Abstract: Methods and apparatus for removing materials from microfeature workpieces. One embodiment of a subpad in accordance with the invention comprises a matrix having a first surface configured to support a polishing medium and a second surface opposite the first surface. The subpad in this embodiment further includes a hydro-control agent in the matrix. The hydro-control agent has a hydrophobicity that inhibits liquid from absorbing into the subpad. The hydro-control agent, for example, can be coupling agents that are generally hydrophobic, surfactants that are hydrophobic, or other agents that are compatible with the matrix and at least generally hydrophobic.

Abstract: Methods and apparatus for removing materials from microfeature workpieces. One embodiment of a subpad in accordance with the invention comprises a matrix having a first surface configured to support a polishing medium and a second surface opposite the first surface. The subpad in this embodiment further includes a hydro-control agent in the matrix. The hydro-control agent has a hydrophobicity that inhibits liquid from absorbing into the subpad. The hydro-control agent, for example, can be coupling agents that are generally hydrophobic, surfactants that are hydrophobic, or other agents that are compatible with the matrix and at least generally hydrophobic.

Abstract: Methods and apparatus for removing materials from microfeature workpieces. One embodiment of a subpad in accordance with the invention comprises a matrix having a first surface configured to support a polishing medium and a second surface opposite the first surface. The subpad in this embodiment further includes a hydro-control agent in the matrix. The hydro-control agent has a hydrophobicity that inhibits liquid from absorbing into the subpad. The hydro-control agent, for example, can be coupling agents that are generally hydrophobic, surfactants that are hydrophobic, or other agents that are compatible with the matrix and at least generally hydrophobic.

Abstract: Devices, systems and methods for monitoring characteristics of semiconductor substrates and workpieces during planarization and for endpointing planarization processes are provided. The invention utilizes a fiber optic contact sensor incorporated into a planarizing pad or pad-subpad assembly for process monitoring of mechanical energy (e.g., mechanical vibration) and acoustical energy (e.g., ultrasonic vibration) that allows an operator to determine status and/or an endpoint of a planarizing or polishing process. In another embodiment, the invention utilizes a fiber optic contact sensor incorporated into a table support for a planarizing pad.

Abstract: A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.

Abstract: Methods and apparatus for removing materials from microfeature workpieces. One embodiment of a subpad in accordance with the invention comprises a matrix having a first surface configured to support a polishing medium and a second surface opposite the first surface. The subpad in this embodiment further includes a hydro-control agent in the matrix. The hydro-control agent has a hydrophobicity that inhibits liquid from absorbing into the subpad. The hydro-control agent, for example, can be coupling agents that are generally hydrophobic, surfactants that are hydrophobic, or other agents that are compatible with the matrix and at least generally hydrophobic.

Abstract: In a method for controlling byproduct build-up on a polishing pad, a chemistry is introduced onto the top surface of the polishing pad in the presence of a source of kinetic energy. When the source of kinetic energy is a pressurized gas, the chemistry is sprayed onto the top surface of the polishing pad. When the source of kinetic energy is a brush that applies a force against the top surface of the polishing pad, the brush is used to brush the top surface of the polishing pad while applying the chemistry onto the top surface of the polishing pad through the brush. A CMP system for implementing this method includes one or both of a mixing manifold and a brush.

Abstract: A method for material removal and planarization of a substrate includes formation of a weak passivating film on overburden to be removed in the presence of an electrolyte bath and an applied electric potential. An engineered polishing substrate is brought into compliance with the weak passivating film, and using low pressure to minimize shear stress realized at the surface of the substrate, material removal is controlled by mechanical contact between the polishing substrate and the weak passivating film. The weak passivating film is periodically reformed, and mechanical contact continued until desired material removal and substrate planarization is achieved.

Abstract: A chemical mechanical planarization (CMP) apparatus includes a bath of an aqueous solution. A first holder, which is configured to support a wafer, is disposed within the bath. A first spindle is configured to rotate the first holder. A second holder, which is rotated by a second spindle, is disposed above the first holder. The second holder supports a planarization media, which is disposed within the bath. The planarization media is oriented to face the surface of the first holder on which the wafer is to be supported. The planarization media can be a pad containing polyurethane or a substrate having an overlying abrasive film. The CMP apparatus also can include a system for recirculating and reconditioning the aqueous solution. A method for performing a CMP process also is described.

Abstract: One polishing media for chemical mechanical planarization includes an underlayer and a plurality of pressure sensors provided on the underlayer. At least some of the pressure sensors have a pad asperity provided thereon. The pressure sensors may be micro electromechanical systems (MEMS) pressure transducers or MEMS thermal actuators that monitor at least one of localized strain and temperature variation. Another polishing media includes a plurality of chemical sensors. Yet another polishing media includes pressure sensors, chemical sensors, and piezoelectric elements. Based upon the sensory outputs received from adjacent sensors, the piezoelectric elements provide active control to the process input by, for example, inducing localized vibration to modify the spatial removal behavior, inducing localized electric fields, or inducing localized heating/cooling elements.

Abstract: A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.

Abstract: A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.

Abstract: A chemical mechanical polishing slurry comprising a film forming agent, an oxidizer, a complexing agent and an abrasive, and a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.

Abstract: A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.

Abstract: A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.

Abstract: A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.

Abstract: The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.

Abstract: A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.

Abstract: A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.

Abstract: A chemical mechanical polishing slurry comprising a film forming agent, an oxidizer, a complexing agent and an abrasive, and a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.