Abstract: A device includes an elongated hollow member having an open distal end for receiving tissue therein and at least one exterior groove for loading at least one ligation band thereon. The device also includes a band deployment sleeve slidable over the exterior of the hollow member and configured to move from a radially expanded position to a radially contracted position in which, when the band deployment sleeve slides longitudinally over the hollow member, the distal portion engages the at least one ligation band. A closing sleeve slidable over the exterior of the band deployment sleeve is configured to constrain the distal portion from the radially expanded position into the radially contracted position. Retracting the closing sleeve proximally over the distal portion of the band deployment sleeve releases the distal portion from the radially contracted position into the radially expanded position.

Abstract: Technology described herein can be employed to automatically recommend a tiering policy for data storage of data at a data storage system, such as a cloud storage system. An example method can comprise determining, by a system comprising a processor, context information defining a data storage attribute applicable to data at a cloud storage system. The method can comprise, in response to determining the context information, generating, by the system, a tiering policy defining an element of tiering storage of data at the cloud storage system, wherein the tiering policy is based on the data storage attribute defined by the context information. The method also can comprise, in response to generating the tiering policy, outputting, by the system, the tiering policy to a storage device associated with a customer. The analysis can be performed using an artificial intelligence process, machine learning process or a combination thereof.

Abstract: A medical device includes opposing first and second end effectors coupled together to move from an open configuration to a closed configuration, a first link with a distal end pivotally connected to a proximal end of the first end effector, the first link including a first slot at a proximal end of the first link, a second link with a distal end pivotally connected to a proximal end of the second end effector, and a first actuator pin slidable within the first slot.

Abstract: A computer-implemented method is disclosed. The method includes: receiving input of product value data for a product item and a data modifier for the product value data, the data modifier identifying a target margin value associated with the product item; determining at least one current inventory location for the product item; obtaining a shipping rate associated with shipping the product item to a geographical region from the at least one current inventory location; retrieving historical transfer value preference data for the geographical region; modifying at least one of the product value data, the shipping rate, or the target margin value based on the historical transfer value preference data; determining a transfer value of the product item based on the modified at least one of the product value data, the shipping rate, or the target margin value; and generating an indication of the transfer value of the product item.

Abstract: A computer-implemented is disclosed. The method includes: receiving input of product value data for a product item and a data modifier for the product value data; determining a current inventory location for the product item; retrieving historical transfer value preference data for a geographical region; determining adjusted product values for the product item and adjusted shipping rates associated with shipping the product item to the geographical region based on the historical transfer value preference data; transmitting for display, on customer devices associated with the geographical region, different sets of product data for the product item; detecting transaction events for the product item based on input received via the customer devices; and outputting the product item and a target set of product data for the product item for the geographical region for display on a merchant device, the target set of product data selected based on the detected transaction events.

Abstract: A computer-implemented method is disclosed. The method includes: receiving input of product value data for a product item and a data modifier for the product value data, the data modifier identifying a target margin value associated with the product item; determining at least one current inventory location for the product item; obtaining a shipping rate associated with shipping the product item to a geographical region from the at least one current inventory location; retrieving historical transfer value preference data for the geographical region; modifying at least one of the product value data, the shipping rate, or the target margin value based on the historical transfer value preference data; determining a transfer value of the product item based on the modified at least one of the product value data, the shipping rate, or the target margin value; and generating an indication of the transfer value of the product item.

Abstract: Systems and methods for modifying features of a user interface of an online store in a manner based on a location of a customer are provided. The preferences for the features are identified for various geographical regions. The modification may be performed in real time, in the sense that the modification is not performed until a customer from a different region attempts to access the store. When this happens, the features of the online store are modified based on preferences or trends associated with a geographical region within which the customer is located, and a revised user interface is presented to the customer. The overall effect is that the store with the new revised user interface emulates stores created by merchants native to the customer's region.

Abstract: A nozzle for uniform plasma processing comprises an inlet portion and an outlet portion. The inlet portion has a side surface substantially parallel to a vertical axis. The inlet portion comprises a plurality of gas channels. The outlet portion is coupled to the inlet portion. The outlet portion comprises a plurality of outlets. At least one of the outlets is at an angle other than a right angle relative to the vertical axis.

Abstract: Embodiments of the present disclosure include methods and apparatuses utilized to reduce residual film layers from a substrate periphery region, such as an edge or bevel of the substrate. Contamination of the substrate bevel, backside and substrate periphery region may be reduced after a plasma process. In one embodiment, an edge ring includes a base circular ring having an inner surface defining a center opening formed thereon and an outer surface defining a perimeter of the base circular ring. The base circular ring includes an upper body and a lower portion connected to the upper body. A step is formed at the inner surface of the base circular ring and above a first upper surface of the upper body. The step defines a pocket above the first upper surface of the upper body. A plurality of raised features formed on the first upper surface of the base circular ring.

Abstract: In an embodiment, a method of processing a substrate includes introducing a first process gas or a mixture of the first process gas and a second process gas into an etch chamber; exposing the substrate to the first process gas or to the mixture of the first and second process gases, the substrate having halogen residue formed on an exposed surface, the substrate having high aspect ratio features; forming and maintaining a plasma of the first process gas or a plasma of the mixture of the first and second process gases in the etch chamber to remove the residue from the surface by applying a first source power; exposing the substrate to the second process gas; and forming and maintaining a plasma of the second process gas in the etch chamber to remove the residue from the surface by applying a second source power and a bias power.

