Abstract: This method enables the use of nanowire or nano-textured forms of Polyaniline and other conductive polymers in energy storage components. The delicate nature of these very high surface area materials are preserved during the continuous electrochemical synthesis, drying, solvent application and physical assembly. The invention also relates to a negative electrode that is comprised of etched, lithiated aluminum that is safer and lighter weight than conventional carbon based lithium-ion negative electrodes. The invention provides for improved methods for making negative and positive electrodes and for energy storage devices containing them. The invention provides sufficient stability in organic solvent and electrolyte solutions, where the prior art processes commonly fail. The invention further provides stability during repetitive charge and discharge. The invention also provides for novel microstructure protecting support membranes to be used in an energy storage device.

Abstract: The present invention relates to a method for lithiation of an intercalation-based anode or a non-reactive plating-capable foil or a reactive alloy capable anode, whereby utilization of said lithiated intercalation-based anode or a plating-capable foil or reactive alloy capable anode in a rechargeable battery or electrochemical cell results in an increased amount of lithium available for cycling, and an improved reversible capacity during charge and discharge.

Abstract: This method enables the use of nanowire or nano-textured forms of Polyaniline and other conductive polymers in energy storage components. The delicate nature of these very high surface area materials are preserved during the continuous electrochemical synthesis, drying, solvent application and physical assembly. The invention also relates to a negative electrode that is comprised of etched, lithiated aluminum that is safer and lighter weight than conventional carbon based lithium-ion negative electrodes. The invention provides for improved methods for making negative and positive electrodes and for energy storage devices containing them. The invention provides sufficient stability in organic solvent and electrolyte solutions, where the prior art processes commonly fail. The invention further provides stability during repetitive charge and discharge. The invention also provides for novel microstructure protecting support membranes to be used in an energy storage device.

Abstract: This method enables the use of nanowire or nano-textured forms of Polyaniline and other conductive polymers in energy storage components. The delicate nature of these very high surface area materials are preserved during the continuous electrochemical synthesis, drying, solvent application and physical assembly. The invention also relates to a negative electrode that is comprised of etched, lithiated aluminum that is safer and lighter weight than conventional carbon based lithium-ion negative electrodes. The invention provides for improved methods for making negative and positive electrodes and for energy storage devices containing them. The invention provides sufficient stability in organic solvent and electrolyte solutions, where the prior art processes commonly fail. The invention further provides stability during repetitive charge and discharge. The invention also provides for novel microstructure protecting support membranes to be used in an energy storage device.

Abstract: A system and method for processing substrates that achieves isothermal and uniform fluid flow processing conditions for a plurality of substrates. In one aspect, the invention is a system and method that utilizes matching the emissivity value of the surfaces of a process chamber that oppose exposed surfaces of the substrates with the emissivity value of the exposed surfaces to achieve isothermal conditions throughout a substrate stack. In another aspect, the invention is system and method of processing substrates in a process chamber that exhibits excellent fluid flow uniformity by eliminating cavities or geometrical irregularities in the process chamber profile due to substrate loading openings. In yet anther aspect, the invention is a system and method of processing substrates wherein the process chamber comprises a liner and a shell, the liner constructed of a highly thermally conductive material, such as carbon, and the shell is constructed of a non-porous material, such as stainless steel.

Abstract: A process for coating of at least one conformal thin film simultaneously onto the surface of a plurality or batch of substrates having nanoscaled features is provided. The process involves exposing a batch of substrates to a supercritical fluid mixture in a controlled environment, and subsequently heating and cooling the substrate, in the presence of the supercritical fluid mixture, beyond a threshold temperature at which film growth can be enabled to initiate conformal thin film deposition on the surface of the substrate and within the nanoscaled features. The supercritical fluid mixture may be generated in a manner so as to maintain a necessary concentration level of the precursor material to permit sufficient thin film growth within the controlled environment. The supercritical fluid mixture may also be introduced into the controlled environment in a manner which minimizes precipitation or loss of solubility of the precursor material in the mixture.

Abstract: A chemical vapor deposition (CVD) reactor comprising: a reactor chamber; a substrate holder located within the reactor chamber; a gas inlet system arranged to provide a gas flow rotating above the substrate holder; and a gas exhaust. The flow characteristics of the precursor gas are controlled to equalize the thin film thickness across the substrate surface by forcing the gas into a smaller volume as it moves across the substrate. With a central exhaust, this is done by reducing the height of the reactor chamber with increasing proximity to the center of the reactor chamber so that the reactor volume per unit distance decreases as the gas moves from the inlet to the exhaust.

Abstract: A method for selective deposition of integrated circuit thin film, the method comprising: providing a substrate having a surface in a deposition chamber; depositing a photosensitive film on the substrate surface; selectively exposing a portion of the film to UVL (ultraviolet light), thereby creating an exposed film portion and an unexposed film portion; providing, in the deposition chamber, a mist of liquid precursor particles having a first polarity; and utilizing the first polarity to migrate the mist particles to one of either the exposed film portion or the unexposed film portion.

