Patents by Inventor Richard M. Swanson
Richard M. Swanson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9035167Abstract: In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell.Type: GrantFiled: July 28, 2010Date of Patent: May 19, 2015Assignee: SunPower CorporationInventors: Richard M. Swanson, Denis De Ceuster, Vikas Desai, Douglas H. Rose, David D. Smith, Neil Kaminar
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Publication number: 20140220726Abstract: A silicon solar cell having a silicon substrate includes p-type and n-type emitters on a surface of the substrate, the emitters being doped nano-particles of silicon. To reduce high interface recombination at the substrate surface, the nano-particle emitters are preferably formed over a thin interfacial tunnel oxide layer on the surface of the substrate.Type: ApplicationFiled: March 28, 2014Publication date: August 7, 2014Applicant: SunPower CorporationInventor: Richard M. SWANSON
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Patent number: 8716596Abstract: A silicon solar cell having a silicon substrate includes p-type and n-type emitters on a surface of the substrate, the emitters being doped nano-particles of silicon. To reduce high interface recombination at the substrate surface, the nano-particle emitters are preferably formed over a thin interfacial tunnel oxide layer on the surface of the substrate.Type: GrantFiled: February 3, 2010Date of Patent: May 6, 2014Assignee: SunPower CorporationInventor: Richard M. Swanson
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Publication number: 20130247965Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.Type: ApplicationFiled: March 23, 2012Publication date: September 26, 2013Inventors: Richard M. Swanson, Marius M. Bunea, Michael C. Johnson, David D. Smith, Yu-Chen Shen, Peter J. Cousins, Tim Dennis
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Patent number: 8409912Abstract: In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments.Type: GrantFiled: September 15, 2010Date of Patent: April 2, 2013Assignee: SunPower CorporationInventors: Denis de Ceuster, Peter John Cousins, Richard M. Swanson, Jane E. Manning
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Patent number: 8399287Abstract: A solar cell that is readily manufactured using processing techniques which are less expensive than microelectronic circuit processing. In preferred embodiments, printing techniques are utilized in selectively forming masks for use in etching of silicon oxide and diffusing dopants and in forming metal contacts to diffused regions. In a preferred embodiment, p-doped regions and n-doped regions are alternately formed in a surface of the wafer through use of masking and etching techniques. Metal contacts are made to the p-regions and n-regions by first forming a seed layer stack that comprises a first layer such as aluminum that contacts silicon and functions as an infrared reflector, second layer such titanium tungsten that acts as diffusion barrier, and a third layer functions as a plating base. A thick conductive layer such as copper is then plated over the seed layer, and the seed layer between plated lines is removed.Type: GrantFiled: January 25, 2011Date of Patent: March 19, 2013Assignee: SunPower CorporationInventors: William P. Mulligan, Michael J. Cudzinovic, Thomas Pass, David D. Smith, Neil Kaminar, Keith McIntosh, Richard M. Swanson
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Patent number: 8163638Abstract: In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments.Type: GrantFiled: September 15, 2010Date of Patent: April 24, 2012Assignee: SunPower CorporationInventors: Denis De Ceuster, Peter John Cousins, Richard M. Swanson, Jane E. Manning
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Patent number: 7897867Abstract: A solar cell that is readily manufactured using processing techniques which are less expensive than microelectronic circuit processing. In preferred embodiments, printing techniques are utilized in selectively forming masks for use in etching of silicon oxide and diffusing dopants and in forming metal contacts to diffused regions. In a preferred embodiment, p-doped regions and n-doped regions are alternately formed in a surface of the wafer through use of masking and etching techniques. Metal contacts are made to the p-regions and n-regions by first forming a seed layer stack that comprises a first layer such as aluminum that contacts silicon and functions as an infrared reflector, second layer such titanium tungsten that acts as diffusion barrier, and a third layer functions as a plating base. A thick conductive layer such as copper is then plated over the seed layer, and the seed layer between plated lines is removed.Type: GrantFiled: February 13, 2008Date of Patent: March 1, 2011Assignee: SunPower CorporationInventors: William P. Mulligan, Michael J. Cudzinovic, Thomas Pass, David Smith, Neil Kaminar, Keith McIntosh, Richard M. Swanson
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Patent number: 7883343Abstract: A solar cell that is readily manufactured using processing techniques which are less expensive than microelectronic circuit processing. In preferred embodiments, printing techniques are utilized in selectively forming masks for use in etching of silicon oxide and diffusing dopants and in forming metal contacts to diffused regions. In a preferred embodiment, p-doped regions and n-doped regions are alternately formed in a surface of the wafer through use of masking and etching techniques. Metal contacts are made to the p-regions and n-regions by first forming a seed layer stack that comprises a first layer such as aluminum that contacts silicon and functions as an infrared reflector, second layer such titanium tungsten that acts as diffusion barrier, and a third layer functions as a plating base. A thick conductive layer such as copper is then plated over the seed layer, and the seed layer between plated lines is removed.Type: GrantFiled: March 28, 2007Date of Patent: February 8, 2011Assignee: SunPower CorporationInventors: William P. Mulligan, Michael J. Cudzinovic, Thomas Pass, David Smith, Neil Kaminar, Keith McIntosh, Richard M. Swanson
