Abstract: A turbomachine frame member including an annular inner hub and a concentric annular outer casing that is spaced radially outwardly from the inner hub to define an annular flow passageway. A plurality of substantially radially-extending, circumferentially-spaced struts interconnect the inner hub and outer casing. The struts are connected to the outer casing by respective pairs of connecting bolts that pass through the outer casing and into the struts to engage barrel nuts.

Abstract: Both a non-volatile memory (NVM) and a dynamic nanocrystal memory (DNM) are integrated on a semiconductor substrate. Control gates and control dielectrics with embedded nanocrystals or discrete storage elements are formed over differing thicknesses of tunnel dielectrics to form the two memories. Source and drain regions are formed within the semiconductor substrate adjacent to the tunnel dielectrics. Various methods can be used to form a thin tunnel oxide and a thick tunnel oxide by adding minimum processing steps.

Abstract: A donor substrate (12) which is patterned to include a donor mesa (18) is bonded to a receiving substrate (20). In a one embodiment, a bulk portion of the donor substrate is removed while leaving a transferred layer (26) bonded to the receiving substrate. The transferred layer is a layer of material transferred from the donor mesa. A portion of receiving substrate can be processed to form a recess (27, 28, or 32) to receive the donor mesa. Alternatively, the transferred layer can be formed over a dummy feature (46) formed on the receiving substrate, either with or without the use of mesas on the donor substrate. In a preferred embodiment, the transferred layer is used to form an optical device such as a photodetector in a semiconductor device. With the invention, bonding can be achieve despite having a non-planar surface on the receiving substrate.

Abstract: A self-aligned magnetic clad bit line structure (274) for a magnetic memory element (240a) and its method of formation are disclosed, wherein the self-aligned magnetic clad bit line structure (274) extends within a trench (258) and includes a conductive material (264), magnetic cladding sidewalls (262) and a magnetic cladding cap (252). The magnetic cladding sidewalls (262) at least partially surround the conductive material (264) and the magnetic cladding cap (252) is substantially recessed within the trench with respect to the top of the trench.

Abstract: Both a non-volatile memory (NVM) and a dynamic nanocrystal memory (DNM) are integrated on a semiconductor substrate. Control gates and control dielectrics with embedded nanocrystals or discrete storage elements are formed over differing thicknesses of tunnel dielectrics to form the two memories. Source and drain regions are formed within the semiconductor substrate adjacent to the tunnel dielectrics. Various methods can be used to form a thin tunnel oxide and a thick tunnel oxide by adding minimum processing steps.

Abstract: A donor substrate (12) which is patterned to include a donor mesa (18) is bonded to a receiving substrate (20). In a one embodiment, a bulk portion of the donor substrate is removed while leaving a transferred layer (26) bonded to the receiving substrate. The transferred layer is a layer of material transferred from the donor mesa. A portion of receiving substrate can be processed to form a recess (27, 28, or 32) to receive the donor mesa. Alternatively, the transferred layer can be formed over a dummy feature (46) formed on the receiving substrate, either with or without the use of mesas on the donor substrate. In a preferred embodiment, the transferred layer is used to form an optical device such as a photodetector in a semiconductor device. With the invention, bonding can be achieve despite having a non-planar surface on the receiving substrate.

Abstract: A heteroepitaxial structure is made using nanocrystals that are formed closer together than normal lithography patterning would allow. The nanocrystals are oxidized and thus selectively etchable with respect to the substrate and surrounding material. In one case the oxidized nanocrystals are removed to expose the substrate at those locations and selective epitaxial germanium is then grown at those exposed substrate locations. The inevitable formation of the misfit dislocations does minimal harm because they are terminated at the surrounding material. In another case the surrounding material is removed and the germanium is epitaxially grown at the exposed substrate where the surrounding material is removed. The resulting misfit dislocations in the germanium terminate at the oxidized nanocrystals.

