Abstract: A chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from a substrate. The slurry does not include a separate film-forming agent.

Abstract: The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.

Abstract: A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.

Abstract: The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.

Abstract: A chemical mechanical polishing slurry comprising a film forming agent, urea hydrogen peroxide, a complexing agent, an abrasive, and an optional surfactant, as well as a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.

Abstract: The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.

Abstract: A chemical mechanical polishing slurry comprising a film forming agent, an oxidizer, a complexing agent and an abrasive, and a method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, and titanium nitride containing layers from a substrate.

Abstract: A polishing slurry for chemically mechanically polishing metal layers and films during the various stages of multilevel interconnect fabrication associated with integrated circuit manufacturing. The slurry includes an aqueous medium, an abrasive, an oxidizing agent, and an organic acid. The polishing slurry has been found to significantly lower or inhibit the silicon dioxide polishing rate, thus yielding enhanced selectivity. In addition, the polishing slurry is useful in providing effective polishing to metal layers at desired polishing rates while minimizing surface imperfections and defects.Also disclosed is a method for producing coplanar metal/insulator films on a substrate utilizing the slurry of the present invention and chemical mechanical polishing technique relating thereto.

Abstract: Disclosed are planar waveguides comprising substantially polarization-independent Bragg gratings. A preferred embodiment of the invention comprises a Si body with a silica lower cladding layer thereon, and a phosphorus P-doped silica core on the lower cladding. Appropriate periodic recessed features are etched into the core, and phophorus P- and B-doped silica upper cladding is deposited over the core. The dopant concentrations are adjusted such that the refractive index difference between core and upper cladding is small (0.35-1.45.times.10.sup.-2), and such that the flow temperature of the upper cladding material is lower than that of the core material. In another preferred embodiment a thin layer of Si.sub.3 N.sub.x (x.about.4) is conformally deposited over the core after the grating etch, and the upper cladding material is deposited onto the Si.sub.3 N.sub.x layer. Bragg devices according to the invention are advantageously used in Integrated Optical Circuits (IOCs), e.g.

Abstract: Disclosed is apparatus comprising an optically pumped optical gain device that comprises a rare earth (RE)-doped planar waveguide with non-uniform dopant distribution in the core of the waveguide. The RE ions are advantageously distributed such that the ions are concentrated in a core region in which the mode intensity of both signal radiation and pump radiation is relatively high. In preferred embodiments of a single mode planar waveguide according to the invention the RE ions are substantially concentrated in the central core region. A method of making the disclosed apparatus is also disclosed. The method involves implantation of RE ions into the core region.

Abstract: An optical device is disclosed which provides wavelength multiplexing/demultiplexing utilizing a plurality of focusing Bragg reflectors. Each Bragg reflector includes a plurality of confocal (i.e., common foci) elliptical grating lines, with the exit/entrance ports of the input/output waveguides located at the foci of the ellipse. By virtue of the elliptical design, the signal propagating outward from the exit port of the input waveguide will be reflected by the appropriate Bragg reflector and focused into the entrance port of the appropriate output waveguide. When each Bragg reflector exhibits a different ellipticity, but shares one common focal point, optical multiplexing/demultiplexing may be achieved. Optical filtering may be achieved when all Bragg reflectors are designed to have common foci.