Abstract: A semiconductor device fabrication process includes forming insulating mandrels over one or more replacement metal gates on a semiconductor substrate. The mandrels include a first insulating material. Each mandrel has approximately the same width as its underlying gate with each mandrel being at least as wide as its underlying gate. Mandrel spacers are formed around each insulating mandrel. The mandrel spacers include the first insulating material. Each mandrel spacer has a profile that slopes from being wider at the bottom to narrower at the top. A second insulating layer of the second insulating material is formed over the transistor. Trenches to the sources and drains of the gates are formed by removing the second insulating material from portions of the transistor between the mandrels. Trench contacts to the sources and drains of the gates are formed by depositing conductive material in the first trenches.

Abstract: Improved SRAMs are formed with significantly reduced local interconnect to gate shorts, by a technique providing bidirectional, self-aligned local interconnects, employing a gate hard mask over portions of the gates not connected to the local interconnects. Embodiments include forming a gate hard mask over gates, forming bidirectional trenches overlying portions of the gate electrodes and active silicon regions, etching the hard mask layer to expose regions of the gate electrodes that are to connect to local interconnects, and filling the trenches with conductive material to form self-aligned local interconnects.

Abstract: An integrated fin-based field effect transistor (FinFET) and method of fabricating such devices on a bulk wafer with EPI-defined fin heights over shallow trench isolation (STI) regions. The FinFET channels overlie the STI regions within the semiconductor bulk, while the fins extend beyond the STI regions into the source and drain regions which are implanted within the semiconductor bulk. With bulk source and drain regions, reduced external FinFET resistance is provided, and with the fins extending into the bulk source and drain regions, improved thermal properties is provided over conventional silicon on insulator (SOI) devices.

Abstract: Improved SRAMs are formed with significantly reduced local interconnect to gate shorts, by a technique providing bidirectional, self-aligned local interconnects, employing a gate hard mask over portions of the gates not connected to the local interconnects. Embodiments include forming a gate hard mask over gates, forming bidirectional trenches overlying portions of the gate electrodes and active silicon regions, etching the hard mask layer to expose regions of the gate electrodes that are to connect to local interconnects, and filling the trenches with conductive material to form self-aligned local interconnects.

Abstract: Methods for fabricating FinFET structures having gate structures of different gate widths are provided. The methods include the formation of sidewall spacers of different thicknesses to define gate structures of the FinFET structures with different gate widths. The width of a sidewall spacer is defined by the height of the structure about which the sidewall spacer is formed, the thickness of the sidewall spacer material layer from which the spacer is formed, and the etch parameters used to etch the sidewall spacer material layer. By forming structures of varying height, forming the sidewall spacer material layer of varying thickness, or a combination of these, sidewall spacers of varying width can be fabricated and subsequently used as an etch mask so that gate structures of varying widths can be formed simultaneously.

Abstract: Methods for fabricating FinFET structures having gate structures of different gate widths are provided. The methods include the formation of sidewall spacers of different thicknesses to define gate structures of the FinFET structures with different gate widths. The width of a sidewall spacer is defined by the height of the structure about which the sidewall spacer is formed, the thickness of the sidewall spacer material layer from which the spacer is formed, and the etch parameters used to etch the sidewall spacer material layer. By forming structures of varying height, forming the sidewall spacer material layer of varying thickness, or a combination of these, sidewall spacers of varying width can be fabricated and subsequently used as an etch mask so that gate structures of varying widths can be formed simultaneously.

Abstract: A semiconductor device fabrication process includes forming a gate of a transistor on a semiconductor substrate using a hard mask. The hard mask is selectively removed in one or more selected regions over the gate. The removal of the hard mask in the selected regions allows the gate to be connected to an upper metal layer through at least one insulating layer located substantially over the transistor. Conductive material is deposited in one or more trenches formed through the at least one insulating layer. The conductive material forms a local interconnect to the gate in at least one of the selected regions.

Abstract: Improved SRAMs are formed with significantly reduced local interconnect to gate shorts, by a technique providing bidirectional, self-aligned local interconnects, employing a gate hard mask over portions of the gates not connected to the local interconnects. Embodiments include forming a gate hard mask over gates, forming bidirectional trenches overlying portions of the gate electrodes and active silicon regions, etching the hard mask layer to expose regions of the gate electrodes that are to connect to local interconnects, and filling the trenches with conductive material to form self-aligned local interconnects.

Abstract: Methods for fabricating FinFET structures having gate structures of different gate widths are provided. The methods include the formation of sidewall spacers of different thicknesses to define gate structures of the FinFET structures with different gate widths. The width of a sidewall spacer is defined by the height of the structure about which the sidewall spacer is formed, the thickness of the sidewall spacer material layer from which the spacer is formed, and the etch parameters used to etch the sidewall spacer material layer. By forming structures of varying height, forming the sidewall spacer material layer of varying thickness, or a combination of these, sidewall spacers of varying width can be fabricated and subsequently used as an etch mask so that gate structures of varying widths can be formed simultaneously.

Abstract: A decoupling circuit disposed between a first rail and a second rail, where a third power rail is disposed between the first and second rails. A resistor having a first electrode and a second electrode is disposed between the first and second rails. Two capacitors are disposed between the first and second rails. The resistor is connected to the third rail and the two capacitors. In this manner, the two capacitors are connected in series with respect to the resistor, and in parallel with respect to one another. A first of the two capacitors is connected to the first rail, and a second of the two capacitors is connected to the second rail. At least one of the resistor and the two capacitors is disposed at least in part beneath the third rail.

