Patents by Inventor Robert P. Meagley
Robert P. Meagley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8513111Abstract: A semiconductor structure may be covered with a thermally decomposing film. That film may then be covered by a sealing cover. Subsequently, the thermally decomposing material may be decomposed, forming a cavity.Type: GrantFiled: July 12, 2006Date of Patent: August 20, 2013Assignee: Intel CorporationInventors: Robert P. Meagley, Kevin P. O'Brien, Tian-An Chen, Michael D. Goodner, James Powers, Huey-Chiang Liou
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Patent number: 8003293Abstract: A deliberately engineered placement and size constraint (molecular weight distribution) of photoacid generators, solubility switches, photoimageable species, and quenchers forms individual pixels within a photoresist. Upon irradiation, a self-contained reaction occurs within each of the individual pixels that were irradiated to pattern the photoresist. These pixels may take on a variety of forms including a polymer chain, a bulky cluster, a micelle, or a micelle formed of several polymer chains. Furthermore, these pixels may be designed to self-assemble onto the substrate on which the photoresist is applied.Type: GrantFiled: September 30, 2004Date of Patent: August 23, 2011Assignee: Intel CorporationInventors: Robert P. Meagley, Michael D. Goodner, Bob E. Leet, Michael L. McSwiney
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Patent number: 7875415Abstract: A helical pixilated photoresist includes a photoacid generator, a photoimageable polymer comprising a self-assembly moiety and a solubility switch, the photoimageable polymer having a helical structure. In one embodiment the helical pixilated photoresist is formed of a photoimageable polymer comprising a pyridine-based quencher copolymer and a solubility switch copolymer, wherein the photoimageable polymer has a helical structure formed by pi-stacking of the pyridine-based quencher copolymer. The helical pixilated photoresist is applied to a substrate and irradiated and developed to form a patterned photoresist.Type: GrantFiled: December 30, 2005Date of Patent: January 25, 2011Assignee: Intel CorporationInventor: Robert P. Meagley
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Patent number: 7723008Abstract: A semiconductor process technique to help reduce semiconductor process effects, such as undesired line edge roughness, insufficient lithographical resolution, and limited depth of focus problems associated with the removal of a photoresist layer. More particularly, embodiments of the invention use a photoacid generator (PAG) material in conjunction with a sacrificial light absorbing material (SLAM) to help reduce these and other undesired effects associated with the removal of photoresist in a semiconductor manufacturing process. Furthermore, embodiments of the invention allow a PAG to be applied in a semiconductor manufacturing process in an efficient manner, requiring fewer processing operations than typical prior art techniques.Type: GrantFiled: March 22, 2005Date of Patent: May 25, 2010Assignee: Intel CorporationInventors: Robert P. Meagley, Heidi B. Cao, Kevin P. O'Brien
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Patent number: 7718528Abstract: A semiconductor process technique to help reduce semiconductor process effects, such as undesired line edge roughness, insufficient lithographical resolution, and limited depth of focus problems associated with the removal of a photoresist layer. More particularly, embodiments of the invention use a photoacid generator (PAG) material in conjunction with a sacrificial light absorbing material (SLAM) to help reduce these and other undesired effects associated with the removal of photoresist in a semiconductor manufacturing process. Furthermore, embodiments of the invention allow a PAG to be applied in a semiconductor manufacturing process in an efficient manner, requiring fewer processing operations than typical prior art techniques.Type: GrantFiled: January 5, 2007Date of Patent: May 18, 2010Assignee: Intel CorporationInventors: Robert P. Meagley, Heidi B. Cao, Kevin P. O'Brien
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Patent number: 7678527Abstract: Embodiments of the invention provide methods and compositions for providing photoresists with improved liquid-contact properties. For one embodiment of the invention, a photoresist is provided having one or more constituent components that are resistant to diffusion between the photoresist and an index-matching liquid (IML). For such an embodiment in which the IML is water, a photoresist component is provided that is hydrophobic thus reducing diffusion between the photoresist and the water. In various alternative embodiments of the invention, a photoresist is provided having one or more constituent components that encourage diffusion between the photoresist layer and the IML in such manner as to impart beneficial liquid-contact properties to the photoresist layer. For such an embodiment in which the IML is water, a photoresist is provided having one or more hydrophilic constituents.Type: GrantFiled: October 16, 2003Date of Patent: March 16, 2010Assignee: Intel CorporationInventors: Robert P Meagley, Ernisse S Putna, Wang Yueh
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Patent number: 7658975Abstract: Method and structure for minimizing the downsides associated with microelectronic device processing adjacent porous dielectric materials are disclosed. In particular, chemical protocols are disclosed wherein porous dielectric materials may be sealed by attaching coupling agents to the surfaces of pores. The coupling agents may form all or part of caps on reactive groups in the dielectric surface or may crosslink to seal pores in the dielectric.Type: GrantFiled: December 12, 2003Date of Patent: February 9, 2010Assignee: Intel CorporationInventors: Grant Kloster, Robert P. Meagley, Michael D. Goodner, Kevin P. O'brien
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Patent number: 7615337Abstract: A cap may be formed anisotropically over a photoresist feature. For example, a material, such as a polymer, may be coated over the photoresist feature. If the coated material is photoactive, the cap may be grown preferentially in the vertical direction, creating high aspect ratio structures in some embodiments of the present invention.Type: GrantFiled: August 27, 2004Date of Patent: November 10, 2009Assignee: Intel CorporationInventors: Robert P. Meagley, Michael McSwiney, Michael D. Goodner, Robert Leet, Manish Chandhok
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Patent number: 7615329Abstract: By using a branched long chained chain scission polymer as a photoresist for high resolution extreme ultraviolet (EUV), e-beam or 193 nanometer lithography applications, a relatively higher molecular weight polymer with good mechanical properties may be achieved. In addition, by using chain scission technology, line edge roughness and resolution may be improved at the same time.Type: GrantFiled: March 2, 2006Date of Patent: November 10, 2009Assignee: Intel CorporationInventor: Robert P. Meagley
