Abstract: A multi-purpose personal watercraft for deployment in different configurations as desired by a user. The multi-purpose personal watercraft comprises a base frame defining a watercraft base which includes selectively foldable side extensions, a removable aft floor board, and a bow portion, as well as two opposing side floats with which the base frame is selectively integrated. When in place, the opposing side floats defines form the multi-purpose personal watercraft's U shaped hull and enable the selective attachment of a rudder assembly. With respect to propulsion, base frame is configured to enable the selective deployment of pedal propellers, a user's legs, or a trolling motor. A dual steering system enables the control of up to two discrete steering mechanisms from a single position on the watercraft.

Abstract: A method of forming an optical fibre assembly, comprises providing a planar substrate made of a first material; positioning an optical fibre with an outer layer of a first glass material on a surface of the substrate to form a pre-assembly; depositing a further glass material such as silica soot onto the pre-assembly, over at least a part of the optical fibre and adjacent parts of the substrate surface; and heating the pre-assembly to consolidate the further glass material into an amorphous volume in contact with at least parts of the surface of the substrate and the outer layer of the optical fibre, thereby bonding the optical fibre to the substrate to create the optical fibre assembly.

Abstract: A multi-purpose personal watercraft for deployment in different configurations as desired by a user. The multi-purpose personal watercraft comprises a base frame defining a watercraft base which includes selectively foldable side extensions, a removable aft floor board, and a bow portion, as well as two opposing side floats with which the base frame is selectively integrated. When in place, the opposing side floats defines form the multi-purpose personal watercraft's U shaped hull and enable the selective attachment of a rudder assembly. With respect to propulsion, base frame is configured to enable the selective deployment of pedal propellers, a user's legs, or a trolling motor. A dual steering system enables the control of up to two discrete steering mechanisms from a single position on the watercraft.

Abstract: A method of growing III-N material on a silicon substrate includes the steps of epitaxially growing a single crystal rare earth oxide on a silicon substrate, epitaxially growing a single crystal rare earth nitride on the single crystal rare earth oxide, and epitaxially growing a layer of single crystal III-N material on the single crystal rare earth nitride.

Abstract: Rare earth semiconductor and ferromagnetic material epitaxially grown on a silicon substrate includes a buffer of single crystal epitaxial rare earth/aluminum nitride positioned on a single crystal silicon substrate and a single crystal epitaxial rare earth oxide positioned on the single crystal epitaxial aluminum nitride. A layer of single crystal epitaxial semiconductor and ferromagnetic rare earth nitride is positioned on the buffer. A layer of III-V semiconductive material may be optionally positioned on the rare earth nitride layer.

Abstract: Rare earth oxy-nitride buffered III-N on silicon includes a silicon substrate with a rare earth oxide (REO) structure, including several REO layers, is deposited on the silicon substrate. A layer of single crystal rare earth oxy-nitride is deposited on the REO structure. The REO structure is stress engineered to approximately crystal lattice match the layer of rare earth oxy-nitride so as to provide a predetermined amount of stress in the layer of rare earth oxy-nitride. A III oxy-nitride structure, including several layers of single crystal rare earth oxy-nitride, is deposited on the layer of rare earth oxy-nitride. A layer of single crystal III-N nitride is deposited on the III oxy-nitride structure. The III oxy-nitride structure is chemically engineered to approximately crystal lattice match the layer of III-N nitride and to transfer the predetermined amount of stress in the layer of rare earth oxy-nitride to the layer of III-N nitride.

Abstract: Rare earth semiconductor and ferromagnetic material epitaxially grown on a silicon substrate includes a buffer of single crystal epitaxial rare earth/aluminum nitride positioned on a single crystal silicon substrate and a single crystal epitaxial rare earth oxide positioned on the single crystal epitaxial aluminum nitride. A layer of single crystal epitaxial semiconductor and ferromagnetic rare earth nitride is positioned on the buffer. A layer of III-V semiconductive material may be optionally positioned on the rare earth nitride layer.

Abstract: Provided is a glove comprising an outer shell comprising a back portion; and a pocket sewn or glued onto the back portion with thread or attached with glue where a mirror that can be inserted into the pocket. When washing is required the mirror can be removed from the pocket and the glove washed.

Abstract: A method of growing III-N material on a silicon substrate includes the steps of epitaxially growing a single crystal rare earth oxide on a silicon substrate, epitaxially growing a single crystal rare earth nitride on the single crystal rare earth oxide, and epitaxially growing a layer of single crystal III-N material on the single crystal rare earth nitride.

Abstract: A rare earth oxide gate dielectric on III-N material grown on a silicon substrate includes a single crystal stress compensating template positioned on a silicon substrate. The stress compensating template is substantially crystal lattice matched to the surface of the silicon substrate. A GaN structure is positioned on the surface of the stress compensating template and substantially crystal lattice matched thereto. An active layer of single crystal III-N material is grown on the GaN structure and substantially crystal lattice matched thereto. A single crystal rare earth oxide dielectric layer is grown on the active layer of III-N material.

Abstract: A variable grip blind rivet has a rivet body with a first shank adapted to be inserted into a hole in a workpiece and having an axial bore, and a flange at a first end of the first shank for abutting the workpiece when the first shank is inserted into the hole in the workpiece. A mandrel has a head, for engaging a second end of the first shank, and a second shank adapted to extend through the axial bore. The head has an abutment portion for abutting the first end of the first shank. At least one protrusion adjacent the abutment portion defines a recess for receiving the first end of the first shank during setting of the rivet.

