Abstract: The present invention relates to semiconductor devices comprising rare earth based optical gain medium layers suitable for electronic and optoelectronic applications.

Abstract: An optical waveguide device (10) comprises a planar substrate with a lower cladding layer (14), a core layer (16) and an upper cladding layer (18), a groove (20) in the substrate that extends at least into the core layer (16), and a waveguiding channel (22) in the core layer (16), wherein at least a part of the waveguiding channel (22), which may contain a Bragg grating, is sufficiently proximate to the groove (20) in the plane of the substrate for an evanescent field of light propagating in the waveguiding channel (22) to extend laterally into the groove (20). Material contained in the groove modifies the properties of the waveguiding channel, so that a sample of material can be analysed or an active material can be used to modulate the propagating light. The groove (20) can be made before the waveguide (22). The groove (20) can be made by cutting into the substrate with a saw and the waveguide (22) can be made by direct writing in the core layer (16) with an ultraviolet beam.

Abstract: A method of fabricating a layer of single crystal semiconductor material on a silicon substrate including providing a crystalline silicon substrate and epitaxially depositing a nano structured interface layer on the substrate. The nano structured interface layer has a thickness up to a critical thickness. The method further includes epitaxially depositing a layer of single crystal semiconductor material in overlying relationship to the nano structured interface layer. Preferably, the method includes the nano structured interface layer being a layer of coherently strained nano dots of selected material. The critical thickness of the nano dots includes a thickness up to a thickness at which the nano dots become incoherent.

Abstract: A method of growing single crystal III-N material on a semiconductor substrate includes providing a substrate including one of crystalline silicon or germanium and a layer of rare earth oxide. A layer of single crystal III-N material is epitaxially grown on the substrate using a process that elevates the temperature of the layer of rare earth oxide into a range of approximately 750° C. to approximately 1250° C. in the presence of an N or a III containing species, whereby a portion of the layer of rare earth oxide is transformed to a new alloy.

Abstract: A variable grip blind rivet includes a tubular rivet body and a mandrel. The rivet body has a first shank, insertable into a hole in a workpiece, and a flange at a first end of the first shank for abutting the workpiece when so inserted. The mandrel has a head, for engaging a second end of the first shank, and a second shank adapted to extend through the axial bore of the rivet body. The head has an abutment portion for abutting the first end of the first shank, and the second shank has a first reduced diameter portion adapted to break when a predetermined tensile is loaded applied. At least one protrusion adjacent the abutment portion defines a recess for receiving the first end of the first shank during setting of the rivet.

Abstract: A virtual substrate structure with a lattice matched crystalline reflector for a light emitting device including a single crystal rare earth oxide layer deposited on a silicon substrate and substantially crystal lattice matched to the silicon substrate. A reflective layer of single crystal electrically conductive material is deposited on the layer of single crystal rare earth oxide and a layer of single crystal semiconductor material is positioned in overlying relationship to the reflective layer and substantially crystal lattice matched to the reflective layer. A single crystal rare earth oxide layer is optionally deposited between the reflective layer and the layer of semiconductor material.

Abstract: A III-N on silicon substrate with enhanced breakdown voltage including a rare earth oxide structure deposited on the silicon substrate and a layer of single crystal III-N semiconductor material deposited on the rare earth oxide structure. The rare earth oxide has a dielectric constant greater (approximately twice) than the III-N semiconductor material. The rare earth oxide structure is selected to cooperate with the layer of single crystal III-N semiconductor material to reduce the thickness of the layer of single crystal III-N semiconductor material required for a selected breakdown voltage to a value less than a thickness of the layer of single crystal III-N semiconductor material for the selected breakdown voltage without the cooperating single crystal rare earth oxide.

Abstract: The present invention provides an imaging probe which comprises a lipophilic cation, a hydrophobic moiety and a PET nucleus. The present invention also provides a precursor molecule for the production of such an imaging probe and methods for using the probe for analysing mitochondrial membrane potential in a subject.

Abstract: A method of forming a layer of amorphous silicon oxide positioned between a layer of rare earth oxide and a silicon substrate. The method includes providing a crystalline silicon substrate and depositing a layer of rare earth metal on the silicon substrate in an oxygen deficient ambient at a temperature above approximately 500° C. The rare earth metal forms a layer of rare earth silicide on the substrate. A first layer of rare earth oxide is deposited on the layer of rare earth silicide with a structure and lattice constant substantially similar to the substrate. The structure is annealed in an oxygen ambience to transform the layer of rare earth silicide to a layer of amorphous silicon and an intermediate layer of rare earth oxide between the substrate and the first layer of rare earth oxide.

