Abstract: A semiconductor laser having a single lasing element or multiple lasing elements is provided with a structural feature in at least one cladding region of the laser that permits partial compositional disordering upon the application of impurity induced disordering (IID) techniques, which disordering is of sufficient magnitude to bring about deformity in the compositional structure of the deposited layer(s) of the laser resulting in changes in the refractive index properties of the induced disordered regions compared to adjacent and remaining undisordered regions thereby creating optical cavities functioning as optical waveguides for propagating radiation generated upon lasing. The structural feature that may be utilized may be a disordering layer having low refractive index properties but not being sufficiently thin to exhibit quantum size effects. Such a feature may comprise a thin layer, e.g.

Abstract: A phased array semiconductor lasers provides fundamental or preferred 1.sup.st supermode operation wherein laser fabrication is carried out via a single, continuous fabricating process followed by impurity induced disordering (IID). Fundamental supermode selection is accomplished by providing a multiquantum well superlattice as a cladding layer in the phased array laser structure in combination with the conventional single semiconductor cladding layer, which is followed by spatially disposed impurity induced disordering regions extending through the superlattice to form spatially formed regions capable of providing higher gain compared to adjacent regions not experiencing impurity induced disordering.

Abstract: A hybrid index/gain guided semiconductor laser has a gain guide type body with index waveguide attributes is characterized by having two regions of current confinement means. The first of these regions contains primary current confinement means and at least one second region which includes a pair of current confinement means parallel to each other and axially offset relative to the axis of the primary current confinement means and extend from the other laser facet toward the first region. The axially offset current confinement means in the second region provide regions of lower refractive index in the laser structure compared to the region of the laser optical cavity established between the offset current confinement means and, as a result, function as an index optical waveguide for the laser. The first region may be electrically isolated from the second region so that the first region is independently pumped relative to the second region.

Abstract: A semiconductor quantized layered structure comprising first and second different semiconductor materials comprising compound semiconductors from both the Group III and Group V elements and forming a plurality of alternate layers, each interfaced to its adjacent layer in a semiconductor homojunction or heterojunction. The bottom of the conduction bands of the first and second materials are at different energy levels and the tops of the valence bands of the first and second materials are at different energy levels. The bottoms of the conduction bands of the first and second materials form a plurality of serially arranged potential wells and barriers due to differences in the band structures of the different materials forming alternate layers and the interfacing of the layers forming heterojunctions so that the thinness of the layers will spatially localize electrons to obtain quantized electron states in one dimension transverse to the longitudinal extent of said layers.

Abstract: The method of controlling the modeling of the well energy band profile by interdiffusion comprises at least one thin disordering component layer contiguous with a surface of the quantum well layer and including a high content of a disordering component therein compared to the level of content thereof in semiconductor layers immediately adjacent thereto. The disordering components are Al and Ga in the GaAs/GaAlAs regime.

Abstract: A method of converting selected areas of a semiconductor structure into a disordered alloy comprising a well feature epitaxially deposited on a semiconductor support, the well feature comprising at least one first well layer of narrow bandgap material deposited adjacent to at least a second layer of wider bandgap material or interposed between second and third layers of wider bandgap material. The disordered alloy exhibits higher bandgap and lower refractive index properties than the first layer.

Abstract: An electro-optic line printer comprises a recording medium, a multigate line modulator for printing picture elements or pixels in spatially predetermined positions along a printing axis and an LED side-facet source characterized by having high output intensity and a uniform far field emission and optical means to collimate the far field emission in the tangential direction and focus the near field in the sagittal direction onto the modulator. The optical means comprises a first lens system to collect the light emitted from the LED source in both the tangential and sagittal directions and a second toric lens to collimate the light into a sheetlike beam in the tangential direction and to focus the light in the sagittal direction to a line image at the modulator. Imaging means is optically aligned between the modulator and the recording medium for imaging the modulator onto the recording medium.

Abstract: A phased array semiconductor laser comprises a plurality of spatially disposed multiple lasing elements formed relative to an active region providing optical cavities and multi-emitters for light wave generation and propagation under lasing conditions. The optical field of the lasing elements are coupled into the optical cavities of adjacent lasing elements to provide a phased locked condition across the array. Structural means associated with the laser causes regions between the optical cavities to produce higher gain in those between regions as compared to the gain experienced in the optical cavities by spatially modulating the optical overlap of the optical field of each of the lasing elements laterally across the array so as to favor the fundamental supermode over the other potential supermodes of the array laser.

Abstract: Integrated laser diode devices are utilized as repeater elements and logic circuit elements in fiber optic and other light transfer systems. One embodiment discloses a six layer device (10) which is triggered not by an external electrical gating source, but by an external light source (8, 9) as from an optical fiber. Another embodiment operates a laser diode in a bilateral mode. That is, depending on the polarity of the applied voltage bias V to the device (50), two separate light pulses are emitted from different regions (56, 52) of the crystal. A further embodiment utilizes the semiconductor laser as a logical AND function. When the electrical bias (V) of the device (60) is set so that when at least two external light sources (67, 68) are applied, the device will emit laser light (69). Still another embodiment utilizes two semiconductor laser devices (911, 913) as an astable optical multivibrator (90).

Abstract: A semiconductor laser characterized by having a combination index and gain guiding region in the optical cavity established between end facets of the laser.