Abstract: A heteroepitaxial structure is made using nanocrystals that are formed closer together than normal lithography patterning would allow. The nanocrystals are oxidized and thus selectively etchable with respect to the substrate and surrounding material. In one case the oxidized nanocrystals are removed to expose the substrate at those locations and selective epitaxial germanium is then grown at those exposed substrate locations. The inevitable formation of the misfit dislocations does minimal harm because they are terminated at the surrounding material. In another case the surrounding material is removed and the germanium is epitaxially grown at the exposed substrate where the surrounding material is removed. The resulting misfit dislocations in the germanium terminate at the oxidized nanocrystals.

Abstract: A self-aligned magnetic clad bit line structure (274) for a magnetic memory element (240a) and its method of formation are disclosed, wherein the self-aligned magnetic clad bit line structure (274) extends within a trench (258) and includes a conductive material (250), magnetic cladding sidewalls (262) and a magnetic cladding cap (252). The magnetic cladding sidewalls (262) at least partially surround the conductive material (264) and the magnetic cladding cap (252) is substantially recessed within the trench with respect to the top of the trench.

Abstract: Both a non-volatile memory (NVM) and a dynamic nanocrystal memory (DNM) are integrated on a semiconductor substrate. Control gates and control dielectrics with embedded nanocrystals or discrete storage elements are formed over differing thicknesses of tunnel dielectrics to form the two memories. Source and drain regions are formed within the semiconductor substrate adjacent to the tunnel dielectrics. Various methods can be used to form a thin tunnel oxide and a thick tunnel oxide by adding minimum processing steps.

Abstract: Both a non-volatile memory (NVM) and a dynamic nanocrystal memory (DNM) are integrated on a semiconductor substrate. Control gates and control dielectrics with embedded nanocrystals or discrete storage elements are formed over differing thicknesses of tunnel dielectrics to form the two memories. Source and drain regions are formed within the semiconductor substrate adjacent to the tunnel dielectrics. Various methods can be used to form a thin tunnel oxide and a thick tunnel oxide by adding minimum processing steps.

Abstract: Method for forming a semiconductor device having an capacitor, where the capacitor is in-laid in a cavity formed in the semiconductor substrate and part of a high density memory. One embodiment first forms a bottom electrode in the cavity and then fills the cavity with a sacrificial layer to allow chemical mechanical polishing (CMP) of at least one of the capacitor electrodes. After removing portions of the bottom electrode and portions of the sacrificial layer, a dielectric layer is formed. A top electrode is then formed over the dielectric layer. The dielectric layer so formed isolates the bottom electrode from the top electrode preventing shorting and leakage currents. In one embodiment, a single top electrode layer is formed for multiple bottom electrodes, reducing the complexity of the memory circuit.

Abstract: The present invention provides a planar light beam orientation device comprising a light source, a beam disperser, and a housing coupled to the light source and holding the beam disperser. The housing is configured to have a beam aperture configured to project a planar beam of light therefrom. The planar light beam orientation device of the present invention is capable of projecting a 360.degree. planar beam of light. The device is particularly useful in the orienting and reorienting of dental casts in a dental surveyor.

Abstract: An improved automatic fill valve assembly that is readily securable in a level position for installation and that has inlets adapted to accept either a toilet tank fill valve or a float type valve inside of the housing of the fill valve assembly. One improvement comprises a flange that defines at least one anchor point so that the entire assembly can be secured in place to an adjacent structure during installation. This arrangement advantageously holds the automatic fill valve assembly in a level position while workers pour cement around it. Another improvement comprises the provision of inlets that can be connected to a water source and are adapted to mount either a float valve assembly or a toilet tank fill valve inside of the fill valve assembly.