Abstract: A nozzle for uniform plasma processing comprises an inlet portion and an outlet portion. The inlet portion has a side surface substantially parallel to a vertical axis. The inlet portion comprises a plurality of gas channels. The outlet portion is coupled to the inlet portion. The outlet portion comprises a plurality of outlets. At least one of the outlets is at an angle other than a right angle relative to the vertical axis.

Abstract: A nozzle for uniform plasma processing comprises an inlet portion and an outlet portion. The inlet portion has a side surface substantially parallel to a vertical axis. The inlet portion comprises a plurality of gas channels. The outlet portion is coupled to the inlet portion. The outlet portion comprises a plurality of outlets. At least one of the outlets is at an angle other than a right angle relative to the vertical axis.

Abstract: In an embodiment, a method of processing a substrate includes introducing a first process gas or a mixture of the first process gas and a second process gas into an etch chamber; exposing the substrate to the first process gas or to the mixture of the first and second process gases, the substrate having halogen residue formed on an exposed surface, the substrate having high aspect ratio features; forming and maintaining a plasma of the first process gas or a plasma of the mixture of the first and second process gases in the etch chamber to remove the residue from the surface by applying a first source power; exposing the substrate to the second process gas; and forming and maintaining a plasma of the second process gas in the etch chamber to remove the residue from the surface by applying a second source power and a bias power

Abstract: Embodiments of the present disclosure include methods and apparatuses utilized to reduce residual film layers from a substrate periphery region, such as an edge or bevel of the substrate. Contamination of the substrate bevel, backside and substrate periphery region may be reduced after a plasma process. In one embodiment, an edge ring includes a base circular ring having an inner surface defining a center opening formed thereon and an outer surface defining a perimeter of the base circular ring. The base circular ring includes an upper body and a lower portion connected to the upper body. A step is formed at the inner surface of the base circular ring and above a first upper surface of the upper body. The step defines a pocket above the first upper surface of the upper body. A plurality of raised features formed on the first upper surface of the base circular ring.

Abstract: A nozzle for uniform plasma processing comprises an inlet portion and an outlet portion. The inlet portion has a side surface substantially parallel to a vertical axis. The inlet portion comprises a plurality of gas channels. The outlet portion is coupled to the inlet portion. The outlet portion comprises a plurality of outlets. At least one of the outlets is at an angle other than a right angle relative to the vertical axis.

Abstract: Embodiments described herein generally relate to a substrate processing system and related methods, such as an etching/deposition method. The method comprises (A) depositing a protective layer on a first layer disposed on a substrate in an etch reactor, wherein a plasma source power of 4,500 Watts or greater is applied while depositing the protective layer, (B) etching the protective layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the protective layer, and (C) etching the first layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the first layer, wherein a time for the depositing a protective layer (A) comprises less than 30% of a total cycle time for the depositing a protective layer (A), the etching the protective layer (B), and the etching the first layer (C).

Abstract: In some embodiments, a method for etching features into a substrate may include exposing a substrate having a photoresist layer disposed atop the substrate to a first process gas to form a polymer containing layer atop sidewalls and a bottom of a feature formed in the photoresist layer, wherein the first process gas is selectively provided to a first area of the substrate via a first set of gas nozzles disposed within a process chamber and; exposing the substrate to a second process gas having substantially no oxygen to etch the feature into the substrate, wherein the second process gas is selectively provided to a second area of the substrate via a second set of gas nozzles disposed in the process chamber.

Abstract: The present disclosure provides methods for via reveal etching process to form through-silicon vias (TSVs) in a substrate. In one embodiment, a method for performing a via reveal process to form through-silicon vias in a substrate includes providing a substrate having partial through-silicon vias formed from a first surface of the substrate into a processing chamber, wherein the partial through-silicon vias formed in the substrate are blind vias, supplying an etching gas mixture including at least a fluorine containing gas and a chlorine containing gas into the processing chamber, and preferentially removing a portion of the substrate from a second surface of the substrate to expose the through-silicon vias until a desired length of the through-silicon vias is exposed from the second surface of the substrate.

Abstract: Methods for fabricating dual damascene interconnect structures are provided herein. In some embodiments, a method for fabricating a dual damascene interconnect structure may include etching a via into a substrate through a first photoresist layer; patterning a second photoresist layer atop the substrate to define a trench pattern, wherein the via is aligned within the trench pattern, and wherein a portion of undeveloped photoresist remains in the via after patterning; and etching the trench into the substrate to form a dual damascene pattern in the substrate.

Abstract: Embodiments described herein generally relate to a substrate processing system and related methods, such as an etching/deposition method. The method comprises (A) depositing a protective layer on a first layer disposed on a substrate in an etch reactor, wherein a plasma source power of 4,500 Watts or greater is applied while depositing the protective layer, (B) etching the protective layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the protective layer, and (C) etching the first layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the first layer, wherein a time for the depositing a protective layer (A) comprises less than 30% of a total cycle time for the depositing a protective layer (A), the etching the protective layer (B), and the etching the first layer (C).