Abstract: Provided in the embodiments of the present application are a wireless communication method and device. For NSTR characteristics of a mobile AP MLD, it is designed that uplink simultaneous transmission between a plurality of independent non-access-point devices is triggered in a mobile AP MLD scenario. By means of the embodiments of the present application, an uplink access restriction is relaxed, and under the condition of not affecting the transmission quality of a single-link device on a main link, the success rate of uplink simultaneous transmission between mobile AP MLDs is increased, and a transmission service having a high throughput is also provided.

Abstract: The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different resistance area as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge array is non-zero.

Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes four or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first, second, third, and fourth TMR resistors are disposed in the same plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to the magnetization of a free layer, but opposite to the magnetization direction of the reference layer of the first TMR film.

Abstract: A sensor for sensing stress in a ferromagnetic material includes a non-magnetic substrate. The substrate has a first surface and a second surface opposite the first surface. A first coil is attached to or formed on the first surface of the substrate. The first coil is configured to induce a magnetic flux in the ferromagnetic material being driven by an alternating current (AC) signal. At least one second coil is attached to or formed on the first surface of the substrate. The at least one second coil is spaced from the first coil. In addition, the second coil is configured to detect changes in the magnetic flux induced in the ferromagnetic material.

Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR sensors. The TMR sensor device comprises a first resistor comprising a first TMR film, a second resistor comprising a second TMR film different than the first TMR film, a third resistor comprising the second TMR film, and a fourth resistor comprising the first TMR film. The first TMR film comprises a reference layer having a first magnetization direction anti-parallel to a second magnetization direction of a pinned layer. The second TMR film comprises a reference layer having a first magnetization direction parallel to a second magnetization direction of a first pinned layer, and a second pinned layer having a third magnetization direction anti-parallel to the first magnetization direction of the reference layer and the second magnetization direction of the first pinned layer.

Abstract: An apparatus comprising an onboard energy storage device, an onboard power conversion device configured to be electrically coupled to an external power source for receiving electrical power therefrom, and at least one drive system electrically coupled to the onboard energy storage device and the onboard power conversion device, wherein the onboard energy storage device and the onboard power conversion device cooperatively provide electrical power for the at least one drive system. A vehicle and a method for managing power supply are also disclosed.

Abstract: A Wheatstone bridge array comprising a tunneling magnetoresistive (TMR) sensor and a method for manufacturing is disclosed. The bottom lead for the TMR sensor has a very small surface roughness due to not only chemical mechanical planarization (CMP) but also due to forming the bottom lead from multiple layers. The multiple layers include at least a bottom first metal layer and a top second metal layer disposed on the first metal layer. The second metal layer generally has a lower surface roughness than the first metal layer. Additionally, the second metal layer has a slower polishing rate. Therefore, not only does the second metal layer reduce the surface roughness simply be being present, but the slower polishing rate enables the top second metal film to be polished to a very fine surface roughness of less than or equal to ˜2 Angstroms.

Abstract: A flutter control system for a turbine includes a processor. The processor is configured to detect blade flutter of a turbine. The blade flutter indicates that blades of the turbine are in a deflected position different from a nominal operating position. The processor is configured to control operational parameters of the turbine that reduce or eliminate the blade flutter to improve the reliability and efficiency of the turbine.

Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes four or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first, second, third, and fourth TMR resistors are disposed in the same plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of the reference layer orthogonal to the magnetization of a free layer, but opposite to the magnetization direction of the reference layer of the first TMR film.

Abstract: The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR structures. Two resistors have identical TMR structures. The remaining two resistors also have identical TMR structures, though the TMR structures are different from the other two resistors. Additionally, the two resistors that have identical TMR structures have a different resistance area as compared to the remaining two resistors that have identical TMR structures. Therefore, the working bias field for the Wheatstone bridge array is non-zero.

Abstract: A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR sensors. The TMR sensor device comprises a first resistor comprising a first TMR film, a second resistor comprising a second TMR film different than the first TMR film, a third resistor comprising the second TMR film, and a fourth resistor comprising the first TMR film. The first TMR film comprises a reference layer having a first magnetization direction anti-parallel to a second magnetization direction of a pinned layer. The second TMR film comprises a reference layer having a first magnetization direction parallel to a second magnetization direction of a first pinned layer, and a second pinned layer having a third magnetization direction anti-parallel to the first magnetization direction of the reference layer and the second magnetization direction of the first pinned layer.