Abstract: A method for analyzing an electrical characteristic of wire segments configured as one or more power meshes in an integrated circuit (IC) core comprising the steps of (A) specifying design information corresponding to the power meshes, (B) specifying at least one type of analysis to be performed, where the analysis comprises (i) generating a file corresponding to the IC core in a format compatible with an electronic circuit simulator and (ii) calculating the electrical characteristic of the wire segments via the circuit simulator, and (C) displaying the calculated electrical characteristic.

Abstract: Methods are described for forming an integrated circuit having multiple devices, such as transistors, with respective element lengths. The methods include a new CAD flow for producing masks used for exposing sidewall spacers which are to be etched to a smaller base width than other sidewall spacers and which in turn are used as an etch mask to form gate structures with smaller element lengths than those formed from the other sidewall spacers.

Abstract: Methods for fabricating FinFET structures having gate structures of different gate widths are provided. The methods include the formation of sidewall spacers of different thicknesses to define gate structures of the FinFET structures with different gate widths. The width of a sidewall spacer is defined by the height of the structure about which the sidewall spacer is formed, the thickness of the sidewall spacer material layer from which the spacer is formed, and the etch parameters used to etch the sidewall spacer material layer. By forming structures of varying height, forming the sidewall spacer material layer of varying thickness, or a combination of these, sidewall spacers of varying width can be fabricated and subsequently used as an etch mask so that gate structures of varying widths can be formed simultaneously.

Abstract: A decoupling circuit disposed between a first rail and a second rail, where a third power rail is disposed between the first and second rails. A resistor having a first electrode and a second electrode is disposed between the first and second rails. Two capacitors are disposed between the first and second rails. The resistor is connected to the third rail and the two capacitors. In this manner, the two capacitors are connected in series with respect to the resistor, and in parallel with respect to one another. A first of the two capacitors is connected to the first rail, and a second of the two capacitors is connected to the second rail. At least one of the resistor and the two capacitors is disposed at least in part beneath the third rail.

Abstract: A system and method for designing a complex electronic circuit by simulating blocks of the circuit using various simulators to produce a net list, designing the physical layout of the circuit using a layout tool that produces a layout verses schematic reference file, mapping the reference file to the net list to create a mapping file, and analyzing the mapping file to verify that the layout meets various criteria. Each block may be verified using simulation tools that are appropriate for that piece of the overall circuit, and using conditions that may maximize the strain on the circuit. The results from the simulations are compared to the physical layout to determine if the physical layout is able to properly conduct the electrical signals.

Abstract: A method and firmware for avoiding timing violations resulting from process defects in a backfilled metal layer of an integrated circuit includes steps of receiving as input timing information for an integrated circuit design including at least one metal layer and a plurality of signal wires and dummy metal wires in the metal layer, finding at least one of a setup time and a hold time for each signal wire in the metal layer from the timing information, identifying a timing-critical signal wire from at least one of the setup time and the hold time for one of the signal wires that would produce a timing violation in the signal wire when the signal wire is shorted to a dummy metal wire by a process defect in the metal layer, calculating at least one of a wire width, a fracture interval, and a spacing for modifying the dummy metal wire to avoid the timing violation in the timing-critical signal wire, and generating as output at least one of the wire width and the fracture interval for the dummy metal wire.

Abstract: A method and firmware for avoiding timing violations resulting from process defects in a backfilled metal layer of an integrated circuit includes steps of receiving as input timing information for an integrated circuit design including at least one metal layer and a plurality of signal wires and dummy metal wires in the metal layer, finding at least one of a setup time and a hold time for each signal wire in the metal layer from the timing information, identifying a timing-critical signal wire from at least one of the setup time and the hold time for one of the signal wires that would produce a timing violation in the signal wire when the signal wire is shorted to a dummy metal wire by a process defect in the metal layer, calculating at least one of a wire width, a fracture interval, and a spacing for modifying the dummy metal wire to avoid the timing violation in the timing-critical signal wire, and generating as output at least one of the wire width and the fracture interval for the dummy metal wire.

Abstract: An integrated circuit is provided, which includes a transistor device under test, an AC drive circuit, an AC bias circuit and a DC bias circuit. The AC drive circuit generates an AC drive signal. The AC bias circuit biases the transistor device under AC bias conditions in response to the AC drive signal. The DC bias circuit biases the transistor device under DC bias conditions. A switch circuit selectively couples the transistor device to the AC bias circuit in an AC stress mode and to the DC bias circuit in a DC measurement mode.

Abstract: A system and method for evaluating multiple corner case static timing analyses. For each node within the analysis, the variability and margin of the node is used to create a risk factor that is used to identify nodes for further analysis. In some cases, a subset of nodes may be selected for static timing analysis with several additional corner cases. The variability of the node may be determined by the difference between the maximum and minimum value of the node between corner case analyses. The margin may be determined by the difference between the actual timing and the required timing. Various ratios using variability and margin may be used to identify those nodes on which to perform further analysis.

Abstract: A method for analyzing electromigration and voltage drop effects in wire segments forming a power-bus grid of an integrated circuit. A floor plan design is created by mapping wire segments to various metal layers in the IC core. Digital, analog, and memory power zones indicating the power consumption of regions within the core are also mapped to the core. An equivalent circuit of the floor plan is generated in a netlist. The netlist is simulated, with the current density and voltage drop of power-bus wire segments calculated. Calculated current density and voltage drop values are analyzed in the floor plan design using a color map to indicate the current density and voltage drop levels of the wire segments. The designer can modify the floor plan design quickly and easily if the calculated current density and voltage drop values indicate potential electromigration or voltage drop problems.