Abstract: A binary bi-phase shift modulator having an input piezoelectric transducer and an output piezoelectric transducer connected in series between a radio frequency input and a radio frequency output. A fixed DC pole voltage having a first polarity is connected to one of the transducers. A DC switched pole voltage is connected to the other transducer which switches between the pole voltage of the first polarity arid a pole voltage of the opposite polarity m accordance with a dinar data signal The polarity of the radio frequency input relative to the radio frequency output varies as a function of the polarity of the DC switched pole voltage.

Abstract: A micro-explosive material is provided. The micro-explosive material can include a carbon nanotube and a solid oxidizer attached to the carbon nanotube. The carbon nanotube with the solid oxidizer attached thereto is operable to burn per an exothermic chemical reaction between the carbon nanotube and the solid oxidizer such that a controlled burn and/or an explosive burn is provided. The micro-explosive material can be used as a heat generator, a gas generator, a micro-thruster, a primer for use with a larger explosive material, and the like.

Abstract: An electrostatic ohmic shunt radio frequency (RF) microelectromechanical system (MEMS) switch and method of manufacturing includes a co-planar waveguide (CPW) transmission line comprising a plurality of slots and a plurality of pillars, wherein a space between successive ones of the plurality of pillars is defined by one of the plurality of slots; a plurality of electrodes positioned in the slots; a conductive contact beam elevated over the CPW transmission line and the plurality of electrodes; and a plurality of conductive contact dimples positioned between the conductive contact beam and the CPW transmission line, wherein the plurality of pillars are adapted to prevent physical contact between the plurality of electrodes and the conductive contact beam.

Abstract: Silicon-based explosive devices and methods of manufacture are provided. In this regard, a representative method involves: providing a doped silicon substrate; depositing undoped silicon on a first side of the substrate; and infusing an oxidizer into an area bounded at least in part by the undoped silicon; wherein the undoped silicon limits an exothermic reaction of the doped silicon to the bounded area. Another representative method involves: providing a doped silicon substrate; depositing a masking layer of low-pressure chemical vapor deposited (LPCVD) Silicon nitride to the first side of the substrate; patterning the nitride mask and etching the porous silicon, and infusing oxidizer into an area bounded by the LPCVD nitride; wherein the silicon nitride limits an exothermic reaction of the doped silicon to the bounded area.

Abstract: A method for forming an electrical device having a {100}-textured platinum electrode comprising: depositing a textured metal thin film onto a substrate; thermally oxidizing the metal thin film by annealing to convert it to a rocksalt structure oxide with a {100}-texture; depositing a platinum film layer; depositing a ferroelectric film. An electrical device comprising a substrate; a textured layer formed on the substrate comprising metal oxide having a rocksalt structure; a first electrode film layer having a crystallographic texture acting as a template; and at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the first electrode film layer whereby the rocksalt structure of the textured layer facilitates the growth of the first electrode film layer with a {100} orientation which forms a template for the epitaxial deposition of the ferroelectric layer such that the ferroelectric layer is formed with an {001} orientation.

Abstract: A ferroelectric device comprising a substrate; a textured layer; a first electrode comprising a thin layer of metallic material having a crystal lattice structure divided into granular regions; a seed layer; the seed layer being epitaxially deposited so as to form a column-like structure on top of the granular regions of the first electrode; at least one ferroelectric material layer exhibiting spontaneous polarization epitaxially deposited on the seed layer; the ferroelectric material layer, the seed layer, and first electrode each having granular regions in which column-like structures produce a high degree of polarization normal to the growth plane and a method of making.

Abstract: A voltage controlled oscillator comprising a substrate and a bilayer graphene transistor formed on the substrate. The transistor has two signal terminals and a gate terminal positioned in between the signal terminals. A voltage controlled PZT or MEMS capacitor is also formed on the substrate. The capacitor is electrically connected to the transistor gate terminal. At least one component is connected to the transistor and capacitor to form a resonant circuit.

Abstract: An electrostatic ohmic shunt radio frequency (RF) microeleetromechanical system (MEMS) switch and method of manufacturing includes a co-planar waveguide (CPW) transmission line comprising a plurality of slots and a plurality of pillars, wherein a space between successive ones of the plurality of pillars is defined by one of the plurality of slots; a plurality of electrodes positioned in the slots; a conductive contact beam elevated over the CPW transmission line and the plurality of electrodes; and a plurality of conductive contact dimples positioned between the conductive contact beam and the CPW transmission line, wherein the plurality of pillars are adapted to prevent physical contact between the plurality of electrodes and the conductive contact beam.

Abstract: Silicon-based explosive devices and methods of manufacture are provided. In this regard, a representative method involves: providing a doped silicon substrate; depositing undoped silicon on a first side of the substrate; and infusing an oxidizer into an area bounded at least in part by the undoped silicon; wherein the undoped silicon limits an exothermic reaction of the doped silicon to the bounded area. Another representative method involves: providing a doped silicon substrate; depositing a masking layer of low-pressure chemical vapor deposited (LPCVD) Silicon nitride to the first side of the substrate; patterning the nitride mask and etching the porous silicon, and infusing oxidizer into an area bounded by the LPCVD nitride; wherein the silicon nitride limits an exothermic reaction of the doped silicon to the bounded area.