Abstract: A Chemical Vapor Deposition (CVD) vaporizer comprising: a liquid supply assembly having an environment supporting a liquid state for a plurality of precursor components of a liquid precursor blend; a venturi operative to atomize said liquid precursor blend; a vaporization chamber, located proximate to said liquid supply assembly and said venturi, having an environment supporting a vapor state for said plurality of precursor components; and a thermal barrier located between said liquid supply assembly and said vaporization chamber enabling preservation of a large temperature disparity between said liquid supply assembly and said proximately located vaporization chamber.

Abstract: Chemical vapor deposition reactor incorporating gas flow vortex formation for uniform chemical vapor deposition upon a stationary wafer substrate. Gas flow including chemical vapors is introduced in tangential fashion to the interior of the heated reactor to provide for suitable uniform boundary layer control within the reactor upon the stationary wafer substrate.

Abstract: Chemical vapor deposition reactor incorporating gas flow vortex formation for uniform chemical vapor deposition upon a stationary wafer substrate. Gas flow including chemical vapors is introduced in tangential fashion to the interior of the heated reactor to provide for suitable uniform boundary layer control within the reactor upon the stationary wafer substrate.

Abstract: Method and apparatus for uniform direct radiant heating in a rapid thermal processing reactor where uniformity of temperature across the width and breadth of a semiconductor wafer is achieved by placement of a dome-shaped thermal insert in close proximity to a semiconductor wafer in process. Thermal energy is absorbed by the thermal insert from the semiconductor wafer at a high rate where the spacing between the thermal insert and semiconductor wafer is at a minimum and at a gradually reduced rate where the spacing between the thermal insert and semiconductor wafer is gradually increased. A guard ring is also incorporated to negate bottom side reflective thermal energy exposure.

Abstract: A method and apparatus for improved metal oxide chemical vapor deposition on a substrate surface where the application boundary layer is reduced and where the uniformity of the application boundary layer is greatly enhanced in a reactor. Primary and secondary sonic or other disturbance sources are introduced to the interior chamber or an oscillating chuck is incorporated to influence the boundary layer thickness and uniformity.

Abstract: A mass flow controller controls the delivery of a precursor to a mist generator. The precursor is misted utilizing a venturi in which a combination of oxygen and nitrogen gas is charged by a corona wire and passes over a precursor-filled throat. The mist is refined using a particle inertial separator, electrically filtered so that it comprises predominantly negative ions, passes into a velocity reduction chamber, and then flows into a deposition chamber through inlet ports in an inlet plate that is both a partition between the chambers and a grounded electrode. The inlet plate is located above and substantially parallel to the plane of the substrate on which the mist is to be deposited. The substrate is positively charged to a voltage of about 5000 volts. There are 440 inlet ports per square inch in an 39 square inch inlet port area of the inlet plate directly above the substrate. The inlet port area is approximately equal to the substrate area.

Abstract: A method and apparatus for improved metal oxide chemical vapor deposition on a substrate surface where the application boundary layer is reduced and where the uniformity of the application boundary layer is greatly enhanced in a reactor. Primary and secondary sonic or other disturbance sources are incorporated for introducing disturbance into the interior chamber of the reactor, or an oscillating or vibrating chuck is incorporated within the interior chamber, to influence the boundary layer thickness and uniformity.

Abstract: A mass flow controller controls the delivery of a precursor to a mist generator. The precursor is misted utilizing a venturi in which a combination of oxygen and nitrogen gas is charged by a corona wire and passes over a precursor-filled throat. The mist is refined using a particle inertial separator, electrically filtered so that it comprises predominately negative ions, passes into a velocity reduction chamber, and then flows into a deposition chamber through inlet ports in an inlet plate that is both a partition between the chambers and a grounded electrode. The inlet plate is located above and substantially parallel to the plane of the substrate on which the mist is to be deposited. The substrate is positively charged to a voltage of about 5000 volts. There are 440 inlet ports per square inch in an 39 square inch inlet port area of the inlet plate directly above the substrate. The inlet port area is approximately equal to the substrate area.

Abstract: Oxides are etched with a halide-containing species and a low molecular weight organic molecule having a high vapor pressure at standard conditions, where etching is performed at preset wafer temperature in an enclosed chamber at a pressure such that all species present in the chamber, including water, are in the gas phase and condensation of species present on the etched surface is controlled. Thus all species involved remain in the gas phase even if trace water vapor appears in the process chamber. Preferably, etching is performed in a cluster dry tool apparatus.

Abstract: A chemical processing system for generating ultra-pure chemicals near the site of use. The system includes in series a supply of chemical or the site of use which may be a tank or drum and may be a point of use for semiconductor manufacturing, a concentrate sensor, a pump, a filter, a reactor vessel, and an optional heat exchanger, all connected by Kel-F tubing. Sources of pure filtered gas connect to the reactor vessel. An ozone generator can likewise connect to the reactor vessel. An optional isolation coil can likewise connect between the gas source and the reactor vessel.

Abstract: High temperature ceramic nut of aluminum oxide for use in coupling a flared tube to a flare fitting.

Abstract: Oxides are etched with a halide-containing species and a low molecular weight organic molecule having a high vapor pressure at standard conditions, where etching is performed at preset wafer temperature in an enclosed chamber at a pressure such that all species present in the chamber, including water, are in the gas phase and condensation of species present on the etched surface is controlled. Thus all species involved remain in the gas phase even if trace water vapor appears in the process chamber. Preferably, etching is performed in a cluster dry tool apparatus.