Abstract: Methods and apparatuses for forming an oxide film. The method includes depositing an oxide film on a substrate using a process gas mixture that comprises a silicon source gas, an oxygen gas, and a hydrogen gas, and a process temperature between 800° C. and 1300° C. During the deposition of the oxide film, the process gas mixture comprises less than 6% oxygen, silicon gas, and predominantly hydrogen.

Abstract: A single intranet, internet, or World Wide Web-accessible interface is provided for, initiation of, interactive adjustments to, and access to the outputs of an integrated workflow of a plurality of analytical computer applications for characterization and analysis of traits and optimal management of the extraction of oil, gas, and water from a subsurface reservoir. By combining disparate analytical application tools in a seamless and remotely accessible, package, incompatibility problems caused by the disparate nature of petroleum analysis methods is reduced. The assumptions, analytic processes, and input data used for one analysis may be readily retrieved and re-evaluated for that reservoir or for future evaluations of the same or other reservoirs. Thus a flexible database of analysis tools and data may be implemented for access, input, and output of workflow and analytical data in the field, in conjunction with standard main computer servers, software and plug-ins, and portable remote computers.

Abstract: Methods and apparatuses for forming an oxide film. The method includes depositing an oxide film on a substrate using a process gas mixture that comprises a silicon source gas, an oxygen gas, and a hydrogen gas, and a process temperature between 800° C. and 1300° C. During the deposition of the oxide film, the process gas mixture comprises less than 6% oxygen, silicon gas, and predominantly hydrogen.

Abstract: An apparatus that includes a susceptor having a number of through holes, a number of lift pins positioned within the through holes, each lift pin having a lift pin head able to translate a wafer by contacting the wafer at an outer diameter edge, the lift pins capable of extending to lift the wafer off the susceptor; and the lift pins capable of retracting to place the wafer onto the susceptor, and upon placing the wafer onto the susceptor, each of the lift pin heads are capable of contacting a floor of the susceptor for restricting flow of a gas through the through holes.

Abstract: A system for supplying processing fluid to a substrate processing chamber. The system consists of a number of fluid storages each which stores a separate processing fluid; at least two fluid conduits along which processing fluid flows from the fluid storages to the processing apparatus; and a fluid inlet which connects the fluid conduits to the processing chamber. The inlet has a separate fluid passage, corresponding to each of the fluid conduits, formed along it. Each fluid passage opens at or near an inner surface of a wall of the chamber into a mixing zone, so that fluid moving along one fluid passage is prevented from mixing with fluid moving along any other passage until reaching the mixing zone. Typically at least two of the fluid passages are vertically displaced from one another to, at least partially, define upper and lower fluid flow paths.

Abstract: A system for supplying processing fluid to a substrate processing apparatus having walls, the inner surfaces of which define a processing chamber in which a substrate supporting susceptor is located. The system consists of a number of fluid storages, each which stores a separate processing fluid, at least two fluid conduits along which processing fluid flows from the fluid storages to the processing apparatus and a fluid inlet which connects the fluid conduits to the processing chamber. The inlet has a separate fluid passage, corresponding to each of the fluid conduits, formed along it. Each fluid passage opens at or near an inner surface of a wall to define a fluid mixing zone, so that fluid moving along one fluid passage is prevented from mixing with fluid moving along any other passage until reaching the mixing zone.

Abstract: A lamp array for a thermal processing chamber. The lamp array includes a plurality of lamps arranged in a generally circular array. The plurality of lamps can be arranged in one or more concentric rings to form a generally circular array. Additional lamp arrays can be provided adjacent the circumference of the circular array or outermost concentric ring to provide a generally rectangular heating pattern. At least one row of lamps can be provided tangentially to the circular portion of the lamp array to provide preheating or postheating of process gases in the flow direction of a rectangular processing chamber.

Abstract: An apparatus that includes a reflector having a mirrored surface facing down, a glass structure located beneath the reflector, a susceptor within the glass structure having a surface facing up that is capable of holding a part to be processed, and one or more radiant heat sources directed at and located beneath the glass structure.

Abstract: A thermal reactor having a wafer chamber for containing at least one semiconductor wafer during processing. The thermal reactor contains a quartz window having an inward bow defining a concave outside surface.

Abstract: A cover member for a semiconductor processing thermal reactor. The cover member has a central quartz window portion and an outer flange portion. The central window portion has either an inward bow defining a concave outside surface, or an outward bow defining a convex outside surface. The centerline of the central window portion has a radius of curvature which when extended through the flange portion divides the flange portion into an upper flange section and a lower flange section. The upper and lower flange portions having substantially equal masses.

Abstract: A thermal reactor having a wafer chamber for containing at least one semiconductor wafer during processing. The thermal reactor contains a quartz window having an inward bow defining a concave outside surface.