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Publication number: 20110000540Abstract: In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments.Type: ApplicationFiled: September 15, 2010Publication date: January 6, 2011Inventors: Denis DE CEUSTER, Peter John COUSINS, Richard M. SWANSON, Jane E. MANNING
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Publication number: 20110003424Abstract: In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments.Type: ApplicationFiled: September 15, 2010Publication date: January 6, 2011Inventors: Denis DE CEUSTER, Peter John COUSINS, Richard M. SWANSON, Jane E. MANNING
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Publication number: 20100307562Abstract: In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell.Type: ApplicationFiled: July 28, 2010Publication date: December 9, 2010Inventors: Richard M. SWANSON, Denis DE CEUSTER, Vikas DESAI, Douglas H. ROSE, David D. SMITH, Neil KAMINAR
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Patent number: 7820475Abstract: In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments.Type: GrantFiled: December 20, 2006Date of Patent: October 26, 2010Assignee: Sunpower CorporationInventors: Denis De Ceuster, Peter John Cousins, Richard M. Swanson, Jane E. Manning
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Patent number: 7786375Abstract: In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell.Type: GrantFiled: June 3, 2009Date of Patent: August 31, 2010Assignee: SunPower CorporationInventors: Richard M. Swanson, Denis De Ceuster, Vikas Desai, Douglas H. Rose, David D. Smith, Neil Kaminar
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Patent number: 7705237Abstract: A silicon solar cell having a silicon substrate includes p-type and n-type emitters on a surface of the substrate, the emitters being doped nano-particles of silicon. To reduce high interface recombination at the substrate surface, the nano-particle emitters are preferably formed over a thin interfacial tunnel oxide layer on the surface of the substrate.Type: GrantFiled: November 27, 2006Date of Patent: April 27, 2010Assignee: Sunpower CorporationInventor: Richard M. Swanson
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Patent number: 7633006Abstract: In one embodiment, a back side contact solar cell includes a tunnel oxide layer formed on a back side of a substrate. A polysilicon layer is formed on the tunnel oxide layer, and dopant sources are formed on the polysilicon layer. Dopants from the dopant sources are diffused into the polysilicon layer to form p-type and n-type regions therein. The p-type and n-type regions form p-n junctions that, among other advantages, allow for relatively high conversion efficiency.Type: GrantFiled: November 18, 2008Date of Patent: December 15, 2009Assignee: Sunpower CorporationInventor: Richard M. Swanson
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Publication number: 20090260673Abstract: In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell.Type: ApplicationFiled: June 3, 2009Publication date: October 22, 2009Inventors: Richard M. Swanson, Denis De Ceuster, Vikas Desai, Douglas H. Rose, David D. Smith, Neil Kaminar
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Patent number: 7554031Abstract: In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell.Type: GrantFiled: August 22, 2005Date of Patent: June 30, 2009Assignee: Sunpower CorporationInventors: Richard M. Swanson, Denis De Ceuster, Vikas Desai, Douglas H. Rose, David D. Smith, Neil Kaminar
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Patent number: 7468485Abstract: In one embodiment, a back side contact solar cell includes a tunnel oxide layer formed on a back side of a substrate. A polysilicon layer is formed on the tunnel oxide layer, and dopant sources are formed on the polysilicon layer. Dopants from the dopant sources are diffused into the polysilicon layer to form p-type and n-type regions therein. The p-type and n-type regions form p-n junctions that, among other advantages, allow for relatively high conversion efficiency.Type: GrantFiled: August 11, 2005Date of Patent: December 23, 2008Assignee: Sunpower CorporationInventor: Richard M. Swanson
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Publication number: 20080210301Abstract: In a solar cell having p doped regions and n doped regions alternately formed in a surface of a semiconductor wafer in offset levels through use of masking and etching techniques, metal contacts are made to the p regions and n regions by first forming a base layer contacting the p doped regions and n doped regions which functions as an antireflection layer, and then forming a barrier layer, such as titanium tungsten or chromium, and a conductive layer such as copper over the barrier layer. Preferably the conductive layer is a plating layer and the thickness thereof can be increased by plating.Type: ApplicationFiled: May 12, 2008Publication date: September 4, 2008Applicant: SUNPOWER CORPORATIONInventors: William P. Mulligan, Michael J. Cudzinovic, Thomas Pass, David Smith, Richard M. Swanson