Abstract: Integrated laser diode devices are utilized as repeater elements and logic circuit elements in fiber optic and other light transfer systems. One embodiment discloses a six layer device (10) which is triggered not by an external electrical gating source, but by an external light source (8, 9) as from an optical fiber. Another embodiment operates a laser diode in a bilateral mode. That is, depending on the polarity of the applied voltage bias V to the device (50), two separate light pulses are emitted from different regions (56, 52) of the crystal. A further embodiment utilizes the semiconductor laser as a logical AND function. When the electrical bias (V) of the device (60) is set so that when at least two external light sources (67, 68) are applied, the device will emit laser light (69). Still another embodiment utilizes two semiconductor laser devices (911, 913) as an astable optical multivibrator (90).

Abstract: An injection laser is provided with quantum size effect transparent waveguiding. The laser includes an active layer having an active region wherein carrier recombination occurs under lasing conditions. The active layer has passive waveguide end regions between the active region and the laser end facets that are sufficiently thin in layer thickness to form a transparent waveguide having a quantum well effect so that radiative recombination will not occur in these regions.

Abstract: An optical scanner with a thin waveguide medium on a substrate includes means to couple a wide collimated beam of radiation into one end of the medium. A periodic array of substantially parallel, spaced electrodes are associated with one major surface of the medium. At least a portion of their electrode lengths extend in a direction substantially parallel with the direction of radiation propagating through the medium. Supply means is provided to apply voltages in a pattern to the electrodes which varies from one electrode to the next adjacent electrode to a predetermined value over several of the electrodes and the same pattern of voltages or a similar pattern of different voltages is applied over several of the next adjacent electrodes up to the predetermined value. In this manner, the pattern is completed across the electrode array to produce a corresponding approximation of a desired phase retardation along a phase front of the propagating radiation in the medium.

Abstract: An injection laser includes a plurality of contiguous semiconductor layers deposited on a substrate, one of the layers being an active layer and having a lower bandgap and higher index of refraction relative to at least cladding layers immediately adjacent to the active layer. The active layer is provided with an active region to permit carrier recombination and support radiation propagating under lasing conditions in a optical waveguide cavity established between transverse end facets of the laser. Means is incorporated on and into the surface of the laser to form a current confinement region to the active region. The extremities of the active region fall short of the end facets so that the regions of the active layer between the active region function as a passive waveguide for the propagating radiation in the optical cavity.

Abstract: Integrated laser diode devices are utilized as repeater elements and logic circuit elements in fiber optic and other light transfer systems. One embodiment discloses a six layer device (10) which is triggered not by an external electrical gating source, but by an external light source (8, 9) as from an optical fiber. Another embodiment operates a laser diode in a bilateral mode. That is, depending on the polarity of the applied voltage bias V to the device (50), two separate light pulses are emitted from different regions (56, 52) of the crystal. A further embodiment utilizes the semiconductor laser as a logical AND function. When the electrical bias (V) of the device (60) is set so that when at least two external light sources (67, 68) are applied, the device will emit laser light (69). Still another embodiment utilizes two semiconductor laser devices (911, 913) as an astable optical multivibrator (90).

Abstract: Various mask configurations and techniques for their employment in a chemical vapor deposition system are disclosed. These masks can be utilized in the fabrication of semiconductor devices. The masks have at least one aperture therein and may be either removed after device processing or formed as an integral part of the semiconductor device being fabricated. In either case, semiconductor devices can be formed with one or more layers characterized by desired spatial variations in their thickness and/or contour. The integral masking techniques provide for incorporated self alignment which simplifies device processing. The fabrication of semiconductor injection lasers are disclosed as examples of applications of the masking techniques.

Abstract: Semiconductor devices, e.g., semiconductor injection lasers, are fabricated via chemical vapor deposition having one or more layers of semiconductor material of predetermined lateral spatial thickness variation or tapered contour and are formed by means of pyrolyzation of vapor mixtures of semiconductor materials deposited as a layer or layers through an aperture of a mask employed during deposition thereof.

Abstract: In a semiconductor injection laser with a nonplanar pattern in the substrate, growth of the plurality of layers comprising the laser structure is accomplished in vapor phase epitaxy to produce a lateral spatial thickness variation (LSTV) in the active region of the laser. The LSTV profile is one of or combination of the profiles disclosed in FIG. 2, producing an effective, although small, lateral refractive index variation in the active region, thereby permitting the maintenance of the lowest order transverse mode along the plane of the active region.

Abstract: Heterostructure injection lasers include a combination optically coupled active and passive waveguide means forming an optically confining channel or strip between end facets. A passive or transparent waveguide means in the vicinity of the laser facets optically confines the radiation thereto in both dimensions transverse to the direction of propagation. The passive means is coupled to an active region of the laser which also optically confines the propagating radiation to the active region in both dimensions transverse to the direction of propagation. The active strip does not extend to the end facets of the laser. The combination active and passive means provides for high power, low divergence output beam, fundamental transverse mode control, lower operational current thresholds and the substantial elimination of laser astigmatism found in strip buried heterostructure lasers.

Abstract: A single component transceiver device for a linear single fiber optical network which allows both reception and transmission of light information onto a linear data line. One embodiment discloses a light source 10 which would apply modulated light signals, or an unmodulated light carrier, onto an optical medium at the end 12 thereof. This light would reach point 14 along the optical fiber and be detected and/or further modulated by diode 16 and this light information is introduced unidirectionally onto the optical fiber. A second embodiment would include a diode 52 along an optical fiber which would detect and/or radiate light signals bidirectionally along an optical fiber. A proposed light transceiver 90 which could be utilized with the above two embodiments is also disclosed.