Abstract: A Wheatstone bridge array comprising a tunneling magnetoresistive (TMR) sensor and a method for manufacturing is disclosed. The bottom lead for the TMR sensor has a very small surface roughness due to not only chemical mechanical planarization (CMP) but also due to forming the bottom lead from multiple layers. The multiple layers include at least a bottom first metal layer and a top second metal layer disposed on the first metal layer. The second metal layer generally has a lower surface roughness than the first metal layer. Additionally, the second metal layer has a slower polishing rate. Therefore, not only does the second metal layer reduce the surface roughness simply be being present, but the slower polishing rate enables the top second metal film to be polished to a very fine surface roughness of less than or equal to ˜2 Angstroms.

Abstract: A calibration apparatus is configured to calibrate a magnetostrictive sensor. The magnetostrictive sensor is configured to measure an object and comprises a sensing element positioned adjacent to the object. The calibration apparatus comprises an estimation device and a calibrator. The estimation device is configured to estimate at least one of a gap between the sensing element and the object and a temperature of the object to obtain at least one of an estimated gap and an estimated temperature, based on geometric information, an excitation signal and an output signal of the magnetostrictive sensor, and geometric information of the object. The calibrator is configured to reduce an effect on the output signal of the magnetostrictive sensor imposed by variations in the at least one of the gap and the temperature, based on the at least one of the estimated gap and the estimated temperature, to obtain a calibrated output signal.

Abstract: A sensor for sensing stress in a ferromagnetic material includes a non-magnetic substrate. The substrate has a first surface and a second surface opposite the first surface. A first coil is attached to or formed on the first surface of the substrate. The first coil is configured to induce a magnetic flux in the ferromagnetic material being driven by an alternating current (AC) signal. At least one second coil is attached to or formed on the first surface of the substrate. The at least one second coil is spaced from the first coil. In addition, the second coil is configured to detect changes in the magnetic flux induced in the ferromagnetic material.

Abstract: An apparatus comprising an onboard energy storage device, an onboard power conversion device configured to be electrically coupled to an external power source for receiving electrical power therefrom, and at least one drive system electrically coupled to the onboard energy storage device and the onboard power conversion device, wherein the onboard energy storage device and the onboard power conversion device cooperatively provide electrical power for the at least one drive system. A vehicle and a method for managing power supply are also disclosed.

Abstract: An apparatus comprising an onboard energy storage device, an onboard power conversion device configured to be electrically coupled to an external power source for receiving electrical power therefrom, and at least one drive system electrically coupled to the onboard energy storage device and the onboard power conversion device, wherein the onboard energy storage device and the onboard power conversion device cooperatively provide electrical power for the at least one drive system. A vehicle and a method for managing power supply are also disclosed.

Abstract: A sensor for sensing stress in a ferromagnetic material includes a non-magnetic substrate. The substrate has a first surface and a second surface opposite the first surface. A first coil is attached to or formed on the first surface of the substrate. The first coil is configured to induce a magnetic flux in the ferromagnetic material being driven by an alternating current (AC) signal. At least one second coil is attached to or formed on the first surface of the substrate. The at least one second coil is spaced from the first coil. In addition, the second coil is configured to detect changes in the magnetic flux induced in the ferromagnetic material.

Abstract: A flutter control system for a turbine includes a processor. The processor is configured to detect blade flutter of a turbine. The blade flutter indicates that blades of the turbine are in a deflected position different from a nominal operating position. The processor is configured to control operational parameters of the turbine that reduce or eliminate the blade flutter to improve the reliability and efficiency of the turbine.

Abstract: A calibration apparatus is configured to calibrate a magnetostrictive sensor. The magnetostrictive sensor is configured to measure an object and comprises a sensing element positioned adjacent to the object. The calibration apparatus comprises an estimation device and a calibrator. The estimation device is configured to estimate at least one of a gap between the sensing element and the object and a temperature of the object to obtain at least one of an estimated gap and an estimated temperature, based on geometric information, an excitation signal and an output signal of the magnetostrictive sensor, and geometric information of the object. The calibrator is configured to reduce an effect on the output signal of the magnetostrictive sensor imposed by variations in the at least one of the gap and the temperature, based on the at least one of the estimated gap and the estimated temperature, to obtain a calibrated output signal.

Abstract: A sensor for sensing stress in a ferromagnetic material includes a non-magnetic substrate. The substrate has a first surface and a second surface opposite the first surface. A first coil is attached to or formed on the first surface of the substrate. The first coil is configured to induce a magnetic flux in the ferromagnetic material being driven by an alternating current (AC) signal. At least one second coil is attached to or formed on the first surface of the substrate. The at least one second coil is spaced from the first coil. In addition, the second coil is configured to detect changes in the magnetic flux induced in the ferromagnetic material.