Abstract: A reflector array employs a number of linear, tubular heater lamps arranged in a circle concentric with the substrate to be heated. Some of the lamps have focusing reflectors and the remainder have dispersive reflectors. A peripheral cylindrical reflector surrounds the lamps and their associated reflectors. The combined reflectors permit balancing the thermal radiation intensity across the surface of the substrate.

Abstract: A thermal reactor for epitaxial deposition on a wafer comprises a double-dome vessel and dual heat sources. Each heat source comprises inner and outer circular arrays of infrared lamps. Circumferential heating uniformity is assured by the cylindrical symmetry of the vessel and the heating sources. Radial heating uniformity is provided by independent control of inner and outer heating arrays for both the top and bottom heat sources. The relative temperatures of wafer and susceptor are controlled by adjusting relative energies provided by the upper and lower heat sources so that backside migration. Reduced pressure operation is provided for by the convex top and bottom domes. Due to the provided control over transmitted energy distribution, a susceptor can have low thermal mass so that elevated temperature can be achieved more quickly and cooling can be facilitated as well. This improves throughput and reduces manufacturing costs per wafer. Reagent gas introduction can be axial or radial as desired.

Abstract: A quartz window for a wafer reactor vessel has a flat bow for withstanding the pressure differential between the ambient outside pressure and the reduced pressure in the wafer chamber. The bow is enhanced at elevated operating temperatures to compensate for the flattening effect of higher pressure differentials. The enhanced bowing is provided by a rigid peripheral flange which radially confines the window. The thermal expansion within the window is not expressed radially, but is directed outward to increase the bow.

Abstract: An apparatus is described for processing semiconductor wafers for the construction of integrated circuit structures thereon wherein a semiconductor wafer is supported on the upper surface of a uniformly heated susceptor. The apparatus comprises a chamber, a circular susceptor in the chamber for supporting a semiconductor wafer thereon, heating means in the chamber beneath the susceptor, and support means for peripherally supporting the susceptor in the chamber comprising 3-6 spokes which are each connected at one end to a central hub which is coaxial with the axis of the circular susceptor, but spaced therefrom to permit even thermal distribution across the susceptor, and opposite ends of the spokes peripherally supporting the susceptor adjacent the end edges thereof, to permit uniform heating of the susceptor by the heating means and uniform thermal distribution of the heat through the susceptor.

Abstract: Oil and gas horizons in a wellbore are located by establishing from thermal logs thermal gradients for successive intervals free of drilling-induced thermal disturbances, identifying the mineral abundances surrounding the wellbore at each of said intervals, establishing ideal thermal conductivities for said mineral abundances based on assumptions that sand-rich formations have high thermal conductivities and are water-bearing and that shale-rich formations have low conductivities, determining an ideal heat flow at each interval by multiplying the thermal gradient at such interval by the ideal thermal conductivity of the mineral abundances at the interval, determining the average ideal heat flow for all of the intervals, and identifying the zones of the wellbore exhibiting anomalous ideal heat flows that are higher than the average heat flow.

Abstract: A thermal reactor system for semiconductor processing incorporates a reaction vessel with a rectangular quartz tube with reinforcing parallel quartz gussets. The gussets enable sub-ambient pressure processing, while the rectangular tube maximizes reactant gas flow uniformity over a wafer being processed. The gussets facilitate effective cooling, while minimally impairing heating of the wafer by allowing minimal wall thickness. The thermal reactor system further includes a gas source for supplying reactant gas and an exhaust handling system for removing spent gases from and establishing a reduced pressure within the reaction vessel. An array of infrared lamps is used to radiate energy through the quartz tube; the lamps are arranged in a staggered relation relative to the quartz gussets to minimize shadowing. In addition, other non-cylindrical gusseted vessel geometries are disclosed which provide for improved sub-ambient pressure thermal processing of semiconductor wafers.

Abstract: A method for monitoring in real time the growth of an hydraulic fracture in an earth formation traversed by a well borehole. Growth of the fracture is observed by measuring the temperature of the borehole fluid at selected times during the fracturing process. The temperature measurements are made by use of a string of vertically-spaced temperature sensors extending over the entire fracture depth interval, and a temperature-vs-depth profile of the fracture interval is generated in real time at the surface. Post-fracture temperature monitoring of the fracture zone affords information useful in estimating fracture volume and in well-flow planning and production scheduling.

Abstract: Disclosed are a method and a system for measuring the sea floor temperature gradient several meters into the formation at each of an array of measurement sites, and using these gradients to explore for and characterize hydrocarbon deposits. The measurements can be taken with a special lance driven into the otherwise undisturbed sea floor.

Abstract: A process of forming silicon epitaxial refilled pockets in a thick oxide layer, three to five micrometers thick, on a substrate. Pockets are selectively formed in the thick oxide layer by plasma etching. The pockets are filled using a silicon tetrachloride source.