 13, 2019Date of Patent: May 5, 2020Assignee: ASML Netherlands B.V.Inventors: Alexander Ypma, Jasper Menger, David Deckers, David Han, Adrianus Cornelis Matheus Koopman, Irina Lyulina, Scott Anderson Middlebrooks, Richard Johannes Franciscus Van Haren, Jochem Sebastiaan Wildenberg
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Publication number: 20200103767Abstract: A patterning device cooling system for thermally conditioning a patterning device of a lithographic apparatus, wherein the patterning device in use, is being irradiated by exposure radiation, wherein the patterning device cooling system comprises: a thermal conditioner configured to thermally condition the patterning device; and a controller configured to control the thermal conditioner to thermally condition the patterning device dependent on an amount of the exposure radiation absorbed by the patterning device.Type: ApplicationFiled: December 2, 2019Publication date: April 2, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Hakki Ergün CEKLI, Günes NAKIBOGLU, Frank Johannes Jacobus VAN BOXTEL, Jean-Philippe Xavier VAN DAMME, Richard Johannes Franciscu VAN HAREN
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Publication number: 20200050117Abstract: A method and control system for determining stress in a substrate. The method includes determining a measured position difference between a measured position of at least one first feature and a measured position of at least one second feature which have been applied on a substrate, and determining local stress in the substrate from the measured position difference.Type: ApplicationFiled: February 7, 2018Publication date: February 13, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Richard Johannes Franciscus VAN HAREN, Leon Paul VAN DIJK, Ilya MALAKHOVSKY, Ronald Henricus Johannes OTTEN
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Patent number: 10545410Abstract: A lithographic process includes clamping a substrate onto a substrate support, measuring positions across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic in the positions measured across the substrate. The correction may be generated by inferring one or more shape characteristics of the warped substrate using the measured positions and other information. Based on the one or more inferred shape characteristics, a clamping model is applied to simulate deformation of the warped substrate in response to clamping. A correction is calculated based on the simulated deformation.Type: GrantFiled: February 7, 2017Date of Patent: January 28, 2020Assignee: ASML Netherlands B.V.Inventors: Hakki Ergun Cekli, Masashi Ishibashi, Leon Paul Van Dijk, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Reiner Maria Jungblut, Cedric Marc Affentauschegg, Ronald Henricus Johannes Otten
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Publication number: 20190369503Abstract: A technique to generate predicted data for control or monitoring of a production process to improve a parameter of interest. Context data associated with operation of the production process is obtained. Metrology/testing is performed on the product of the production process, thereby obtaining performance data. A context-to-performance model is provided to generate predicted performance data based on labeling of the context data with performance data. This is an instance of semi-supervised learning. The context-to-performance model may include the learner that performs semi-supervised labeling. The context-to-performance model is modified using prediction information related to quality of the context data and/or performance data. Prediction information may include relevance information relating to relevance of the obtained context data and/or obtained performance data to the parameter of interest.Type: ApplicationFiled: December 13, 2017Publication date: December 5, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Alexander YPMA, Dimitra GKOROU, Georgios TSIROGIANNIS, Thomas Leo Maria HOOGENBOOM, Richard Johannes Franciscus VAN HAREN
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Patent number: 10495986Abstract: A patterning device cooling system for thermally conditioning a patterning device of a lithographic apparatus, wherein the patterning device in use, is being irradiated by exposure radiation, wherein the patterning device cooling system has: a thermal conditioner configured to thermally condition the patterning device; and a controller configured to control the thermal conditioner to thermally condition the patterning device dependent on an amount of the exposure radiation absorbed by the patterning device.Type: GrantFiled: February 16, 2017Date of Patent: December 3, 2019Assignee: ASML NETHERLANDS B.V.Inventors: Hakki Ergün Cekli, Güneş Nakibo{hacek over (g)}lu, Frank Johannes Jacobus Van Boxtel, Jean-Philippe Xavier Van Damme, Richard Johannes Franciscus Van Haren
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Publication number: 20190346256Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: ApplicationFiled: July 10, 2019Publication date: November 14, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Kaustuve BHATTACHARYYA, Henricus Wilhelmus Maria VAN BUEL, Christophe David FOUQUET, Hendrik Jan Hidde SMILDE, Maurits VAN DER SCHAAR, Arie Jeffrey DEN BOEF, Richard Johannes Franciscus VAN HAREN, Xing Lan LIU, Johannes Marcus Maria BELTMAN, Andreas FUCHS, Orner Abubaker Orner ADAM, Michael KUBIS, Martin Jacobus Johan JAK