Abstract: A method for forming CMOS transistors and ferroelectric capacitors on a single substrate (10) with improved yield begins by forming CMOS transistors (37a, 37b, 40, 42). A hydrogen anneal using 4-5% hydrogen and a remainder nitrogen is performed to reduce dangling atomic bonds at the gate dielectric/substrate interface of the transistors (37a, 37b, 40, 42). A silicon nitride layer (48) is then deposited over the transistors and on the backside of the wafer substrate (10) in order to substantially encapsulate the effects of the hydrogen anneal to the CMOS transistors (37a, 37b, 40, 42). Ferroelectric capacitor layers (54, 58, 60, 62, 64) are formed overlying the nitride layer (48) where the ferroelectric capacitor layers (54, 58, 60, 62, 64) are oxygen annealed in pure O.sub.2. The nitride layer (48) prevents the transistor hydrogen anneal from damaging the ferroelectric material by containing the hydrogen.

Abstract: An improved swimming pool cleaner of the type for submerged random travel generally along the floor and sidewalls of a swimming pool to dislodge and collect debris. The pool cleaner comprises a frame and associated housing through which a suction mast extends with a collection bag mounted at the upper end thereof. First and second wheels are mounted for rotation on a common axis on opposite sides of the housing forwardly of the suction mast, and third and fourth wheels are mounted for rotation on a common axis on opposite sides of the housing rearwardly of the suction mast. The first and second wheels are driven by a water-powered drive train within the housing, and the third and fourth wheels are mounted for freewheeling rotation. A forward end of an upper surface of the housing has a substantially linear sloping portion to reduce the tendency of the cleaner to lift off the submerged surfaces of the swimming pool as the first and second wheels propel the cleaner in the forward direction.

Abstract: An interface adapter enables a replacement controller to be mechanically received in a housing configured for an older model controller having a larger volume. Moreover, the interface adapter enables terminals of the replacement controller having a first configuration to be connected to the contacts of a housing connecter having a second configuration configured to couple with contacts of the older model controller. The interface adapter includes a faceplate having a central aperture for receiving the replacement controller and a pair of sideboard printed circuit boards (PCBs) positioned perpendicular to a surface of the faceplate in spaced parallel relation on opposite sides of the central receiving aperture. A main PCB is electrically and mechanically connected between the sideboard PCBs. The main PCB and the sideboard PCBs have contacts adjacent their ends opposite the faceplate.

Abstract: The present invention is a process for forming a lower capacitor electrode. Specifically, an oxygen tolerant bottom electrode layer (312) is formed over a conductive plug (216). A dielectric layer (420) is deposited and partially removed in order to form an inlaid bottom electrode structure. A capacitor dielectric (810) such as BST is formed over the lower electrode (310). The upper electrode (812) is formed over the capacitor dielectric (810) and the resulting stack is patterned in order to form a final capacitive device (916). In another embodiment of the present invention, a hardmask is formed over the bottom electrode (310) and removed prior to the capacitor dielectric (810) being formed.

Abstract: An inductive-write magnetoresistive-read horizontal head for magnetic recording having two polarization conductors. The two polarization conductors are used to simultaneously activate a MR sensor and to disable the write head during the read back process to eliminate the secondary read back signal from the inductive-write head. During the read process, the current through a first conductor biases the MR stripe while current through the second conductor generates an applied field to switch the magnetization of the Permalloy (NiFe) in the write head pole and reduce the permeability. The head incorporates write-wide read-narrow head attributes and has the reliability advantages associated with yoke or recessed MR or GMR structures. The magnetoresistive stripe may be disposed directly in the gap of the heads or it may be recessed.

Abstract: An improved swimming pool cleaner of the type for submerged random travel generally along the floor and sidewalls of a swimming pool to dislodge and collect debris. The pool cleaner comprises a frame and associated housing through which a suction mast extends with a collection bag mounted at the upper end thereof. First and second wheels are mounted for rotation on a common axis on opposite sides of the housing forwardly of the suction mast, and third and fourth wheels are mounted for rotation on a common axis on opposite sides of the housing rearwardly of the suction mast. The first and second wheels are driven by a water-powered drive train within the housing, and the third and fourth wheels are mounted for freewheeling rotation. A forward end of an upper surface of the housing has a substantially linear sloping portion to reduce the tendency of the cleaner to lift off the submerged surfaces of the swimming pool as the first and second wheels propel the cleaner in the forward direction.