Abstract: A magnetic and/or electric field may be generated around collector optics in an EUV lithography system to deflect debris particles from the reflective surfaces of the optics. The magnetic and/or electric field may be generated by a solenoid structure around the optics or by passing current through inner an outer shells in a nested shell arrangement.

Abstract: Electric fields may be advantageously used in various steps of photolithographic processes. For example, prior to the pre-exposure bake, photoresists that have been spun-on the wafer may be exposed to an electric field to orient aggregates or other components within the unexposed photoresist. By aligning these aggregates or other components with the electric field, line edge roughness may be reduced, for example in connection with 193 nanometer photoresist. Likewise, during exposure, electric fields may be applied through uniquely situated electrodes or using a radio frequency coil. In addition, electric fields may be applied at virtually any point in the photolithography process by depositing a conductive electrode, which is subsequently removed during development. Finally, electric fields may be applied during the developing process to improve line edge roughness.

Abstract: An embodiment of the present invention includes a technique to provide a highly absorptive resist. A resist is formed using a highly absorbing material. The resist is thinned to a pre-determined thickness used as an imaging layer. The efficiency of a photoactive acid generator (PAG) is improved to capture secondary electrons produced by an ionizing radiation in the resist.

Abstract: An extreme ultraviolet (EUV) pellicle including a thin film or membrane and a supportive wire mesh. The pellicle allows EUV radiation to pass through the pellicle to a reticle but prevents particles from passing through the pellicle. A buffer gas supports the film against the wire mesh. The film or membrane may be embedded with support fibers or beams.

Abstract: Erosion of material in an electrode in a plasma-produced extreme ultraviolet (EUV) light source may be reduced by treating the surface of the electrode. Grooves may be provided in the electrode surface to increase re-deposition of electrode material in the grooves. The electrode surface may be coated with a porous material to reduce erosion due to brittle destruction. The electrode surface may be coated with a pseudo-alloy to reduce erosion from surface waves caused by the plasma in molten material on the surface of the electrode.

Abstract: A light source chamber in an Extreme Ultraviolet (EUV) lithography system may include a secondary plasma to ionize debris particles created by the light source and a foil trap to trap the ionize particles to avoid contamination of the collector optics in the chamber.

Abstract: Erosion-resistive coatings are provided on critical plasma-facing surfaces of an electrical gas plasma head for an EUV source. The erosion-resistive coatings comprise diamond and diamond-like materials deposited onto the critical plasma-facing surfaces. A pure diamond coating is deposited onto the plasma exposed insulator surfaces using, for example, a chemical vapor deposition processes. The diamond coating is made conductive by selective doping with p-type material, such as, but not limited to, boron and graphite.

Abstract: A method of forming a device feature using an extreme ultraviolet (EUV) imaging layer (or a sub-deep ultraviolet imaging layer) and one or more other masks layers. The method includes forming a device feature layer; forming a photoresist layer over the device feature layer; forming a contact mask layer (CML) over the photoresist layer; forming an extreme ultraviolet (EUV) imaging layer over the CML; forming a first opening through the EUV imaging layer to expose a first underlying region of the CML; forming a second opening through the CML to expose a second underlying region of the photoresist layer, wherein the second opening is situated directly below the first opening; forming a third opening through the photoresist layer to expose a third underlying region of the device feature layer, wherein the third opening is situated directly below the second opening; forming a fourth opening through the device feature material layer, wherein the fourth opening is situated directly below the third opening.

Abstract: An extreme ultraviolet (EUV) lithography system may include a spectral purity filter including diffractive gratings. The diffractive gratings may be formed in a silicon substrate using anisotropic etching techniques to produce smooth, flat facets defined by (111) crystallographic planes.

Abstract: In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.

Abstract: Erosion-resistive coatings are provided on critical plasma-facing surfaces of an electrical gas plasma head for an EUV source. The erosion-resistive coatings comprise diamond and diamond-like materials deposited onto the critical plasma-facing surfaces. A pure diamond coating is deposited onto the plasma exposed insulator surfaces using, for example, a chemical vapor deposition processes. The diamond coating is made conductive by selective doping with p-type material, such as, but not limited to, boron and graphite.

Abstract: Apparatus comprising a plasma source to generate a spectrum of radiation that includes extreme ultraviolet radiation, a reflector to generate a beam of extreme ultraviolet radiation from the spectrum of radiation, and a thin film to pass at least a portion of the extreme ultraviolet radiation.

Abstract: Erosion-resistive coatings are provided on critical plasma-facing surfaces of an electrical gas plasma head for an EUV source. The erosion-resistive coatings comprise diamond and diamond-like materials deposited onto the critical plasma-facing surfaces. A pure diamond coating is deposited onto the plasma exposed insulator surfaces using, for example, a chemical vapor deposition processes. The diamond coating is made conductive by selective doping with p-type material, such as, but not limited to, boron and graphite.

Abstract: Numerous embodiments of a debris mitigation device are disclosed. One embodiment of the claimed subject matter may comprise a debris mitigation device for use in photolithography processes. In one embodiment, the debris mitigation device comprises a foil trap device. The foil trap device, in this embodiment, comprises a plurality of electrically conductive elements and one or more mounting devices, where the plurality of electrically conductive elements are coupled to the one or more mounting devices in such as way as to provide a space between one or more adjacent elements. In this embodiment, the elements are foil elements, and adjacent foil elements carry alternating potentials.

Abstract: Apparatus comprising a plasma source to generate a spectrum of radiation that includes extreme ultraviolet radiation, a reflector to generate a beam of extreme ultraviolet radiation from the spectrum of radiation, and a thin film to pass at least a portion of the extreme ultraviolet radiation.

Abstract: An extreme ultraviolet (EUV) lithography system may include a spectral purity filter including diffractive gratings. The diffractive gratings may be formed in a silicon substrate using anisotropic etching techniques to produce smooth, flat facets defined by (111) crystallographic planes.

Abstract: A method and system for cleaning collector optics in a light source chamber. In producing, for example, extreme ultraviolet light for lithography, debris such as tungsten can accumulate on optical components near a light source in the light source chamber.