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Patent number: 10474045Abstract: A method of characterizing a deformation of a plurality of substrates is described. The method includes: measuring, for a plurality of n different alignment measurement parameters ? and for a plurality of substrates, a position of the alignment marks; determining a positional deviation as the difference between the n alignment mark position measurements and a nominal alignment mark position; grouping the positional deviations into data sets; determining an average data set; subtracting the average data set from the data sets to obtain a plurality of variable data sets; performing a blind source separation method on the variable data sets, thereby decomposing the variable data sets into a set of eigenwafers representing principal components of the variable data sets; and subdividing the set of eigenwafers into a set of mark deformation eigenwafers and a set of substrate deformation eigenwafers.Type: GrantFiled: June 28, 2016Date of Patent: November 12, 2019Assignee: ASML Netherlands B.V.Inventors: Franciscus Godefridus Casper Bijnen, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Patricius Aloysius Jacobus Tinnemans, Alexander Ypma, Irina Anatolievna Lyulina, Edo Maria Hulsebos, Hakki Ergün Cekli, Xing Lan Liu, Loek Johannes Petrus Verhees, Victor Emanuel Calado, Leon Paul Van Dijk
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Publication number: 20190294059Abstract: A method of determining a pellicle compensation correction which compensates for a distortion of a patterning device resultant from mounting of a pellicle onto the patterning device. The method includes determining a pellicle induced distortion from a first shape associated with the patterning device without the pellicle mounted and a second shape associated with the patterning device with the pellicle mounted, the pellicle induced distortion describing the distortion of the patterning device due to the pellicle being mounted. The determined pellicle induced distortion is then used to calculate the pellicle compensation correction for a lithographic exposure step using the patterning device.Type: ApplicationFiled: May 16, 2017Publication date: September 26, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Leon Paul VAN DIJK, Victor Emanuel CALADO, Willem Seine Christian ROELOFS, Richard Johannes Franciscus VAN HAREN
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Publication number: 20190285992Abstract: A method to change an etch parameter of a substrate etching process, the method including: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.Type: ApplicationFiled: November 6, 2017Publication date: September 19, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Richard Johannes Franciscus VAN HAREN, Victor Emanuel CALADO, Leon Paul VAN DIJK, Roy WERKMAN, Everhardus Cornelis MOS, Jochem Sebastiaan WILDENBERG, Marinus JOCHEMSEN, Bijoy RAJASEKHARAN, Erik JENSEN, Adam Jan URBANCZYK
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Publication number: 20190278188Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.Type: ApplicationFiled: March 13, 2019Publication date: September 12, 2019Applicant: ASML Netherlands B.V.Inventors: Alexander YPMA, Jasper MENGER, David DECKERS, David HAN, Adrianus Cornelis Matheus KOOPMAN, Irina LYULINA, Scott Anderson MIDDLEBROOKS, Richard Johannes Franciscus VAN HAREN, Jochem Sebastiaan WILDENBERG
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Patent number: 10386176Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.Type: GrantFiled: August 25, 2015Date of Patent: August 20, 2019Assignee: ASML Netherlands B.V.Inventors: Kaustuve Bhattacharyya, Henricus Wilhelmus Maria Van Buel, Christophe David Fouquet, Hendrik Jan Hidde Smilde, Maurits Van Der Schaar, Arie Jeffrey Den Boef, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Johannes Marcus Maria Beltman, Andreas Fuchs, Omer Abubaker Omer Adam, Michael Kubis, Martin Jacobus Johan Jak
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Publication number: 20190250523Abstract: A method of determining an optimal operational parameter setting of a metrology system is described. Free-form substrate shape measurements are performed. A model is applied, transforming the measured warp to modeled warp scaling values. Substrates are clamped to a chuck, causing substrate deformation. Alignment marks of the substrates are measured using an alignment system with four alignment measurement colors. Scaling values thus obtained are corrected with the modeled warp scaling values to determine corrected scaling values. An optimal alignment measurement color is determined, based on the corrected scaling values. Optionally, scaling values are selected that were measured using the optimal alignment measurement color and a substrate grid is determined using the selected scaling values. A substrate may be exposed using the determined substrate grid to correct exposure of the substrate.Type: ApplicationFiled: October 17, 2017Publication date: August 15, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Leon Paul VAN DIJK, Victor Emanuel CALADO, Xing Lan LIU, Richard Johannes Franciscus VAN HAREN