Abstract: Co-fabricating of vertical piezoelectric MEMS actuators that achieve large positive and negative displacements through operating electric fields in excess of the coercive field includes forming a large negative displacement vertical piezoelectric MEMS actuator, forming a bottom structural dielectric layer above a substrate layer; forming a bottom electrode layer above the structural dielectric layer; forming an active piezoelectric layer above the bottom electrode layer; forming a top electrode layer above the active piezoelectric layer; forming a top structural layer above the top electrode layer, wherein the x-y neutral plane of the negative displacement vertical piezoelectric MEMS actuator is above the mid-plane of the active piezoelectric layer, wherein the negative displacement vertical piezoelectric MEMS actuator is partially released from the substrate to allow free motion of the actuator; and combining the large negative displacement vertical piezoelectric MEMS actuator and a large positive displaceme

Abstract: A piezoelectric microelectromechanical systems (MEMS) actuator includes a silicon substrate; an actuator beam comprising a first end region connected to the silicon substrate and a second end region connected to a mechanically compliant spring assembly; a first electrode over the silicon substrate; a piezoelectric layer above the first electrode; a second electrode over the piezoelectric layer; a conductive top structural layer above the second electrode, wherein a center half of the actuator beam is configured as a positive deflection region, and wherein both the first electrode and the second electrode supply voltage to both positive and negative deflection regions of the actuator beam.

Abstract: Co-fabricating of vertical piezoelectric MEMS actuators that achieve large positive and negative displacements through operating electric fields in excess of the coercive field includes forming a large negative displacement vertical piezoelectric MEMS actuator, forming a bottom structural dielectric layer above a substrate layer; forming a bottom electrode layer above the structural dielectric layer; forming an active piezoelectric layer above the bottom electrode layer; forming a top electrode layer above the active piezoelectric layer; forming a top structural layer above the top electrode layer, wherein the x-y neutral plane of the negative displacement vertical piezoelectric MEMS actuator is above the mid-plane of the active piezoelectric layer, wherein the negative displacement vertical piezoelectric MEMS actuator is partially released from the substrate to allow free motion of the actuator; and combining the large negative displacement vertical piezoelectric MEMS actuator and a large positive displaceme

Abstract: A piezoelectric microelectromechanical systems (MEMS) actuator includes a silicon substrate; an actuator beam comprising a first end region connected to the silicon substrate and a second end region connected to a mechanically compliant spring assembly; a first electrode over the silicon substrate; a piezoelectric layer above the first electrode; a second electrode over the piezoelectric layer; a conductive top structural layer above the second electrode, wherein a center half of the actuator beam is configured as a positive deflection region, and wherein both the first electrode and the second electrode supply voltage to both positive and negative deflection regions of the actuator beam.

Abstract: A microelectromechanical system (MEMS) switch comprising a radio frequency (RF) transmission line; a structurally discontinuous RF conductor adjacent to the RF transmission line; a pair of cantilevered piezoelectric actuators flanking the RF conductor; a contact pad connected to the pair of cantilevered piezoelectric actuators; a pair of cantilevered structures connected to the RF conductor; a plurality of air bridges connected to the pair of cantilevered piezoelectric actuators; and a plurality of contact dimples on the contact pad. Preferably, the RF transmission line comprises a pair of co-planar waveguide ground planes flanking the RF conductor; and a plurality of ground straps connected to the pair of co-planar waveguide ground planes, wherein the RF transmission line is operable to provide a path along which RF signals propagate.

Abstract: A MEMS switch and method of fabrication comprises a RF transmission line; a RF beam structure comprising a RF conductor; a cantilevered piezoelectric actuator coupled to the RF beam structure; a plurality of air bridges connected to the cantilevered piezoelectric actuator; and a plurality of contact dimples on the pair on the RF beam structure. The RF transmission line comprises a pair of co-planar waveguide ground planes flanking the RF conductor; and a plurality of ground straps, wherein the RF transmission line is operable to provide a path along which RF signals propagate. The cantilevered piezoelectric actuator comprises a dielectric layer connected to the RF beam structure; a bottom electrode connected to the dielectric layer; a top electrode; and a piezoelectric layer in between the top and bottom electrodes, wherein the top electrode is offset from an edge of the piezoelectric layer and the bottom electrode.

Abstract: An integrated photoacoustic spectroscopy (PAS) cell is fabricated using microelectromechanical (MEMS) techniques. The multi-layer structure includes an inner layer with a patterned resonant cavity disposed between top and bottom outer layers and a microphone acoustically coupled to the resonant cavity. In the preferred embodiment, the microphone is a piezoelectric thin-film membrane formed on one of the outer layers. The inner layer is additionally patterned to include buffer cavities on either side of the resonant cavity, and one or both of the top and bottom outer layers are also patterned to include buffer cavities aligned with the buffer cavities in the inner layer on either side of the resonant cavity. The preferred fabrication method involves joining an inner silicon substrate to a pair of outer silicon substrates, thereby encapsulating the resonant cavity, and depositing a piezoelectric thin film onto one of the outer substrates which is then patterned to create an acoustic sensor.