Abstract: An apparatus to measure the position of a mark, the apparatus including an objective lens to direct radiation on a mark using radiation supplied by an illumination arrangement; an optical arrangement to receive radiation diffracted and specularly reflected by the mark, wherein the optical arrangement is configured to provide a first image and a second image, the first image being formed by coherently adding specularly reflected radiation and positive diffraction order radiation and the second image being formed by coherently adding specularly reflected radiation and negative diffraction order radiation; and a detection arrangement to detect variation in an intensity of radiation of the first and second images and to calculate a position of the mark in a direction of measurement therefrom.

Abstract: A deformation pattern recognition method including providing one or more deformation patterns, each deformation pattern being associated with a deformation of a substrate that may be caused by a processing device; transferring a first pattern to a substrate, the first pattern including at least N alignment marks, wherein each alignment mark is positioned at a respective predefined nominal position; processing the substrate; measuring a position of N alignment marks and determining an alignment mark displacement for the N alignment marks by comparing the respective nominal position with the respective measured position; fitting at least one deformation pattern to the measured alignment mark displacements; determining an accuracy value for each fitted deformation pattern, the accuracy value being representative of the accuracy of the corresponding fit; using the determined accuracy value, determining whether an associated deformation pattern is present.

Abstract: A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate.

Abstract: A method is used to estimate a value representative for a level of alignment mark deformation on a processed substrate using an alignment system. The alignment sensor system is able to emit light at different measuring frequencies to reflect from an alignment mark on the substrate and to detect a diffraction pattern in the reflected light in order to measure an alignment position of the alignment mark. The two or more measuring frequencies are used to measure an alignment position deviation per alignment mark associated with each of the two or more measuring frequencies relative to an expected predetermined alignment position of the alignment mark. A value is determined representative for the spread in the determined alignment position deviations per alignment mark in order to estimate the level of alignment mark deformation.

Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).

Abstract: End of line effect can occur during manufacture of components using a lithographic apparatus. These end of line effects can result in line end shortening of the features being manufactured. Such line end shortening may have an adverse impact on the component being manufactured. It is therefore desirable to predict and/or monitor the line end shortening. A test pattern is provided that has two separate areas such that, as designed, when the two areas are illuminated with radiation (for example from an angle-resolved scatterometer) they result in diffused radiation with asymmetry that is equal in sign to each other, but opposite in magnitude. When the test pattern is actually manufactured, line end shortening occurs, and so the asymmetry of the two areas are not equal and opposite. From the measured asymmetry of the manufactured test pattern, the amount of line end shortening that has occurred can be estimated.

Abstract: A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate.

Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).

Abstract: A substrate comprises a first mark and a second mark. The first mark comprises a first pattern with at least one mark feature formed by a first material and at least one further region formed by a second material. The first and second materials have different material characteristics with respect to a chemical-mechanical polishing process such that a step height in a direction substantially perpendicular to the surface of the substrate may be created by applying the chemical-mechanical polishing process. The second mark can be provided with a second step height by applying the chemical-mechanical polishing process. The second step height is substantially different from the first step height.

Abstract: A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).

Abstract: A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics.

Abstract: A substrate comprises a first mark and a second mark. The first mark comprises a first pattern with at least one mark feature formed by a first material and at least one region formed by a second material. The first and second materials have different material characteristics with respect to a substrate treatment process such that a step height in a direction substantially perpendicular to the surface of the substrate may be created by applying the substrate treatment process. The second mark can be provided with a second step height by applying the substrate treatment process. The second step height is substantially different from the first step height.

Abstract: A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate.

Abstract: The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.

Abstract: A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters.

Abstract: A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters.

Abstract: The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.

Abstract: A method of producing a marker on a substrate includes projecting a patterned beam on a layer of resist disposed on a substrate in a lithographic apparatus to create a latent marker; and locally heating the substrate at the marker location in the lithographic apparatus to transform the latent marker into a detectable marker.

Abstract: A marker, for example an alignment marker or an overlay marker is formed in two steps. First, a pattern of two chemically distinct feature types having a pitch comparable to product features is formed. This pattern is then masked by resist in the form of the desired marker, which has a larger pitch than the pattern. Finally, one of the two feature types is selectively etched in the open areas. The result is a marker with a large pitch suitable to be read with long wavelength radiation but the edges of the features are defined in an exposure step having a pitch comparable to the product features.

Abstract: An alignment mark on a substrate includes a periodic structure of a plurality of first elements and a plurality of second elements. The elements are arranged in an alternating repetitive sequence in a first direction. An overall pitch of the periodic structure is equal to a sum of a width of the first element and a width of the second element in the first direction. Each first element has a first periodic sub-structure with a first sub-pitch and each second element has a second periodic sub-structure with second sub-pitch. An optical property of the first element for interaction with a beam of radiation having a wavelength ? is different from the optical property of the second element. The overall pitch is larger than the wavelength ?, and each of the first and the second sub-pitch is smaller than the wavelength.