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Patent number: 7611828Abstract: An adhesion promoter to help reduce semiconductor process effects, such as undesired line edge roughness, insufficient lithographical resolution, and limited depth of focus problems associated with the removal of a photoresist layer. A photoactive adhesion promoter (PAG) is described which helps reduce these and other undesired effects associated with the removal of photoresist in a semiconductor manufacturing process.Type: GrantFiled: November 24, 2008Date of Patent: November 3, 2009Inventor: Robert P. Meagley
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Patent number: 7572732Abstract: Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding dielectric. This particularly useful in a dual damascene process where the SLAM fills a via opening and is etched along with a surrounding dielectric material to form trenches overlying the via opening.Type: GrantFiled: May 3, 2006Date of Patent: August 11, 2009Assignee: Intel CorporationInventors: Michael D. Goodner, Robert P. Meagley, Kevin P. O'Brien
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Patent number: 7560165Abstract: Method and structure for minimizing the downsides associated with microelectronic device processing adjacent porous dielectric materials are disclosed. In particular, chemical protocols are disclosed wherein porous dielectric materials may besealed by attaching coupling agents to the surfaces of pores. The coupling agents may form all or part of caps on reactive groups in the dielectric surface or may crosslink to seal pores in the dielectric.Type: GrantFiled: June 7, 2005Date of Patent: July 14, 2009Assignee: Intel CorporationInventors: Grant Kloster, Robert P. Meagley, Michael D. Goodner, Kevin P. O'brien, Don Bruner
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Publication number: 20090076291Abstract: An adhesion promoter to help reduce semiconductor process effects, such as undesired line edge roughness, insufficient lithographical resolution, and limited depth of focus problems associated with the removal of a photoresist layer. A photoactive adhesion promoter (PAG) is described which helps reduce these and other undesired effects associated with the removal of photoresist in a semiconductor manufacturing process.Type: ApplicationFiled: November 24, 2008Publication date: March 19, 2009Inventor: Robert P. Meagley
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Patent number: 7501230Abstract: An adhesion promoter to help reduce semiconductor process effects, such as undesired line edge roughness, insufficient lithographical resolution, and limited depth of focus problems associated with the removal of a photoresist layer. A photoactive adhesion promoter (PAG) is described which helps reduce these and other undesired effects associated with the removal of photoresist in a semiconductor manufacturing process.Type: GrantFiled: November 4, 2002Date of Patent: March 10, 2009Inventor: Robert P. Meagley
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Patent number: 7452728Abstract: Methods and systems for the concentration and removal of metal ions from aqueous solutions are described, comprising treating the aqueous solutions with photoswitchable ionophores.Type: GrantFiled: May 20, 2004Date of Patent: November 18, 2008Assignee: Intel CorporationInventors: Bob E. Leet, Robert P. Meagley, Michael D. Goodner, Michael L. McSwiney
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Patent number: 7405419Abstract: A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround interconnect materials, such as by lining the walls and base of a trench and via. The unidirectional conductive material may be configured to conduct electricity in a direction corresponding to a projection to or from a contact point and conductive material overlying the unidirectional conductive material, but have no substantial electrical conductivity in other directions. Moreover, the unidirectional conductive material may be electrically conductive in a direction normal to a surface over which it is formed or in directions along or across a plane, but have no substantial electrical conductivity in other directions.Type: GrantFiled: December 28, 2005Date of Patent: July 29, 2008Assignee: Intel CorporationInventors: Reza M. Golzarian, Robert P. Meagley, Seiichi Morimoto, Mansour Moinpour
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Publication number: 20080160446Abstract: Photoresist compositions including amino acid polymers as photoimageable species are disclosed. Methods of using the compositions in photolithography are also disclosed.Type: ApplicationFiled: December 28, 2006Publication date: July 3, 2008Inventor: Robert P. Meagley
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Publication number: 20080145792Abstract: A base-loaded polymer is applied to a semiconductor feature formed after exposing and developing a photoresist layer in order to reduce line edge roughness caused by a residual acid collecting on the edges of the feature during the post-exposure bake of the photoresist. Alternatively, a polymer is applied containing grains that are of suitable size for smoothing the line edge roughness.Type: ApplicationFiled: October 11, 2006Publication date: June 19, 2008Inventors: Manish Chandhok, Robert P. Meagley
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Patent number: 7375030Abstract: Numerous embodiments of a method to assay sacrificial material are disclosed. In one embodiment, a sacrificial material may be analyzed by high performance liquid chromatography. Chemical markers that correlate with material contaminants in the sacrificial material may be identified.Type: GrantFiled: May 25, 2006Date of Patent: May 20, 2008Assignee: Intel CorporationInventors: Hok-Kin Choi, Robert P. Meagley
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Patent number: 7361455Abstract: Anti-reflective materials such as bottom anti-reflective coatings (BARC's) and sacrificial light absorbing materials (SLAM) may be made more effective at preventing coherent light or electron beam reflection from a substrate by including in the anti-reflective material an additive to alter the radiation beam path of the reflected light or electrons. The radiation beam path altering additive may be a reflective material or a refractive material. The inclusion of such a radiation beam bath altering additive may reduce line width roughness and increase critical dimension (CD) control of interconnect lines and vias.Type: GrantFiled: March 31, 2004Date of Patent: April 22, 2008Assignee: Intel CorporationInventors: Shan C. Clark, Ernisse S. Putna, Robert P. Meagley