Abstract: A semiconductor substrate processing chamber provides a bi-directional process gas flow for deposition or etching processes. The bi-directional gas flow provides uniformity of deposition layer thickness or uniformity of etching without the need to rotate the substrate. Junctions are provided at opposite ends of a processing chamber. Inlet and outlet ports are provided on each junction. Inlet and outlet ports on opposite junctions cooperate to provide a gas flow in a first direction for half of the process cycle, and in a second direction for the other half of the process cycle.

Abstract: A cover member for a semiconductor processing thermal reactor. The cover member has a central quartz window portion and an outer flange portion. The central window portion has either an inward bow defining a concave outside surface, or an outward bow defining a convex outside surface. The centerline of the central window portion has a radius of curvature which when extended through the flange portion divides the flange portion into an upper flange section and a lower flange section. The upper and lower flange portions having substantially equal masses.

Abstract: A system for supplying processing fluid to a substrate processing apparatus having walls, the inner surfaces of which define a processing chamber in which a substrate supporting susceptor is located. The system consists of a number of fluid storages, each which stores a separate processing fluid, at least two fluid conduits along which processing fluid flows from the fluid storages to the processing apparatus and a fluid inlet which connects the fluid conduits to the processing chamber. The inlet has a separate fluid passage, corresponding to each of the fluid conduits, formed along it. Each fluid passage opens at or near an inner surface of a wall to together define a fluid mixing zone, so that fluid moving along one fluid passage is prevented from mixing with fluid moving along any other passage until reaching the mixing zone.

Abstract: An apparatus for and method of supporting a substrate such as a semiconductor wafer. Silicon carbide sleeves cover substrate support members such as upwardly extending arms of a substrate carrier which is part of a substrate support assembly. The substrate carrier including the upwardly extending arms holds the substrate spaced apart from a platform such as a susceptor during loading and unloading of a processing chamber. The platform defines apertures through which the arms extend. The arms are vertically movable through the apertures with respect to the platform and engage the substrate at the substrate's edge or alternatively, inwardly from the edge.

Abstract: A wafer support device is provided. The wafer support device includes a susceptor having a surface configured to support a bottom surface of a wafer. The susceptor has a plurality of guiding recesses. The wafer support device also includes a pin lift that has a plurality of pins extending therefrom. The plurality of pins is configured to be passed via the plurality of guiding recesses of the susceptor to engage the bottom surface of the wafer. The susceptor is configured to be moved relative to the plurality of pins in a direction substantially orthogonal to the surface of the susceptor.

Abstract: An apparatus for depositing a material on a wafer includes a susceptor plate mounted in a deposition chamber. The chamber has a gas inlet and a gas exhaust. Means are provided for heating the susceptor plate. The susceptor plate has a plurality of support posts projecting from its top surface. The support posts are arranged to support a wafer thereon with the back surface of the wafer being spaced from the surface of the susceptor plate. The support posts are of a length so that the wafer is spaced from the susceptor plate a distance sufficient to allow deposition gas to flow and/or diffuse between the wafer and the susceptor plate, but still allow heat transfer from the susceptor plate to the wafer mainly by conduction. The susceptor plate is also provided with means, such as retaining pins or a recess, to prevent lateral movement of a wafer seated on the support posts.

Abstract: A method and apparatus for processing opposing surfaces of a wafer. In one embodiment a semiconductor processing chamber is provided having an opening which allows for insertion of a wafer. A wafer holder is located within the semiconductor processing chamber for receiving the wafer. An inlet port allows flow of gas into the semiconductor processing chamber. An outlet port allows flow of gas from the semiconductor processing chamber. A first heat plate is mounted within the semiconductor processing chamber so that a first face of a wafer, when held by the wafer holder, faces towards the first heat plate. A first heat source is located to heat the first heat plate. A second heat plate is mounted in position within the semiconductor processing chamber so that a second face of the wafer, opposing the first face, faces towards the second heat plate. A second heat source is located to heat the second heat plate.

Abstract: A dual surfaced mid-reflector employs two independently shaped faceted faces to direct radiant energy from separate heater lamp arrays to a substrate or substrate support to be heated. A dual surfaced mid-reflector can also be employed in conjunction with a peripheral cylindical reflect or and a central cylindrical reflector to further direct radiation to specific regions on a substrate or substrate support. In addition, a dual surfaced mid-reflector can also be employed in conjunction with heater lamps where the radiation of individual lamps is further directed by focusing reflectors or dispersive reflectors.

Abstract: A thermal reactor having a wafer chamber for containing at least one semiconductor wafer during processing. The thermal reactor contains a quartz window having an inward bow defining a concave outside surface.