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Patent number: 10331043Abstract: A method of devising a target arrangement, and associated target and reticle. The target includes a plurality of gratings, each grating having a plurality of substructures. The method includes: defining a target area; locating the substructures within the target area so as to form the gratings; and locating assist features at the periphery of the gratings, the assist features being configured to reduce measured intensity peaks at the periphery of the gratings. The method may include an optimization process including modelling a resultant image obtained by inspection of the target using a metrology process; and evaluating whether the target arrangement is optimized for detection using a metrology process.Type: GrantFiled: January 29, 2015Date of Patent: June 25, 2019Assignee: ASML Netherlands B.V.Inventors: Henricus Wilhelmus Maria Van Buel, Johannes Marcus Maria Beltman, Xing Lan Liu, Hendrik Jan Hidde Smilde, Richard Johannes Franciscus Van Haren
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Patent number: 10324379Abstract: A method to form on a substrate a first target comprising a first feature and a second target comprising a second feature, wherein the forming of the targets comprises applying the first feature and the second feature to the substrate by projection of a radiation beam through a production patterning device installed in a lithographic apparatus, the features corresponding to one or more features of the patterning device, and controlling a configuration of the lithographic apparatus to induce an aberration component, such that the first feature is applied to the substrate using a first value of an induced aberration component and the second feature is applied to the substrate using a second, different value of the induced aberration component; measuring a property of the targets; and using the measurements to determine a sensitivity of the property of the targets to changes in value of the induced aberration component.Type: GrantFiled: June 7, 2016Date of Patent: June 18, 2019Assignee: ASML Netherlands B.V.Inventors: Cedric Marc Affentauschegg, Milenko Jovanovic, Richard Johannes Franciscus Van Haren, Reiner Maria Jungblut, Robertus Wilhelmus Van Der Heijden
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Patent number: 10274834Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in said multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.Type: GrantFiled: March 8, 2018Date of Patent: April 30, 2019Assignee: ASML Netherlands B.V.Inventors: Alexander Ypma, Jasper Menger, David Deckers, David Han, Adrianus Cornelis Matheus Koopman, Irina Lyulina, Scott Anderson Middlebrooks, Richard Johannes Franciscus Van Haren, Jochem Sebastiaan Wildenberg
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Publication number: 20190079411Abstract: A lithographic process includes clamping a substrate onto a substrate support, measuring positions across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic in the positions measured across the substrate. The correction may be generated by inferring one or more shape characteristics of the warped substrate using the measured positions and other information. Based on the one or more inferred shape characteristics, a clamping model is applied to simulate deformation of the warped substrate in response to clamping. A correction is calculated based on the simulated deformation.Type: ApplicationFiled: February 7, 2017Publication date: March 14, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Hakki Ergun CEKLI, Masashi ISHIBASHI, Leon Paul VAN DIJK, Richard Johannes Franciscus VAN HAREN, Xing Lan LIU, Reiner Maria JUNGBLUT, Cedric Marc AFFENTAUSCHEGG, Ronald Henricus Johannes OTTEN
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Publication number: 20190041758Abstract: A method for determining a mechanical property of a layer applied to a substrate and associated control system for controlling a lithographic process. The method includes obtaining measured out-of-plane deformation of the substrate, the out-of-plane deformation including deformation normal to a substrate plane defined by, or parallel to, a substrate surface. The measured out-of-plane deformation is fitted to a second order polynomial in two coordinates associated with the substrate plane and the mechanical property (e.g. anisotropic Young's moduli) of the layer is determined based on characteristics of the fitted second order polynomial. The mechanical property of the layer can be used to calibrate an in-plane distortion model of the substrate for predicting in-plane distortion based on the measured out-of-plane deformation.Type: ApplicationFiled: July 18, 2018Publication date: February 7, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Leon Paul VAN DIJK, Mahdi SADEGHINIA, Richard Johannes Franciscus VAN HAREN, Ilya MALAKHOVSKY, Ronald Henricus Johannes OTTEN
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Patent number: 10162272Abstract: A substrate has a plurality of overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values, each of the overall asymmetry measurements being weighted by a corresponding weight factor. Each one of the weight factors represents a measure of feature asymmetry within the respective overlay grating. The calculation is used to improve subsequent performance of the measurement process, and/or the lithographic process. Some of the asymmetry measurements may additionally be weighted by a second weight factor in order to eliminate or reduce the contribution of phase asymmetry to the overlay.Type: GrantFiled: August 18, 2016Date of Patent: December 25, 2018Assignee: ASML Netherlands B.V.Inventors: Martin Jacobus Johan Jak, Hendrik Jan Hidde Smilde, Te-Chih Huang, Victor Emanuel Calado, Henricus Wilhelmus Maria Van Buel, Richard Johannes Franciscus Van Haren