Abstract: Described herein are various embodiments of systems, methods, and apparatus that allow a user to share data, such as one or more files from within an application with one or more other (not necessarily co-located) computing devices using a gesture-based sharing function. In a particular example, systems, methods, and apparatus described herein may be used to share graphical representations of chemical structures within a chemical structure rendering application between two or more user devices. By offering a user a quick and visually intuitive option for sharing a file with other user(s) without exiting a current application, the systems, methods, and apparatus described herein provide efficient and engaging tools for sharing work product in real time between two or more users.

Abstract: A rare earth oxide gate dielectric on III-N material grown on a silicon substrate includes a single crystal stress compensating template positioned on a silicon substrate. The stress compensating template is substantially crystal lattice matched to the surface of the silicon substrate. A GaN structure is positioned on the surface of the stress compensating template and substantially crystal lattice matched thereto. An active layer of single crystal III-N material is grown on the GaN structure and substantially crystal lattice matched thereto. A single crystal rare earth oxide dielectric layer is grown on the active layer of III-N material.

Abstract: Embodiments described herein allow a user to electronically draw and edit a biological sequence and its resulting structure. Embodiments may include identifying, based at least in part upon an amended in-progress biological sequence, one or more biological sequence scaffold candidates from a set of biological sequence scaffold candidates, where each biological sequence scaffold candidate of the one or more biological sequence scaffold candidates is configured to, upon one or both of (i) appending to the amended portion of the in-progress biological sequence and (ii) replacing or partially replacing the amended portion of the in-progress biological sequence, provide a resulting biological sequence or biological sequence fragment that has been previously rendered. The one or more biological sequence scaffold candidates may be provided for presentation on a graphical display as option(s) for selection by a user in creating the representation of the biological sequence.

Abstract: The content of an instructor-student interaction set in an automated teaching system is represented in a graph-based format. In a graph-based representation, not only can variations branch away from each other at a node (branching point), as in the tree-based representation, but they can also merge back together. Not only does this make the -structure more compact, but it increases the number of variations that can be represented in the content while simultaneously eliminating the need to individually author each variation.

Abstract: A method and system for teaching a user a target language includes developing and constructing variable potential paths of nodes representing an exchange between two participants in a dialogue, prompting and selecting a path of nodes through a conversation graph of the target language, the path of nodes defining a dialogue; and determining whether the user is ready to perform the dialogue that has been constructed and defined by the path of nodes, the determination being based on a user model which represents the user's current ability in and current knowledge of, the target language. If the user is ready to perform the dialogue, the path of nodes is executed to allow the user to perform the dialogue defined thereby; and if the user is not ready to perform the dialogue, training the user on one or more nodes of the path of nodes.

Abstract: A method of fabricating a rare earth silicide gate electrode on III-N material grown on a silicon substrate includes growing a single crystal stress compensating template on a silicon substrate. The template is substantially crystal lattice matched to the surface of the silicon substrate. A single crystal GaN structure is grown on the surface of the template and substantially crystal lattice matched to the template. An active layer of single crystal III-N material is grown on the GaN structure and substantially crystal lattice matched to the GaN structure. A single crystal monoclinic rare earth oxide dielectric layer is grown on the active layer of III-N material and a single crystal rare earth silicide gate electrode is grown on the dielectric layer, the silicide. Relative portions of the gadolinium metal and the silicon are adjusted during deposition so they react to form rare earth silicide during deposition.

Abstract: A sample of nonlinear optical material for use in a nonlinear optical device contains a grating comprising alternating regions of inverted and non-inverted nonlinear coefficient of the material, with the regions separated by boundaries positioned such that the grating can provide quasi-phase matching of a selected nonlinear optical interaction, and compensate for phase mismatch arising from the Gouy phase shift of one or more focused optical beams involved in the interaction. The boundary positions can be calculated for second harmonic generation or optical parametric generation and oscillation.

Abstract: A method of forming a layer of amorphous silicon oxide positioned between a layer of rare earth oxide and a silicon substrate. The method includes providing a crystalline silicon substrate and depositing a layer of rare earth metal on the silicon substrate in an oxygen deficient ambient at a temperature above approximately 500° C. The rare earth metal forms a layer of rare earth silicide on the substrate. A first layer of rare earth oxide is deposited on the layer of rare earth silicide with a structure and lattice constant substantially similar to the substrate. The structure is annealed in an oxygen ambience to transform the layer of rare earth silicide to a layer of amorphous silicon and an intermediate layer of rare earth oxide between the substrate and the first layer of rare earth oxide.

Abstract: A variable grip blind rivet has a rivet body with a first shank adapted to be inserted into a hole in a workpiece and having an axial bore, and a flange at a first end of the first shank for abutting the workpiece when the first shank is inserted into the hole in the workpiece. A mandrel has a head, for engaging a second end of the first shank, and a second shank adapted to extend through the axial bore. The head has an abutment portion for abutting the first end of the first shank. At least one protrusion adjacent the abutment portion defines a recess for receiving the first end of the first shank during setting of the rivet.