Abstract: A monolithic laser scanning device includes a semiconductor laser region integral with but spaced from an optical scanning region. These regions are optically coupled which may include a continuous transparent or passive waveguide medium. The periodic array of substantially parallel spaced electrodes are associated with the waveguide medium in the optical scanning region. The electrodes extend in the same direction as the propagating radiation in the medium. The voltages are applied in a pattern to the electrodes which voltages vary from one electrode to the next adjacent electrode to a predetermined value over several of the electrodes. The same pattern of voltages or a similar pattern of different voltages is applied over several of the next adjacent electrodes to the predetermined value until the pattern is completed across the electrode array to produce a corresponding approximation of a desired phase retardation along the phase front of the propagating radiation.

Abstract: A fiber optic device basically comprising an optical fiber/interference filter combination finds useful application in optical communication systems for wavelength selection or bandwidth selection from a multiwavelength light source or emitter. If the emitter is a semiconductor laser, the device may be also employed to provide single longitudinal mode control at the selected wavelength or bandpass.

Abstract: Integrated laser diode devices are disclosed in which small light signals or small current signals applied thereto produce large changes in the output. One embodiment discloses a homostructure optical device with symmetric optically excited regions. Another embodiment discloses a single-heterostructure optical device with a single optically excited region. Another embodiment discloses a double-heterostructure optical device with dual optically excited regions. A further embodiment integrates an electronic device with a diode laser in accordance with the principles of the present invention. Still another embodiment discloses an optical triode laser device in which a small input light results in an amplified light output signal.

Abstract: In an injection laser of the type having a mesa provided on the substrate, at least one or more radiation confinement layers is provided in the laser and with the active layer form an enlarged optical cavity (LOC) for radiation propagation to focus the beam produced into a narrow index guided filament.

Abstract: Enhanced higher order mode discrimination is obtained in injection lasers with lateral spatial thickness variations (LSTV) in the active layer with (1) the proper refractive index quantitative differences in the cladding layers contiguous with the active layer and (2) by fabricating the active layer to have a rapidity in its LSTV from the maximum thickness to the minimum thickness that is very gradual.

Abstract: In a heterostructure injection laser having an active layer sandwiched by a pair of intermediate index layers, a very thin low refractive index and high bandgap may be employed between at least active layer and one intermediate layer or at least contiguous with a surface of at least one intermediate layer remote from the active layer. These thin layers may be applied in various positional combinations to produce desired effects on fundamental mode guiding.

Abstract: A heterostructure semiconductor laser is characterized by having a channeled mesa contiguous with the top surface of the laser substrate. The channeled mesa comprises an elongated mesa with an elongated channel formed in the top surface of the mesa structure. The epitaxial growth of semiconductor layers over the channeled mesa produces layers having uniform thickness with smooth facet like texture and without layer surface irregularities. The channeled mesa may also be employed in the fabrication of nonplanar large optical cavity lasers.

Abstract: Integrated laser diode devices are utilized as repeater elements and logic circuit elements in fiber optic and other light transfer systems. One embodiment discloses a six layer device (10) which is triggered not by an external electrical gating source, but by an external light source (8, 9) as from an optical fiber. Another embodiment operates a laser diode in a bilateral mode. That is, depending on the polarity of the applied voltage bias V to the device (50), two separate light pulses are emitted from different regions (56, 52) of the crystal. A further embodiment utilizes the semiconductor laser as a logical AND function. When the electrical bias (V) of the device (60) is set so that when at least two external light sources (67, 68) are applied, the device will emit laser light (69). Still another embodiment utilizes two semiconductor laser devices (911, 913) as an astable optical multivibrator (90).

Abstract: Improved lateral carrier and optical confinement is achieved in heterostructure diodes and lasers having a Fabry-Perot cavity transverse to the plane of the p-n junction of the device. Structural features during fabrication improve carrier confinement to the active region in the established optical cavity. Current confinement means is also fabricated above and below the active region to concentrate the current density to the active region in the optical cavity and thereby improve the overall gain of the device. Such confinement also enhances optical confinement along the cavity. Several reflector structures are disclosed for employment at the cavity ends to provide optical feedback.

Abstract: A solid state laser in which transverse mode control is achieved by a layer of non-uniform thickness adjacent the laser active region and longitudinal mode control is achieved by a periodic structure formed in the laser substrate. The layer of non-uniform thickness is provided by forming the layer on a channeled substrate, and the teeth of the periodic structure extend in a direction transverse to the direction of the channel.

