Abstract: Disclosed are methods of advanced process control (APC) for particular processes. A particular process (e.g., a photolithography or etch process) is performed on a wafer to create a pattern of features. A parameter is measured on a target feature and the value of the parameter is used for APC. However, instead of performing APC based directly on the actual parameter value, APC is performed based on an adjusted parameter value. Specifically, an offset amount (which is previously determined based on an average of a distribution of parameter values across all of the features) is applied to the actual parameter value to acquire an adjusted parameter value, which better represents the majority of features in the pattern. Performing this APC method minimizes dimension variations from pattern to pattern each time the same pattern is generated on another region of the same wafer or on a different wafer using the particular process.

Abstract: Disclosed are methods of advanced process control (APC) for particular processes. A particular process (e.g., a photolithography or etch process) is performed on a wafer to create a pattern of features. A parameter is measured on a target feature and the value of the parameter is used for APC. However, instead of performing APC based directly on the actual parameter value, APC is performed based on an adjusted parameter value. Specifically, an offset amount (which is previously determined based on an average of a distribution of parameter values across all of the features) is applied to the actual parameter value to acquire an adjusted parameter value, which better represents the majority of features in the pattern. Performing this APC method minimizes dimension variations from pattern to pattern each time the same pattern is generated on another region of the same wafer or on a different wafer using the particular process.

Abstract: In an immersion lithography tool, the status of the immersion hood surface may be estimated on the basis of an inline detection system that generates optical measurement data. For example, a digital imaging system may be implemented in order to obtain optical measurement data without requiring exposure of the interior of the lithography tool to ambient air. In other cases, other optical measurement techniques, such as FTIR and the like, may be applied.

Abstract: Variations in critical dimensions of circuit features of sophisticated semiconductor devices may be reduced by efficiently extracting mask and/or imaging tool specific non-uniformities with high spatial resolution by using measured intensity values and simulated intensity values. For example, a tool internal radiation sensor may be used for measuring the intensity of an image of a lithography mask, while a simulated intensity enables eliminating the mask pattern specific intensity contributions. In this manner, high spatial resolution of the corresponding correction map may be obtained without undue effort in terms of man power and measurement tool resources.

Abstract: Metrology data associated with a plurality of workpieces processed at a selected operation in the process flow including a plurality of operations is retrieved. A processing context associated with each of the workpieces is determined. The processing context identifies at least one previous tool used to perform an operation on the associated workpiece prior to the selected operation. A plurality of performance metrics is determined for a plurality of tools capable of performing the selected operation based on the metrology data. Each performance metric is associated with a particular tool and a particular processing context. A set of the performance metrics is identified for the plurality of tools having a processing context matching a processing context of a selected workpiece awaiting performance of the selected operation. The selected workpiece is dispatched for processing in a selected one of the plurality of tools based on the set of performance metrics.

Abstract: Variations in critical dimensions of circuit features of sophisticated semiconductor devices may be reduced by efficiently extracting mask and/or imaging tool specific non-uniformities with high spatial resolution by using measured intensity values and simulated intensity values. For example, a tool internal radiation sensor may be used for measuring the intensity of an image of a lithography mask, while a simulated intensity enables eliminating the mask pattern specific intensity contributions. In this manner, high spatial resolution of the corresponding correction map may be obtained without undue effort in terms of man power and measurement tool resources.

Abstract: By taking into consideration the combination of the substrate holders in various lithography tools used during the imaging to two subsequent device layers, enhanced alignment accuracy may be accomplished. Furthermore, restrictive tool dedications for critical lithography processes may be significantly relaxed by providing specific overlay correction data for each possible process flow, wherein, in some illustrative embodiments, a restriction of the number of possible process flows may be accomplished by implementing a rule for selecting a predefined substrate holder when starting the processing of an associated group of substrates.

Abstract: By taking into consideration tool-specific distortion signatures and reticle-specific placement characteristics in an alignment control system, the control quality of sophisticated APC strategies may be significantly enhanced. Respective correction data may be established on the basis of any combinations of tool/reticles and layers to be aligned to each other, which may modify the respective target values of alignment parameters used for controlling the alignment process on the basis of standard overlay measurement data obtained from dedicated overlay marks.

