Abstract: A high performance bipolar transistor and a method of fabrication. Base resistance is reduced by a self-aligned silicide formed in the single-crystal region of the extrinsic base, thereby eliminating the polysilicon to single-crystal contact resistance as well as shunting the resistance of the single-crystal extrinsic base region. Oxide from the sidewall of the polysilicon local interconnection is selectively removed prior to silicide formation. Therefore, selected sidewalls of the poly interconnect layer also becomes silicided. This results in significant reductions in resistance of the interconnection, particularly for sub-micron geometries. Improved techniques for forming field oxide regions and for forming base regions of bipolar transistors are also disclosed.

Abstract: A BiCMOS device is revealed. The BiCMOS device achieves improved performance through the use of wrap-around silicide contacts, improved MOS gate formation, the use of n- and p-type LDD's, the formation of very shallow base regions in bipolar transistors, and through separate implants for base regions of the bipolar transistors and source/drains of the MOSFETS.

Abstract: An improved Schottky barrier diode for increasing the alpha particle resistance of static random access memories includes an extra implanted N-type region at the surface of the epitaxial layer to increase the impurity concentration there to about 1.times.10.sup.19 atoms per cubic centimeter. In one device, arsenic is employed to overcompensate a guard ring where the Schottky diode is to be formed, while in another device phosphorus is employed and the guard ring is not overcompensated. The resulting Schottky diodes, when employed in the static random access memory cells, dramatically increase the alpha particle resistance of such cells, while also substantially decreasing the access time.