Abstract: A semiconductor injection laser is mounted on a silicon substrate. An optical detector is integral to the substrate and aligned at oblique angles relative to the path of the light from one of the light emitting facets of the laser. The detector may be connected to the current control circuit for the laser to provide a feedback signal which is proportional to the light deflected from the facet. The transversely disposed detector may also function to detect light from another source as part of an optical communication system. The detector may be a Schottky barrier or a p-n junction.

Abstract: A laser array comprised of a plurality of stacked emitting or active regions which are in sufficiently close contact to each other that light from each active region is coupled to the light from the adjacent active regions to form a phase-locked laser array with low composite beam divergence perpendicular to the plane of the rectifying junction of the active regions.

Abstract: A channelled substrate diode laser in which transverse and longitudinal mode control is achieved by having the laser current profile flat over the substrate channel. A flat current profile over the substrate channel, which is achieved by having the width of the path of the pump current greater than the width of the channel, causes waveguiding to be influenced only by a fixed channel guiding factor.

Abstract: Mode control both for longitudinal and fundamental transverse modes can be achieved by employing a mesa structure on the laser substrate during fabrication. The mesa will provide significant variations in the thickness of one or more hetrostructure waveguiding layers that may be fabricated on the mesa formed substrate. As a result, the equivalent index of refraction for each waveguiding layer will be different. For longitudinal mode operation, a branching directional coupler can be directly fabricated during preferential LPE growth due to the presence of the mesa formed on the substrate. For fundamental transverse mode operation, oscillation can be restricted to a high gain region in a waveguiding layer due to the presence of the mesa and thickness variation and curvature in the active layer. Connected or juxtaposed stripe contact geometry can also be employed to provide a multicavity effect in a light waveguiding layer to enhance longitudinal mode selectivity.

Abstract: A monolithic laser device produces a plurality of spatially displaced emitting cavities in an active layer of a semiconductor body acting as a waveguide for light wave propagation under lasing conditions. Various means are disclosed to deflect and directly couple a portion of the optical wave propagation into one or more different spatially displaced emitting cavities to improve coherence and reduce beam divergence.

Abstract: An injection laser of the multilayer planar type, such as, heterostructure GaAs:GaAlAs lasers are provided with offset geometry in the configuration of the stripe on surface of the device to stabilize the propagating optical beam such that the power output versus current pumping characteristic is linear over an extended range of operating currents. Many types of stripe offset geometries are disclosed which contribute in various degrees to such transverse mode stabilization.

Abstract: By employing a channel in the substrate of a GaAs-GaAlAs injection laser, the active waveguiding layer of the laser can be made to have constricted regions above the shoulders of the substrate channel. The constricted regions are characterized as being of thin cross section as compared to immediate adjacent areas of the active layer and may be provided at one terminus point of the region with a pinch-off in the active layer. This configuration, upon proper stripe placement and current confinement through this region into the substrate channel will enhance light wave propagation in this region and improve fundamental transverse mode operation.

Abstract: A light beam scanner of the moving interference fringe pattern type which includes a body of semiconductor material having a source of coherent radiation and wave guides for guiding the coherent radiation along a plurality of spatially displaced paths which are optically uncoupled, and means associated with the spatially displaced paths for producing relative phase changes between radiation in the different paths whereby interference fringes in the far field are spatially scanned. In addition, wavelength modulation of the laser over a range of about 80 A can be achieved. The source of the coherent radiation can be a single laser or a plurality of optically coupled lasers, and the optical uncoupling can be achieved by spatial displacement of the paths or by insertion of a high loss medium between the paths.

Abstract: A laser beam scanner in which a single-lobe propogates radiation pattern through an electrically variable asymmetric electrical charge distribution. Because the electrical charge distribution determines the real and imaginary parts of the refractive index of the material through which the radiation pattern propogates the radiation pattern may be deflected by changing the charge distribution profile.

Abstract: Mode control both for longitudinal and fundamental transverse modes can be achieved by employing a mesa structure on the laser substrate during fabrication. The mesa will provide significant variations in the thickness of one or more heterostructure waveguiding layers that may be fabricated on the mesa formed substrate. As a result, the equivalent index of refraction for each waveguiding layer will be different. For longitudinal mode operation, a branching directional coupler can be directly fabricated during preferential LPE growth due to the presence of the mesa formed on the substrate. For fundamental transverse mode operation, oscillation can be restricted to a high gain region in a waveguiding layer due to the presence of the mesa and thickness variation and curvature in the active layer. Connected or juxtaposed stripe contact geometry can also be employed to provide a multicavity effect in a light waveguiding layer to enhance longitudinal mode selectivity.