Abstract: In an immersion lithography tool, the status of the immersion hood surface may be estimated on the basis of an inline detection system that generates optical measurement data. For example, a digital imaging system may be implemented in order to obtain optical measurement data without requiring exposure of the interior of the lithography tool to ambient air. In other cases, other optical measurement techniques, such as FTIR and the like, may be applied.

Abstract: Metrology data associated with a plurality of workpieces processed at a selected operation in the process flow including a plurality of operations is retrieved. A processing context associated with each of the workpieces is determined. The processing context identifies at least one previous tool used to perform an operation on the associated workpiece prior to the selected operation. A plurality of performance metrics is determined for a plurality of tools capable of performing the selected operation based on the metrology data. Each performance metric is associated with a particular tool and a particular processing context. A set of the performance metrics is identified for the plurality of tools having a processing context matching a processing context of a selected workpiece awaiting performance of the selected operation. The selected workpiece is dispatched for processing in a selected one of the plurality of tools based on the set of performance metrics.

Abstract: Aberration control capabilities of sophisticated lithography tools may be exploited in order to locally adapt the focal surface of the optical system. That is, higher order correction terms may be incorporated in the design of the local surface in addition to the conventionally used first order corrections, thereby enhancing uniformity of the lithography process and thus of corresponding microstructure devices.

Abstract: By taking into consideration the combination of the substrate holders in various lithography tools used during the imaging to two subsequent device layers, enhanced alignment accuracy may be accomplished. Furthermore, restrictive tool dedications for critical lithography processes may be significantly relaxed by providing specific overlay correction data for each possible process flow, wherein, in some illustrative embodiments, a restriction of the number of possible process flows may be accomplished by implementing a rule for selecting a predefined substrate holder when starting the processing of an associated group of substrates.

Abstract: By automatically estimating the focus status of individual substrates or lots on the basis of focus-specific tool information obtained from the exposure tool, such as tilt angle ranges used during the automatic focusing procedures, possible hot spot errors may be detected highly efficiently prior to releasing the substrates to a subsequent etch process. Consequently, yield losses may be reduced. Moreover, possible error sources for hot spot errors may be identified.

Abstract: By taking into consideration tool-specific distortion signatures and reticle-specific placement characteristics in an alignment control system, the control quality of sophisticated APC strategies may be significantly enhanced. Respective correction data may be established on the basis of any combinations of tool/reticles and layers to be aligned to each other, which may modify the respective target values of alignment parameters used for controlling the alignment process on the basis of standard overlay measurement data obtained from dedicated overlay marks.

Abstract: The electrical performance of sub-devices is detected and the corresponding measurement data is used to control a lithography process so as to compensate for any type of process variations during a manufacturing sequence.

Abstract: By automatically estimating the focus status of individual substrates or lots on the basis of focus-specific tool information obtained from the exposure tool, such as tilt angle ranges used during the automatic focusing procedures, possible hot spot errors may be detected highly efficiently prior to releasing the substrates to a subsequent etch process. Consequently, yield losses may be reduced. Moreover, possible error sources for hot spot errors may be identified.

Abstract: An advanced control system for a photolithography tool that receives measurement data relating to inline parameters varying with position on a substrate surface. The position sensitive measurement data is used to establish a position dependent target offset for an exposure map, thereby effectively compensating for substrate non-uniformities. Since the inline measurement data is available significantly earlier in comparison to electrical measurement data of a completed circuit element, a more accurate exposure map may be obtained taking into account the process history of the substrates.

Abstract: A technique is disclosed that allows alignment of substrates on a run-to-run basis by using the position data of one or more previously aligned substrates to determine a setpoint of a pre-alignment process for one or more subsequent substrates. The setpoint may also be determined on the basis of a predefined characteristic of the substrates to be aligned.

Abstract: The electrical performance of sub-devices is detected and the corresponding measurement data is used to control a lithography process so as to compensate for any type of process variations during a manufacturing sequence.

Abstract: An advanced control system for a photolithography tool that receives measurement data relating to inline parameters varying with position on a substrate surface. The position sensitive measurement data is used to establish a position dependent target offset for an exposure map, thereby effectively compensating for substrate non-uniformities. Since the inline measurement data is available significantly earlier in comparison to electrical measurement data of a completed circuit element, a more accurate exposure map may be obtained taking into account the process history of the substrates.