Abstract: Rare earth oxy-nitride buffered III-N on silicon includes a silicon substrate with a rare earth oxide (REO) structure, including several REO layers, is deposited on the silicon substrate. A layer of single crystal rare earth oxy-nitride is deposited on the REO structure. The REO structure is stress engineered to approximately crystal lattice match the layer of rare earth oxy-nitride so as to provide a predetermined amount of stress in the layer of rare earth oxy-nitride. A III oxy-nitride structure, including several layers of single crystal rare earth oxy-nitride, is deposited on the layer of rare earth oxy-nitride. A layer of single crystal III-N nitride is deposited on the III oxy-nitride structure. The III oxy-nitride structure is chemically engineered to approximately crystal lattice match the layer of III-N nitride and to transfer the predetermined amount of stress in the layer of rare earth oxy-nitride to the layer of III-N nitride.

Abstract: A system and method for language instruction for implementation on a language instruction system that includes a computer system, is disclosed, wherein the method may include identifying a speech segment in a target language, that is susceptible to mispronunciation by language learners; selecting an auditory attribute for use in playing the identified speech segment by the language instruction system; altering a level of the auditory attribute to differ from a naturally occurring level of the attribute; and playing a first text sequence by the language instruction system, including at least one instance of the identified speech segment, using the altered level of the auditory attribute.

Abstract: A method of teaching a language to a student by an instructor is disclosed, wherein the method may include the steps of the instructor uttering a first prompting phrase to the student; receiving a first response from the student in response to the first prompting phrase; modifying at least one characteristic of the first prompting phrase to generate a second prompting phrase; and the instructor uttering the second prompting phrase to the student, wherein at least one of the above steps is performed using a computer.

Abstract: A method of producing a planar substrate having waveguide channels, which method comprises: (i) providing a tube (6) of a substrate material; (ii) depositing silica layers (110) on the inside of the tube (6), the silica layers (110) being doped with a photosensitive material; (iii) drawing the tube (6) so that the cross-sectional size of the tube (109) is reduced; (iv) before or after the reducing of the cross-sectional size of the tube (6), causing the tube (6) to collapse into a flat shape by applying a low pressure to the tube, whereby the deposited silica layers together form a photosensitive silica layer (111); (v) cutting to required lengths the tube (6) which has been collapsed and reduced in cross-sectional size; and (vi) using laser writing to define waveguide channels in the cut lengths of the tube (6) and thereby to produce the planar substrate having the waveguide channels.

Abstract: Infrared imaging at wavelengths longer than the silicon bandgap energy (>1100 nm) typically require expensive focal plane arrays fabricated from compound semiconductors (InSb or HgCdTe) or use of slower silicon microbolometer technology. Furthermore, these technologies are available in relatively small array sizes, whereas silicon focal plane arrays are easily available with 10 megapixels or more array size. A new technique is disclosed to up convert infrared light to wavelengths detectable by silicon focal plane arrays, or other detector technologies, thereby enabling a low-cost, high pixel count infrared imaging system.

Abstract: The invention relates to a semiconductor based structure for a device for converting radiation to electrical energy comprising various combinations of rare-earths and Group IV, III-V, and II-VI semiconductors and alloys thereof enabling enhanced performance including high radiation conversion efficiency.

Abstract: The invention relates to a semiconductor based structure for a device for converting radiation to electrical energy comprising various combinations of rare-earths and Group IV, III-V, and II-VI semiconductors and alloys thereof enabling enhanced performance including high radiation conversion efficiency.

Abstract: The invention relates to photovoltaic device structures of more than one layer comprising rare earth compounds and Group IV materials enabling spectral harvesting outside the conventional absorption limits for silicon.

Abstract: An apparatus for aligning a spring and axle may include an adjusting bar member for connecting to the spring, a spring pad member for connecting to the axle and a biasing member for biasing the adjusting bar member in a first and second direction. The biasing member may include a threaded bolt, and the biasing member may include a bracket. The biasing member may include a reduced diameter member, and the bracket may include a first arm and a second arm. The adjusting bar member may be substantially L-shaped, and the adjusting bar member may include a first guiding member and a second guiding member. The adjusting bar member may include a slot between the first and second guiding members, and the spring pad member may include a concave curved surface to cooperate with the axle housing.

Abstract: A process for poling a ferroelectric material doped with a metal, which process comprises: (i) defining an electrode pattern on a ?z face of a crystal of the ferroelectric material doped with the metal; (ii) providing an electrode material; (iii) poling at a temperature of not more than 45° C.; and (iv) poling by a two-stage voltage-controlled application of electric field based on a first poling stage of domain nucleation and a second poling stage of domain spreading.

Abstract: A method of inducing a periodic variation of nonlinearity value in a sample of ferroelectric material comprises arranging a pair of electrodes on opposite faces of the sample, one electrode defining a desired pattern of nonlinearity variation, applying a pre-bias voltage across the sample for a predetermined time using the electrodes, the pre-bias voltage being less than the coercive field of the ferroelectric material; and after the predetermined time, applying a current-controlled poling voltage across the sample using the electrodes, to produce domain inversion in the sample according to the desired pattern of nonlinearity variation. The pre-bias voltage may be 75% of the coercive field or more, and applied for a pre-determined time between 1 and 100 seconds.