Abstract: A composite sacrificial material is deposited in a void or opening in a dielectric layer on a semiconductor substrate. The composite sacrificial material includes a polymeric or oligomeric matrix with filler material mixed therein. The filler material may be particulate matter that may be used to modify one or more properties of the composite sacrificial material during semiconductor processing.

Abstract: A system, method, and software to form photoresist resin which has a more uniform distribution of polymers are disclosed. In one embodiment, the method includes introducing a first monomer into a reaction vessel; introducing a second monomer into the reaction vessel; and introducing an initiator into the reaction vessel to cause a polymerization of the first and second monomers, wherein the introducing the first and second monomers into the reaction vessel is performed in a manner that a concentration ratio of the first and second monomers is a function of a predetermined inverse relationship to a reactivity ratio of the first and second monomers. In another embodiment, the method includes introducing an initiator into the reaction vessel to cause a living or pseudo-living polymerization of the first and second monomers.

Abstract: A thermally decomposable sacrificial material is deposited in a void or opening in a dielectric layer on a semiconductor substrate. The thermally decomposable sacrificial material may be removed without damaging or removing the dielectric layer. The thermally decomposable sacrificial material may be a combination of organic and inorganic materials, such as a hydrocarbon-siloxane polymer hybrid.

Abstract: In one embodiment, the present invention includes introducing a conventional precursor and an organic precursor having an organic porogen into a vapor deposition apparatus; and forming a dielectric layer having the organic porogen on a substrate within the vapor deposition apparatus from the precursors. In certain embodiments, at least a portion of the organic porogen may be removed after subsequent processing, such as dual damascene processing.

Abstract: A composite sacrificial material is deposited in a void or opening in a dielectric layer on a semiconductor substrate. The composite sacrificial material includes a polymeric or oligomeric matrix with filler material mixed therein. The filler material may be particulate matter that may be used to modify one or more properties of the composite sacrificial material during semiconductor processing.

Abstract: In one embodiment, the present invention includes introducing a precursor containing hydrocarbon substituents and optionally a second conventional or hydrocarbon-containing precursor into a vapor deposition apparatus; and forming a dielectric layer having the hydrocarbon substituents on a substrate within the vapor deposition apparatus from the precursor(s). In certain embodiments, at least a portion of the hydrocarbon substituents may be later removed from the dielectric layer to reduce density thereof.

Abstract: A semiconductor structure may be covered with a thermally decomposing film. That film may then be covered by a sealing cover. Subsequently, the thermally decomposing material may be decomposed, forming a cavity.

Abstract: A polymer system for semiconductor applications may be formed by blending a filler material and a precursor for a photodefinable polymer. The filler may be chosen so as not to adversely affect the photodefinability of the resulting system and, in some embodiments, may improve the mechanical or chemical properties of the resulting system.

Abstract: The sloped edges of patterned photoresist material are made more vertical by treating the exposed and developed photoresist pattern to an edge correction process. A layer of acid-based material is deposited on the photoresist pattern. The layer is then exposed to acid-neutralizing light to create a top-to-bottom gradient of acidity. The structure is then exposed to heat to cause the acid to diffuse into the edge of the photoresist in amounts roughly proportional to the gradient. A subsequent development process removes the acid-based layer and also reshapes the photoresist edge in proportion to the acid diffusion, leaving a more vertical edge.

Abstract: A cross-linked photoresist may be stripped without using water to reduce substrate corrosion. In one embodiment, a transesterification reaction may use an alcohol instead of water as the co-solvent for an organic base.

Abstract: Exposure systems may use pellicles made of perfluoropoly-ether. These materials may exhibit reduced darkening upon repeated exposures compared to other materials.

Abstract: An adhesion promoter to help reduce semiconductor process effects, such as undesired line edge roughness, insufficient lithographical resolution, and limited depth of focus problems associated with the removal of a photoresist layer. A photoactive adhesion promoter (PAG) is described which helps reduce these and other undesired effects associated with the removal of photoresist in a semiconductor manufacturing process.

Abstract: Photoresists may be formed over a structure that has been modified so as to poison a lower layer of the photoresist. Then, when the photoresist is patterned, it is only patterned down to the poisoned layer. The poisoned layer may be removed subsequently. However, because of the use of the modification process, the critical dimensions of the photoresist may be improved in some embodiments.

Abstract: A thermally decomposable sacrificial material is deposited in a void or opening in a dielectric layer on a semiconductor substrate. The thermally decomposable sacrificial material may be removed without damaging or removing the dielectric layer. The thermally decomposable sacrificial material may be a combination of organic and inorganic materials, such as a hydrocarbon-siloxane polymer hybrid.

Abstract: After etching a pattern into a layer of material with a fluorous etch solution, the resulting fluorous post-etch residue is treated with a chemical solution to render the post-etch residue more responsive to polar cleaning solutions. The fluorous post-etch residue, which is normally resistant to removal by polar cleaning solutions, may change its physical and chemical characteristics after being exposed to the chemical solution for a predetermined time and temperature. The residue may then be more easily dissolved and removed with the polar cleaning solution.

Abstract: A base-loaded polymer is applied to a semiconductor feature formed after exposing and developing a photoresist layer in order to reduce line edge roughness caused by a residual acid collecting on the edges of the feature during the post-exposure bake of the photoresist. Alternatively, a polymer is applied containing grains that are of suitable for smoothing the line edge roughness.

Abstract: Polymer features may be formed on a substrate by applying a polymer to a photoresist pattern which is subsequently removed to generate the desired polymer features.